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    DIODE AR S1 39 Search Results

    DIODE AR S1 39 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE AR S1 39 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Le57D11

    Abstract: Legerity SLAC L11A050AA jr223 RTX22 AM79Q021 diode AR s1 55 CD11 CD12 CD22
    Text: Le57D11 Dual SLIC Device Evaluation Board User’s Guide Rev. A January 30, 2002 Document Number: 080748 The contents of this document are provided in connection with Legerity, Inc. products. Legerity makes no representations or warranties with respect to the accuracy or completeness of the


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    PDF Le57D11 Legerity SLAC L11A050AA jr223 RTX22 AM79Q021 diode AR s1 55 CD11 CD12 CD22

    AO4627

    Abstract: No abstract text available
    Text: AO4627 30V Complementary MOSFET General Description Product Summary The AO4627 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.


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    PDF AO4627 AO4627 unless4627

    Untitled

    Abstract: No abstract text available
    Text: AO4627 30V Complementary MOSFET General Description Product Summary The AO4627 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.


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    PDF AO4627 AO4627 100m1 165m1 otherwi4627

    AO4805

    Abstract: 70°C
    Text: AO4805 30V Dual P-Channel MOSFET General Description Product Summary The AO4805 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.


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    PDF AO4805 AO4805 70°C

    diode AR s1 39

    Abstract: No abstract text available
    Text: AON6850 100V Dual N-Channel MOSFET SDMOS TM General Description Product Summary The AON6850 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal


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    PDF AON6850 AON6850 diode AR s1 39

    AON6850

    Abstract: diode AR s1 56 diode AR s1 39
    Text: AON6850 100V Dual N-Channel MOSFET SDMOS TM General Description Product Summary The AON6850 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal


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    PDF AON6850 AON6850 diode AR s1 56 diode AR s1 39

    AON6970

    Abstract: No abstract text available
    Text: AON6970 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Q1


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    PDF AON6970 AON6970

    Untitled

    Abstract: No abstract text available
    Text: AOD608 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD608 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other


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    PDF AOD608 O-252-4L

    Untitled

    Abstract: No abstract text available
    Text: ZXM HC3A01T8 COM PLEM ENTARY 30V ENHANCEM ENT M ODE M OSFET H-BRIDGE SUM M ARY N-Channel = V BR DSS= 30V : RDS(on)= 0.12 ; ID= 3.1A P-Channel = V (BR)DSS= -30V : RDS(on)= 0.21 ; ID= -2.3A DESCRIPTION This new generation of trench M OSFETs from Zetex utilizes a unique structure that com bines the benefits of


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    PDF HC3A01T8

    Diode SMD ED 9a

    Abstract: IRF7504 diode AR s1 52 smd rectifier diode code S1 16 soic smd pcb footprint
    Text: Previous Datasheet Index Next Data Sheet PRELIMINARY PD - 9.1267D IRF7504 HEXFET Power MOSFET Generation V Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l Low Profile <1.1mm l Available in Tape & Reel l Fast Switching


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    PDF 1267D IRF7504 IA-481 Diode SMD ED 9a IRF7504 diode AR s1 52 smd rectifier diode code S1 16 soic smd pcb footprint

    RSN 310 r 36

    Abstract: AM79489 100U GR-1089-CORE JR10 relay JR2 AMD slac White LED pspice model am79489a
    Text: Am79489 SLIC Evaluation Board User’s Guide 1999 The contents of this document are provided in connection with Advanced Micro Devices, Inc. “AMD” products. AMD makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves


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    PDF Am79489 1N4003 220nF 2200pF RSN 310 r 36 100U GR-1089-CORE JR10 relay JR2 AMD slac White LED pspice model am79489a

    AOD608

    Abstract: TRANSISTOR JC
    Text: AOD608 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD608 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other


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    PDF AOD608 AOD608 O-252-4L SyAOD608 TRANSISTOR JC

    EE 19B transformer

    Abstract: IRF7509 Dual N P-Channel irf MOSFET p-CH
    Text: PD - 9.1270H IRF7509 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Package l Low Profile <1.1mm l Available in Tape & Reel l Fast Switching Description l l S1 G1 S2 G2 P -C H A N NE L M O S F E T


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    PDF 1270H IRF7509 EE 19B transformer IRF7509 Dual N P-Channel irf MOSFET p-CH

    100U

    Abstract: AM7946 GR-1089-CORE JS11 JS12 AMD slac
    Text: Am7946 SLIC Evaluation Board User’s Guide 1999 The contents of this document are provided in connection with Advanced Micro Devices, Inc. “AMD” products. AMD makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves


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    PDF Am7946 SLC08E-0011 16-PIN 2N3906 7946PLCC 100U GR-1089-CORE JS11 JS12 AMD slac

    AM79R79

    Abstract: 2N3906 555 timer SPICE model 100U 74C04 GR-1089-CORE TISP61089AD TLC555CP LED pspice
    Text: Am79R79/R100/R101 SLIC Evaluation Board User’s Guide 1999 The contents of this document are provided in connection with Advanced Micro Devices, Inc. “AMD” products. AMD makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves


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    PDF Am79R79/R100/R101 820nF 1N4003 7979PLCC AM79R79 2N3906 555 timer SPICE model 100U 74C04 GR-1089-CORE TISP61089AD TLC555CP LED pspice

    rs-2b 3

    Abstract: AM79Q021 100U AM7942 GR-1089-CORE JS11 JS12 TCM1060 AMD slac jr2 transistor
    Text: Am7942 SLIC Evaluation Board User’s Guide 1999 The contents of this document are provided in connection with Advanced Micro Devices, Inc. “AMD” products. AMD makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves


