aeg rectifier B 300 C 125
Abstract: NTTS2P03R2 NTTS2P03R2G
Text: NTTS2P03R2 Power MOSFET −2.48 Amps, −30 Volts P−Channel Enhancement Mode Single Micro8t Package Features • • • • • • http://onsemi.com Ultra Low RDS on Higher Efficiency Extending Battery Life Miniature Micro8 Surface Mount Package Diode Exhibits High Speed, Soft Recovery
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NTTS2P03R2
NTTS2P03R2/D
aeg rectifier B 300 C 125
NTTS2P03R2
NTTS2P03R2G
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Untitled
Abstract: No abstract text available
Text: NTTS2P03R2 Power MOSFET −2.48 Amps, −30 Volts P−Channel Enhancement Mode Single Micro8t Package Features • • • • • • http://onsemi.com Ultra Low RDS on Higher Efficiency Extending Battery Life Miniature Micro8 Surface Mount Package Diode Exhibits High Speed, Soft Recovery
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NTTS2P03R2
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aeg vde 0435
Abstract: oki relay aeg thyristors aeg diode Si 61 L 240V AC/48v output rectifiers circuit diagrams
Text: CONTA-ELECTRONICS ELECTRONICS CONTA-ELECTRONICS CONTA-ELECTRONICS Program Overview 3 4 5 6 10 14 16 22 23 25 27 30 32 34 35 38 39 40 44 46 48 50 52 54 56 58 66 67 68 70 76 90 91 92 94 95 96 98 100 102 104 106 110 112 113 Fuse, Component, Diode and Indicator Modules
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CMS-UI60-UI
D-33161HÃ
aeg vde 0435
oki relay
aeg thyristors
aeg diode Si 61 L
240V AC/48v output rectifiers circuit diagrams
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BPV10
Abstract: Avalanche photo diode compatible with 850 nm LED AN243 color sensitive PHOTO TRANSISTOR DK-2750 TSHF5400 infrared 950nm United Detector Technology, silicon photodiode AN243 microchip
Text: M AN243 Fundamentals of the Infrared Physical Layer Author: Paul Barna Microchip Technology Inc. Steve Schlanger Aegis Technologies LLC INTRODUCTION Infrared light, commonly referred to as “IR”, is a common, easy-to-use, low power and low-cost media to
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AN243
DK-2750
D-85737
NL-5152
BPV10
Avalanche photo diode compatible with 850 nm LED
AN243
color sensitive PHOTO TRANSISTOR
TSHF5400
infrared 950nm
United Detector Technology, silicon photodiode
AN243 microchip
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diode A5F
Abstract: diode aegis a diode aegis aegis diode
Text: AEGIS SEMICONDUTORES LTDA. A5F:600.XXHY VOLTAGE RATINGS VRRM , VR – V rep. peak reverse voltage Part Number Max. VRSM , VR – (V) Max. nonrep. peak reverse voltage TJ = 0 to 125ºC TJ = -40 to 0ºC TJ = 25 to 125ºC A5F:600.02HY 200 200 300 A5F:600.04HY
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O-200AC
diode A5F
diode aegis a
diode aegis
aegis diode
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TO-200AD
Abstract: diode aegis a 125OC 200AD 3000a diode aegis AEGIS DIODE
Text: AEGIS SEMICONDUTORES LTDA. A5N:1000.XXH VOLTAGE RATINGS Part Number VRRM , VR – V rep. peak reverse voltage Max. VRSM , VR – (V) Max. nonrep. peak reverse voltage TJ = 0 to 125OC TJ = -40 to 0OC TJ = 25 to 125OC A5N:1000.22H 2200 2200 2300 A5N:1000.24H
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125OC
O-200AD
TO-200AD
diode aegis a
125OC
200AD
3000a
diode aegis
AEGIS DIODE
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IXAN0044
Abstract: D94013DE ups manufacturing transformer diagram Bridge Rectifiers aeg MEO260-12DA3 AEG static inverter MOSFET welding INVERTER welding inverter circuit diagrams calculation of diode snubber calculation of IGBT snubber
