Untitled
Abstract: No abstract text available
Text: PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-95321
IRGIB6B60KDPbF
O-220
O-220
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C-150
Abstract: No abstract text available
Text: PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-95321
IRGIB6B60KDPbF
O-220
O-220
C-150
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VCC400V
Abstract: C-150
Text: PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-95321
IRGIB6B60KDPbF
O-220
O-220
VCC400V
C-150
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9534 diode
Abstract: SVC203SPA
Text: Ordering number :EN953C SVC203SPA Diffused Junction Type Sillicon Diode Varactor Diode IOCAP for FM Receiver Electronic Tuning Features Package Dimensions • The SVC203SPA is a varactor diode of dual type with a good linearity of C-V characteristic. It excels
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EN953C
SVC203SPA
SVC203SPA
SVC203SPA]
9534 diode
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SVC203SPA
Abstract: 4013KI 9534 diode EN953C
Text: Ordering number :EN953C SVC203SPA Diffused Junction Type Silicon Diode Varactor Diode IOCAP for FM Receiver Electronic Tuning Features Package Dimensions • The SVC203SPA is a varactor diode of dual type with a good linearity of C-V characteristic. It excels
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EN953C
SVC203SPA
SVC203SPA
SVC203SPA]
4013KI
9534 diode
EN953C
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035H
Abstract: IRFPE30 transistor IC 12A 400v diode Marking code WT
Text: PD - 95327 IRG4PC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter
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IRG4PC30UDPbF
O-247AC
IRFPE30
035H
IRFPE30
transistor IC 12A 400v
diode Marking code WT
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transistor VCE 1000V
Abstract: TO-247AC Package 12A H3 irf 150 equivalent 035H IRFPE30
Text: PD - 95327 IRG4PC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter
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IRG4PC30UDPbF
O-247AC
IRFPE30
transistor VCE 1000V
TO-247AC Package
12A H3
irf 150 equivalent
035H
IRFPE30
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power rectifier diode 400v 40a
Abstract: EIA-541 IRFR120
Text: PD - 95328 IRG4RC10UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode . Generation 4 IGBT design provides tighter
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IRG4RC10UDPbF
O-252AA
140ns
EIA-481
EIA-541.
EIA-481.
power rectifier diode 400v 40a
EIA-541
IRFR120
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EIA-541
Abstract: IRFR120
Text: PD - 95328 IRG4RC10UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode . Generation 4 IGBT design provides tighter
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IRG4RC10UDPbF
O-252AA
140ns
O-252AA)
EIA-481
EIA-541.
EIA-481.
EIA-541
IRFR120
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035H
Abstract: IRFPE30
Text: PD - 95327 IRG4PC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter
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IRG4PC30UDPbF
O-247AC
IRFPE30
035H
IRFPE30
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Diode P 619
Abstract: EIA-541 IRFR120 IRFU120 U120 marking code diode 14
Text: PD - 95324A IRFR9110PbF IRFU9110PbF • Lead-Free www.irf.com 1 12/14/04 IRFR/U9110PbF 2 www.irf.com IRFR/U9110PbF www.irf.com 3 IRFR/U9110PbF 4 www.irf.com IRFR/U9110PbF www.irf.com 5 IRFR/U9110PbF 6 www.irf.com IRFR/U9110PbF Peak Diode Recovery dv/dt Test Circuit
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5324A
IRFR9110PbF
IRFU9110PbF
IRFR/U9110PbF
ISD10PbF
Diode P 619
EIA-541
IRFR120
IRFU120
U120
marking code diode 14
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Untitled
Abstract: No abstract text available
Text: SMPS IGBT PD - 95329 IRGP35B60PDPbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 1.85V @ VGE = 15V IC = 22A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies
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IRGP35B60PDPbF
IRFPE30
O-247AC
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035H
Abstract: 30ETH06 IRFP250 IRFPE30
Text: SMPS IGBT PD - 95329 IRGP35B60PDPbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 1.85V @ VGE = 15V IC = 22A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies
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IRGP35B60PDPbF
IRFPE30
O-247AC
035H
30ETH06
IRFP250
IRFPE30
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Untitled
Abstract: No abstract text available
Text: PD - 95328 IRG4RC10UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode . Generation 4 IGBT design provides tighter
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IRG4RC10UDPbF
O-252AA
140ns
EIA-481
EIA-541.
EIA-481.
