DIODE A46
Abstract: A47 diode skkh570 4092 thyristor skkt 90 A76A semipack skkh 106 SKKD380 A36 diode semipack skkt 330
Text: 1996-2012:QuarkCatalogTempNew 9/20/12 3:44 PM Page 1996 INTERCONNECT TEST & MEASUREMENT 25 SEMIPACK Isolated Diode/Diode and Thyristor/Diode Modules SEMIPACK® Isolated Diode/Diode and Single Diode Modules 27 Amp to 700 Amp RoHS SKKD 46/16 Stock No. Mfr.’s
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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OMRON LY2 iec255 relay
Abstract: electromechanical relay omron ly2 12 v pcb mount relay LY2-D OMRON LY2 PTF08-E 12 V dpdt relay switch LY1F LY4N-D2 OMRON LY2 220/240 VAC
Text: Electromechanical Relays General-purpose Relay LY A Miniature Power Relay • Equipped with arc barrier. • Dielectric strength: 2,000 V. • Built-in diode models added to the LY Series. • Single-pole and double-pole models are applicable to operating
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Y92H-3
J002-E1-10
OMRON LY2 iec255 relay
electromechanical relay omron ly2
12 v pcb mount relay
LY2-D
OMRON LY2
PTF08-E
12 V dpdt relay switch
LY1F
LY4N-D2
OMRON LY2 220/240 VAC
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STWA36NM60ND
Abstract: 36NM60ND
Text: STB36NM60ND, STW36NM60ND, STWA36NM60ND N-channel 600 V, 0.097 Ω typ., 29 A FDmesh II Power MOSFET with fast diode in D2PAK, TO-247 and TO-247 long leads packages Datasheet − preliminary data Features Order codes VDSS @TJ max. STB36NM60ND STW36NM60ND
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STB36NM60ND,
STW36NM60ND,
STWA36NM60ND
O-247
STB36NM60ND
STW36NM60ND
STWA36NM60ND
36NM60ND
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zener diode A36
Abstract: zener diode A29 ZENER A29 a37 zener diode ZENER A26 a36 zener ZENER A34 CAZ23C24 a59 zener diode ZENER A26
Text: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ23C2V7 – CAZ23C51 Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)
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CAZ23C2V7
CAZ23C51
OT-23
MIL-STD-202,
J-STD-020C
CAZ23CXVX
zener diode A36
zener diode A29
ZENER A29
a37 zener
diode ZENER A26
a36 zener
ZENER A34
CAZ23C24
a59 zener diode
ZENER A26
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zener diode A29
Abstract: ZENER A29 a37 zener a23 zener zener diode A36 diode ZENER A26 A26 zener a36 zener marking codes A32 a59 zener diode
Text: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ59C2V7 – CAZ59C51 Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)
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CAZ59C2V7
CAZ59C51
SC-59
MIL-STD-202,
J-STD-020C
CAZ59CXVX
zener diode A29
ZENER A29
a37 zener
a23 zener
zener diode A36
diode ZENER A26
A26 zener
a36 zener
marking codes A32
a59 zener diode
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SD965
Abstract: J13003 sd965 transistor j13003 TRANSISTOR BC846 SOT-23 EBC J31C Transistor J31C J127 mosfet J42C SC4242
Text: Mini size of Discrete semiconductor elements Diode Rectifier Schottky SOD-723 / SOD-523 / SOD-323 TO-252 / TO263 SOT-23-6 / TSSOP-8 / SOP-8 mini-MELF / MELF SMA / SMB / SMC Switching SOT-523 / SOT-323 / SOT-23 Bridge Single phase / Three phase RF ( low capacitance ) & Varactor
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OD-723
OD-523
OD-323
O-252
OT-23-6
OT-523
OT-323
OT-23
OT-323
SD965
J13003
sd965 transistor
j13003 TRANSISTOR
BC846 SOT-23 EBC
J31C Transistor
J31C
J127 mosfet
J42C
SC4242
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YG831C03R
Abstract: No abstract text available
Text: YG831C03R 30V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 13Min 3.7±0.2 1.2±0.2 Features Low VF Super high speed switching. High reliability by planer design. 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2
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YG831C03R
O-22OF15)
13Min
SC-67
YG831C03R
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cp4071
Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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68B09
SN74ALS04BN
SN74ALS08N
SN74ALS00AN
CA3046
uA733
LM311P
LM318
CA3094
78H05
cp4071
data sheet IC 7408
2N4891
IC 7408
MDA970A2
MDA2500
1854-0071
MDA2502
2N4342
IC TTL 7400
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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free transistor equivalent book 2sc
Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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X10679EJHV0SG00
free transistor equivalent book 2sc
uPA1556AH
The Japanese Transistor Manual 1981
samsung UHF/VHF TV Tuner
MOSFET cross-reference 2sk
PD431000A-X
upper arm digital sphygmomanometer circuit diagram
PD72001
uPC1237
uPC 2002
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TDA1301T
Abstract: B302 UKA655
