NEC JAPAN 567
Abstract: NX8563LF PX10160E
Text: DATA SHEET LASER DIODE NX8563LF 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563LF is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain
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NX8563LF
NX8563LF
NEC JAPAN 567
PX10160E
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601 Opto isolator
Abstract: NX8563LF PX10160E
Text: LASER DIODE NX8563LF 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563LF is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain Fiber (PMF).
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NX8563LF
NX8563LF
601 Opto isolator
PX10160E
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diode 828
Abstract: 7h diode diode mr 828 828 diode diode m91
Text: MR 820.MR 828 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter .3 Axial lead diode Fast silicon rectifier diodes MR 820.MR 828 Forward Current: 5 A Reverse Voltage: 50 to 1000 V
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601 Opto isolator
Abstract: NX8562LF PX10160E
Text: LASER DIODE NX8562LF 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8562LF is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain Fiber (PMF).
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NX8562LF
NX8562LF
601 Opto isolator
PX10160E
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NX8570SD
Abstract: 409d 766d ETALON 362d TLD 521 315D 346D 377D 967D
Text: LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8570
NX8570SD
409d
766d
ETALON
362d
TLD 521
315D
346D
377D
967D
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1583 Series
Abstract: 362d 766d
Text: LASER DIODE NX8571 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8571
1583 Series
362d
766d
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ingaasp
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX8562LF 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8562LF is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain
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NX8562LF
NX8562LF
ingaasp
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continuous wave light source for dwdm system
Abstract: NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8563 NX8563LB NX8563LF 10 gb laser diode
Text: DATA SHEET LASER DIODE NX8563 Series 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain
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NX8563
continuous wave light source for dwdm system
NX8300BE-CC
NX8300CE-CC
NX8303BG-CC
NX8303CG-CC
NX8304BE-CC
NX8563LB
NX8563LF
10 gb laser diode
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NX8300BE-CC
Abstract: NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8562LB NX8562LF 10 gb laser diode NEC 6109 SERIES continuous wave light source for dwdm system
Text: DATA SHEET LASER DIODE NX8562 Series 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8562 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization
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NX8562
NX8300BE-CC
NX8300CE-CC
NX8303BG-CC
NX8303CG-CC
NX8304BE-CC
NX8562LB
NX8562LF
10 gb laser diode
NEC 6109 SERIES
continuous wave light source for dwdm system
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362d
Abstract: 601 Opto isolator 766d transistor NEC D 587 315D 346D 377D 409D
Text: DATA SHEET LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8570
362d
601 Opto isolator
766d
transistor NEC D 587
315D
346D
377D
409D
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362d
Abstract: 315D 346D 377D NX8570SA b 803 a NX8570SD 933D 618D
Text: DATA SHEET LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8570
362d
315D
346D
377D
NX8570SA
b 803 a
NX8570SD
933D
618D
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362d
Abstract: 315D 346D 377D NX8571SA
Text: DATA SHEET LASER DIODE NX8571 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8571
362d
315D
346D
377D
NX8571SA
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537D
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX8571 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8571
537D
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TOSA DWDM
Abstract: NX8531NH TEC TOSA
Text: DATA SHEET LASER DIODE NX8530NH,NX8531NH 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE 2.5 Gb/s DIRECTLY MODULATION LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8530NH and NX8531NH are 1 550 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode module TOSA
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NX8530NH
NX8531NH
NX8531NH
NX8530NH)
NX8531NH)
TOSA DWDM
TEC TOSA
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C 828 Transistor
