Untitled
Abstract: No abstract text available
Text: SKHI 23/12 R . power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions ?.1C3 '7 69CH G.H 69CKK G.H jCA=*BA310 ;CB
|
Original
|
PDF
|
OCAP30
LCAB30-1N
|
Untitled
Abstract: No abstract text available
Text: 2.1x0.7mm RIGHT ANGLE SMD CHIP LED LAMP KPJA-2107SURCK Features z2.1mmx0.7mm RIGHT ANGLE SMT LED, 1.3mm THICKNESS. HYPER RED Description The Hyper Red source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode. zLOW POWER CONSUMPTION.
|
Original
|
PDF
|
KPJA-2107SURCK
2000PCS
A5251
MAR/18/2005
|
zener diode A36
Abstract: zener diode A29 ZENER A29 a37 zener diode ZENER A26 a36 zener ZENER A34 CAZ23C24 a59 zener diode ZENER A26
Text: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ23C2V7 – CAZ23C51 Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)
|
Original
|
PDF
|
CAZ23C2V7
CAZ23C51
OT-23
MIL-STD-202,
J-STD-020C
CAZ23CXVX
zener diode A36
zener diode A29
ZENER A29
a37 zener
diode ZENER A26
a36 zener
ZENER A34
CAZ23C24
a59 zener diode
ZENER A26
|
zener diode A29
Abstract: ZENER A29 a37 zener a23 zener zener diode A36 diode ZENER A26 A26 zener a36 zener marking codes A32 a59 zener diode
Text: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ59C2V7 – CAZ59C51 Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)
|
Original
|
PDF
|
CAZ59C2V7
CAZ59C51
SC-59
MIL-STD-202,
J-STD-020C
CAZ59CXVX
zener diode A29
ZENER A29
a37 zener
a23 zener
zener diode A36
diode ZENER A26
A26 zener
a36 zener
marking codes A32
a59 zener diode
|
sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
|
OCR Scan
|
PDF
|
|
ESAD83-006
Abstract: SC-65
Text: ESAD83-006 3oa : Outline Drawings SCHOTTKY BARRIER DIODE : Features • 1&VF Low V F Super high speed sw itching. m m & m Connection Diagram High reliability by planer design, • Applications High speed power sw itching. M axim um Ratings and Characteristics
|
OCR Scan
|
PDF
|
ESAD83-006
SC-65
500ns
SC-65
|
MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
|
OCR Scan
|
PDF
|
1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
|
529/BCA
Abstract: IN914
Text: P h ililp s S em iconductors M ilitary Linear Products P roduct specification Voltage comparator 529 FEATURES DESCRIPTION • 10ns propagation delay The 529 is a high-speed analog voltage comparator which, for the first time, mates state-of-the-art Schottky diode technology
|
OCR Scan
|
PDF
|
711Dfl2L>
529/BCA
IN914
|
Untitled
Abstract: No abstract text available
Text: Biased Schottky Diode Detectors BROADBAND BIASED DETECTORS DSN Series HIGH SENSITIVITY/LOW VSWR DETECTORS DQN Series 500 MHz to 26.0 GHz ♦ Fast Response Time ♦ High Sensitivity ♦ Wide Dynamic Range ♦ Coaxial ♦ Drop-In ♦ Replaceable Connectors 100 MHz to 3.5 GHz
|
OCR Scan
|
PDF
|
200mW
DTP2018M2
|
JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: is t i January 7, 1998 RECTIFIER, up to 150V, 5A, 30ns 1N6079 1N6080 1N6081 5FF05 5FF10 5FF15 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com A X IA L LEADED HERMETICALLY SEALED SUPERFAST RECTIFIER DIODE Q UICK REFERENCE DATA Very low reverse recovery tim e
|
OCR Scan
|
PDF
|
1N6079
1N6080
1N6081
5FF05
5FF10
5FF15
TEL805-498-2111
5FF05
|
A1W TRANSISTOR
Abstract: N4001 diode a39 diode a1w* transistor DIODE 1N1343 A1W diode 1N5815 Diode diode 1N5825 TRANSISTOR A52 1N4822
Text: 2TC 000 98 2848352 DIODE TRA NSI ST OR CO INC 7^-0/- O/ E T m T 5fl4fl3SE ODDODTfl h RECTIFIERS DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG 1N 1183 1N1185 1N1185A 1N 1186 1N 1186A 1N 1187 1N1187A 1N1188 1N1188A 1N 1190 1N 1200 1N1200A 1N1201
|
OCR Scan
|
PDF
|
403SE
1N1183
1N1615
1N3743
1N4006
1N5002
1N1185
1N1616
1N3744
1N4007
A1W TRANSISTOR
N4001 diode
a39 diode
a1w* transistor
DIODE 1N1343
A1W diode
1N5815 Diode
diode 1N5825
TRANSISTOR A52
1N4822
|
ESAE83-004
Abstract: SC-65 A528
Text: ESAE83-004 6oa ’ Outline Drawings SC H O T TKY BARRIER DIODE ^ 3 . 2 to . i *.S*9 -2 . 0 7 . 2 «# • # £ : Features JEDEC • fS V , Low VF EIAJ Super high speed switching. in m & m Connection Diagram SC-65 High reliability by planer design : Applications
|
OCR Scan
|
PDF
|
ESAE83-004
SC-65
500ns
SC-65
A528
|
ESAE83-004
Abstract: SC-65
Text: ESAE83-004 6oa ’ O utline Drawings SC H O T TKY BARRIER DIODE ^ 3 . 2 to . i *.S*9 -2.0 7.2«# • # £ : Features JEDEC • fS V , Low VF EIAJ Super high speed switching. inm&m SC-65 Connection Diagram High reliability by planer design : Applications High speed power switching.
