Untitled
Abstract: No abstract text available
Text: Data sheet 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Marking Business data Supplier WAGO Supplier part no.
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1N5408
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HSCH-9161
Abstract: HSMS-2850 United Detector silicon diode
Text: HSCH-9161 Zero Bias Beamlead Detector Diode Data Sheet Description Avago’s HSCH-9161 is a GaAs beamlead detector diode, fabricated using the modified barrier integrated diode MBID process[1]. This diode is designed for zero bias detecting applications at frequencies through
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HSCH-9161
HSCH-9161
5988-5907EN
5988-6209EN
March31,
HSMS-2850
United Detector silicon diode
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1gg5
Abstract: HSCH-9161 AGILENT TECHNOLOGIES 9161 4009 w-band pn#2 hsch-9161 W-band diode GaAs Detector Diode
Text: Agilent HSCH-9161 GaAs Detector Diode Data Sheet Description The HSCH-9161 is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode MBID process. Applications This diode is suitable for medium-low barrier, zero bias detector applications.The HSCH-9161
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HSCH-9161
HSCH-9161
HSCH-9161/rev
1gg5
AGILENT TECHNOLOGIES 9161
4009
w-band
pn#2 hsch-9161
W-band diode
GaAs Detector Diode
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HSCH-9161
Abstract: United Detector silicon diode application note 979
Text: HSCH-9161 Zero Bias Beamlead Detector Diode Data Sheet Description Features Avago’s HSCH-9161 is a GaAs beamlead detector diode, fabricated using the modified barrier integrated diode MBID process[1]. This diode is designed for zero bias detecting applications at frequencies through 110 GHz. It
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HSCH-9161
HSCH-9161
5988-6209EN
AV02-3625EN
United Detector silicon diode
application note 979
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Untitled
Abstract: No abstract text available
Text: Vishay Intertechnology, Inc. DIODE AND THYRISTOR MODULES ADD-A-PAK TO-240AA MODULES Up to 105 A, 1600 V, New Generation 7, Diode-Diode and Diode-SCR Configurations Available INT-A-PAK (34 MM) MODULES Up to 165 A, 1600 V, Diode-Diode and Diode-SCR Configurations
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O-240AA)
OT-227
VMN-MS6956-1408
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N40 DIODE
Abstract: HSCH-9161 PB26 farad PARALLEL CAPACITOR CAP-12 diode N40
Text: HSCH-9161 Diode Model Product Note #02 September1998 C1 11 fF D1 D2 Model Description PWR DBM CUR MA This product note provides a Spice model and a Libra model of the HSCH-9161 discrete beam lead GaAs diode. This diode is a modified barrier Schottky diode which features very low forward voltage
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HSCH-9161
September1998
12E-6
30E-15
84E-6
HP9161
N40 DIODE
PB26
farad
PARALLEL CAPACITOR
CAP-12
diode N40
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DIODE 914
Abstract: eeds Low Leakage Diode SMD Diode 631
Text: DESIGN CHALLENGE # 724 YOUR PORTABLE DEVICES REQUIRE LONGER BATTERY LIFE THINK EFFICIENT THINK CENTRAL TM MAXIMUM LEAKAGE CURRENT Standard Switching Diode 914 series 25nA Reverse Current T A =25˚C IR Low Leakage Diode (3003 series) 1.0nA Ultra Low Leakage Diode
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OD-523
OT-563
OD-323
OT-363
OT-23
OT-26
DIODE 914
eeds
Low Leakage Diode
SMD Diode 631
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Untitled
Abstract: No abstract text available
Text: HSCH-9161 HSCH-9162 GaAs Detector Diode Data Sheet Description Features The HSCH-916x is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode MBID process. • Low Junction Capacitance • fc >200 GHz • Lower Temperature
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HSCH-9161
HSCH-9162
HSCH-916x
HSCH916x
5989-6228EN
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Untitled
Abstract: No abstract text available
Text: 1N 914 Small-Signal Diode Fast Switching Diode Features Silicon Epitaxial Planar Diode For general purpose and switching Mechanical Data Case: DO-34, DO-35 Glass Case Weight: approx. 0.13g Maximum Ratings and Thermal Characteristics TA=25oC unless otherwise noted.
