PA2680T1E
Abstract: G17661EJ2V0DS00
Text: DATA SHEET MOSFET WITH SCHOTTKY BARRIER DIODE PA2680T1E N-CHANNEL MOSFET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PIN CONNECTION Top View DESCRIPTION The μ PA2680T1E is a switching device, which can be driven directly by a 4.5 V power source. 6 5 4
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PA2680T1E
PA2680T1E
G17661EJ2V0DS00
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PA2680T1E
Abstract: A4460
Text: DATA SHEET MOSFET WITH SCHOTTKY BARRIER DIODE PA2680T1E N-CHANNEL MOSFET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PIN CONNECTION Top View DESCRIPTION The μ PA2680T1E is a switching device, which can be driven directly by a 4.5 V power source. 6 5 4
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PA2680T1E
PA2680T1E
A4460
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A26 diode
Abstract: diode A26
Text: Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 4709 N 20.28 N Elektrische Eigenschaften / Electrical properties Vorläufige Daten Höchstzulässige Werte / Maximum rated values Preliminary Data Periodische Spitzensperrspannung
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A26 diode
Abstract: 4709N 4709 KE-01
Text: Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 4709 N 20.28 N Elektrische Eigenschaften / Electrical properties Vorläufige Daten Höchstzulässige Werte / Maximum rated values Preliminary Data Periodische Spitzensperrspannung
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A26/00
A26 diode
4709N
4709
KE-01
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4709
Abstract: KE-01 8000D
Text: Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 4709 N 20.28 N Elektrische Eigenschaften / Electrical properties Vorläufige Daten Höchstzulässige Werte / Maximum rated values Preliminary Data Periodische Spitzensperrspannung
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A26 diode
Abstract: 4709N
Text: Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 4709 N 20.28 N Elektrische Eigenschaften / Electrical properties Vorläufige Daten Höchstzulässige Werte / Maximum rated values Preliminary Data Periodische Spitzensperrspannung
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A26 diode
Abstract: SD-50 Rectifier Diode
Text: Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 4709 N 20.28 N Elektrische Eigenschaften / Electrical properties Vorläufige Daten Höchstzulässige Werte / Maximum rated values Preliminary Data Periodische Spitzensperrspannung
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A26/00
A26/00
A26 diode
SD-50 Rectifier Diode
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DTM180AA
Abstract: DT-408 STD8018A LP05018 LS1012 DTM180AB
Text: ZERO-BIAS SCHOTTKY DIODE DETECTORS 100 KHz - 50 GHz FEATURES • No Bias Required • Matched Input for Excellent VSWR* • Extremely Flat Frequency Response* • Very High Sensitivity DZ Series * (DZR & DZM Series) APPLICATIONS ENVIRONMENTAL RATINGS
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200mW
100mW
DTM180AA
DT-408
STD8018A
LP05018
LS1012
DTM180AB
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IDTQS34XVH245
Abstract: QS34XVH245
Text: IDTQS34XVH245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH245 PRELIMINARY DESCRIPTION: • N channel FET switches with no parasitic diode to VCC
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IDTQS34XVH245
32-BIT
500MHz
10MHz;
80-Pin
34XVH245
IDTQS34XVH245
QS34XVH245
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diode A26C
Abstract: schottky barrier type rectifier 30v 3a EP05Q04 xl marking sod-123 i50112
Text: SILICON RECTIFIER DIODE EClODSl EClODS2 EClODS4 EClODS6 lA/lOO-600V FEATURES Surface Mount Device 0 Miniature Size, thigh Surge Capability OLOW Forward Voltage Drop OLOW Reverse Leakage Current ~Packagedin 12mm Tape and Reel oNot Rolling During Assembly Dimensions
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lA/lOO-600V
EC15QS03
EC15QS04
diode A26C
schottky barrier type rectifier 30v 3a
EP05Q04
xl marking sod-123
i50112
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IDTQS34XVH2245
Abstract: QS34XVH2245 B12 nec diode
Text: IDTQS34XVH2245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH2245 PRELIMINARY DESCRIPTION: • N channel FET switches with no parasitic diode to VCC
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IDTQS34XVH2245
32-BIT
10MHz;
80-Pin
34XVH2245
IDTQS34XVH2245
QS34XVH2245
B12 nec diode
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diode A23
Abstract: QS3245 QS34X2245 QS34X245
Text: QS34X245, QS34X2245 QuickSwitch Products High-Speed CMOS QuickSwitch 32-Bit MultiWidthTM Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS34X245 QS34X2245 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • Bidirectional switches connect inputs
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QS34X245,
QS34X2245
32-Bit
QS34X245
QS34X245
QS3245
QS34X2245
80-pin
diode A23
QS3245
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12v and 5v regulated power supply circuit diagram
Abstract: VJ0805Y104JXA schematic power supply circuit diagram using ic POWER MOSFET CIRCUIT LMV321M5 1N5819M 929834-02-36-ND 20a power supply AN820 LMV321
Text: SiDB766761 Vishay Siliconix Temperature Sensing MOSFET Evaluation Board FEATURES Turns Off MOSFET Before TJ Exceeds 175_C Rating 5-V Logic Level Operation of Control Circuit 12-V Battery Level Operation of Power MOSFET Circuit Sense Diode Bias Current, IF = 250 mA
