marking JSs
Abstract: Q62702-A376 Marking code jSs JSs diode
Text: Silicon Switching Diode Array BAW 100 For high-speed switching ● Electrically insulated diodes ● Type Marking Ordering Code tape and reel BAW 100 JSs Q62702-A376 Pin Configuration Package1) SOT-143 Maximum Ratings Parameter Symbol Values Unit Reverse voltage
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Q62702-A376
OT-143
marking JSs
Q62702-A376
Marking code jSs
JSs diode
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OMRON LY2 iec255 relay
Abstract: electromechanical relay omron ly2 12 v pcb mount relay LY2-D OMRON LY2 PTF08-E 12 V dpdt relay switch LY1F LY4N-D2 OMRON LY2 220/240 VAC
Text: Electromechanical Relays General-purpose Relay LY A Miniature Power Relay • Equipped with arc barrier. • Dielectric strength: 2,000 V. • Built-in diode models added to the LY Series. • Single-pole and double-pole models are applicable to operating
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Y92H-3
J002-E1-10
OMRON LY2 iec255 relay
electromechanical relay omron ly2
12 v pcb mount relay
LY2-D
OMRON LY2
PTF08-E
12 V dpdt relay switch
LY1F
LY4N-D2
OMRON LY2 220/240 VAC
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zener diode A36
Abstract: zener diode A29 ZENER A29 a37 zener diode ZENER A26 a36 zener ZENER A34 CAZ23C24 a59 zener diode ZENER A26
Text: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ23C2V7 – CAZ23C51 Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)
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CAZ23C2V7
CAZ23C51
OT-23
MIL-STD-202,
J-STD-020C
CAZ23CXVX
zener diode A36
zener diode A29
ZENER A29
a37 zener
diode ZENER A26
a36 zener
ZENER A34
CAZ23C24
a59 zener diode
ZENER A26
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zener diode A29
Abstract: ZENER A29 a37 zener a23 zener zener diode A36 diode ZENER A26 A26 zener a36 zener marking codes A32 a59 zener diode
Text: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ59C2V7 – CAZ59C51 Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)
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CAZ59C2V7
CAZ59C51
SC-59
MIL-STD-202,
J-STD-020C
CAZ59CXVX
zener diode A29
ZENER A29
a37 zener
a23 zener
zener diode A36
diode ZENER A26
A26 zener
a36 zener
marking codes A32
a59 zener diode
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free transistor equivalent book 2sc
Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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X10679EJHV0SG00
free transistor equivalent book 2sc
uPA1556AH
The Japanese Transistor Manual 1981
samsung UHF/VHF TV Tuner
MOSFET cross-reference 2sk
PD431000A-X
upper arm digital sphygmomanometer circuit diagram
PD72001
uPC1237
uPC 2002
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a37a
Abstract: BB515 SOD123 BB515 MARKING CODE diode sod123 t4 DIODE T4 marking diode marking 20
Text: 7110fl2b DG bö 37 7 Tbö IPHIN BB515 UHF VARIABLE CAPACITANCE DIODE The B B515 is a silicon variable capacitance diode in a hermetically sealed glass envelope and intended intended for application in U H F tuners. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage
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7110fl2b
BB515
BB515
OD123.
a37a
BB515 SOD123
MARKING CODE diode sod123 t4
DIODE T4 marking
diode marking 20
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lt760
Abstract: YG811S0
Text: YG811S09 5A h+ —/ • <ÿ * ± 'J K SCHOTTKY BARRIER DIODE ’ Features Insulated package by fully molding. #{& V f Low Vf Connection Diagram Super high speed switching. •t v -*— High reliability by planer design. I Applications High speed power switching.
