DIODE A46
Abstract: A47 diode skkh570 4092 thyristor skkt 90 A76A semipack skkh 106 SKKD380 A36 diode semipack skkt 330
Text: 1996-2012:QuarkCatalogTempNew 9/20/12 3:44 PM Page 1996 INTERCONNECT TEST & MEASUREMENT 25 SEMIPACK Isolated Diode/Diode and Thyristor/Diode Modules SEMIPACK® Isolated Diode/Diode and Single Diode Modules 27 Amp to 700 Amp RoHS SKKD 46/16 Stock No. Mfr.’s
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AN-994
Abstract: C-150 EIA-541 IRFR120
Text: PD - 95036 IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGR3B60KD2PbF
Contin18
EIA-481
EIA-541.
EIA-481.
AN-994
C-150
EIA-541
IRFR120
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Untitled
Abstract: No abstract text available
Text: PD - 95036 IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.
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IRGR3B60KD2PbF
EIA-481
EIA-541.
EIA-481.
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AN-994
Abstract: C-150 EIA-541 IRFR120 of transistor C 4212
Text: PD - 95036 IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGR3B60KD2PbF
EIA-481
EIA-541.
EIA-481.
AN-994
C-150
EIA-541
IRFR120
of transistor C 4212
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LTC4358
Abstract: LTC4252-2A LTC4358CFE MARKING TRANSISTOR BD RC marking g02 tssop FE16 n channel mosfet marking Bc B530C LTC4358C LTC4358CDE
Text: LTC4358 5A Ideal Diode FEATURES DESCRIPTION n The LTC 4358 is a 5A ideal diode that uses an internal 20mΩ N-channel MOSFET to replace a Schottky diode when used in diode-OR and high current diode applications. The LTC4358 reduces power consumption, heat
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LTC4358
LTC4358
14-Pin
16-Lead
LTC4355
LTC4357
LTC4223-1/LTC4223-2
4358fa
LTC4252-2A
LTC4358CFE
MARKING TRANSISTOR BD RC
marking g02 tssop
FE16
n channel mosfet marking Bc
B530C
LTC4358C
LTC4358CDE
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Untitled
Abstract: No abstract text available
Text: LTC4358 5A Ideal Diode FEATURES n n n n n n n DESCRIPTION The LTC 4358 is a 5A ideal diode that uses an internal 20mΩ N-channel MOSFET to replace a Schottky diode when used in diode-OR and high current diode applications. The LTC4358 reduces power consumption, heat
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LTC4358
LTC4358
14-Pin
16-Lead
LTC4355
LTC4357
LTC4223-1/LTC4223-2
4358fa
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Untitled
Abstract: No abstract text available
Text: TSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSMS3700 is a standard GaAs infrared emitting diode in a miniature PLCC-2 package. Its flat window provides a wide aperture, making it ideal for use with external optics. The diode is case compatible to the TEMT3700 phototransistor, allowing the user to assemble his own
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TSMS3700
TSMS3700
TEMT3700
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: TSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSMS3700 is a standard GaAs infrared emitting diode in a miniature PLCC-2 package. Its flat window provides a wide aperture, making it ideal for use with external optics. The diode is case compatible to the TEMT3700 phototransistor, allowing the user to assemble his own
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TSMS3700
TSMS3700
TEMT3700
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES DESCRIPTION n The LTC 4357 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. When used in diode-OR and high current diode applications, the LTC4357 reduces power consumption, heat dissipation, voltage loss and PC board area.
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LTC4357
10-Bit
4357fa
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TEMT3700
Abstract: TSMS3700 TSMS3700-GS08 TSMS3700-GS18
Text: TSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSMS3700 is a standard GaAs infrared emitting diode in a miniature PLCC-2 package. Its flat window provides a wide aperture, making it ideal for use with external optics. The diode is case compatible to the TEMT3700 phototransistor, allowing the user to assemble his own
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TSMS3700
TSMS3700
TEMT3700
D-74025
08-Mar-05
TSMS3700-GS08
TSMS3700-GS18
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Solar Charge Controller
Abstract: 48V 100W zener diode 14v 10A mosfet solar controller FDB3632 solar panel controller p channel mosfet 100v Solar Charge Controller Circuit SMAT70A solar panel 5v
Text: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES DESCRIPTION n The LTC 4357 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. When used in diode-OR and high current diode applications, the LTC4357 reduces power consumption, heat dissipation, voltage loss and PC board area.
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LTC4357
LTC4357
LTC4350
LT4351
LTC4354
LTC4355
4357fb
Solar Charge Controller
48V 100W zener diode
14v 10A mosfet
solar controller
FDB3632
solar panel controller
p channel mosfet 100v
Solar Charge Controller Circuit
SMAT70A
solar panel 5v
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Solar Charge Controller
Abstract: LTC4357H SMAT70A FDB3632 LTC4357 LTC4357HDCB MBR10100 LT16411 ORing fet 48v 5a SBR1V15DSA
Text: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES DESCRIPTION n The LTC 4357 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. When used in diode-OR and high current diode applications, the LTC4357 reduces power consumption, heat dissipation, voltage loss and PC board area.