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SiDB766761
SUB60N04-15LT,
SUB60N04-15LT
LM2937IMP-5
OT-223
LMV321M5,
SC70-5
929834-02-36-ND
12v and 5v regulated power supply circuit diagram
VJ0805Y104JXA
schematic power supply circuit diagram using ic
POWER MOSFET CIRCUIT
LMV321M5
1N5819M
929834-02-36-ND
20a power supply
AN820
LMV321
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calculation of IGBT snubber
Abstract: silicon thermal grease single phase igbt based inverter 200 amps circuit CM100DY-24H darlington pair MODULE 200A powerex snubber capacitor IGBT snubber shinetsu G746 PM600HSA120 IGBT JUNCTION TEMPERATURE CALCULATION
Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 3.0 General Considerations for IGBT and Intelligent Power Modules Powerex IGBT and Intelligent Power Modules are based on advanced low loss IGBT and free-wheel diode technologies. The general
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00V/100A
calculation of IGBT snubber
silicon thermal grease
single phase igbt based inverter 200 amps circuit
CM100DY-24H
darlington pair MODULE 200A
powerex snubber capacitor
IGBT snubber
shinetsu G746
PM600HSA120
IGBT JUNCTION TEMPERATURE CALCULATION
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Power DIODE A30
Abstract: QS34XR245 b12 diode DIODE B12 41 QS34XR245Q3 QS3R245
Text: QS34XR245 QuickSwitch Products High-Speed CMOS QuickSwitch 32-Bit Low Resistance MultiWidthTM Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS34XR245 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 2.5Ω bidirectional switches connect inputs
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QS34XR245
32-Bit
QS34XR245Q3
QS3R245
80-pin
QS34XR245
MDSL-00253-02
Power DIODE A30
b12 diode
DIODE B12 41
QS3R245
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diode A26
Abstract: oen relay 8 pin
Text: IDTQS34XVH2245 3.3V 32-BIT BUS SWITCH FOR HOT SWAP APPLICATIONS INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 3.3V 32-BIT BUS SWITCH FOR HOT SWAP APPLICATIONS HOTSWITCH FEATURES: IDTQS34XVH2245 DESCRIPTION: • N channel FET switches with no parasitic diode to VCC
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IDTQS34XVH2245
32-BIT
IDTQS34XVH2245
150MHz
QS32XVH
80-Pin
diode A26
oen relay 8 pin
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Untitled
Abstract: No abstract text available
Text: IDTQS34XVH245 3.3V 32-BIT BUS SWITCH FOR HOT SWAP APPLICATIONS INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 3.3V 32-BIT BUS SWITCH FOR HOT SWAP APPLICATIONS HOTSWITCH FEATURES: IDTQS34XVH245 DESCRIPTION: • N channel FET switches with no parasitic diode to VCC
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IDTQS34XVH245
32-BIT
IDTQS34XVH245
500MHz
QS34VHXXX
80-Pin
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Untitled
Abstract: No abstract text available
Text: IDTQS34XVH2245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH2245 DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions
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IDTQS34XVH2245
32-BIT
IDTQS34XVH2245
80-Pin
34XVH2245
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Untitled
Abstract: No abstract text available
Text: IDTQS34XVH2245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH IDTQS34XVH2245 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions
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IDTQS34XVH2245
32-BIT
80-Pin
34XVH2245
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IDTQS34XVH245
Abstract: QS34XVH245 B1065
Text: IDTQS34XVH245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH IDTQS34XVH245 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions
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IDTQS34XVH245
32-BIT
500MHz
10MHz;
34XVH245
IDTQS34XVH245
QS34XVH245
B1065
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Untitled
Abstract: No abstract text available
Text: IDTQS34XVH245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH245 DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions
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IDTQS34XVH245
32-BIT
IDTQS34XVH245
500MHz
80-Pin
34XVH245
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B29B
Abstract: IDTQS34XVH245 QS34XVH245
Text: IDTQS34XVH245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH IDTQS34XVH245 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions
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IDTQS34XVH245
32-BIT
500MHz
10MHz;
B29B
IDTQS34XVH245
QS34XVH245
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Untitled
Abstract: No abstract text available
Text: IDTQS34XVH245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH245 DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions
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IDTQS34XVH245
32-BIT
500MHz
10MHz;
80-Pin
34XVH245
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Untitled
Abstract: No abstract text available
Text: QuickSwitch Products High-Speed CMOS qs34X245 qs 34x2245 QuickSwitch 32-Bit Multi Width Bus Switches Semiconductor, I nc. FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • Bidirectional switches connect inputs
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qs34X245
34x2245
32-Bit
QS34X2245
DSL-00254-00
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