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    DIODE 804 Search Results

    DIODE 804 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 804 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    U-CP-80C0055-preliminary

    Abstract: 808nm 300mw laser diode laser diode 300mw TO-CAN 808nm 300mW TO18 Laser 808nm 300 mw 808nm laser diode laser diode bare chip
    Text: U-CP-80C0055-preliminary UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80C0055-preliminary •Specifications 1 Size : (2) Device: (3) Structure 300*400*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)


    Original     		PDF U-CP-80C0055-preliminary 808nm 886-3-g U-CP-80C0055-preliminary 808nm 300mw laser diode laser diode 300mw TO-CAN 808nm 300mW TO18 Laser 808nm 300 mw 808nm laser diode laser diode bare chip

    U-CP-80B0065

    Abstract: diode laser 808nm 200mW TO-CAN 808nm 808nm laser diode laser diode bare chip laser diode 808nm
    Text: U-CP-80B0065 UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80B0065 •Specifications 1 Size : (2) Device: (3) Structure 300*500*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm) 500μm


    Original     		PDF U-CP-80B0065 808nm U-CP-80B0065 diode laser 808nm 200mW TO-CAN 808nm laser diode laser diode bare chip laser diode 808nm

    SLD300

    Abstract: SLD322V SLD322V-1 SLD322V-2 SLD322V-21 SLD322V-24 SLD322V-25 SLD322V-3 laser 790 nm sony
    Text: SLD322V High Power Density 0.5W Laser Diode Description The SLD322V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be


    Original     		PDF SLD322V SLD322V SLD300 M-248 LO-11) SLD322V-1 SLD322V-2 SLD322V-21 SLD322V-24 SLD322V-25 SLD322V-3 laser 790 nm sony

    irf 1830

    Abstract: 10A IGBT driver IC IRGB10B60KD C-150 IRGS10B60KD IRGSL10B60KD IRL3103L TRANSISTOR marking ar code irf 44 ns
    Text: PD - 94382D IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF 94382D IRGB10B60KD IRGS10B60KD IRGSL10B60KD O-220AB O-262 AN-994. irf 1830 10A IGBT driver IC IRGB10B60KD C-150 IRGS10B60KD IRGSL10B60KD IRL3103L TRANSISTOR marking ar code irf 44 ns

    1090D

    Abstract: 1000mW laser SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3
    Text: SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be


    Original     		PDF SLD323V SLD323V SLD300 M-248 LO-11) 1090D 1000mW laser SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3

    AN-994

    Abstract: C-150 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L
    Text: PD - 94925 IRGB10B60KDPbF IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF IRGB10B60KDPbF IRGS10B60KD IRGSL10B60KD O-220AB O-220. AN-994. O-220 AN-994 C-150 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L

    808nm 100mw laser diode

    Abstract: Laser Diode 808 nm SLD-808-P200-05 laser diode 780 nm laser diode 808nm 808nm laser diode Laser Diode 808 300 mw diode laser 808nm 200mW 808 nm 100 mw 808nm
    Text: SLD-808-P200-05 UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode SLD-808-P200-05 •Specifications 1 Device: (2) Structure: (3) Power Output: Laser Diode TO-18(φ5.6mm) 200mW (180mW Recommended) ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃)


    Original     		PDF SLD-808-P200-05 808nm 200mW 180mW 808nm 100mw laser diode Laser Diode 808 nm SLD-808-P200-05 laser diode 780 nm laser diode 808nm 808nm laser diode Laser Diode 808 300 mw diode laser 808nm 200mW 808 nm 100 mw

    IRGB10B60KD

    Abstract: C-150 IRF1010 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L
    Text: PD - 94382C IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF 94382C IRGB10B60KD IRGS10B60KD IRGSL10B60KD O-220AB O-262 O-220AB IRGB10B60KD C-150 IRF1010 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L

    irf 1830

    Abstract: diode 10a 400v C-150 IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L irf 607
    Text: PD - 94382D IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF 94382D IRGB10B60KD IRGS10B60KD IRGSL10B60KD O-220AB O-262 AN-994. irf 1830 diode 10a 400v C-150 IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L irf 607

    Untitled

    Abstract: No abstract text available
    Text: PD - 94382D IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF 94382D IRGB10B60KD IRGS10B60KD IRGSL10B60KD O-220AB O-262 AN-994.