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YG811S09
500ns,
Temperatu7651
I95t/R89)
lt760
YG811S0
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25mA 10KV DIODE
Abstract: 10kv rectifier
Text: RECTIFIER, up to 10kV, 290mA, 300ns January 7, 1998 SM75F SM100F TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com QUICK REFERENCE DATA AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE FAST RECTIFIER DIODE V r = 7.5-10kV If = 290mA trr = 300nS Low reverse recovery time
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290mA,
300ns
SM75F
SM100F
TEL805-498-2111
5-10kV
290mA
25mA 10KV DIODE
10kv rectifier
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diode Array BAW 100 • For high-speed switching • Electrically insulated diodes Type M a r k in g O r d e r in g C o d e ta p e a n d re e l BAW 100 JS s Q62702-A376 P in C o n fig u r a tio n P a c k a g e 1) S O T -143 o- f<3- 0
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Q62702-A376
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YG811S09
Abstract: No abstract text available
Text: YG811S09 5A h + —/ •<ÿ * ± 'J K SCHOTTKY BARRIER DIODE ’ Features Insulated package by fully m olding. #{& V f Low V f Connection Diagram Super high speed sw itching. • tv -* — High reliability by planer design. I Applications High speed pow er sw itchin g.
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500ns,
YG811S09
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A37 diode
Abstract: ERA15 general purpose diode marking code -08
Text: E R A 1 5 i .oa M JE N 'ii : Outline Drawings GENERAL USE RECTIFIER DIODE I Features • jS'J'Sttfctf), 5 m m li7 f S*& ff A * * WAS : Marking Ultra small package, possible for 5mm pitch automatic insertion. • S f&IR te High reliability A 7 -3 —K : Ö
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ERA15
ERAI5-08
A37 diode
general purpose diode marking code -08
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mark AT0
Abstract: ERA15 T151 T810 AT-05 general purpose diode marking code -06 general purpose diode marking code -08
Text: ERA15 1 .OA Outline Drawings GENERAL USE RECTIFIER DIODE * Features • f c / J '8 M c fc *> , 5 m e 7 f m 3 T O Ultra small package, possible for 5mm pitch automatic IS iT F • Marking insertion. • Sif&IRte High reliability A 7 - 3- K : Ö Color code : White
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ERA15
19S24
95t/R89)
mark AT0
T151
T810
AT-05
general purpose diode marking code -06
general purpose diode marking code -08
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A37 diode
Abstract: diode a37 KS826S04 IR3e
Text: KS826S04I5A * ± 'j 1 O utline D raw ings SCHOTTKY BARRIER DIODE • t t * ’ Features Surface m ount device. • i&VF Low V f m wm &m C onnection D iagram Super high speed sw itchin g. • *H£ High reliability by planer design. \4 : A p p lica tio n s
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KS826S04
500ns,
a-180*
A37 diode
diode a37
IR3e
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A37 diode
Abstract: KS826S04 A180 a378
Text: KS826S04I5A * ± 'j 1 O utline D raw ings SCHOTTKY BARRIER DIODE • t t * ’ Features Surface m ount device. • i&VF Low V f m wm &m C onnection D iagram Super high speed sw itchin g. • *H£ High reliability by planer design. \4 : A p p lica tio n s
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KS826S04
500ns,
a-180*
A37 diode
A180
a378
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Untitled
Abstract: No abstract text available
Text: KS826S04I5A * ± 'j 1 O utline D raw ings SCHOTTKY BARRIER DIODE • t t * ’ Features Surface m ount device. • i& V F Low V f m wm &m C onnection D iagram Super high speed sw itchin g. • *H£ High reliability by planer design. \4 : A p p lica tio n s
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KS826S04I5A)
500ns,
E3TS30
EaTa30
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LIC HD 13
Abstract: YG811S09
Text: YG811S09 5A i> 3 SCHOTTKY BARRIER DIODE ’ Features Insulated package by fully m olding. • <&VF Low V f m m m & m Connection Diagram Super high speed sw itching. • t v — t - a m tC c ts s ifU tt H igh reliability by planer design. : A p p lic a tio n s
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SC-67
500ns,
LIC HD 13
YG811S09
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k531
Abstract: ERC88M-009 A374
Text: ERC88M-009I5A > 3 : Outline Drawings 'yhf— ' O J T f ' f t - F SCH O TTKY B A R R IE R DIODE : Features JEDEC EIAJ Insulated package by fully molding. SC-67 • <&VF Low V F Connection Diagram Super high speed switching. • y i s - i —ttmC'kz&im m High reliability by planer design.
