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    DIODE AND TRANSISTOR 1980 Search Results

    DIODE AND TRANSISTOR 1980 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MC1906F Rochester Electronics LLC AND Gate, DTL, CDFP14 Visit Rochester Electronics LLC Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    DIODE AND TRANSISTOR 1980 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: AO4710 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET The AO4710 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side


    Original     		PDF AO4710 AO4710 AO4710L AO4710L

    AO4710

    Abstract: No abstract text available
    Text: AO4710 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET The AO4710 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side


    Original     		PDF AO4710 AO4710

    Untitled

    Abstract: No abstract text available
    Text: AO4710 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM The AO4710/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS ON , and low gate charge. This device is suitable for use as a low side


    Original     		PDF AO4710 AO4710/L AO4710 AO4710L -AO4710L

    AO4710

    Abstract: No abstract text available
    Text: AO4710 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM The AO4710/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS ON , and low gate charge. This device is suitable for use as a low side


    Original     		PDF AO4710 AO4710/L AO4710 AO4710L -AO4710L

    free transistor equivalent book 2sc

    Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original     		PDF X10679EJHV0SG00 free transistor equivalent book 2sc uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002

    IC 7413

    Abstract: NSL5027 equivalent Z340 LM340-XX LM324 DIL TTL 74137 transistor LM320K-15 transistor 7413 NSL5027 Germanium power diode
    Text: LM340 Series Three Terminal Positive Regulators National Semiconductor Application Note 103 George Cleveland August 1980 LM340 Series Three Terminal Positive Regulators INTRODUCTION The LM340-XX are three terminal 1 0A positive voltage regulators with preset output voltages of 5 0V or 15V The


    Original     		PDF LM340 LM340-XX IC 7413 NSL5027 equivalent Z340 LM324 DIL TTL 74137 transistor LM320K-15 transistor 7413 NSL5027 Germanium power diode

    Discrete RF Semiconductors: Alive and Well

    Abstract: No abstract text available
    Text: Discrete RF Semiconductors: Alive and Well By Rick Cory, Skyworks Solutions, Inc. In the early 1980s, I was faced with a choice. I was working for a small microwave diode manufacturer as a test engineer, happily integrating stand-alone test equipment into systems controlled by first-generation IBM personal computers. My division vice


    Original     		PDF 1980s, Discrete RF Semiconductors: Alive and Well

    SN74BCT244

    Abstract: 74AC 74ACT11244 74ACT16244 SN74ABT16501 SN74ABT244 510CM sn74als series
    Text: EB200E Widebus Circuits EB200E WidebusTM Circuits Author: Eilhard Haseloff Date: 03-23-1992 Rev.: A Revised 09-14-1995 1 Application Lab EB200E Widebus Circuits The introduction of surface mount technology at the beginning of the 1980s led to a substantial reduction in space requirement on a board. The customer


    Original     		PDF EB200E 1980s 16-bit 32-bit SN74BCT244 74AC 74ACT11244 74ACT16244 SN74ABT16501 SN74ABT244 510CM sn74als series

    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    Basic principle of AC to DC conversion using SCR

    Abstract: SCR TRANSISTOR 6NTP2A high power Triode for induction heating Semiconductor Devices, Diode, and SCR Catalog SCR gate Control IC asymmetrical SCR ericsson telecom catalog A101 TRANSISTOR SCR 214
    Text: TISP Types Introduction This section covers the overvoltage protection functions and Bourns TISP® Totally Integrated Surge Protector thyristor SPDs (Surge Protective Devices) in terms of evolution, function, silicon structure, electrical characteristics, electrical rating and device


    Original     		PDF 8200M, 8201M 40xxL1BJ, 40xxH1BJ 3700F3, 4700F3 4360H3BJ Basic principle of AC to DC conversion using SCR SCR TRANSISTOR 6NTP2A high power Triode for induction heating Semiconductor Devices, Diode, and SCR Catalog SCR gate Control IC asymmetrical SCR ericsson telecom catalog A101 TRANSISTOR SCR 214

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    ks621k30

    Abstract: RFT Semiconductors Diode and Transistor 1980
    Text: mMBSK Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Darlington Transistor Modules Ratings and Characteristics 1.0 and molybdenum. This assembly is next soldered to a copper collector electrode along with a free-wheeling diode chip. The


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    inverter welder schematic diagram

