Untitled
Abstract: No abstract text available
Text: BAY135 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode, High Voltage FEATURES • Silicon planar diode • Very low reverse current • Material categorization: For definitions of compliance www.vishay.com/doc?99912 please see APPLICATIONS
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BAY135
DO-35
TR/10K
50K/box
TAP/10K
50K/box
BAY135
BAY135-TR
BAY135-TAP
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Untitled
Abstract: No abstract text available
Text: BAY135 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode, High Voltage FEATURES • Silicon planar diode • Very low reverse current • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
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BAY135
DO-35
TAP/10K
50K/box
BAY135-TAP
2002/95/EC.
2002/95/EC
2011/65/EU.
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BAY135
Abstract: No abstract text available
Text: BAY135 Vishay Telefunken Switching Diode Features D Silicon Planar Diode D Very low reverse current Applications 94 9367 Protection circuits, delay circuits Order Instruction Type BAY135 Type Differentiation VRRM = 140 V Ordering Code BAY135–TAP Remarks
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BAY135
BAY135
D-74025
16-Feb-01
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BAY135
Abstract: No abstract text available
Text: BAY135 Vishay Semiconductors Switching Diode Features D Silicon Planar Diode D Very low reverse current Applications 94 9367 Protection circuits, delay circuits Order Instruction Type BAY135 Type Differentiation VRRM = 140 V Ordering Code BAY135–TAP Remarks
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BAY135
BAY135
D-74025
16-Feb-01
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BAY135
Abstract: bay13 CD1405
Text: BAY135 VISHAY Vishay Semiconductors Switching Diode Features • Silicon Planar Diode • Very low reverse current Applications Protection circuits, delay circuits Mechanical Data 94 9367 Case: DO-35 Glass Case Weight: approx. 130 mg Packaging Codes/Options:
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BAY135
DO-35
BAY135
BAY135-TR
BAY135-TAP
D-74025
31-Mar-04
bay13
CD1405
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Untitled
Abstract: No abstract text available
Text: BAY135 VISHAY Vishay Semiconductors Switching Diode Features • Silicon Planar Diode • Very low reverse current Applications Protection circuits, delay circuits Mechanical Data 94 9367 Case: DO-35 Glass Case Weight: approx. 130 mg Packaging Codes/Options:
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BAY135
DO-35
BAY135
BAY135-TR
BAY135-TAP
08-Apr-05
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DS2103SY
Abstract: DS2103SY21 DS2103SY22 DS2103SY23 DS2103SY24 DS2103SY25 DS2103SY26
Text: DS2103SY DS2103SY Rectifier Diode Replaces October 2001 version, DS4172-5.0 DS4172-5.1 December 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 2600V ■ High Surge Capability IF AV 5788A IFSM APPLICATIONS 81000A ■ Rectification ■ Freewheel Diode
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DS2103SY
DS4172-5
1000A
DS2103SY26
DS2103SY25
DS2103SY24
DS2103SY23
DS2103SY22
DS2103SY
DS2103SY21
DS2103SY22
DS2103SY23
DS2103SY24
DS2103SY25
DS2103SY26
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AN4839
Abstract: DS2103SY DS2103SY21 DS2103SY22 DS2103SY23 DS2103SY24 DS2103SY25 DS2103SY26
Text: DS2103SY DS2103SY Rectifier Diode Replaces October 2001 version, DS4172-5.0 DS4172-5.1 December 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 2600V ■ High Surge Capability IF AV 5788A IFSM APPLICATIONS 81000A ■ Rectification ■ Freewheel Diode
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DS2103SY
DS4172-5
1000A
DS2103SY26
DS2103SY25
DS2103SY24
DS2103SY23
DS2103SY22
AN4839
DS2103SY
DS2103SY21
DS2103SY22
DS2103SY23
DS2103SY24
DS2103SY25
DS2103SY26
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Untitled
Abstract: No abstract text available
Text: NTP35N15 Preferred Device Power MOSFET 37 Amps, 150 Volts N−Channel TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature
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NTP35N15
O-220
tpv10
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Untitled
Abstract: No abstract text available
Text: BAY135 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • Silicon Planar Diode • Very low reverse current • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21
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BAY135
2002/95/EC
2002/96/EC
DO-35
TR/10
TAP/10
BAY135
BAY135-TR
BAY135-TAP
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Untitled
Abstract: No abstract text available
Text: BAY135 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • Silicon Planar Diode • Very low reverse current • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21
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BAY135
2002/95/EC
2002/96/EC
DO-35
TR/10
TAP/10
BAY135
BAY135-TR
BAY135-TAP
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Untitled
Abstract: No abstract text available
Text: BAY135 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • Silicon Planar Diode • Very low reverse current • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21
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BAY135
2002/95/EC
2002/96/EC
DO-35
TR/10
TAP/10
BAY135
BAY135-TR
BAY135-TAP
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Untitled
Abstract: No abstract text available
Text: BAY135 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • Silicon Planar Diode • Very low reverse current • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21
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BAY135
2002/95/EC
2002/96/EC
DO-35
TR/10
TAP/10
BAY135
BAY135-TR
BAY135-TAP
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BAY135
Abstract: BAY135-TAP BAY135-TR
