U-LD-851066D-preliminary
Abstract: U-LD-851066D 10mw 850nm to ld 850nm laser diode 850nm 5mw laser diode high power 850nm ld 850 nm to-can
Text: U-LD-851066D-preliminary UNION OPTRONICS CORP. 850nm Laser Diode 850nm Laser Diode U-LD-851066D-preliminary •Specifications 1 Device: (2) Structure: Laser Diode TO-18(ψ5.6mm), With Pb free glass cap, no PD ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃)
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U-LD-851066D-preliminary
850nm
980nm
U-LD-851066D-preliminary
U-LD-851066D
10mw 850nm to ld
850nm laser diode
850nm 5mw laser diode
high power 850nm ld
850 nm to-can
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Untitled
Abstract: No abstract text available
Text: BAS16WS-V-G www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Fast switching diode • AEC-Q101 qualified • Material categorization: For definitions of compliance www.vishay.com/doc?99912
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BAS16WS-V-G
AEC-Q101
OD-323
18/10K
10K/box
08/3K
15K/box
BAS16WS-V-G-18
BAS16WS-V-G-08
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Untitled
Abstract: No abstract text available
Text: BAS16WS-G www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Fast switching diode • AEC-Q101 qualified • Base P/N-G3 - green, commercial grade • Material categorization: For definitions of
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BAS16WS-G
AEC-Q101
OD-323
18/10K
10K/box
08/3K
15K/box
BAS16WS-G3-08
BAS16WS-G3-18
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Untitled
Abstract: No abstract text available
Text: laser diode module, elliptical beam, ø12mm A compact, ergonomically-designed 635/639nm laser diode module for a wide range of applications such as industrial alignment, positioning and inspection and sensing. Laser diode modules from the Optoelectronics Company are available in
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635/639nm
405nm
852nm,
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sot23 marking tr1
Abstract: HSMP-3880
Text: Agilent HSMP-3880 Surface Mount RF PIN Switch Diode Data Sheet Features • Diodes Optimized for: Ultra-Low Distortion Switching Description/Applications The HSMP-3880 switching diode is an ultra low distortion device optimized for higher power applications to 1.5 GHz.
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HSMP-3880
OT-23
Pi0005
5988-9924EN
5989-2502EN
sot23 marking tr1
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transistor D 2394
Abstract: HSMP-3880 A0 SOT-23 PIN diode SPICE model sot top marking codes HSMP3880 pin diode agilent marking TR1 SOT-23
Text: Agilent HSMP-3880 Surface Mount RF PIN Switch Diode Data Sheet Features • Diodes Optimized for: Ultra-Low Distortion Switching Description/Applications The HSMP-3880 switching diode is an ultra low distortion device optimized for higher power applications to 1.5 GHz.
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HSMP-3880
OT-23
5988-2502EN
5989-4029EN
transistor D 2394
A0 SOT-23
PIN diode SPICE model
sot top marking codes
HSMP3880
pin diode agilent
marking TR1 SOT-23
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MARKING SOT23 tr2
Abstract: sot23 marking tr1 marking P2 sot-23 MARKING 313 sot-23 marking code 916 diode HSMP-3880
Text: Agilent HSMP-3880 Surface Mount RF PIN Switch Diode Data Sheet Features • Diodes Optimized for: Ultra-Low Distortion Switching Description/Applications The HSMP-3880 switching diode is an ultra low distortion device optimized for higher power applications to 1.5 GHz.
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HSMP-3880
OT-23
5988-9924EN
5989-2502EN
MARKING SOT23 tr2
sot23 marking tr1
marking P2 sot-23
MARKING 313 sot-23
marking code 916 diode
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Untitled
Abstract: No abstract text available
Text: BAT46W-G www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features very low turn-on voltage and fast switching • This device is protected by a PN junction guard ring against excessive voltage, such as
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BAT46W-G
AEC-Q101
OD-123
18/10K
10K/box
08/3K
15K/box
BAT46W
2002/95/EC.
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: BAT46W-G www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features very low turn-on voltage and fast switching • This device is protected by a PN junction guard ring against excessive voltage, such as
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BAT46W-G
AEC-Q101
OD-123
18/10K
10K/box
08/3K
15K/box
BAT46W-electronic
2002/95/EC.
2002/95/EC
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TSHF5400
Abstract: No abstract text available
Text: TSHF5400 High-Speed IR Emitting Diode in ø 5 mm T–1¾ Package Description TSHF5400 is a high-speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. The new technology combines the high speed of
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TSHF5400
TSHF5400
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TSHF5400
Abstract: No abstract text available
Text: TELEFUNKEN Semiconductors TSHF 5400 High Speed IR Emitting Diode in ø 5 mm T–1¾ Package Description TSHF 5400 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. The new technology combines the high speed of
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KVCF1-8512
Abstract: No abstract text available
Text: VCSEL KVCF1-8512 VCSEL, or Vertical Cavity Surface Emitting Laser, is semiconductor microlaser diode that emits light in a cylindrical beam vertically from the surface of a fabricated wafer. Unit: ㎜ DIMENSIONS Φ5.35 ±0.1 Φ4.66 ±0.05 ±0.1 ±1.0 3.5
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KVCF1-8512
016MAX
850nm
381MAX.