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SC-67
500ns,
k531
ERC88M-009
A374
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A37 diode
Abstract: ERA15 diode a37 marking code ca MARKING CODE A37 general purpose diode marking code -06 37A37
Text: E R A 1 5 i .oa M JE N 'ii : Outline Drawings G EN ER A L U SE R E C T IF IE R DIODE I Features • jS'J'Sttfctf), 5 m m li7 f S*& ff A * * WAS : Marking Ultra small package, possible for 5mm pitch automatic insertion. • Sf&IRte High reliability A 7 -3 —K : Ö
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ERA15
ERAI5-08
A37 diode
diode a37
marking code ca
MARKING CODE A37
general purpose diode marking code -06
37A37
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Untitled
Abstract: No abstract text available
Text: se MIKRO n Cases A 21. A 24 SEMIPACK 2 Case A 51 com. cath. = 2 Case A 52 (com. anode = 2) Case A 45 (K = 1, A = 2) Case A 54 (K = 1, A = 3) Section 2: SEMIPACK® Fast Diode Modules Type Vrrm Ifav Ifrms Tease ▲New type -r1 r- M6 V A °c A 25 °C A
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SKET330
SKKE400
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ERC80M-006
Abstract: No abstract text available
Text: ERC80M -006 5 a SCHOTTKY BARRIER DIODE I Features titz7 ; u t - >\,K9 4 7° • 1&lJtt It Insulated package by fully m o ld in g . • te V F Low V p Connection Diagram S up e r h ig h speed s w itc h in g . H ig h reliability by planer d e sig n . ! Applications
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ERC80M-006
SC-67
500ns
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A37 diode
Abstract: No abstract text available
Text: E R A 1 5 i .oa M J E N ' i i : O u t lin e D r a w in g s GENERAL USE RECTIFIER DIODE I Features • jS 'J'S ttfctf), 5 m m li 7 f S*&ff A* WAS Ultra small package, possible for 5m m pitch autom atic : M a r k in g insertion. • S f& IR te High reliability
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95t/R89)
A37 diode
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Untitled
Abstract: No abstract text available
Text: KS826S04I5A ! O utlin e D ra w in g s SCHOTTKY BARRIER DIODE : Features Surface m ount device. • V f Low V f • ta y C o n n e c tio n D ia g ra m Super high speed sw itchin g. •T V - * - * s i ± High reliability by planer d e s ig n . \4 : A p p lic a tio n s
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KS826S04I5A)
500ns,
KS826S04
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Untitled
Abstract: No abstract text available
Text: E R C 8 0 M 0 0 6 5a s ± < 1' « íj ^ ík SCHOTTKY BARRIER DIODE • & £ : Features tit-.-? >i>>\>¥? - f 7° • ia lJ # i t Insulate d packa g e by fu lly m o ld in g . • te V F L o w Vp ■ * * « > £ Connection Diagram S u p e r h ig h speed s w itc h in g .
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SF 369
Abstract: ERC80M-006 H125
Text: ERC80M -006 5 a : O utline D ra w in g s SCHOTTKY BARRIER DIODE : Features • 1&lJt t if a* fa & z tit-.y ^ K 7' In su la te d p a ckag e by fu lly m o ld in g . • te V F Low V p C o n n e c tio n D ia g ra m S u p e r h ig h speed s w itc h in g .
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ERC80M-006
500ns
SF 369
H125
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