DIN 16901
Abstract: DIN ISO 2768-M DIN 16901 130 DIN 16901 140 FS450R12KE3 DIN 16901 150 5B4A
Text: Technische Information / technical information FS450R12KE3 IGBT-Module IGBT-modules - EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter
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FS450R12KE3
DIN 16901
DIN ISO 2768-M
DIN 16901 130
DIN 16901 140
FS450R12KE3
DIN 16901 150
5B4A
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PDF
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fs450r12ke3
Abstract: DIN 16901 130 P4E7
Text: Technische Information / technical information FS450R12KE3 IGBT-Module IGBT-modules - EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter
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FS450R12KE3
fs450r12ke3
DIN 16901 130
P4E7
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FF1400R12IP4 PrimePACK 3 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
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FF1400R12IP4
367C4326BC
97F6F8
36F1322
A2CB36
1231423567896AB
4112CD3567896EF
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PDF
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information FF900R12IP4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
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FF900R12IP4
367C4326BC
97F6F8
36F1322
A2CB36
1231423567896AB
4112CD3567896EF
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PDF
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LTC4098-3.6
Abstract: No abstract text available
Text: Technische Information / technical information FF600R12IP4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
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FF600R12IP4
367C4326BC
97F6F8
36F1322
A2CB36
1231423567896AB
4112CD3567896EF
LTC4098-3.6
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PDF
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LTC4098-3.6
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FF900R12IP4D PrimePACK 2 Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4, increased Emitter Controlled 4 diode and NTC
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FF900R12IP4D
366C4326BC
86F6F8
36F1322
A2CB36
5C336C
1231423567896AB
4112CD3567896EF
LTC4098-3.6
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PDF
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Q62702-A3466
Abstract: marking CODE JTS
Text: BAS 28W Silicon Switching Diode Array 3 • For high-speed switching applications 4 • Electrical insulated diodes 2 1 VPS05605 Type Marking Ordering Code Pin Configuration BAS 28W JTs 1 = C1 2 = C2 3 = A2 4 = A1 SOT-343 Q62702-A3466 Package Maximum Ratings
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VPS05605
OT-343
Q62702-A3466
Mar-16-1998
EHB00037
EHB00034
Q62702-A3466
marking CODE JTS
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Q62702-A3471
Abstract: SCT-595
Text: BAW 78M Silicon Switching Diode Preliminary data 4 • Switching applications • High breakdown voltage 5 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration BAW 78M GDs Q62702-A3471 Package 1 = A 2 = C 3 n.c. 4 n.c. 5 = C SCT-595 Maximum Ratings
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VPW05980
Q62702-A3471
SCT-595
sold05
Jul-27-1998
EHB00047
EHB00048
Q62702-A3471
SCT-595
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Untitled
Abstract: No abstract text available
Text: Connection Diagram 1401A 1403A 3 3 3 3 A29 1 2 1 1 2 1404A 2NC 2 1 3 3 1405A MARKING SOT-23 MMBD1401A A29 MMBD1404A A33 MMBD1403A A32 MMBD1405A A34 2 1 1 2 High Voltage General Purpose Diode Sourced from Process 2V. Absolute Maximum Ratings * TA = 25°C unless otherwise noted
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OT-23
MMBD1401A
MMBD1404A
MMBD1403A
MMBD1405A
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1403A
Abstract: DIODE A34 1404a transistor 1403A MMBD1401A MMBD1403A MMBD1404A MMBD1405A FAIRCHILD DIODE
Text: Connection Diagram 1401A 1403A 3 3 3 3 A29 1 2NC 2 1 1 2 1404A 2 1 3 3 1405A MARKING SOT-23 MMBD1401A A29 MMBD1404A A33 MMBD1403A A32 MMBD1405A A34 2 1 1 2 High Voltage General Purpose Diode Sourced from Process 2V. Absolute Maximum Ratings * TA = 25°C unless otherwise noted
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OT-23
MMBD1401A
MMBD1404A
MMBD1403A
MMBD1405A
1403A
DIODE A34
1404a
transistor 1403A
FAIRCHILD DIODE
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1403A
Abstract: sot23-3 wa 1405A MMBD1401A a32 sot23-3 DIODE A34 wa sot23-3 R017 MMBD1403A MMBD1404A
Text: CONNECTION DIAGRAMS 3 3 1401A 1403A A29 3 2 NC 1 1 2 1 2 3 3 1404A 2 SOT-23 3 MARKING MMBD1401A A29 MMBD1404A A33 MMBD1403A A32 MMBD1405A A34 1 1405A 1 2 1 2 High Voltage General Purpose Diode Sourced from Process 2V. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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OT-23
MMBD1401A
MMBD1404A
MMBD1403A
MMBD1405A
1403A
sot23-3 wa
1405A
a32 sot23-3
DIODE A34
wa sot23-3
R017
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MBRA340T3-D
Abstract: 403D MBRA340T3 MBRA340T3G DIODE A34