KVCF1-8512
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mark 68m
Abstract: DSA003644
Text: HZM6.8MWA Silicon Planar Zener Diode for Surge Absorb ADE-208-851A Z Rev.1 Nov. 2001 Features • HZM6.8MWA has two devices in a monolithic, and can absorb surge. • MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information
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ADE-208-851A
D-85622
D-85619
mark 68m
DSA003644
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Hitachi DSA002718
Abstract: No abstract text available
Text: HZM6.8MWA Silicon Planar Zener Diode for Surge Absorb ADE-208-851 Z Rev 0 May 2000 Features • HZM6.8MWA has two devices in a monolithic, and can absorb surge. • MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information
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ADE-208-851
Hitachi DSA002718
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mark 68m
Abstract: SC-59A
Text: HZM6.8MWA Silicon Planar Zener Diode for Surge Absorb REJ03G1210-0200 Previous: ADE-208-851A Rev.2.00 Jun 13, 2005 Features • HZM6.8MWA has two devices in a monolithic, and can absorb surge. • MPAK Package is suitable for high density surface mounting and high speed assembly.
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REJ03G1210-0200
ADE-208-851A)
PLSP0003ZC-A
Unit2607
mark 68m
SC-59A
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diode in 5401
Abstract: for APD bias high-voltage 104 Ceramic Disc Capacitors 100v
Text: TIED87, TIED88, TIED 89 Reference Diode Pairs Texas Optoelectronics, Inc. DESCRIPTION FEATURES These diode pairs consist of an avalanche photodiode APD and a small reference diode that have been manufactured together to ensure close matching of both the breakdown voltages
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TIED87,
TIED88,
X10-3
poss75042
SJ4IIL230)
JL3110209)
0L19O)
diode in 5401
for APD bias high-voltage
104 Ceramic Disc Capacitors 100v
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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108th
MT1115
2N3303
FPT100 phototransistor
UA739 equivalent
transistor bc 554 pnp
mt1039
ft2974
fairchild 2N3565
FD6666 diode
transistor npn Epitaxial Silicon SST 117
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Diode RJ 4A
Abstract: aeg diode w200v diode 8517E BYT 1000 ir 0588 diode byt 85 1000
Text: A E G CORP 17E D 002^4213 OOOTf l OS 3 BYT 85 TTKUMFIIMIKIIM electronic Creative Technolog es T ~ 0 2 ~ i *7 Ultra Fast Recovery Silicon Power Diode Application: Fast switched mode power supplies, freeweeling and snubber diode in motorcontrol circuits Features:
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metelics FSCM 59365
Abstract: MSS30 MSS30-248-B20 442-E45 b20 diode FSCM 59365
Text: MSS-30,000 Series Low Barrier Schottky Diode metelics CORPORATION Features Applications • Lo w Rs— 5Q • Mixers: single diode, image reject, image enhancement, ring quad • Lo w NF • Doublers • Available in many configurations • Modulators • Tight batch matching available
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MSS-30
046-CI
046-P55
046-P86
050-C
metelics FSCM 59365
MSS30
MSS30-248-B20
442-E45
b20 diode
FSCM 59365
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diode marking code I5
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single Diode mtm D30L60 OUTLINE Unit I mm Weight 43g Typ Package I ITO-3P 15 600V 30A Date code 5.5 N Feature • ® M ± FRD • High Voltage Super FRD • Low Noise • trr=150ns Type No. • trr= 150ns toft Polarity • Full Molded
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D30L60
150ns
diode marking code I5
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Untitled
Abstract: No abstract text available
Text: 7 -f> l U tipe Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS D5LC20UR Case : ITO -220 200V 5A É lit . # •trr 3 5 n s • 7 JIÆ -JL /K •S R B S m • 3 7 J — m -Y Jb OA. SSBÆ •a«, « s . • Æ tè ü fa RATINGS Absolute Maximum Ratings
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D5LC20UR
DD0343Ã
000343T
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Untitled
Abstract: No abstract text available
Text: '> 3 7 t Schottky Barrier Diode - K Axial Diode OUTLINE DIMENSIONS D1NS6 Case : 0.6 ^ I 2.6 =01 60V 1A i & i a © • T i 15013 o SIE #P h rsm ? J M- D (2 Cathode : Anode ^ Cathode band m j* *}sg]@sr*H2 M arking •S R S S S6 _a 24 -v h ,iii (M) Date code
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0D0316T
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30 kv diode
Abstract: P diode BQB 80 THBG01 THD9751 THD9752 D 10 N diode SCHOTT diode
Text: ALLEGRO MICROSYSTEM S 8514019 INC SPRAGUE. =13 D • 0304330 SEM ICO N D S/ IC S □D 0 3 h n 93D 2 ■ ALGR 03619 DIODE CHIPS ‘THD’ Photodiodes ELECTRICAL CHARACTERISTICS at TA = 25°C ^BR Device Type II* *D Min. <fclR m-A Max. (nA) i'V R (V) Min.
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THD9751
THD9752
THYA01
THYA02
THYB01
THYB02
THYI01
30 kv diode
P diode
BQB 80
THBG01
D 10 N diode
SCHOTT
diode
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