Text: Fast Recovery Epitaxial Diodes FRED Characteristics - Applications - Examples IXAN0044 Rüdiger Bürkel, Thomas Schneider During the last 10 years, power supply topology has undergone a basic change. Power supplies of all kinds are now constructed so that heavy and bulky
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IXAN0044
D94013DE)
IXAN0044
D94013DE
ups manufacturing transformer diagram
Bridge Rectifiers aeg
MEO260-12DA3
AEG static inverter
MOSFET welding INVERTER
welding inverter circuit diagrams
calculation of diode snubber
calculation of IGBT snubber
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diode byt 87
Abstract: aeg diode Si 01 BYT 1000 BYT87/600 diode byt Y2050
Text: E G CORP 17E D □0 5 = 1 ^ 000^013 5 BYT 87 TifLSiFPÄSM electronic GealfteTeChnotogies T - 0 3 - 1 7 Ultra Fast Recovery Silicon Power Diode Application: Fast switched mode power supplies, freeweeling and snubber diode in motorcontrol circuits Features:
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aeg diode
Abstract: RG201 diode aeg ir 0588 LL4154 DIODE WITH SOD CASE
Text: AEG CORP 17E I> aOSTHeb 00QTÔ77 b LL4154 il electronic tu li Creative Technologies Silicon Epitaxial Planar Diode T - G Z - O Applications: Extreme fast switches Features: • Electrical data identical with the device 1N 4154 Dimensions in mm Terminals are tin plated
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0Q5ci45Ã
LL4154
r-G2-01
mmx50
11-jr
aeg diode
RG201
diode aeg
ir 0588
LL4154
DIODE WITH SOD CASE
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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backward diode
Abstract: tunnel diode General Electric "backward diode"
Text: P j p i GE C P L E S S E Y CT3508-1.2 MIXER & DETECTOR DIODES - INTRODUCTION M ETAL S E M IC O N D U C TO R SC H O TTK Y BA RRIER DIO DES INTRODUCTION A mixer is a sensitive receiver circuit which makes use of the nonlinear properties of a mixer diode to produce a
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CT3508-1
backward diode
tunnel diode General Electric
"backward diode"
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duo pentode
Abstract: D10de diode PIN 1 diode pin
Text: •6BV7 DUO - DIODE POWER a MPUHER PENTODE ftgypRAT. E le c tr ic a l: DATA ^ H eater, fo r U n ip o ten tia l Cathodes V oltage Current 6 .3 0 .8 a . c . o r d .c .v o lt s amps D ir e c t In te re le c tro d e C a p a c ita n c e s:0 Pentode U n it: Grid to P la te
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AEG - AKTIENGESELLSCHAFT
Abstract: t31f aeg t31f aeg t31f
Text: A E G -A KTIE N G ES ELLSC H AFT fllC D • 0021413 GQQ5fl04 7 ■ AEGG T3 1F Typenreihe/Type range_ T 3 1 F _ 2 0 0 * 400 Elektrische Eigenschaften Electrical properties Höchstzulässige W erte M axim um perm issible values
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Bel 188
Abstract: T188F RQK-10 450C DIN41814
Text: A E G-AKTIENGESELLSCHAFT Û1C ]> • D Q e ^ m S QQQSflbl Ö ■ AEGG T 188 F 600 800 1000 1100 1200 1300 Typenreihe/Type range T188F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Itavm Rückwärts-Spitzensperrspannung Effektiver Durchlaßstrom
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T188F
T188F
Bel 188
RQK-10
450C
DIN41814
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DIN41814-155B4
Abstract: T1052 T1052S
Text: A E ^-AKTIENGESELLSCHAFT filC D • D O S T H I S GOGS'iSM H ■ AEGG T 1052 S T ypenreihe/Type range_ T T 0 5 2 S _ 600_ 800_ 1000_ Elektrische Eigenschaften Höchstzulässige W erte U o rm , U
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T1052S
DIN41814-155B4
T1052
T1052S