Text: 1^53=524 00=53403 2fl4 « S I C 3 Philips Semiconductors Product specification Digital servo processor DSIC2 TDA1301T FEATURES - 28-pin SO package The DSIC2 realizes the following servo functions: - Great flexibility towards different CD mechanisms • Diode signal preprocessing
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TDA1301T
TDA1301T
B302
UKA655
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cv 1924
Abstract: HM-TR F760 ERC80-004 T151 T460 T810 T930 VU48
Text: ERC80-004 5A '> 3 SCHOTTKY BARRIER DIODE I Features • ttV F Low V F Super high speed switching. Connection Diagram High reliability by planer design. • ElSs I Applications High speed power switching. Maximum Ratings and Characteristics • £ * * * * $ * * : Absolute Maximum Ratings
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ERC80-004
SC-46
500ns
e3TB30Â
I95t/R89
Shl50
cv 1924
HM-TR
F760
T151
T460
T810
T930
VU48
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diode sm40
Abstract: diode sm50 25mA 10KV DIODE
Text: RECTIFIER, up to 10kV, 300mA, 2.5ms January 7, 1998 SM40 SM75 SM50 SM100 TEL:805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com QUICK REFERENCE DATA AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE STANDARD RECOVERY RECTIFIER DIODE • • Low reverse currents
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300mA,
SM100
300mA
55M7S
diode sm40
diode sm50
25mA 10KV DIODE
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C80-004
Abstract: 50h7 IE35 C80 004 C80004 ERC80-004
Text: ERC80-004I5A * ± / j : Outline Drawings SCHOTTKY BARRIER DIODE : Features • ffiVp Low VF m nm &m Connection Diagram Super high speed switching. • 7 1 ,- i— «W = High reliability by planer d esig n . I Applications High speed power switching. Maximum Ratings and Characteristics
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ERC80-004
TQ-220AB
SC-46
500ns
C80-004
50h7
IE35
C80 004
C80004
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HFE4023
Abstract: No abstract text available
Text: Application Note Long-Term Power Output Reliability of Cap Rock SEC589 LED Chip ABSTRACT Honeywell Optoelectronics is conducting an ongoing study of degradation of radiant output over time as a function of temperature and current for the SEC589 "CAP ROCK” fiber optic, light emitting diode (LED) chip. This
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SEC589)
SEC589
SEC589
MIL-Q-9858
HFE4023
HLC3001
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ERC80-004
Abstract: A365
Text: ERC80-004 5A '> 3 SCHOTTKY BARRIER DIODE ’ Features • I&V f Low VF mmm&m Super high speed switching. Connection Diagram High reliability by planer design. l^ • E lS s I Applications (D High speed power switching. M a xim u m Ratings and Characteristics
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ERC80-004
SC-46
500ns
A365
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WU12
Abstract: ERC80-004
Text: ERC80-004 5A '> 3 SCHOTTKY BARRIER DIODE ’ Features • I&V f Low VF mmm&m Super high speed switching. Connection Diagram High reliability by planer design. l^ • E lS s I Applications (D High speed power switching. M a xim u m Ratings and Characteristics
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ERC80-004
SC-46
500ns
WU12
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Untitled
Abstract: No abstract text available
Text: ERC80-004 5A SC H OTT KY BARRIER DIODE : Features • teV F Low VF • *> f Super high speed switching. Connection D iagram High reliability by planer design. • f f l i S * : A pplications (D High speed power switching. M a xim u m Ratings and Characteristics
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ERC80-004
500ns
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marking 2U 77 diode
Abstract: marking DIODE 2U 04 marking code IAM 12CT ERC84-009 diode marking code 7-7-7-7 marking 2U diode marking DIODE 2U
Text: ERC84-009I3A K • fl- B '+ ii : Outline Drawings SCHOTTKY BARRIER DIODE Features • 1&VF Low VF W$z7j\ : Marking Ä 7 “- 3 - K : f f Color code : Blue Super high speed switching. • 7 V - * - f t « C J&ftflH Ktt High reliability by planer design. Abridged type nam e'"'" Î 1
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ERC84-009
marking 2U 77 diode
marking DIODE 2U 04
marking code IAM
12CT
diode marking code 7-7-7-7
marking 2U diode
marking DIODE 2U
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Untitled
Abstract: No abstract text available
Text: MIL-S-19$ÛO/35>2 EL AMENDMENT 1 10 September 1971 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON TYPE 1N831A Page 3 Paragraph h*3«1* , T est co n d itio n s, change "P»5«0 raw” to read: "PO .i? ttw11 Custodian: Arrny-KT. Preparing a c t i v i t y :
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MIL-S-1950O/35
5961-A36U
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