Text: BAY135 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • • • • Silicon Planar Diode Very low reverse current Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC e2 Applications 94 9367 • Protection circuits, delay circuits
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BAY135
2002/95/EC
2002/96/EC
DO-35
BAY135-TR
BAY135-TAP
D-74025
09-Dec-05
BAY135
BAY135-TAP
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BAY135
Abstract: BAY135-TAP BAY135-TR BAY13
Text: BAY135 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • • • • Silicon Planar Diode Very low reverse current Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC e2 Applications 94 9367 • Protection circuits, delay circuits
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BAY135
2002/95/EC
2002/96/EC
DO-35
BAY135-TR
BAY135-TAP
08-Apr-05
BAY135
BAY135-TAP
BAY13
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Untitled
Abstract: No abstract text available
Text: BAY135 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • • • • Silicon Planar Diode Very low reverse current e2 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications 94 9367 • Protection circuits, delay circuits
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BAY135
2002/95/EC
2002/96/EC
TR/10
TAP/10
BAY135
BAY135-TR
BAY135-TAP
08-Apr-05
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VEC2801
Abstract: marking BL
Text: VEC2801 Ordering number : EN9078 SANYO Semiconductors DATA SHEET VEC2801 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features The best suited for DC / DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
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VEC2801
EN9078
VEC2801
marking BL
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thyristor ABB
Abstract: ABB thyristor 5 0584E Abb F 374
Text: 5STR 04T2032 5STR 04T2032 Old part no. TP 907FC-370-20 Reverse Conducting Thyristor Properties Integrated freewheeling diode Optimized for low dynamic losses Applications Traction Key Parameters V DRM = 2 000 I TAVm = 374 I TSM = 5 000 V TO = 1.748 rT = 0.653
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04T2032
907FC-370-20
04T2032
1768/138a,
TP/188/05a
Aug-11
thyristor ABB
ABB thyristor 5
0584E
Abb F 374
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G3F diode
Abstract: No abstract text available
Text: Laser Diodes Gemini Series - 9x× nm High Brightness Laser Diode BLD-91-tt-50W-G3-F-10-c-l-xxx BLD-94-tt-50W-G3-F-10-c-l-xxx BLD-98-tt-50W-G3-F-10-c-l-xxx High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and
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BLD-91-tt-50W-G3-F-10-c-l-xxx
BLD-94-tt-50W-G3-F-10-c-l-xxx
BLD-98-tt-50W-G3-F-10-c-l-xxx
G3F diode
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5STR04T2032
Abstract: thyristor t 188 f 1000 5STR tr 453 thyristor
Text: 5STR 04T2032 5STR 04T2032 Old part no. TP 907FC-370-20 Reverse Conducting Thyristor Properties § Integrated freewheeling diode § Optimized for low dynamic losses Applications § Traction Key Parameters V DRM = 2 000 I TAVm = 374 I TSM = 5 000 V TO = 1.748
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04T2032
907FC-370-20
04T2032.
04T1832.
1768/138a,
TP/188/05
Jul-10
5STR04T2032
thyristor t 188 f 1000
5STR
tr 453 thyristor
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TP 907FC-320-20
Abstract: 5STR 907FC-320-20 03T2040 thyristor ABB 0 273 300 354 ABB thyristor 5 03T2
Text: 5STR 03T2040 5STR 03T2040 Old part no. TP 907FC-320-20 Reverse Conducting Thyristor Properties • Integrated freewheeling diode • Optimized for low dynamic losses Applications Traction Key Parameters V DRM = 2 000 I TAVm = 360 I TSM = 5 000
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03T2040
907FC-320-20
03T2040
1768/138a,
TP/273/08b
Apr-12
TP 907FC-320-20
5STR
907FC-320-20
thyristor ABB
0 273 300 354
ABB thyristor 5
03T2
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d918
Abstract: D938 TND903 TND907
Text: SERIES TND D IO D E ARRAYS The TND series consists of diode arrays packaged in 14-pin and 16-pin dual in-line plastic packages for easy automatic insertion and better printed circuit board density. In addition to the diode characteristics for standard products
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OCR Scan
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PDF
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14-pin
16-pin
1N3070,
1N3595,
1N3600,
1N4153,
1N4447
d918
D938
TND903
TND907
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ND921
Abstract: br 903
Text: SERIES TND D IO D E ARRAYS The TND series consists of diode arrays packaged in 14-pin and 16-pin dual in-line plastic packages for easy autom atic insertion and better printed circuit board density. In addition to the diode characteristics for standard products
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OCR Scan
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PDF
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14-pin
16-pin
1N3070,
1N3595,
1N3600,
1N4153,
1N4447
TND903
TND905
TND907
ND921
br 903
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MONOLITHIC DIODE matrices
Abstract: HM1-051 diode matrix hm1 Diode S4 55a HM9-050 harris diode HM9-081 diode matrix diode matrix harris HM-030
Text: CIE1 HM-010/030/040/050/ 074/080/090 HARRIS SEM IC O N D U C TO R A D IV ISIO N O F H A R R IS C O R P O R A T IO N MIL Temperature Diode Matrices Harris M o n olithic Diode Matrices consist o f arrays o f passivated silicon diodes, fabricated in dielectrically
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OCR Scan
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PDF
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HM-010/030/040/050/
Me-18
MONOLITHIC DIODE matrices
HM1-051
diode matrix hm1
Diode S4 55a
HM9-050
harris diode
HM9-081
diode matrix
diode matrix harris
HM-030
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