tms44c256
Abstract: SMALL SIGNAL SCHOTTKY DIODE "Schottky Diode" diode arrays line following CIRCUIT Schottky Diode 74AC11240 SN74S1050 TMS4256
Text: EB194E Schottky Diode Arrays EB194E SCHOTTKY DIODE ARRAYS Author: Eilhard Haseloff Date: October 10th, 1990 Rev.: A Revised August 30th, 1995 1 Applikationslabor EB194E Schottky Diode Arrays The trend towards faster and faster systems means that the circuit designer has to
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EB194E
tms44c256
SMALL SIGNAL SCHOTTKY DIODE
"Schottky Diode"
diode arrays
line following CIRCUIT
Schottky Diode
74AC11240
SN74S1050
TMS4256
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IRF7353D1
Abstract: No abstract text available
Text: PD - 91802B IRF7353D1 FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode ● Ideal For Buck Regulator Applications ● N-Channel HEXFET ● Low VF Schottky Rectifier ● Generation 5 Technology ● SO-8 Footprint Description
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91802B
IRF7353D1
IRF7353D1
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91802A
Abstract: IRF7353D1
Text: PD- 91802A IRF7353D1 FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode ● Ideal For Buck Regulator Applications ● N-Channel HEXFET ● Low VF Schottky Rectifier ● Generation 5 Technology ● SO-8 Footprint Description
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1802A
IRF7353D1
91802A
IRF7353D1
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BC647
Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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MMBD4148
200MA
OT-23
MBR0540
OD-123
1000MA
DO-214AC
B340A
5245B
225MW
BC647
bc657
C1093
smd diode c644
DIODE SMD c336
BC679
BC625
smd diode C645
smd diode c640
smd diode R645
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77C7
Abstract: 887c 1r12r
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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R222 smd
Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Text: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP
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CA-001175
BA41-00418A
BA62-00194A
BA62-00306A
BA68-40005L
120OHM
143OHM/132MHZ
213OHM/390MHZ,
R222 smd
RA516-1
2007-000162
RA523-1
C627 SOT-23
smd R540
63MIL
d516 gp
SMD R618
SMD C548
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P65 MOSFET
Abstract: IRF7353D2
Text: PD- 93809 IRF7353D2 FETKY MOSFET / Schottky Diode ● ● ● ● ● ● Co-Pack HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint
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IRF7353D2
7353d2
P65 MOSFET
IRF7353D2
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Untitled
Abstract: No abstract text available
Text: PD - 95251A IRF7353D1PbF l l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint Lead-Free FETKYä MOSFET / Schottky Diode A
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5251A
IRF7353D1PbF
EIA-481
EIA-541.
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EIA-541
Abstract: IRF7353D1 IRF7807D1 MARKING CODE SO-8
Text: PD - 91802C IRF7353D1 FETKYä MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode l Ideal For Buck Regulator Applications l N-Channel HEXFET l Low VF Schottky Rectifier l Generation 5 Technology l SO-8 Footprint Description l A A S
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91802C
IRF7353D1
EIA-481
EIA-541.
EIA-541
IRF7353D1
IRF7807D1
MARKING CODE SO-8
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samsung r540
Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Text: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP
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ZD500
QF500
RHU002N06
200MA
OT-323
F820P
33x33mm
500MHz
K4J52324QC
512Mbit
samsung r540
Samsung R590
R721-R725
C732 SMD
10000NF
R616 R617
R714-R715
samsung r580
b16 r649
Smd q535
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Untitled
Abstract: No abstract text available
Text: PD - 91802C IRF7353D1 FETKYä MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode l Ideal For Buck Regulator Applications l N-Channel HEXFET l Low VF Schottky Rectifier l Generation 5 Technology l SO-8 Footprint Description l A A S
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91802C
IRF7353D1
EIA-481
EIA-541.
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EIA-541
Abstract: IRF7807D1
Text: PD - 95251A IRF7353D1PbF l l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint Lead-Free FETKYä MOSFET / Schottky Diode A
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5251A
IRF7353D1PbF
EIA-481
EIA-541.
EIA-541
IRF7807D1
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EIA-541
Abstract: IRF7807D1 IRF7353D2PBF
Text: PD- 95215A IRF7353D2PbF l l l l l l l Co-Pack HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint Lead-Free FETKYä MOSFET / Schottky Diode
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5215A
IRF7353D2PbF
EIA-481
EIA-541.
