Untitled
Abstract: No abstract text available
Text: PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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Original
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PD-95321
IRGIB6B60KDPbF
O-220
O-220
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PDF
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VCC400V
Abstract: C-150
Text: PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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Original
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PD-95321
IRGIB6B60KDPbF
O-220
O-220
VCC400V
C-150
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PDF
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diode 30a 400v
Abstract: 12V 30A diode 1085 CT 600v 30a IGBT C-150 IRGP30B60KD-E
Text: PD - 94388B IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.
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Original
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94388B
IRGP30B60KD-E
O-247AD
O-247AD
diode 30a 400v
12V 30A diode
1085 CT
600v 30a IGBT
C-150
IRGP30B60KD-E
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94385F IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.
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Original
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94385F
IRGB5B120KD
O-220
O-220AB
O-220AB
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 95120A IRGP30B60KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.
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Original
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5120A
IRGP30B60KD-EP
O-247AD
O-247AD
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PDF
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IRGB5B120KD
Abstract: TF010
Text: PD - 94385F IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.
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Original
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94385F
IRGB5B120KD
O-220
O-220AB
O-220AB
IRGB5B120KD
TF010
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94388B IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.
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Original
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94388B
IRGP30B60KD-E
O-247AD
O-247AD
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PDF
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C-150
Abstract: IRGP30B60KD-EP
Text: PD - 95120A IRGP30B60KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.
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Original
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5120A
IRGP30B60KD-EP
O-247AD
O-247AD
C-150
IRGP30B60KD-EP
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 95120A IRGP30B60KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.
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Original
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5120A
IRGP30B60KD-EP
O-247AD
O-247AD
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PDF
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Untitled
Abstract: No abstract text available
Text: Comchip Low Profile SMD ESD Protection Diode SMD Diode Specialist CPDURT5V0C-HF RoHS Device Halogen Free 0603/SOD-523F Features 0.071 1.80 0.063(1.60) -Bi-directional ESD protection. -Surface mount package. -Extremely thin / leadless package. 0.039(1.00)
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Original
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0603/SOD-523F
0603/SOD-523F
MIL-STD-750
QW-G7041
URT/0603
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PDF
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Untitled
Abstract: No abstract text available
Text: Comchip SMD ESD Protection Diode SMD Diode Specialist CPDVR083V3UA RoHS Device Features - IEC61000-4-2 ESD ±15kV(Contact),±20kV(Air). - Working voltage: 3.3V SOT-383F 0.086(2.20) 0.079(2.00) - Low leakage current. - Low operating and clamping voltages.
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Original
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CPDVR083V3UA
IEC61000-4-2
OT-383F
OT-383F
MIL-STD-750
QW-A7029
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PDF
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Untitled
Abstract: No abstract text available
Text: Comchip SMD ESD Protection Diode SMD Diode Specialist CPDVR083V3UA RoHS Device Features - IEC61000-4-2 ESD ±15kV(Contact),±20kV(Air). - Working voltage: 3.3V SOT-383F 0.086(2.20) 0.079(2.00) - Low leakage current. - Low operating and clamping voltages.
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Original
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CPDVR083V3UA
IEC61000-4-2
OT-383F
OT-383F
MIL-STD-750
QW-A7029
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PDF
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SMD diode MARKING CODE E05
Abstract: e05 Bidirectional diode diode marking w1 Comchip
Text: Comchip SMD ESD Protection Diode SMD Diode Specialist CPDU5V0C-HF RoHS Device Halogen Free 0603/SOD-523F Features 0.071 1.80 0.063(1.60) - Bi-directional ESD protection. - Surface mount package. 0.039(1.00) 0.031(0.80) - Operating voltage: 5V. Mechanical data
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Original
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0603/SOD-523F
0603/SOD-523F
MIL-STD-750
capac004
OD-523)
QW-G7025
SMD diode MARKING CODE E05
e05 Bidirectional diode
diode marking w1
Comchip
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PDF
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Untitled
Abstract: No abstract text available
Text: TESDU5V0/TESDU12V/TESDU24V Bi-directional ESD Protection Diode Small Signal Diode 0603 Features Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) Designed for mounting on small surface. Moisture sensitivity level 1 Protects one birectional I/O line
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Original
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TESDU5V0/TESDU12V/TESDU24V
IEC61000-4-2
MIL-STD-750,
C/10s
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: TESDE5V0/TESDE12V/TESDE24V Bi-directional ESD Protection Diode Small Signal Diode 0503 Features Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) Designed for mounting on small surface. Moisture sensitivity level 1 Protects one birectional I/O line
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Original
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TESDE5V0/TESDE12V/TESDE24V
IEC61000-4-2
MIL-STD-750,
C/10s
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 95194A IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.
