Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE AA3 Search Results

    DIODE AA3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE AA3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BAT 62-03W Silicon Schottky Diode • Low Barrier diode for detectors up to GHz frequencies ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking BAT 62-03W L Ordering Code Pin Configuration Package Q62702-A1028


    OCR Scan
    2-03W Q62702-A1028 2-03W OD-323 S535b05 D1SD354 900MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE  DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications.  FEATURES


    Original
    5302D 5302D OT-223 5302DG-AA3-R 5302DL-T60-K 5302DG-T60-K O-126 5302DL-T92-B 5302DG-T92-B 5302DL-T92-K PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE  DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications.  FEATURES


    Original
    5302D 5302D 5302DL-AA3-R 5302DG-AA3-R 5302DL-T60-K 5302DG-T60-K 5302DL-T92-B 5302DG-T92-B 5302DL-T92-K 5302DG-T92-K PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BYP100 Preliminary data FRED Diode • Fast recovery epitaxial diode • Soft recovery characteristics Type Vrrm BYP 100 1000V fcRMS 8A frr Package Ordering Code 55ns TO-218AD C67047-A2254-A2 Maximum Ratings Parameter Symbol Mean forward current Unit


    OCR Scan
    BYP100 O-218AD C67047-A2254-A2 fl23SbOS PDF

    AA3528ASF4C

    Abstract: No abstract text available
    Text: 3.5x2.8 mm INFRARED EMITTING DIODE Part Number: AA3528ASF4C-R PRELIMINARY SPEC Features Description z Mechanically and spectrally matched to the phototransistor. SF4 Made with Gallium Aluminum Arsenide Infrared z Package : 1500pcs / reel. Emitting diodes.


    Original
    AA3528ASF4C-R 1500pcs DSAJ1358 FEB/12/2009 AA3528ASF4C PDF

    diode F4

    Abstract: AA3528SF4C f4 diode diode F4 11
    Text: INFRA-RED EMITTING DIODE AA3528SF4C Features zSUITABLE Description FOR ALL SMT ASSEMBLY AND SOLDER PROCESS. zAVAILABLE ON TAPE AND REEL. zCOMPATIBLE SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. WITH AUTOMATIC PLACEMENT EQUIPMENT. zHIGH


    Original
    AA3528SF4C AA3528SF4C-V MAR/03/2001 AA3528SF4C diode F4 f4 diode diode F4 11 PDF

    AA3528ASF4C

    Abstract: No abstract text available
    Text: 3.5x2.8 mm INFRARED EMITTING DIODE Part Number: AA3528ASF4C Features Description z MECHANICALLY AND SPECTRALLY MATCHED TO SF4 Made with Gallium Aluminum Arsenide Infrared THE PHOTOTRANSISTOR. Emitting diodes. z WATER CLEAR LENS. z PACKAGE : 1500PCS / REEL.


    Original
    AA3528ASF4C 1500PCS DSAH4240 JUN/13/2007 AA3528ASF4C PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.5x2.8mm SURFACE MOUNT LED LAMP Part Number: AA3528ZGS-AMT Green ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Green source color devices are made with InGaN Features on Sapphire Light Emitting Diode.


    Original
    AA3528ZGS-AMT 1500pcs ED4701/100 DSAL3989 NOV/20/2010 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.5x2.8mm SURFACE MOUNT LED LAMP Part Number: AA3528ZGS-AMT Green ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Green source color devices are made with InGaN Features on Sapphire Light Emitting Diode.


    Original
    AA3528ZGS-AMT 2000pcs ED4701/100 DSAL3989 SEP/01/2012 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: AA3535ZG25Z1S Green ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Green source color devices are made with InGaN on Features Al2O3 substrate Light Emitting Diode.


    Original
    AA3535ZG25Z1S 2000pcs DSAK3202 FEB/02/2013 PDF

    LM 3572

    Abstract: dec lm diode CIE1931 F1 Package substitution 2800K
    Text: 3.0x2.0mm SURFACE MOUNT LED LAMP Part Number: AA3021PR4C/Z/SI-F0 PRELIMINARY SPEC ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES WARM WHITE Description The source color devices are made with InGaN Light Emitting Diode.


