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    DIODE A123 Search Results

    DIODE A123 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE A123 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Q62702-A1239

    Abstract: No abstract text available
    Text: BAS 16-02W Silicon Switching Diode Preliminary data • For high-speed switching applications 2 1 VES05991 Type Marking Ordering Code Pin Configuration Package BAS 16-02W 3 Q62702-A1239 1=A SCD-80 2=C Maximum Ratings Parameter Symbol Diode reverse voltage


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    6-02W VES05991 Q62702-A1239 SCD-80 Jul-24-1998 EHB00023 Q62702-A1239 PDF

    a1231

    Abstract: Q62702-A1231
    Text: BAS 16-03W Silicon Switching Diode Preliminary data • For high-speed switching applications 2 1 VPS05176 Type Marking Ordering Code Pin Configuration Package BAS 16-03W B Q62702-A1231 1=A SOD-323 2=C Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage


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    6-03W VPS05176 Q62702-A1231 OD-323 EHB00023 EHB00024 Mar-13-1998 EHB00025 a1231 Q62702-A1231 PDF

    Untitled

    Abstract: No abstract text available
    Text: HL-PC-2012H191W-B76 Description Features z2.0mmx1.25mm zLOW SMT LED, 0.68mm THICKNESS. zIDEAL The White source color devices are made with DH InGaN on GaAs substrate Light Emitting Diode. POWER CONSUMPTION. zWIDE WHITE VIEWING ANGLE. FOR BACKLIGHT AND INDICATOR.


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    HL-PC-2012H191W-B76 3000PCS A1236 MAR/03/2006 PDF

    varactor diode fm

    Abstract: A1230 a1230 sanyo varactor diode data sheet 470M
    Text: SVC720 Ordering number : ENA1230 SANYO Semiconductors DATA SHEET SVC720 Silicon Diffused Junction Type Varactor Diode FM Receiver Electronic Tuning Applications Features • • • • • Twin type with a good linearity of C-V characteristic. Excels in large input characteristic.


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    SVC720 ENA1230 SVC720-applied A1230-4/4 varactor diode fm A1230 a1230 sanyo varactor diode data sheet 470M PDF

    Untitled

    Abstract: No abstract text available
    Text: HL-A-3528U6YC-W YELLOW Features Description ●SINGLE COLOR. The Yellow source color devices are made with Gallium ● SUITABLE FOR ALL SMT ASSEMBLY AND SOLDER Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode. PROCESS. ● AVAILABLE ON TAPE AND REEL.


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    HL-A-3528U6YC-W 2000PCS A1233 FEB/28/2006 22Pcs. 1000Hrs. PDF

    diode A123

    Abstract: No abstract text available
    Text: 2 G-1 J10 1 2 3 1 2 3 4 C4 1 2 GND 100n 3 GND MFNS1902 T11 25 R15 GND J42 J22 R16 CR C1 V5 GND 100n C11 DIODE D11 T21 MFNS1902 LED2 25 R25 GND J43 J23 R26 CG TXD RXD RTS# CTS# DTR# DSR# DCD# RI# 2 23 22 13 14 12 1 5 3 11 2 9 10 6 GND MFNS1902 T31 25 R35 J44


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    MFNS1902 CAT4238 DOGL128 W128-6X8/6X9 TMGG13264 diode A123 PDF

    4 pin hall effect AC CURRENT

    Abstract: A1230 A3425 A3425EK-T A3425LK-T A3425LLTR-T IPC7351 SOIC127P600X175-8M
    Text: A3425 Ultra-Sensitive Dual-Channel Quadrature Hall-Effect Bipolar Switch This device is in production, however, a currently available next generation replacement part is available. Recommended Substitutions: For existing customer transition, and for new customers or new applications, refer to the A1230.


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    A3425 A1230. 4 pin hall effect AC CURRENT A1230 A3425 A3425EK-T A3425LK-T A3425LLTR-T IPC7351 SOIC127P600X175-8M PDF

    Untitled

    Abstract: No abstract text available
    Text: A1230 Ultra-Sensitive Dual-Channel Quadrature Hall-Effect Bipolar Switch Features and Benefits Description Two matched Hall effect switches on a single substrate 1 mm Hall element spacing Superior temperature stability and industry-leading jitter performance through use of advanced chopperstabilization topology


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    A1230 A1230 PDF

    A1230

    Abstract: No abstract text available
    Text: A1230 Ultra-Sensitive Dual-Channel Quadrature Hall-Effect Bipolar Switch Features and Benefits Description ▪ Two matched Hall effect switches on a single substrate ▪ 1 mm Hall element spacing ▪ Superior temperature stability and industry-leading jitter performance through use of advanced chopperstabilization topology


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    A1230 PDF

    A1230

    Abstract: A1230LK-T SOIC127P600X allegro 80 L
    Text: A1230 Ultra-Sensitive Dual-Channel Quadrature Hall-Effect Bipolar Switch Features and Benefits Description ▪ Two matched Hall effect switches on a single substrate ▪ 1 mm Hall element spacing ▪ Superior temperature stability and industry-leading jitter performance through use of advanced chopperstabilization topology


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    A1230 A1230LK-T SOIC127P600X allegro 80 L PDF

    A1230

    Abstract: A-1230 IPC7351 SOIC127P600X175-8M A1230LK-T
    Text: A1230 Ultra-Sensitive Dual-Channel Quadrature Hall-Effect Bipolar Switch Features and Benefits Description ▪ Two matched Hall effect switches on a single substrate ▪ 1 mm Hall element spacing ▪ Superior temperature stability and industry-leading jitter performance through use of advanced chopperstabilization topology