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Original
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5194A
IRGB15B60KDPbF
IRGS15B60KDPbF
IRGSL15B60KDPbF
O-220AB
O-262
AN-994.
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PDF
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Untitled
Abstract: No abstract text available
Text: TESDL5V0/TESDL12V/TESDL24V Bi-directional ESD Protection Diode Small Signal Diode 1005 Features Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) Designed for mounting on small surface. Moisture sensitivity level 1 Protects one birectional I/O line
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Original
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TESDL5V0/TESDL12V/TESDL24V
IEC61000-4-2
MIL-STD-750,
C/10s
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PDF
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AN-994
Abstract: C-150 IRGS15B60K
Text: PD - 95194A IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.
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Original
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5194A
IRGB15B60KDPbF
IRGS15B60KDPbF
IRGSL15B60KDPbF
O-220AB
AN-994.
O-220
AN-994
C-150
IRGS15B60K
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PDF
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part r1G
Abstract: No abstract text available
Text: TESDE5V0/TESDE12V/TESDE24V Bi-directional ESD Protection Diode Small Signal Diode 0503 Features Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) Designed for mounting on small surface. Moisture sensitivity level 1 Protects one birectional I/O line
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Original
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TESDE5V0/TESDE12V/TESDE24V
IEC61000-4-2
MIL-STD-750,
C/10s
part r1G
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PDF
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Untitled
Abstract: No abstract text available
Text: TESDU5V0/TESDU12V/TESDU24V Bi-directional ESD Protection Diode Small Signal Diode 0603 Features Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) Designed for mounting on small surface. Moisture sensitivity level 1 Protects one birectional I/O line
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Original
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TESDU5V0/TESDU12V/TESDU24V
IEC61000-4-2
MIL-STD-750,
C/10s
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PDF
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AN-994
Abstract: C-150
Text: PD - 95194A IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.
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Original
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5194A
IRGB15B60KDPbF
IRGS15B60KDPbF
IRGSL15B60KDPbF
O-220AB
AN-994.
O-220
AN-994
C-150
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PDF
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5252B
Abstract: Zener diode 81A
Text: MMBZ5221B-5252B SEM ICO NDUCTO R ZENER DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. FEATURES • Small Package : SOT-23. MAXIMUM RATING Ta=25°C SYMBOL RATING CHARACTERISTIC p*D*
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OCR Scan
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OT-23.
MMBZ5221B-5252B
OT-23
MMBZ5251B
MMBZ5252B
MMBZ5235B
MMBZ5242B
MMBZ5245B
MMBZ5246B
MMBZ5248B
5252B
Zener diode 81A
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PDF
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zener c26
Abstract: diode zener c26 c26 zener diode
Text: Central“ CMSZ5221B THRU CMSZ5261B Semiconductor Corp. 250mW ZENER DIODE 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSZ5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industri al, commercial, entertainment and computer
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OCR Scan
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CMSZ5221B
CMSZ5261B
250mW
OT-323
OT-323
26-Septmber
zener c26
diode zener c26
c26 zener diode
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PDF
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode OUTLINE Package : 1F D1FS6 Unit ‘mm Weight U.0f>8u Typ a v-K -y-» 60V 1.1A ' Cathode mark 1I r l cos I GO cn Feature • 'J S M D • Small SMD • P r r s m 7 ' K 5 > î/ x ( S S E • P rrsm Rating Type Na ir: CM
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OCR Scan
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501lz
J532-1)
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PDF
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