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AEG T 178
Abstract: AEG T 178 N JT178F aeg t 130 N ic pt 2223 T178F t1ls DIN41814 W101 AEG T 1900
Text: 0029426 A E G CORP 81C 0 5 8 5 4 AEG CORP ~äi Typenreihe/Type ränge T178F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte U drm>Urrm Periodische Vorwärts-und Rückwärts-Spitzensperrspannung Effektiver Durchlaßstrom Ithmsm Dauergrenzstrom
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JT178F
T178F
AEG T 178
AEG T 178 N
JT178F
aeg t 130 N
ic pt 2223
t1ls
DIN41814
W101
AEG T 1900
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T468S
Abstract: T470 t4705 AEG T468 50 hz sinus generator T470S AEG T 250 N 700
Text: .AEG CORP SI DE | 0 0 2 =1421, O O D S I I D I 2 T 468 S T470S Typenreihe/Type range T468S T470S 1400 1400 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte U drmi U hrm Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Effektiver Durchlaßstrom
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T468S
T470S
T468S
T470S
T470
t4705
AEG T468
50 hz sinus generator
AEG T 250 N 700
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b &w tv circuit
Abstract: A1050
Text: A E G-AKTIENGESELLSCHAFT Ö1C » Hi OGSTMIS □QOS'ìTS b • AEG6 3 A 1050 S Typenreihe/Type range A1050S Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Periodische VorwärtsU drm Spitzensperrspannung Periodische RückwärtsU rrm
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A1050
A1050S
-40oC,
b &w tv circuit
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15- 05819
Abstract: AEG T72F aeg diode S100 T72F um 44 diode DUB H4 circuit
Text: 0029426 A E G 81C 05818 CORP AEG CORP 0 1 De | □□STMEtzi DDGSfllfl 3 • T 7 2 F €> T y p e n re ih e /T y p e ra n g e T72F E le k tris c h e E ig e n s c h a fte n Electrical* p ro p e rtie s 200 * H ö c h s tz u lä s s ig e W e rte M a x im u m p e rm is s ib le v a lu e s
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tv 256 diode
Abstract: DIN41814 tv 256 R diode DIN41814-152A4 152A4
Text: A E G - A K T I E NGE SE LLSC HA FT Ô1C ì> ÜOETMIS 0Qa5^b7 2 • AEGG A 358 S 600 Typenrelhe/Type range A 358 S Elektrische Eigenschaften Electrical properties H öchstzulässige Werte Periodische VorwärtsU drm Spitzensperrspannung Periodische RückwärtsUrrm
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DIN41814â
152A4
tv 256 diode
DIN41814
tv 256 R diode
DIN41814-152A4
152A4
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AE6G
Abstract: DIN41814 DIN41814-153D4 PA618
Text: A E G - A K T I E NG ES EL LS CH AFT fllC » • GOBTMIS 0005^70 2 ■ AEGG p A 618 S Typenreihe/Type range A618S Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Periodische VorwärtsU drm Spitzensperrspannung Periodische RückwärtsU rrm
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D021415
A618S
140aC
DIN41814-153D4
AE6G
DIN41814
PA618
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AA REVISIONS D IS T 22 LTR DESCRIPTION C1 DATE REVISED PER E C Q -09- 024927 DWN APVD KK AEG 09N O V09 M A T E R IA L :
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ECO-09-024927
09NOV09
UL94V-0.
81//m[
13JUN2005
31MAR2000
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MAG45
Abstract: eco 5v 4805
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 4 5 3 2 RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. .850 REVISIONS L0C DIST AA 22 LTR B MAX DATE DWN APVD 14 0 C T 2 0 0 8 VL TX DESCRIPTION REV PER ECO—0 8 —030026 KK AEG
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02MAR2005
MAG45
10BASE-T
31MAR2000
eco 5v 4805
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