EIA-541
IRF7807D1
IRF7353D2PBF
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EIA-541
Abstract: No abstract text available
Text: PD-96073A IRF7353D2UPbF FETKYä MOSFET / Schottky Diode l Co-Pack HEXFET Power MOSFET and Schottky Diode l Ideal For Buck Regulator Applications l N-Channel HEXFET power MOSFET l Low VF Schottky Rectifier l Generation 5 Technology l SO-8 Footprint l Lead-Free
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PD-96073A
IRF7353D2UPbF
EIA-481
EIA-541.
EIA-541
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Untitled
Abstract: No abstract text available
Text: PD- 95215A IRF7353D2PbF l l l l l l l Co-Pack HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint Lead-Free FETKYä MOSFET / Schottky Diode
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5215A
IRF7353D2PbF
EIA-481
EIA-541.
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PDF
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Untitled
Abstract: No abstract text available
Text: PD- 95215 IRF7353D2PbF l l l l l l l Co-Pack HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint Lead-Free FETKYä MOSFET / Schottky Diode
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IRF7353D2PbF
EIA-481
EIA-541.
IRF7353D2PbF
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Untitled
Abstract: No abstract text available
Text: PD- 93809A IRF7353D2 FETKYä MOSFET / Schottky Diode n n n n n n Co-Pack HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1
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3809A
IRF7353D2
EIA-481
EIA-541.
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EIA-541
Abstract: IRF7353D2 IRF7807D1
Text: PD- 93809A IRF7353D2 FETKYä MOSFET / Schottky Diode O O O O O O Co-Pack HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1
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3809A
IRF7353D2
EIA-481
EIA-541.
EIA-541
IRF7353D2
IRF7807D1
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smd diode marking U1
Abstract: RF 98 marking smd 74ACT540 SWX-01 SWX-02 SWX-03 SWX-04 SWX-05 capacitors smd ghz
Text: HIGH ISOLATION–SURFACE MOUNT PIN DIODE SWITCHES MODULES SERIES SWX 0.2–2.4GHz FEATURES • Full Cellular Frequency Coverage: 200–2400 MHz (Ideal for PCS Applications) • Thick Film Hybrid Circuitry Sealed in Rugged Ceramic “Surfpac” Packages • Silicon PIN Diode Design is More Robust and ESD Safe than GaAs
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74ACT540
SWX-02
SWX-03
smd diode marking U1
RF 98 marking smd
74ACT540
SWX-01
SWX-02
SWX-03
SWX-04
SWX-05
capacitors smd ghz
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diode sg 64
Abstract: SG5774AJ SG5772J SG25768 sf 819 d 1N5772 JANTX 1N5768 SG25770J
Text: , SG5768/68A SG5770/70A, SG5772/72A, SG5774/74A SG25768, SG25770, SG6496/96A DIODE ARRAY CIRCUITS SILICON GENERAL LINEAR IN TEGRATED CIRCUITS DESCRIPTION FEATURES The Silicon General series of diode arrays feature high breakdown, high speed diodes in a variety of configurations.
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SG5768/68A
SG5770/70A,
SG5772/72A,
SG5774/74A
SG25768,
SG25770,
SG6496/96A
500mA
14-PIN
diode sg 64
SG5774AJ
SG5772J
SG25768
sf 819 d
1N5772 JANTX
1N5768
SG25770J
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Untitled
Abstract: No abstract text available
Text: FMJ1A Transistor, digital, PNP, integral diode Features Dimensions Units: mm • available in an SMT5 (FMT, SC-74A) package • package marking: J1 • package includes a digital PN P transistor (DTA144EKA) and a connected diode • same size as SMT3 (SMT, SC-59), so
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SC-74A)
DTA144EKA)
SC-59)
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Diode T148
Abstract: transistor 667 transistor D 667 DTA144EKA T148 marking J1
Text: FM J 1 A Transistor, digital, PNP, integral diode Features Dimensions U n its: mm • available in an SM T 5 (FMT, SC-74A) package package marking: J1 • package includes a digital PN P transistor (DTA144EKA) and a connected diode • 2.9 ± 0.2 1.9 ± 0.2
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SC-74A)
DTA144EKA)
SC-59)
47kfl
-100nA
-10mA/-5mA
100ns
Diode T148
transistor 667
transistor D 667
DTA144EKA
T148
marking J1
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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SWX-02
Abstract: No abstract text available
Text: HIGH ISOLATION-SURFACE MOUNT PIN DIODE SWITCHES SWX SERIES 0.2-2.4 GHz FEATURES • Fuil Cellular Frequency Coverage: 200-2400 MHz Ideal for PCS Applications • Thick Film Hybrid Circuitry Sealed in Rugged Ceramic “Surfpac” Packages • Silicon PIN Diode Design is More Robust and ESD Safe than GaAs
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OCR Scan
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74ACT540
SWX-02
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