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    A1230 A1230 A-1230 IPC7351 SOIC127P600X175-8M A1230LK-T PDF

    A1230

    Abstract: IPC7351 SOIC127P600X175-8M BURR
    Text: A1230 Ultra-Sensitive Dual-Channel Quadrature Hall-Effect Bipolar Switch Features and Benefits Description ▪ Two matched Hall effect switches on a single substrate ▪ 1 mm Hall element spacing ▪ Superior temperature stability and industry-leading jitter performance through use of advanced chopperstabilization topology


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    A1230 A1230 IPC7351 SOIC127P600X175-8M BURR PDF

    A1230LLTR-T

    Abstract: A1230 2A1230
    Text: A1230 Ultra-Sensitive Dual-Channel Quadrature Hall-Effect Bipolar Switch Features and Benefits Description ▪ Two matched Hall effect switches on a single substrate ▪ 1 mm Hall element spacing ▪ Superior temperature stability and industry-leading jitter performance through use of advanced chopperstabilization topology


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    A1230 A1230LLTR-T 2A1230 PDF

    schematic diagram 12v to 48v dc buck boost conver

    Abstract: schematic diagram 110v dc charger ultrasonic transducers 48V laptop Lithium-ion battery diagram schematic 12V, 20A automatic charger schematic Sanyo supercapacitors ultrasonic transducers 50w 40 khz mobile battery charger circuit using 7805 LTC4009-2 nesscap active balancing circuit
    Text: LINEAR TECHNOLOGY SEPTEMBER 2008 IN THIS ISSUE… COVER ARTICLE Replace Batteries in Power RideThrough Applications with Robust Supercaps and 3mm x 3mm Capacitor Charger .1 Jim Drew Linear in the News… .2


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    20mm2 1-800-4-LINEAR schematic diagram 12v to 48v dc buck boost conver schematic diagram 110v dc charger ultrasonic transducers 48V laptop Lithium-ion battery diagram schematic 12V, 20A automatic charger schematic Sanyo supercapacitors ultrasonic transducers 50w 40 khz mobile battery charger circuit using 7805 LTC4009-2 nesscap active balancing circuit PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BAS 16-03W Silicon Switching Diode Preliminary data • For high-speed switching applications Type Marking Ordering Code Pin Configuration Package BAS 16-03W B Q62702-A1231 1=A SOD-323 2=C Maximum Ratings Symbol Parameter Value 75 Diode reverse voltage


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    6-03W Q62702-A1231 OD-323 100ns, PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BAS 16-03W Silicon Switching Diode Preliminary data • For high-speed switching applications Type Marking Ordering Code Pin Configuration Package BAS 16-03W B Q62702-A1231 1=A SOD-323 2=C Maximum Ratings Parameter Symbol Diode reverse voltage Vr 75


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    6-03W Q62702-A1231 OD-323 100ns, PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BAS 16-02W Silicon Switching Diode Preliminary data • For high-speed switching applications Type Marking Ordering Code Pin Configuration Package BAS 16-02W 3 Q62702-A1239 1=A SCD-80 2=C Maximum Ratings Parameter Symbol Diode reverse voltage Vr 75


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    6-02W Q62702-A1239 SCD-80 100//A EHN00016 100ns, PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BAS 16-02W Silicon Sw itching Diode Prelim inary data • For high-speed switching applications Type Marking Ordering Code Pin Configuration Package BAS 16-02W 3 Q 62702-A1239 1=A SCD-80 2 =C Maxim um Ratings Param eter Sym bol Diode reverse voltage


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    6-02W 62702-A1239 SCD-80 100ns, PDF

    DSAIH0002544

    Abstract: A123
    Text: D3E D I B K C INTERNATIONAL 117^03 QDDGOS3 fi |~~ Type No. A A123 GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 Telephone 617 681-0392 Tele Fax (617) 681-9135 Telex 928377 FEATURES Low fo rw ard vo ltag e dro p — lowpowerconsumption


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    MIL-S-19500, DSAIH0002544 A123 PDF

    IFR-GDC40PW

    Abstract: No abstract text available
    Text: CONTENTS • LED INDICATOR LAMPS 5 • MINI TYPE LED LAMPS 11 • SPECIAL TYPE LED LAMPS 11 • TWO-COLOR LED LAMPS 13 • BLINKING LED LAMPS 13 •LIG H T BAR LED 13 . ULTRA-BRIGHT LED LAMPS 13 • LED NUMBERIC DISPLAY 15 . DOT MATRIX LED DISPLAY 19 • INFRARED EMITTING DIODE


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: D IO D E M O D U L E DF200BA40/80 UL;E76102 M Power Diode Module D F 2 0 0 B A is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electri­ cally isolated from semiconductor elements for simple heatsink


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    DF200BA40/80 E76102 200Amp DF200BA40 DF200BA80 ni243 F200BA 000208b PDF

    Untitled

    Abstract: No abstract text available
    Text: _ S-8430AF STEP UP & DOWN VOLTAGE REGULATOR T h e S -8 4 3 0 A F is a c h o p p e r-ty p e D C /D C c o n v e rte r d e v e lo p e d b y using th e C M O S p ro c e s s . It a u to m a tic a lly s te p s th e v o lta g e up an d d o w n a c c o rd in g to th e input v o lta g e .


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    S-8430AF yp100 PDF

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


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    HRMA-0470B

    Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
    Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic


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    E-28230 S-164 CH-8902 HRMA-0470B Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61 PDF