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Abstract: IRF7422D2
Text: Previous Datasheet Index Next Data Sheet PD 9.1412 IRF7422D2 PRELIMINARY FETKY TM MOSFET & Schottky Diode l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications Generation V Technology SO-8 Footprint A A S G 1 8
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IRF7422D2
Combinining40
10.00 ju
IRF7422D2
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IRF7422D2
Abstract: No abstract text available
Text: PD 9.1412 IRF7422D2 PRELIMINARY FETKY TM MOSFET & Schottky Diode l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications Generation V Technology SO-8 Footprint A A S G 1 8 2 7 3 6 4 5 A A D VDSS = -20V D RDS on = 0.09Ω
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IRF7422D2
IRF7422D2
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free transistor equivalent book 2sc
Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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X10679EJHV0SG00
free transistor equivalent book 2sc
uPA1556AH
The Japanese Transistor Manual 1981
samsung UHF/VHF TV Tuner
MOSFET cross-reference 2sk
PD431000A-X
upper arm digital sphygmomanometer circuit diagram
PD72001
uPC1237
uPC 2002
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FDA79N15
Abstract: No abstract text available
Text: TM FDA79N15 150V N-Channel MOSFET Features Description • 79A, 150V, RDS on = 0.03Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 56 nC)
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FDA79N15
FDA79N15
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79a diode
Abstract: 150V n-channel MOSFET D 3410 A FDA79N15
Text: TM FDA79N15 150V N-Channel MOSFET Features Description • 79A, 150V, RDS on = 0.03Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 56 nC)
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FDA79N15
79a diode
150V n-channel MOSFET
D 3410 A
FDA79N15
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FDPF79N15
Abstract: FDP79N15
Text: UniFET TM FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 79A, 150V, RDS on = 0.03Ω @VGS = 10 V
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FDP79N15
FDPF79N15
O-220
FDPF79N15
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FDP79N15
Abstract: FDPF79N15
Text: UniFET TM FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 79A, 150V, RDS on = 0.03Ω @VGS = 10 V
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FDP79N15
FDPF79N15
O-220
FDPF79N15
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79a diode
Abstract: diode 79A VPS05163 W301
Text: BAS 79A . BAS 79D Silicon Switching Diodes • Switching applications 4 • High breakdown voltage • Common cathode 3 2 1 2, 4 1 VPS05163 3 EHA00005 Type Marking Pin Configuration Package BAS 79A BAS 79A 1 = A1 2=C1/2 3 = A2 4=C1/2 SOT-223 BAS 79B BAS 79B
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VPS05163
EHA00005
OT-223
100ns,
EHN00021
Oct-07-1999
EHB00049
79a diode
diode 79A
VPS05163
W301
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BAS79A
Abstract: BAS79B BAS79C BAS79D VPS05163 Marking 2c1
Text: BAS79A.BAS79D Silicon Switching Diodes Switching applications 4 High breakdown voltage Common cathode 3 2 1 2, 4 1 VPS05163 3 EHA00005 Type Marking Pin Configuration BAS79A BAS 79A 1 = A1 2=C1/2 3 = A2 BAS79B BAS 79B 1 = A1 2=C1/2 3 = A2 BAS79C BAS 79C
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BAS79A.
BAS79D
VPS05163
EHA00005
BAS79A
BAS79B
BAS79C
OT223
BAS79A
BAS79B
BAS79C
BAS79D
VPS05163
Marking 2c1
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79a diode
Abstract: marking A1 SOT89 MARKING a1 d sot 89 a2 sot-89 w351 Marking gg SOT89
Text: BAW 79A . BAW 79D Silicon Switching Diodes 1 • Switching applications 2 • High breakdown voltage 3 • Common cathode 2 VPS05162 2 1 3 EHA07003 Type Marking Pin Configuration Package BAW 79A GE 1 = A1 2 = C1/2 3 = A2 SOT-89 BAW 79B GF 1 = A1 2 = C1/2
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VPS05162
EHA07003
OT-89
EHB00098
EHB00099
EHB00100
EHB00101
79a diode
marking A1 SOT89
MARKING a1 d sot 89
a2 sot-89
w351
Marking gg SOT89
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Untitled
Abstract: No abstract text available
Text: FDB2532 / FDP2532 / FDI2532 N-Channel PowerTrench MOSFET 150V, 79A, 16mΩ Features Applications • r DS ON = 14mΩ (Typ.), VGS = 10V, ID = 33A • DC/DC converters and Off-Line UPS • Qg(tot) = 82nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDB2532
FDP2532
FDI2532
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FDP2532 Mosfet
Abstract: No abstract text available
Text: FDB2532 / FDP2532 N-Channel UltraFET Trench MOSFET 150V, 79A, 16mΩ Features Applications • r DS ON = 14mΩ (Typ.), VGS = 10V, ID = 33A • DC/DC converters and Off-Line UPS • Qg(tot) = 86nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDB2532
FDP2532
