10 AMP 1200V RECTIFIER DIODE
Abstract: 600V 25A Ultrafast Diode 1200v diode to247 ultrafast diode 10a 300v smps 450W ULTRA fast rectifier diode 30A 200V cathode common ULTRA fast rectifier diode 30A 200V anode common 1200v 30A to247 Diode C3 1200v 25A to247
Text: SML25EUZ06B Enhanced Ultrafast Recovery Diode 600 Volt, 25 Amp Back of Case Cathode TECHNOLOGY The planar passivated and enhanced ultrafast recovery SML 25EUZ06B diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with
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SML25EUZ06B
25EUZ06B
SML30SUZ03S
SML30SUZ03SC
SML30SUZ12B
SML30SUZ12BC
SML30SUZ12JD
SML30SUZ12S
SML30SUZ12TC
OT227
10 AMP 1200V RECTIFIER DIODE
600V 25A Ultrafast Diode
1200v diode to247
ultrafast diode 10a 300v
smps 450W
ULTRA fast rectifier diode 30A 200V cathode common
ULTRA fast rectifier diode 30A 200V anode common
1200v 30A to247
Diode C3
1200v 25A to247
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IR 1838 T
Abstract: B120 HFA06TB120 HFA16TB120 IRFP250
Text: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing
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PD-95740
HFA16TB120PbF
260nC
HFA16TB120
12-Mar-07
IR 1838 T
B120
HFA06TB120
IRFP250
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IR 1838 3v
Abstract: IR 1838 HFA16PB120 CECC40101
Text: PD -2.364A HFA16PB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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HFA16PB120
260nC
HFA16PB120
IR 1838 3v
IR 1838
CECC40101
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IR 1838
Abstract: IRFP250 datasheet B120 HFA06TB120 HFA16TB120 IRFP250
Text: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing
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PD-95740
HFA16TB120PbF
260nC
HFA16TB120
HFA06TB120
IR 1838
IRFP250 datasheet
B120
HFA06TB120
IRFP250
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Untitled
Abstract: No abstract text available
Text: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing
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PD-95740
HFA16TB120PbF
260nC
HFA16TB120
08-Mar-07
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HFA16TB120
Abstract: HFA16TB120S IRFP250 SMD-220
Text: Bulletin PD -20605A rev. B 10/05 HFA16TB120S HEXFRED Ultrafast, Soft Recovery Diode TM K Features BASE + 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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-20605A
HFA16TB120S
260nC
HFA16TB120S
12-Mar-07
HFA16TB120
IRFP250
SMD-220
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HFA16PB120
Abstract: IRFP250 HFA16PB120PBF transistor IRFP250
Text: PD - 95683A HFA16PB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 4 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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5683A
HFA16PB120PbF
260nC
HFA16PB120
O-247AC
IRFP250
HFA16PB120PBF
transistor IRFP250
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Untitled
Abstract: No abstract text available
Text: PD - 95683A HFA16PB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 4 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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5683A
HFA16PB120PbF
260nC
HFA16PB120
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: Bulletin PD -20605A rev. B 10/05 HFA16TB120S HEXFRED Ultrafast, Soft Recovery Diode TM K Features BASE + 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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-20605A
HFA16TB120S
260nC
HFA16TB120S
08-Mar-07
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HFA16PB120
Abstract: IRFP250 IR 1838 1838 ir
Text: PD - 95683A HFA16PB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 4 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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5683A
HFA16PB120PbF
260nC
HFA16PB120
12-Mar-07
IRFP250
IR 1838
1838 ir
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vs 1838 b
Abstract: HFA16TB120 HFA16TB120S IRFP250 SMD-220
Text: Bulletin PD -20605A rev. B 10/05 HFA16TB120S HEXFRED Ultrafast, Soft Recovery Diode TM K Features BASE + 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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-20605A
HFA16TB120S
260nC
HFA16TB120S
SMD-220
vs 1838 b
HFA16TB120
IRFP250
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Untitled
Abstract: No abstract text available
Text: PD - 95683 HFA16PB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 4 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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HFA16PB120PbF
260nC
HFA16PB120
O-247AC
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Untitled
Abstract: No abstract text available
Text: B6U-MDD26/14 PS260/180B 76Amp three phase diode rectifier assembly Features: • • • • Isolated module solution DC Link busbars Aluminium heatsink mounted Naturally air cooled Characteristics: Symbol Idc Vrms Tamb Tstg Parameter Output DC current rating
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B6U-MDD26/14