    808 nm 1000 mw

    Abstract: 1000mW laser diode SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3
    Text: SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be


    Original     		PDF SLD323V SLD323V SLD300 structur00 M-248 LO-11) 808 nm 1000 mw 1000mW laser diode SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3

    Untitled

    Abstract: No abstract text available
    Text: PD - 94382B IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF 94382B IRGB10B60KD IRGS10B60KD IRGSL10B60KD O-220AB O-262 O-220AB

    SLD322XT-24

    Abstract: SLD300 SLD322XT SLD322XT-1 SLD322XT-2 SLD322XT-21 SLD322XT-25 SLD322XT-3
    Text: SLD322XT High Power Density 0.5W Laser Diode Description The SLD322XT is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be


    Original     		PDF SLD322XT SLD322XT SLD300 65MAX M-273 LO-10) SLD322XT-24 SLD322XT-1 SLD322XT-2 SLD322XT-21 SLD322XT-25 SLD322XT-3

    Untitled

    Abstract: No abstract text available
    Text: PD - 94382 IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF IRGS10B60KD IRGSL10B60KD IRGS10B60KD O-262 IRGSL10B60KD

    SLD323XT

    Abstract: 1000mW laser SLD300 SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-25 SLD323XT-3 808 nm 1000 mw laser diode
    Text: SLD323XT High Power Density 1W Laser Diode Description The SLD323XT is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be


    Original     		PDF SLD323XT SLD323XT SLD300 65MAX M-273 LO-10) 1000mW laser SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-25 SLD323XT-3 808 nm 1000 mw laser diode

    SLD300

    Abstract: SLD322V SLD322V-1 SLD322V-2 SLD322V-21 SLD322V-24 SLD322V-25 SLD322V-3
    Text: SLD322V High Power Density 0.5W Laser Diode Description The SLD322V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be


    Original     		PDF SLD322V SLD322V SLD300 M-248 LO-11) SLD322V-1 SLD322V-2 SLD322V-21 SLD322V-24 SLD322V-25 SLD322V-3

    808 nm 1000 mw 2 pins

    Abstract: Laser Diode 808 2 pin 1000 mw 808 nm 1000 mw 2 Wavelength Laser Diode 808 nm 100 mw peltier cooler 1000mW laser 1000mW laser diode chip thermistor medical device Laser Diode 808 2000 mw
    Text: SLD323XT 1W High Power Laser Diode Description The SLD323XT is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achived by QW-SCH structure∗2.


    Original     		PDF SLD323XT SLD323XT SLD300 65MAX M-273 LO-10) 808 nm 1000 mw 2 pins Laser Diode 808 2 pin 1000 mw 808 nm 1000 mw 2 Wavelength Laser Diode 808 nm 100 mw peltier cooler 1000mW laser 1000mW laser diode chip thermistor medical device Laser Diode 808 2000 mw

    SLD300

    Abstract: SLD323XT SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-3
    Text: SLD323XT 1W High Power Laser Diode Description The SLD323XT is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achived by QW-SCH structure∗2.


    Original     		PDF SLD323XT SLD323XT SLD300 M-273 LO-10) 65MAX M-273 SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-3

    SLD300

    Abstract: SLD322XT SLD322XT-1 SLD322XT-2 SLD322XT-21 SLD322XT-24 SLD322XT-25 SLD322XT-3
    Text: SLD322XT 0.5W High Power Laser Diode Description The SLD322XT is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achived by QW-SCH structure∗2.


    Original     		PDF SLD322XT SLD322XT SLD300 65MAX M-273 LO-10) SLD322XT-1 SLD322XT-2 SLD322XT-21 SLD322XT-24 SLD322XT-25 SLD322XT-3

    SLD300

    Abstract: SLD322XT SLD322XT-1 SLD322XT-2 SLD322XT-21 SLD322XT-24 SLD322XT-3
    Text: SLD322XT 0.5W High Power Laser Diode Description The SLD322XT is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achived by QW-SCH structure∗2.


    Original     		PDF SLD322XT SLD322XT SLD300 M-273 LO-10) 65MAX M-273 SLD322XT-1 SLD322XT-2 SLD322XT-21 SLD322XT-24 SLD322XT-3

    808 nm 100 mw

    Abstract: SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-3 1000mW laser diode 808 nm 1000 mw
    Text: SLD323V High Power Density 1W Laser Diode Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achieved by QW-SCH structure∗2.


    Original     		PDF SLD323V SLD323V SLD300 M-248 LO-11) 808 nm 100 mw SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-3 1000mW laser diode 808 nm 1000 mw

    SLD300

    Abstract: SLD322V SLD322V-1 SLD322V-2 SLD322V-21 SLD322V-24 SLD322V-3 laser diode 300mw
    Text: SLD322V High Power Density 0.5W Laser Diode Description The SLD322V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achieved by QW-SCH structure∗2.


    Original     		PDF SLD322V SLD322V SLD300 M-248 LO-11) SLD322V-1 SLD322V-2 SLD322V-21 SLD322V-24 SLD322V-3 laser diode 300mw

    SONY 171

    Abstract: No abstract text available
    Text: SONY SLD322V High Power Density 0.5W Laser Diode Description The SLD322V is a high power, gain-guided laser diode produced by MOCVD method*1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which


    OCR Scan     		PDF SLD322V SLD300 SLD322V SS-00259, SS00259 net/Sonylnfo/procurementinfo/ss00259/ M-248 LO-11) SONY 171

    Untitled

    Abstract: No abstract text available
    Text: SONY SLD322XT High Power Density 0.5W Laser Diode Description The SLD322XT is a high power, gain-guided laser diode produced by MOCVD m ethod*1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be


    OCR Scan     		PDF SLD322XT SLD322XT SLD300