FDP2532 Mosfet
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FDP2532
Abstract: FDB2532 marking 33a on semiconductor FDI2532 an7517
Text: FDB2532 / FDP2532 / FDI2532 N-Channel PowerTrench MOSFET 150V, 79A, 16mΩ Features Applications • r DS ON = 14mΩ (Typ.), VGS = 10V, ID = 33A • DC/DC converters and Off-Line UPS • Qg(tot) = 82nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDB2532
FDP2532
FDI2532
marking 33a on semiconductor
FDI2532
an7517
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leadframe Cu C194
Abstract: No abstract text available
Text: PD - 9.1412G International IGR Rectifier IRF7422D2 FETKY MOSFET and Schottky Diode • • • • Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications Generation 5 Technology SO-8 Footprint VDSS = -20V Rds oh = 0.09Q
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1412G
IRF7422D2
C-198
leadframe Cu C194
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smd CODE 3Gs
Abstract: smd diode schottky code marking 2F SMD DIODE marking AB Schottky
Text: International IOR Rectifier pd-9.mi2b IRF7422D2 PRELIMINARY FETKY M OSFET and Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • Ideal For Buck Regulator Applications • Generation 5 T echnology • SO-8 Footprint Vdss = -20V R DS on =
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IRF7422D2
smd CODE 3Gs
smd diode schottky code marking 2F
SMD DIODE marking AB Schottky
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Untitled
Abstract: No abstract text available
Text: International 1QR Rectifier PD-9.1412G IR F 7 4 2 2 D 2 PRELIMINARY FETKY MOSFET & Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • Ideal For Buck Regulator Applications • Generation V Technology • SO-8 Footprint V dss = R DS on =
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Untitled
Abstract: No abstract text available
Text: International 1QR Rectifier PD-9.1412H IR F 7 4 2 2 D 2 PRELIMINARY FETKY MOSFET & Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • Ideal For Buck Regulator Applications • Generation V Technology • SO-8 Footprint V dss = R DS on =
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Smd code S08
Abstract: smd diode schottky code marking 2F
Text: International pd-9.i 4i 2C IwR Rectifier preliminary IR F 7 4 2 2 D 2 FETKY M OSFET & Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • Ideal For Buck Regulator Applications • Generation V Technology • SO-8 Footprint a rrr-
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w iw 14
Abstract: No abstract text available
Text: In te rn a tio n a l p d - s.m i z f 1QR Rectifier IR F 7 4 2 2 D 2 PRELIMINARY FETKY MOSFET & Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • Ideal For Buck Regulator Applications • Generation V Technology • SO-8 Footprint
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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HOA2498-001
Abstract: No abstract text available
Text: HOA2498 Reflective Sensor DESCRIPTION The HOA2498 series consists of an infrared emitting diode and an NPN silicon phototransistor HOA2498-001, -002 or photodarlington (HOA2498-003), encased side-by-side on converging optical axes in a black thermoplastic housing. The
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HOA2498
HOA2498-001,
HOA2498-003)
SE1450,
SD1440,
SD1410.
455ifl3Ã
HOA2498-001
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Untitled
Abstract: No abstract text available
Text: SIEMENS SITAC AC Switches B R T11 B R T12 BRT 13 AC switch w ith ou t zero-voltage d e te cto r con sistin g o f two e le ctrica lly insulated lateral pow er ICs w hich integrate a th y ris to r system, a photo d e tector and noise suppression at the o u tput and an IR GaAs diode at the input.
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0884-app
E52744)
BRT11
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ba sot223
Abstract: ba sot89 DS410
Text: SILICON PLANAR DUAL HIGH VOLTAGE SWITCHING DIODES IN SOT89 AND SOT223 PACKAGES BAS79A-D SOT223 BAW79A-D (SOT89) PARTM ARKING DETAIL BA W 79A - GE B A W 7 9 B -G F BAW 79C - GG BAW 79D - GH BAS79A 1 BA S79A \ DEVICE TYPE IN B A S79A I FULL B A S79A I ABSOLUTE MAXIMUM RATINGS
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OT223
BAS79A
BAS79A-D
OT223)
BAW79A-D
BAW79A
BAW79B
BAS79B
ba sot223
ba sot89
DS410
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LE 79A
Abstract: diode MARKING CODE 917 a915 BAS79D
Text: Silicon Switching Diodes BAS 79A. BAS 79D • Switching applications • High breakdown voltage • Common cathode T yp e Marking BAS 79A BAS79B O rdering code 12 -m m tape Package* BAS79A Q62702 - A914 SOT-223 BAS79B Q62702 - A915 SOT-223 BAS79C BAS79C
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BAS79B
BAS79C
BAS79D
BAS79A
Q62702
LE 79A
diode MARKING CODE 917
a915
BAS79D
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