PS260/180B
76Amp
ECL020045
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SCS120AG
Abstract: No abstract text available
Text: TYPE PRODUCTS TO-220AC 2L PAGE SCS120AG 1.TYPE SCS120AG 2.STRUCTURE SILICON CARBIDE EPITAXIAL PLANER SCHOTTKY BARRIER DIODE 3.APPLICATIONS GENERAL RECTIFICATION 4.ABSOLUTE MAXIMUM RATINGS 1/3 [Tj =25oC unless otherwise specified] REVERSE VOLTAGE REPETITIVE PEAK
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O-220AC
SCS120AG
SCS120AG
125oC,
150oC
55150oC
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welder mosfet 150a 50v
Abstract: CMI-4H054
Text: COMPOSITE MODULES INCORPORATED PRELIMINARY POWER MOSFET MODULE CMI-4H054Features: u u u u u u SMALL CASE SIZE HIGH INPUT IMPEDANCE ISOLATED PACKAGE LOW RDSON FAST SWITCHING DIODE HIGH CURRENT CAPABILITY Description: The CMI-4H054 consists of 4 paralled 60 Volt
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CMI-4H054Features:
CMI-4H054
240AA
welder mosfet 150a 50v
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Untitled
Abstract: No abstract text available
Text: Bulletin PD -2.364 rev. B 11/00 HFA16PB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 2.3V 4
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HFA16PB120
260nC
HFA16PB120
08-Mar-07
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IR 1838 T
Abstract: IR 1838 IR 1838 3v HFA16PB120 IRFP250 vs 1838 b
Text: Bulletin PD -2.364 rev. B 11/00 HFA16PB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 2.3V 4
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HFA16PB120
260nC
HFA16PB120
IR 1838 T
IR 1838
IR 1838 3v
IRFP250
vs 1838 b
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A1874
Abstract: ENA1874A
Text: Ordering number : ENA1874A SFT1350 P-Channel Power MOSFET http://onsemi.com –40V, –19A, 59mΩ, Single TP/TP-FA Features • • ON-resistance RDS on 1=45mΩ(typ.) Halogen free compliance • • Input Capacitance Ciss=590pF(typ.) Protection diode in •
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ENA1874A
SFT1350
590pF
PW10s)
PW10s,
A1874-9/9
A1874
ENA1874A
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IR 1838 T
Abstract: IR 1838 3v 9307-1 HFA16PB120 IRFP250 IR 1838 T transistor D207 VISHAY transistor 2364
Text: Bulletin PD -2.364 rev. B 11/00 HFA16PB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 2.3V 4
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HFA16PB120
260nC
HFA16PB120
12-Mar-07
IR 1838 T
IR 1838 3v
9307-1
IRFP250
IR 1838 T transistor
D207 VISHAY
transistor 2364
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IR 1838 T
Abstract: smd TRANSISTOR code marking 2F SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD MARKING CODE kh HFA16TB120 HFA16TB120S IRFP250 SMD-220 transistor smd code marking 420 TRANSISTOR SMD MARKING CODE 2F
Text: Bulletin PD -20605 rev. B 11/00 HFA16TB120S HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • VR = 1200V VF typ. * = 2.3V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits
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HFA16TB120S
260nC
HFA16TB120S
IR 1838 T
smd TRANSISTOR code marking 2F
SMD TRANSISTOR MARKING 9bb
TRANSISTOR SMD MARKING CODE kh
HFA16TB120
IRFP250
SMD-220
transistor smd code marking 420
TRANSISTOR SMD MARKING CODE 2F
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9936 transistor
Abstract: IR 1838 T IR 1838 3v diode 838 HFA16TB120 IRFP250 IR 1838
Text: Bulletin PD -2.492 rev. A 11/00 HFA16TB120 HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • VR = 1200V VF typ. * = 2.3V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits
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HFA16TB120
260nC
HFA16TB120
9936 transistor
IR 1838 T
IR 1838 3v
diode 838
IRFP250
IR 1838
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IR 1838 3v
Abstract: IR 1838 irm 1838 DIODE 76A HFA16TB120
Text: Preliminary Data Sheet PD -2.492 05/97 HFA16TB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI
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HFA16TB120
260nC
HFA16TB120
IR 1838 3v
IR 1838
irm 1838
DIODE 76A
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Untitled
Abstract: No abstract text available
Text: Bulletin PD -2.492 rev. B 09/02 HFA16TB120 HEXFRED TM Ultrafast, Soft Recovery Diode BASE CATHODE Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits 4 2 1 • Reduced RFI and EMI
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HFA16TB120
260nC
HFA16TB120
08-Mar-07
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IR 1838 T
Abstract: 1838 t
Text: International TOR Rectifier HEXFRED1 Preliminary Data Sheet PD-2.605 05/97 HFA16TB120S Ultrafast, Soft Recovery Diode Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very LowQrr Guaranteed Avalanche Specified at Operating Conditions
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OCR Scan
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PDF
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HFA16TB120S
260nC
HFA16TB120S
IR 1838 T
1838 t
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