    Abstract: inverter welder schematic inverter welder schematic 1 phase welder FERRITE TRANSFORMER design hybrid inverter welder schematic diagram 250A darlington transistor electrical schematic diagram WELDER darlington pair transistor table inverter welder 4 schematic schematic diagram induction heater
    Text: m MBSK Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Darlington Transistor Modules Ratings and Characteristics 1.0 and molybdenum. This assembly is next soldered to a copper collector electrode along with a free-wheeling diode chip. The


    OCR Scan     		PDF tri300 inverter welder schematic diagram inverter welder schematic inverter welder schematic 1 phase welder FERRITE TRANSFORMER design hybrid inverter welder schematic diagram 250A darlington transistor electrical schematic diagram WELDER darlington pair transistor table inverter welder 4 schematic schematic diagram induction heater

    Untitled

    Abstract: No abstract text available
    Text: 4N35 4N36 4N37 T O ^ OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a npn silicon photo­ transistor. They are suitable fo r use with TTL integrated circuits. Features • • • • • Fast switching speeds Low saturation voltage


    OCR Scan     		PDF E90700 0110b S3T31 0035b35 bbS3T31 Q03Sb3b

    WESTINGHOUSE DIODE

    Abstract: WT600 westinghouse transistors WT635-01D westcode sw Westcode T-635
    Text: 9709955 dESTCODE W ESTCODE S EM IC O N D U C TO R S _ 3 4 C T SEMICONDUCTORS m De J 01741 TTD'^ SS _D' T - 33-29 D0D1741 Technical WESTCODE SEMICONDUCTORS Publication WT600 Issue 1 December 1980 Discrete Power Darlington Transistor Types WT635-01 & WT635-02


    OCR Scan     		PDF D0D1741 WT635-01 WT635-02 WT600 WT635-01D/-02D) T635-00D T635-00M 3-4-16U WESTINGHOUSE DIODE WT600 westinghouse transistors WT635-01D westcode sw Westcode T-635

    ks621k30

    Abstract: D100-101 Diode and Transistor 1980
    Text: MMÊBŒK Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Darlington Transistor Modules Ratings and Characteristics represents the peak collector emitter voltage and collector current limits for the device. These are instantaneous limits. The


    OCR Scan     		PDF

    KS621K30

    Abstract: transistor S56 transistor s55 lem lc 300 KS621 powerex ks62 transistor VCEO 1000V
    Text: POWBÌEX KS621K30 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 300 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in


    OCR Scan     		PDF KS621K30 Amperes/1000 KS621K30 transistor S56 transistor s55 lem lc 300 KS621 powerex ks62 transistor VCEO 1000V

    ks621k30

    Abstract: No abstract text available
    Text: KS621K30 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1600 412 925-7272 Single Darlington Transistor Module 300 Amperes/1000 Volts O U T L I N E D R A W IN G Description: The Powerex Single Darlington Transistor Modules are high power


    OCR Scan     		PDF KS621K30 Amperes/1000 KSS21K30 ks621k30

    Untitled

    Abstract: No abstract text available
    Text: KS621K40A41 Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1BOO 412 925-7272 Single Darlington Transistor Module 400 Amperes/1000 Volts O U T L I N E DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in


    OCR Scan     		PDF KS621K40A41 15697-1BOO Amperes/1000

    KD621230

    Abstract: D1220 300 volt 5 ampere transistor a 31 diode oas transistors d100
    Text: m V E R E X KD621230 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 300 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use


    OCR Scan     		PDF KD621230 Amperes/1200 D-100 KD621230 D1220 300 volt 5 ampere transistor a 31 diode oas transistors d100

    Untitled

    Abstract: No abstract text available
    Text: KD621230 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U d l D s r lin C jtO P Transistor Module 300 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use


    OCR Scan     		PDF KD621230 Amperes/1200 7214b21

    transistor D94

    Abstract: transistor D95 KD621K30 ST DARLINGTON TRANSISTOR 10-6327 300 volt 16 ampere transistor
    Text: miVEREX KD621K30 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U 3 l D d flIn Q tO H Transistor Module 300 Amperes/1000 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use


    OCR Scan     		PDF KD621K30 Amperes/1000 transistor D94 transistor D95 KD621K30 ST DARLINGTON TRANSISTOR 10-6327 300 volt 16 ampere transistor

    transistor s72

    Abstract: S72 Transistor KS621K40A41 transistor b 1417 transistor s70 powerex ks62
    Text: PUMEVZGf KS621K40A41 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 400 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power


    OCR Scan     		PDF KS621K40A41 Amperes/1000 transistor s72 S72 Transistor KS621K40A41 transistor b 1417 transistor s70 powerex ks62