Abstract: C 828 Transistor pins TRANSISTOR C 369 transistor c 828 low level Mil-R-39016 iC 828 Transistor transistor 828 MIL-R-39016/9 828 diode MIL-R-39016-9
Text: MA MAD MADD MAT TO-5 HIGH-PERFORMANCE RELAYS • ■ ■ MA MAD MADD MAT STANDARD TO-5 HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/TRANSISTOR DRIVEN HIGH-PERFORMANCE
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MIL-R-39016/9
MIL-R-39016/15
MIL-R-39016/20
MIL-R-28776/1
C 828 Transistor
C 828 Transistor pins
TRANSISTOR C 369
transistor c 828 low level
Mil-R-39016
iC 828 Transistor
transistor 828
MIL-R-39016/9
828 diode
MIL-R-39016-9
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C 828 Transistor
Abstract: transistor c 828 cii to-5 type mad relay
Text: MA MAD MADD MAT TO-5 HIGH-PERFORMANCE RELAYS • ■ ■ MA MAD MADD MAT STANDARD TO-5 HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/TRANSISTOR DRIVEN HIGH-PERFORMANCE
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MIL-R-39016/9
MIL-R-39016/15
MIL-R-39016/20
MIL-R-28776/1
C 828 Transistor
transistor c 828
cii to-5 type mad relay
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FP35R12W2T4
Abstract: MC65 FP35R12W2T4_B11 fP35R12W2T4-b11
Text: Technische Information / technical information FP35R12W2T4_B11 IGBT-Module IGBT-modules EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT4 and Emitter Controlled4 Diode
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FP35R12W2T4
MC65
FP35R12W2T4_B11
fP35R12W2T4-b11
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FF300R12KE3
Abstract: FF300
Text: Technische Information / technical information FF300R12KE3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstopp IGBT3 und EmCon High Efficiency Diode 62mm C-series module with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter
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FF300R12KE3
FF300R12KE3
FF300
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UA 741 SMD
Abstract: uA 741 automatic laser power control 6 pin laser diode capacitor 475 laser diode driver circuit automatic power control SMD-Ferrit MS-026 VSC7938 VSC7939
Text: VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet SONET/SDH 3.125Gb/s Laser Diode Driver with Automatic Power Control VSC7939 Features Applications • Power Supply: 3.3V or 5V ±5% • AC-Coupled to Laser Diode • SONET/SDH at 622Mb/s, 1.244Gb/s,
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125Gb/s
VSC7939
622Mb/s,
244Gb/s,
488Gb/s,
062Gb/s)
100mA
VSC7939
125Gb/s.
UA 741 SMD
uA 741
automatic laser power control
6 pin laser diode
capacitor 475
laser diode driver circuit automatic power control
SMD-Ferrit
MS-026
VSC7938
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NTE6355
Abstract: NTE6354 NTE6359 NTE6356 NTE6357 NTE6358 NTE6362 NTE6363 NTE6364 NTE6365
Text: NTE6354 thru NTE6365 Silicon Power Rectifier Diode 300 Amp, DO9 Features: D Diffused Diode D High Voltage Ratings up to 1600 Volts D High Surge Current Capabilities D Available in Anode−to−Case or Cathode−to−Case Style Ratings and Characteristics:
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NTE6354
NTE6365
NTE6354,
NTE6355*
NTE6356,
NTE6357*
NTE6358,
NTE6359*
NTE6355
NTE6359
NTE6356
NTE6357
NTE6358
NTE6362
NTE6363
NTE6364
NTE6365
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NX8563
Abstract: NX8563-AZ NX8563LB NX8563LF laser diode 1550 nm 160832
Text: NEC's CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATIONS 10 mW MIN NX8563 SERIES FEATURES DESCRIPTION • OUTPUT POWER: Pf = 10 mW MIN NEC's NX8563 Series are a 1550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode
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NX8563
NX8563
14-PIN
NX8563-AZ
NX8563LB
NX8563LF
laser diode 1550 nm
160832
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JAN 1N4500
Abstract: No abstract text available
Text: COMPUTER DIODE 1N4500, JAN & JANTX 1N4500 500mA Switching Diode FEATURES DESCRIPTION • • • • T h is d evice ¡s a fast sw itching, high co n d u cta n ce diode for m ilitary, space, high rel and other systems. Metallurgical Bond Qualified to MIL-S-19500/403
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500mA
1N4500,
1N4500
MIL-S-19500/403
DO-35
80Vdc
75Vpk
300mAdc
20mAdc
300mAde
JAN 1N4500
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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diode 828
Abstract: 828 diode
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2842 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE DESCRIPTION Mitsubishi M C2842 is a super mini package plastic seal type silicon epitaxial OUTLINE DRAWING type diode,especially designed for high speed switching application.
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MC2842
C2842
SC-70
diode 828
828 diode
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