Text: MBRA340T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA340T3
MBRA340T3/D
MBRA340T3-D
403D
MBRA340T3
MBRA340T3G
DIODE A34
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DIODE A34
Abstract: 403D MBRA340T3 MBRA340T3G A34 Schottky
Text: MBRA340T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRA340T3
DIODE A34
403D
MBRA340T3
MBRA340T3G
A34 Schottky
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w6555
Abstract: DIODE A34 DIODE marking code A34
Text: MBRA340T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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Original
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MBRA340T3
MBRA340T3/D
w6555
DIODE A34
DIODE marking code A34
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PDF
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DIODE A34
Abstract: 403D MBRA340T3 MBRA340T3G
Text: MBRA340T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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Original
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MBRA340T3
MBRA340T3/D
DIODE A34
403D
MBRA340T3
MBRA340T3G
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PDF
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DIODE marking code A34
Abstract: DIODE A34 on marking A34 code
Text: MBRA340T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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Original
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MBRA340T3
MBRA340T3/D
DIODE marking code A34
DIODE A34
on marking A34 code
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PDF
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DIODE A34
Abstract: No abstract text available
Text: MBRA340T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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Original
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MBRA340T3
MBRA340T3
DIODE A34
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAS 28W Silicon Switching Diode Array For high-speed switching applications Electrical insulated diodes Type Marking Ordering Code Pin Configuration BAS 28W JTs 1 =C1 2 = C2 3 = A2 4 = A1 SOT-343 Q62702-A3466 Package Maximum Ratings Symbol Diode reverse voltage
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OCR Scan
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Q62702-A3466
OT-343
EHN00019
100ns,
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAW 78M Silicon Switching Diode Preliminary data • Switching applications • High breakdown voltage Type Marking Ordering Code Pin Configuration BAW 78M GDs Q62702-A3471 1=A 2 =C 3 n.c. Package 4 n.c. 5 = C SCT-595 Maximum Ratings Parameter Symbol
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OCR Scan
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Q62702-A3471
SCT-595
100ns,
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PDF
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Untitled
Abstract: No abstract text available
Text: BAW 101 Silicon Switching Diode Array • Electrically isolated high-voltage medium-speed diodes Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape Package BAW 101 JP Q62702-A3444 Q62702-A71* SOT 143 Maximum ratings Parameter
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OCR Scan
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Q62702-A3444
Q62702-A71*
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAW 78M Silicon Switching Diode Preliminary data • Switching applications • High breakdown voltage Type Marking Ordering Code Pin Configuration BAW 78M GDs Q62702-A3471 1=A 2=C 3 n.c. Package 4 n.c. 5=C SCT-595 Maximum Ratings Parameter Symbol
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OCR Scan
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Q62702-A3471
SCT-595
100ns,
EHB00048
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAS 28W Silicon Switching Diode Array • For high-speed switching applications • Electrical insulated diodes Ordering Code Pin Configuration BAS 28W JTs Q62702-A3466 1 =C1 CM O Marking II CM Type Package 3 = A2 4 = A1 SOT-343 Maximum Ratings Parameter
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OCR Scan
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Q62702-A3466
OT-343
100ns,
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PDF
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Untitled
Abstract: No abstract text available
Text: 32E D • 023^350 OQlbSbl ö « S I P Silicon Switching Diode Array B A W 101 S I E M E N S / SPCL-, S E M I C O N D S _ • Electrically Isolated high-voltage medlum-speed diodes Type Marking BAW 101 JP Ordering code for versions In bulk Q62702-A3444
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OCR Scan
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Q62702-A3444
Q62702-A712
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PDF
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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OCR Scan
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PDF
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