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    PDF Am7942 470nF rs-2b 3 AM79Q021 100U GR-1089-CORE JS11 JS12 TCM1060 AMD slac jr2 transistor

    IRF7509

    Abstract: mosfet irf 150 IRF MOSFET driver 50V Dual N-Channel HEXFET Power MOSFET in a SO-8 IRF P CHANNEL MOSFET 10a IRF 315
    Text: Previous Datasheet Index Next Data Sheet PD - 91270E IRF7509 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Package l Low Profile <1.1mm l Available in Tape & Reel l Fast Switching


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    PDF 91270E IRF7509 IRF7509 mosfet irf 150 IRF MOSFET driver 50V Dual N-Channel HEXFET Power MOSFET in a SO-8 IRF P CHANNEL MOSFET 10a IRF 315

    Legerity SLAC

    Abstract: Le79489 JR10 BNC-2120 gk71 100U GR-1089-CORE
    Text: Le79489 SLIC Device Evaluation Board User’s Guide Rev. B, Ver. 2 2007 For more information about all Zarlink products visit our Web Site at: www.zarlink.com Information relating to products and services furnished herein by Zarlink Semiconductor Inc. trading as Zarlink Semiconductor or its subsidiaries collectively


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    PDF Le79489 330nF 1N4003 Le79489 220nF 2200pF Legerity SLAC JR10 BNC-2120 gk71 100U GR-1089-CORE

    Le79489

    Abstract: 100U GR-1089-CORE JR10 Zarlink Programmable SLIC zarlink label RSN 310 R 36 White LED pspice model Le79Q02
    Text: Le79489 SLIC Device Evaluation Board User’s Guide Rev. B, Ver. 2 2007 For more information about all Zarlink products visit our Web Site at www.zarlink.com Information relating to products and services furnished herein by Zarlink Semiconductor Inc. or its subsidiaries collectively “Zarlink” is believed to be reliable.


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    PDF Le79489 Le79489 220nF 2200pF 1N4003 P0640EA70 100U GR-1089-CORE JR10 Zarlink Programmable SLIC zarlink label RSN 310 R 36 White LED pspice model Le79Q02

    4040 cmos

    Abstract: transistor 2N 3055 IC 74ls244 ic 2114 diode S3L 7d ls y201 AY-3-1015 ic 74ls245 IC 74LS02 ic 74LS08
    Text: Applied Microsystems Corporation 5020 148th Avenue N.E. P.O. Box 568 Redmond, WA 98052 206 882-2000 (800)426-3925 P R E L I M I N A R Y S E R V I C E M A N U A L EM-180/180B Diagnostic Emulator * Document Number 920-10648 ♦Diagnostic Emulator is a trademark of Applied Microssyterns Corp.


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    PDF 148th EM-180/180B EM-180) EM-180B) 14Install 8W401 RS401 4040 cmos transistor 2N 3055 IC 74ls244 ic 2114 diode S3L 7d ls y201 AY-3-1015 ic 74ls245 IC 74LS02 ic 74LS08

    SKM652

    Abstract: SKM692F SKM682F
    Text: SEMIKRON INC ]> m 3bE ai3bLj71 0002531 T « S E K Ô S E M IK R O N Absolute Maximum Ratings Symbol V ds V dgr Id Idm V gs Pd Tj.Tstg Visol humidity climate Values Units 1000 1000 9 36 ±20 225 - 5 5 . . + 150 2500 Class F 55/150/56 V V Conditions 1 R gs = 20 k fì


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    PDF ai3bLj71 fll3bb71 T-39-15 SKM651 SKM652F SKM681F SKM682F SKM691F SKM692F SKM652 SKM692F SKM682F

    YAN-60027N

    Abstract: RF toy plane circuit diagram LM566 49.86 mhz remote control transmitter 14 pin proportional rc toy receiver ladder diagram of AC servo motor toko KXN K LM1871N lm566 pin diagram 49 MHZ rc transmitter
    Text: LM1871 £ 2 National Semiconductor LM1871 RC Encoder/Transmitter General Description Features The LM1871 is a complete six-channel digital proportional encoder and RF transmitter intended for use as a low pow­ er, non-voice, unlicensed communication device at carrier


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    PDF LM1871 LM1871 LM1872 YAN-60027N RF toy plane circuit diagram LM566 49.86 mhz remote control transmitter 14 pin proportional rc toy receiver ladder diagram of AC servo motor toko KXN K LM1871N lm566 pin diagram 49 MHZ rc transmitter

    RF toy plane circuit diagram

    Abstract: lm566 4 ch toy remote control 14 pin proportional rc toy receiver RC proportional encoder LM1871 LM1872 fsk modulator LM566 lm566 pin diagram pin configuration of LM566 ladder diagram of AC servo motor
    Text: 531 National Semiconductor Jl â LM1871 RC Encoder/Transmitter General Description Features The LM1871 is a complete six-chahnel digital proportional encoder and RF transmitter intended for use as a low pow­ er, non-voice, unlicensed communication device at carrier


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    PDF LM1871 LM1872 LM1871 RF toy plane circuit diagram lm566 4 ch toy remote control 14 pin proportional rc toy receiver RC proportional encoder LM1871 LM1872 fsk modulator LM566 lm566 pin diagram pin configuration of LM566 ladder diagram of AC servo motor

    saa 7321

    Abstract: No abstract text available
    Text: International Rectifier Preliminary Data Sheet No. PD-9.1331 IR H M 7 1 6 0 IRHM 8I 6O REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTO R 10OVolt, 0.045Q, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate virtual immunity to SEE fail­


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    PDF 10OVolt, saa 7321