    Original
    AA3021PR4C/Z/SI-F0 2000PCS DSAH0684 DEC/30/2006 LM 3572 dec lm diode CIE1931 F1 Package substitution 2800K PDF

    led 1w

    Abstract: No abstract text available
    Text: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: AA3535SEL1Z1S PRELIMINARY SPEC Hyper Orange ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Hyper Orange device is made with TS AlGaInP light Features emitting diode.


    Original
    AA3535SEL1Z1S 2000pcs DSAJ4024 MAY/20/2009 led 1w PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: AA3535ZG24Z1S PRELIMINARY SPEC Green ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Green source color devices are made with AlGaInN Features Vertical Light Emitting Diode.


    Original
    AA3535ZG24Z1S 2000pcs MAY/07/2009 DSAJ3812 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: AA3535QB24Z1S PRELIMINARY SPEC Blue ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Blue source color devices are made with AlGaInN Features Vertical Light Emitting Diode.


    Original
    AA3535QB24Z1S 2000pcs MAY/07/2009 DSAJ3811 PDF

    AA3535ZG25Z1S

    Abstract: No abstract text available
    Text: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: AA3535ZG25Z1S Green ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Green source color devices are made with InGaN on Features Al2O3 substrate Light Emitting Diode.


    Original
    AA3535ZG25Z1S 2000pcs DSAK3202 OCT/14/2011 AA3535ZG25Z1S PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: AA3535QB25Z1S Blue ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Blue source color devices are made with InGaN on Features Al2O3 substrate Light Emitting Diode.


    Original
    AA3535QB25Z1S 2000pcs Mar536 FEB/02/2013 AA3535QB25Z1S DSAK2536 PDF

    AA3535ZG25Z1S

    Abstract: No abstract text available
    Text: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: AA3535ZG25Z1S Green ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Green source color devices are made with InGaN on Features Al2O3 substrate Light Emitting Diode.


    Original
    AA3535ZG25Z1S 2000pcs DSAK3202 MAY/24/2010 AA3535ZG25Z1S PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: AA3535QB25Z1S Blue ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Blue source color devices are made with InGaN on Features Al2O3 substrate Light Emitting Diode.


    Original
    AA3535QB25Z1S 2000pcs FEB/24/2012 AA3535QB25Z1S DSAK2536 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.5x2.8 mm INFRARED EMITTING DIODE Part Number: AA3528F3S Features Description z Mechanically and spectrally matched to the phototransistor. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Package : 2000pcs / reel. z Moisture sensitivity level : level 3.


    Original
    AA3528F3S 2000pcs DSAL0863 SEP/01/20120863 SEP/01/2012 PDF

    optical CD pickup assembly

    Abstract: No abstract text available
    Text: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: AA3535QB25Z1S Blue ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Blue source color devices are made with InGaN on Features Al2O3 substrate Light Emitting Diode.


    Original
    AA3535QB25Z1S 2000pcs OCT/14/2011 DSAK2536 optical CD pickup assembly PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: AA3535SYL1Z1S PRELIMINARY SPEC Super Bright Yellow ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with AlGaInP Light Features Emitting Diode.


    Original
    AA3535SYL1Z1S 2000pcs DSAJ4025 MAY/20/2009 PDF

    optical CD pickup assembly

    Abstract: DIODE V6 SMD
    Text: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: AA3535QB25Z1S Blue ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Blue source color devices are made with InGaN on Features Al2O3 substrate Light Emitting Diode.


    Original
    AA3535QB25Z1S 2000pcs DSAK2536 MAY/09/2011 optical CD pickup assembly DIODE V6 SMD PDF

    AA3021F3S-100MAV

    Abstract: No abstract text available
    Text: 3.0x2.0mm INFRARED EMITTING DIODE Part Number: AA3021F3S-100MAV Features Description z 3.0mm x 2.0mm, 1.4mm high, only minimum space required. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Mechanically and spectrally matched to the phototransistor.


    Original
    AA3021F3S-100MAV 2000pcs DSAL0850 SEP/03/2010 AA3021F3S-100MAV PDF

    Untitled

    Abstract: No abstract text available
    Text: 3.5x3.5 mm SMD CHIP LED LAMP Part Number: AA3535ZG25Z1S Green ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Green source color devices are made with InGaN on Features Al2O3 substrate Light Emitting Diode.


    Original
    AA3535ZG25Z1S 2000pcs JUN/22/2012 AA3535ZG25Z1S DSAK3202 PDF