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DO-34,
DO-35
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TC611 Diode Model
Abstract: AGILENT TECHNOLOGIES 9161 AGILENT TECHNOLOGIES 9162 gamma detector tc6* agilent TC611 pn#2 hsch-9161 PN diode specifications GaAs Detector Diode
Text: HSCH-9161 HSCH-9162 GaAs Detector Diode Data Sheet Description Features The HSCH-916x is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode MBID process. • Low Junction Capacitance • fc >200 GHz • Lower Temperature
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HSCH-9161
HSCH-9162
HSCH-916x
HSCH916x
5989-6228EN
TC611 Diode Model
AGILENT TECHNOLOGIES 9161
AGILENT TECHNOLOGIES 9162
gamma detector
tc6* agilent
TC611
pn#2 hsch-9161
PN diode specifications
GaAs Detector Diode
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biconvex lens with focal length 1 m and diameter 25.4 mm
Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
Text: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power
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658nm
ML1016R
685nm
ML1012R
785nm
ML64114R
Revised11JUN99
biconvex lens with focal length 1 m and diameter 25.4 mm
laser diode DVD 100mw
DL-3147-011
laser diode toshiba 780nm
650nm laser diode 200mw
TOLD9225M
mitsubishi laser diode
OPHIR pd200
collimated LED 670 nm
DL3147-011
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Untitled
Abstract: No abstract text available
Text: US-Lasers: 904nm-5mW - Infrared Laser Diode and Infrared Diode Laser . Page 1 of 1 US-Lasers: 904nm-5mW - Infrared Laser Diode Back to Laser Diodes INFRARED DIODE LASER DATA SHEETS ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA for LASER DIODE z Index Guided MQW Structure
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904nm-5mW
904nm
com/n904nm5m
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pn junction diode structure
Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
Text: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss
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C10V
Abstract: C25V SVC333 IN 4004 diode diode IN 4004 3662 diode
Text: Ordering number:EN935B SVC333 Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features Package Dimensions • The SVC333 is a small sized variable capacitance diode designed for AM electronic tuning. This diode
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EN935B
SVC333
SVC333
SVC333]
C10V
C25V
IN 4004 diode
diode IN 4004
3662 diode
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BAP51-02
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Preliminary specification 1999 Jun 28 Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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M3D319
BAP51-02
OD523
MAM405
OD523)
125004/00/02/pp6
BAP51-02
BP317
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109 DIODE
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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M3D319
BAP50-02
OD523
MAM405
OD523)
613512/01/pp8
109 DIODE
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17033
Abstract: VISHAY sot23 device Marking DC 17417
Text: BAW56 VISHAY Vishay Semiconductors Dual Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common anode • This diode is also available in other configurations including: a single with type designation BAL99, a
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BAW56
BAL99,
BAV99,
BAV70.
OT-23
30k/box
30k/box
D-74025
10-Jul-03
17033
VISHAY sot23 device Marking DC
17417
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BAV70-GS18
Abstract: BAL99 BAV70 BAV70-GS08 BAV99 BAW56
Text: BAV70 VISHAY Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common cathode • This diode is also available in other configurations including:a dual common anode to cathode with
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BAV70
BAV99,
BAW56,
BAL99.
OT-23
BAV70-GS18
BAV70-GS08
D-74025
09-Jul-04
BAL99
BAV70
BAV70-GS08
BAV99
BAW56
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Untitled
Abstract: No abstract text available
Text: BAW56 VISHAY Vishay Semiconductors Dual Switching Diode Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual diode with common anode • This diode is also available in other configurations including: a single with type designation BAL99, a
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BAW56
BAL99,
BAV99,
BAV70.
OT-23
BAW56
BAW56-GS18
BAW56-GS08
D-74025
27-Apr-04
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Untitled
Abstract: No abstract text available
Text: BAW56-V www.vishay.com Vishay Semiconductors Small Signal Switching Diode, Dual FEATURES • Silicon epitaxial planar diode 3 • Fast switching dual diode with common anode • This diode is also available in other configurations including: a single with type
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BAW56-V
BAL99,
BAV99,
BAV70
AEC-Q101
OT-23
GS18/10K
10K/box
GS08/3K
15K/box
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Untitled
Abstract: No abstract text available
Text: 1N4151WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the
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1N4151WS-V
DO-35
1N4151,
LL4151.
AEC-Q101
2002/95/EC
2002/96/EC
OD-323
GS18/10
GS08/3
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Untitled
Abstract: No abstract text available
Text: 1N4151WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the
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1N4151WS-V
DO-35
1N4151,
LL4151.
AEC-Q101
2002/95/EC
2002/96/EC
OD-323
GS18/10
GS08/3
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diode Cathode indicated by blue band
Abstract: No abstract text available
Text: Philips Semiconductors Short-form product specification Silicon planar diode FEATURES BA582 QUICK REFERENCE DATA • Low diode capacitance SYMBOL • Low diode series resistance. Vr continuous reverse voltage If continuous forward current Co diode capacitance
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BA582
OD123
MAM157
OD123)
diode Cathode indicated by blue band
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R451570
Abstract: microwave detector diode Microwave Diode "zero-bias schottky diode" DIODE RF DETECTOR 33KOHM of resistance 33kohm
Text: A. NATIONAL MICROWAVE DIODE For 2.45 GHz nd 915 MHz Partnr: R451570 MICROWAVE DETECTOR DIODE. R 451570 is a general-purpose zero-bias Schottky diode microwave coaxial detector, intended primarily for 915 MHz and 2450MHz industrial applications. The detector delivers well-scaled DC voltages as a function of microwave power.
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R451570
R451570
2450MHz
33kOhm.
33kOhm,
Ta-25t)
microwave detector diode
Microwave Diode
"zero-bias schottky diode"
DIODE RF DETECTOR
33KOHM
of resistance 33kohm
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