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Untitled
Abstract: No abstract text available
Text: PD - 95327 IRG4PC30UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter
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IRG4PC30UDPbF
O-247AC
IRFPE30
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22a ic
Abstract: afaa 035H 30ETH06 IRFPE30 smps igbt 200A 600V FET
Text: SMPS IGBT PD - 95329 IRGP35B60PDPbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 1.85V @ VGE = 15V IC = 22A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies
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IRGP35B60PDPbF
O-247AC
IRFPE30
22a ic
afaa
035H
30ETH06
IRFPE30
smps igbt
200A 600V FET
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Untitled
Abstract: No abstract text available
Text: A Telecommunications Microwave MICROWAVE TECHNOLOGY TRAINING SYSTEM MODEL 8090 Complete Microwave Technology Training System, with hybrid tee and PIN diode, Model 8090-2 GENERAL DESCRIPTION The Microwave Technology Training System, Model 8090, is part of the Lab-Volt telecommunications
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Feature28113-00
28113-A0
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SC28L198
Abstract: SCC2691AC1A28 LCD 09151 CSOT109 PCA9552 PCK2002 PCF8591 APPLICATION pecl clock so8 PCA9550 PCA9553
Text: Interface Products Interface Products 67 I2C Logic Family Overview • Analog/Digital Converters It is frequency required to record analog information, such as temperature, pressure, battery level, signal strength, etc. The analog voltage information from the diode, pressure sensor,
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1KAB80E
Abstract: 1KAB100E 1KAB10E 1KAB20E 1KAB40E 1KAB60E B125C1000 B250C1000 B40C1000 B80C1000
Text: 1KAB-E Series Vishay High Power Products Single Phase Rectifier Bridge, 1.2 A FEATURES • Ease of assembly, installation, inventory RoHS • High surge rating COMPLIANT • Compact • RoHS compliant DESCRIPTION D-38 A 1.2 A diode bridge rectifier assembly designed for new
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18-Jul-08
1KAB80E
1KAB100E
1KAB10E
1KAB20E
1KAB40E
1KAB60E
B125C1000
B250C1000
B40C1000
B80C1000
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1KAB60E
Abstract: 1KAB80E B125C1000 B250C1000 B40C1000 B80C1000 1KAB100E 1KAB10E 1KAB20E 1KAB40E
Text: 1KAB-E Series Vishay High Power Products Single Phase Rectifier Bridge, 1.2 A FEATURES • Ease of assembly, installation, inventory RoHS • High surge rating COMPLIANT • Compact • RoHS compliant DESCRIPTION D-38 A 1.2 A diode bridge rectifier assembly designed for new
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11-Mar-11
1KAB60E
1KAB80E
B125C1000
B250C1000
B40C1000
B80C1000
1KAB100E
1KAB10E
1KAB20E
1KAB40E
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B500C1000
Abstract: 1KAB20 B80C1000 1kab60e 1KAB60 1kab40
Text: 1KAB-E Series Vishay High Power Products Single Phase Rectifier Bridge, 1.2 A FEATURES • Ease of assembly, installation, inventory RoHS • High surge rating COMPLIANT • Compact • RoHS compliant DESCRIPTION D-38 A 1.2 A diode bridge rectifier assembly designed for new
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1KAB10E
1KAB20E
1KAB40E
1KAB60E
1KAB80E
1KAB100E
B40C1000
B80C1000
B125C1000trademarks
2011/65/EU
B500C1000
1KAB20
1KAB60
1kab40
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1KAB60
Abstract: 1kab20e
Text: 1KAB-E Series Vishay High Power Products Single Phase Rectifier Bridge, 1.2 A FEATURES • Ease of assembly, installation, inventory RoHS • High surge rating COMPLIANT • Compact • RoHS compliant DESCRIPTION D-38 A 1.2 A diode bridge rectifier assembly designed for new
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1KAB10E
1KAB20E
1KAB40E
1KAB60E
1KAB80E
1KAB100E
B40C1000
B80C1000
B125C1000hay
11-Mar-11
1KAB60
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10969
Abstract: T1078N T1258N T2509N T828N K53V 024w l 9147 p k0 4 50 2cv1
Text: M3.2C - Schaltung Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM,DRM ~ 60 Veff 35 V 200 V Satzstrom Id [A] Verlustl. P d Wasserm. v L Schaltung pro KB [W] [ltr/min] Diode D ~ ~ ~ ~ + Kühlblöcke für Wasserkühlung mit offener Isolation
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T828N
T1078N
T1258N
T2509N
T3659N*
10969
T1078N
T1258N
T2509N
T828N
K53V
024w
l 9147 p
k0 4 50
2cv1
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Untitled
Abstract: No abstract text available
Text: Ordering num ber: EN953C SVC203SPA N0.953C Diffused Ju n ctio n Type Silicon Diode Varactor Diode IOCAP for FM Low-V oltage Electronic T uning F e a tu re s • T he SVC203SPA is a v aracto r diode of dual type w ith a good lin e a rity of C-V ch a rac te ristic . It excels in
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EN953C
SVC203SPA
SVC203SPA
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