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LTC4357
LTC4357
LTC4350
LTC4352
LTC4354
LTC4355
4357fc
Solar Charge Controller
LTC4357H
SMAT70A
FDB3632
LTC4357HDCB
MBR10100
LT16411
ORing fet 48v 5a
SBR1V15DSA
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Untitled
Abstract: No abstract text available
Text: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES DESCRIPTION n The LTC 4357 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. When used in diode-OR and high current diode applications, the LTC4357 reduces power consumption, heat dissipation, voltage loss and PC board area.
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LTC4357
4357fb
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Untitled
Abstract: No abstract text available
Text: Invisible optoelectronics device Infrared Diode Photo Diode Photo Transistor High power Infrared diode Formore,pleasevisithttp://www.betlux.com Infrared Emitters Part Number Φe （Mw Material BL-LS3528A0S1IRAC BL-LS3528A0S1IRAB BL-LS3528A0S1IRBC BL-LS3528A0S1IRBB
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BL-LS3528A0S1IRAC
BL-LS3528A0S1IRAB
BL-LS3528A0S1IRBC
BL-LS3528A0S1IRBB
BL-LS3528A0S1IRCC
BL-LS3528A0S1IRCB
BL-LS3528A0S1IRCY
BL-LS3528A0S1
BL-LS3528B1S3
BL-LS3528B1S3IRAC
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TSAL infrared
Abstract: No abstract text available
Text: TSAL5300 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL5300 is a high efficiency infrared emitting diode in GaAs technology, molded in clear, bluegrey tinted plastic packages. 96 11505 Features Applications •
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TSAL5300
TSAL5300
2000/53/EC,
2002/95/EC
2002/96/EC
D-74025
08-Mar-05
TSAL infrared
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TSAL infrared
Abstract: TSAL5300 TSAL5300-FSZ TSAL5300-GSZ
Text: TSAL5300 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL5300 is a high efficiency infrared emitting diode in GaAs technology, molded in clear, bluegrey tinted plastic packages. 96 11505 Features Applications •
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TSAL5300
TSAL5300
08-Apr-05
TSAL infrared
TSAL5300-FSZ
TSAL5300-GSZ
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TSAL infrared
Abstract: No abstract text available
Text: TSAL5300 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL5300 is a high efficiency infrared emitting diode in GaAs technology, molded in clear, bluegrey tinted plastic packages. 96 11505 Features Applications •
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TSAL5300
TSAL5300
2000/53/EC,
2002/95/EC
2002/96/EC
D-74025
08-Mar-05
TSAL infrared
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Untitled
Abstract: No abstract text available
Text: TSUS4400 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4400 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. The device is spectrally matched to silicon photodetectors.
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TSUS4400
TSUS4400
2002/95/EC
2002/96/EC
D-74025
08-Mar-05
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Untitled
Abstract: No abstract text available
Text: TSUS4400 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4400 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. The device is spectrally matched to silicon photodetectors.
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TSUS4400
TSUS4400
2002/95/EC
2002/96/EC
08-Apr-05
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TSUS4400
Abstract: No abstract text available
Text: TSUS4400 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4400 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. The device is spectrally matched to silicon photodetectors.
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TSUS4400
TSUS4400
2002/95/EC
2002/96/EC
08-Apr-05
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T2N3904
Abstract: No abstract text available
Text: LM95221 LM95221 Dual Remote Diode Digital Temperature Sensor with SMBus Interface Literature Number: SNIS134A LM95221 Dual Remote Diode Digital Temperature Sensor with SMBus Interface General Description The LM95221 is a dual remote diode temperature sensor in
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LM95221
LM95221
SNIS134A
MMBT3904
T2N3904
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TSAL6100
Abstract: fire detector Diode Optical Smoke DEtector S8867 TSAL6100X01
Text: TSAL6100X01 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6100X01 is a high efficiency infrared emitting diode in GaAlAs/GaAs technology, molded in clear, bluegrey tinted plastic packages. TSAL6100X01 is released to Smoke-automatic Fire
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TSAL6100X01
TSAL6100X01
S8867,
D-74025
18-Jul-05
TSAL6100
fire detector
Diode Optical Smoke DEtector
S8867
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Untitled
Abstract: No abstract text available
Text: TSAL6100X01 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6100X01 is a high efficiency infrared emitting diode in GaAlAs/GaAs technology, molded in clear, bluegrey tinted plastic packages. TSAL6100X01 is released to Smoke-automatic Fire
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TSAL6100X01
TSAL6100X01
S8867,
18-Jul-08
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Photocathode
Abstract: intensifier XX1060 XX1210 XX1110 XX1190 cd 1191 XX1111 XX1112 XX1191
Text: Image intensifier tubes Single stage Type X X 1110 XX1111 XX 1190 X X 1191 XX 1200 XX 1201 Configuration Tetrode Tetrode Diode Diode Diode Diode Focusing method electrostatic Input face plate Fiber optics, flat 38 25 25 18 18 Glass Fiber optics Glass useful 9 in mm
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XX1110
XX1111
XX1191
Photocathode
intensifier
XX1060
XX1210
XX1190
cd 1191
XX1112
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