|
OCR Scan
|
PDF
|
ESAE83-004
SC-65
500ns
SC-65
|
|
|
a529
Abstract: ESAE83004 A528
Text: ESAE83-004 6oa -> a y h + -/< SC HO TTK Y BARRIER DIODE ' Features • i£V P Low VF Super high speed switching. C onnection D iagram High reliability by planer design. U • A p p lic a tio n s High speed power switching. M a xim u m Ratings and C haracteristics
|
OCR Scan
|
PDF
|
ESAE83-004
500ns
a529
ESAE83004
A528
|
ESAD83-006
Abstract: SC-65
Text: ESAD83-006<3oa SCHOTTKY BARRIER DIODE : Features • 1&VF Low V f IW M M ft Super high speed sw itchin g. • 3V — 1f « f t Connection Diagram High reliability by planer design •ffliSs * Applications H igh speed pow er sw itch in g . M axim um Ratings and Characteristics
|
OCR Scan
|
PDF
|
ESAD83-006
SC-65
500ns
SC-65
|
ESAD83-006
Abstract: SC-65 5CT25
Text: ESAD83-006<3oa SCHOTTKY BARRIER DIODE : Features • 1&VF Low V f Super high speed sw itchin g. • 3V — IW M M ft Connection Diagram 1f « f t High reliability by planer design •ffliSs * Applications H igh speed pow er sw itch in g . M axim um Ratings and Characteristics
|
OCR Scan
|
PDF
|
ESAD83-006
SC-65
500ns
40-20-o!
SC-65
5CT25
|
IFR-GDC40PW
Abstract: No abstract text available
Text: CONTENTS • LED INDICATOR LAMPS 5 • MINI TYPE LED LAMPS 11 • SPECIAL TYPE LED LAMPS 11 • TWO-COLOR LED LAMPS 13 • BLINKING LED LAMPS 13 •LIG H T BAR LED 13 . ULTRA-BRIGHT LED LAMPS 13 • LED NUMBERIC DISPLAY 15 . DOT MATRIX LED DISPLAY 19 • INFRARED EMITTING DIODE
|
OCR Scan
|
PDF
|
|
ESAD83M-004
Abstract: No abstract text available
Text: ESA D 83 M - 0 0 4 3o a .* ±>j S' 3,y M t — : Outline Drawings k SCHOTTKY BARRIER DIODE • 4 $ £ I Features Insulated package by fully m o ld in g . • i&Vp m nm & m Low V f Connection Diagram Super high speed sw itchin g. High reliability by planer design.
|
OCR Scan
|
PDF
|
ESAD83M-004
500ns
|
ESAD83M-004
Abstract: ESAD83M004
Text: ESA D 83 M - 0 0 4 3o a .* ±>j S' 3,y M t — : Outline Drawings k SCHOTTKY BARRIER DIODE • 4 $ £ I Features Insulated package by fully m o ld in g . • i&Vp m nm & m Low V f Connection Diagram Super high speed sw itchin g. High reliability by planer design.
|
OCR Scan
|
PDF
|
ESAD83M-004
500ns
ESAD83M004
|
Untitled
Abstract: No abstract text available
Text: ESAD83M -004 3 oa S' a v M* — : Outline Drawings SCHOTTKY BARRIER DIODE : Features Insulated package by fully m o ld in g . • i&vF m nm m m Low V F Connection Diagram Super high speed sw itchin g. High reliability by planer design. : Applications • M X 9 * J x 4 - y * > 'r
|
OCR Scan
|
PDF
|
ESAD83M
500ns
ESAD83M-004
|
Ry110
Abstract: diode cross reference RY104 a2305 RY115 MICROWAVE ASSOCIATES IN3716 diode ry24 RY101 1N3717
Text: D 94D 0 0 0 1 3 2 5 7 8 2 5 2 CUSTOM COMPONENTS INC 7 " - o / - o ^ Ë F | 2 5 7 f l E S S D0DDD13 4 Custom Components, Inc. Box SSUt Lebanon, AT. J. 088SS 201 534-6151 TUNNEL DIODE CROSS REFERENCE GENERAL ELECTRIC AERTECH AERTECH # C C I# AERTECH # CCI #
|
OCR Scan
|
PDF
|
QD0D013
534-61S1
A1D207A
A1D207E
A1E207A
A1E207E
A1A210D
A1A210E
A1B210D
A1B210E
Ry110
diode cross reference
RY104
a2305
RY115
MICROWAVE ASSOCIATES
IN3716
diode ry24
RY101
1N3717
|
ESAD83M-004
Abstract: P151 T930
Text: ESAD83M - 0 0 4 <3o a -> g SCHOTTKY BARRIER DIODE I Features Insulated package by fully molding. • teVp m nm &m Low Vf • x -f C o n n ectio n D iagram Super high speed switching. r > H H i- n High reliability by planer design. 1 ) : A p p lica tio n s
|
OCR Scan
|
PDF
|
ESAD83M-004
500ns
11S19
I95t/R89
Shl50
P151
T930
|
Untitled
Abstract: No abstract text available
Text: se MIKRO n Cases A 21. A 24 SEMIPACK 2 Case A 51 com. cath. = 2 Case A 52 (com. anode = 2) Case A 45 (K = 1, A = 2) Case A 54 (K = 1, A = 3) Section 2: SEMIPACK® Fast Diode Modules Type Vrrm Ifav Ifrms Tease ▲New type -r1 r- M6 V A °c A 25 °C A
|
OCR Scan
|
PDF
|
SKET330
SKKE400
|
