BAP51-02
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Preliminary specification 1999 Jun 28 Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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M3D319
BAP51-02
OD523
MAM405
OD523)
125004/00/02/pp6
BAP51-02
BP317
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DIODE A6 sod110
Abstract: sod110 package SOD-110 BA792 philips zener diode SOD110 BAS216 BAS221 BAT254 Zener Diode MARK 101 SOD323
Text: Philips Semiconductors Comprehensive diode range: • Zener diodes • Schottky-barrier diode • Switching diodes • Band-switching diode SOD110 High-performance ceramic package www.semiconductors.philips.com V-packTM technology for higher power dissipation
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OD110
OD110
innovat27
SCB63
DIODE A6 sod110
sod110 package
SOD-110
BA792
philips zener diode
SOD110
BAS216
BAS221
BAT254
Zener Diode MARK 101 SOD323
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BA792
Abstract: top mark smd Philips Diode smd code 805 SMD MARKING 541 DIODE 279-27 smd diode marking kda marking code kda smd code marking 777 smd diode marking 77 S4 SMD diode mark
Text: DISCRETE SEMICONDUCTORS DATA SHEET BA792 Band-switching diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance:
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BA792
MAM139
OD110)
OD110
SCDS47
117021/1100/01/pp8
BA792
top mark smd Philips
Diode smd code 805
SMD MARKING 541 DIODE
279-27
smd diode marking kda
marking code kda
smd code marking 777
smd diode marking 77
S4 SMD diode mark
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Untitled
Abstract: No abstract text available
Text: R9XSMD0475XX WELDING DIODE ELEMENT Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697-1800 724 925-7272 www.pwrx.com 7450 Amperes 400 Volts 3.6mm 1.2mm Deep 5mm RTV Sealant 49.2mm Cathode Contact Anode Contact 56mm Powerex General Purpose Rectifier Diode
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R9XSMD0475XX
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Untitled
Abstract: No abstract text available
Text: R9XSMD0475XX WELDING DIODE ELEMENT Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697-1800 724 925-7272 www.pwrx.com 7450 Amperes 400 Volts Φ 3.6mm 1.2mm Deep 5mm RTV Sealant 49.2mm Cathode Contact Anode Contact 56mm Powerex General Purpose Rectifier Diode
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R9XSMD0475XX
INFORMATIO12000
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SMD MARKING 541 DIODE
Abstract: smd diode 708 BA792 Diode smd code 805 SOD110 S4 SMD diode mark MCC SMD DIODE SMD MARK CODE s4 BP317 diode marking code 777
Text: DISCRETE SEMICONDUCTORS DATA SHEET L8 book, halfpage M3D178 BA792 Band-switching diode Product specification 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance: max. 1.1 pF
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M3D178
BA792
MAM139
OD110)
OD110
SCDS47
113061/1100/01/pp8
SMD MARKING 541 DIODE
smd diode 708
BA792
Diode smd code 805
SOD110
S4 SMD diode mark
MCC SMD DIODE
SMD MARK CODE s4
BP317
diode marking code 777
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smd code marking A8 diode
Abstract: smd diode A8 smd diode code a8
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D049 BAP50-03 General purpose PIN diode Product specification Supersedes data of 1999 Feb 01 1999 May 10 Philips Semiconductors Product specification General purpose PIN diode BAP50-03 FEATURES PINNING • Low diode capacitance
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M3D049
BAP50-03
OD323
MAM406
OD323)
125004/00/02/pp8
smd code marking A8 diode
smd diode A8
smd diode code a8
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BAP51-03
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D049 BAP51-03 General purpose PIN diode Product specification Supersedes data of 1999 May 10 1999 Aug 16 Philips Semiconductors Product specification General purpose PIN diode BAP51-03 FEATURES PINNING • Low diode capacitance
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M3D049
BAP51-03
OD323
MAM406
OD323)
115002/03/pp8
BAP51-03
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB10 Schottky barrier diode Product specification 1998 Jul 16 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB10 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SC-79 ultra small plastic SMD
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M3D319
1PS79SB10
SC-79
MAM403
SC-79)
SCA60
115104/00/01/pp8
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smd schottky diode marking 72
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D049 1PS76SB70 Schottky barrier diode Product specification 1998 Jul 16 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB70 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD323 very small plastic
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M3D049
1PS76SB70
OD323
MAM283
OD323)
SCA60
115104/00/01/pp8
smd schottky diode marking 72
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NEC JAPAN 567
Abstract: NX8563LF PX10160E
Text: DATA SHEET LASER DIODE NX8563LF 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563LF is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain
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NX8563LF
NX8563LF
NEC JAPAN 567
PX10160E
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str 6707
Abstract: BP317 Diode smd code 805 SMD 2211 smd schottky diode marking 72 BAT254
Text: DISCRETE SEMICONDUCTORS DATA SHEET L4 dbook, halfpage M3D177 BAT254 Schottky barrier diode Product specification 1996 Mar 19 Philips Semiconductors Product specification Schottky barrier diode BAT254 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD110 very small ceramic
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M3D177
BAT254
BAT254
OD110
MAM214
OD110)
SCDS48
117021/1100/01/pp8
str 6707
BP317
Diode smd code 805
SMD 2211
smd schottky diode marking 72
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1PS59SB20
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET age M3D114 1PS59SB20 Schottky barrier diode Product specification 1998 Jul 28 Philips Semiconductors Product specification Schottky barrier diode 1PS59SB20 FEATURES DESCRIPTION • Ultra fast switching speed Planar Schottky barrier diode with an integrated guard ring for stress protection
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M3D114
1PS59SB20
SC-59
MLC357
MSA314
SCA60
115104/00/01/pp8
1PS59SB20
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601 Opto isolator
Abstract: NX8563LF PX10160E
Text: LASER DIODE NX8563LF 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563LF is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain Fiber (PMF).
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NX8563LF
NX8563LF
601 Opto isolator
PX10160E
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NX8570SD
Abstract: 409d 766d ETALON 362d TLD 521 315D 346D 377D 967D
Text: LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8570
NX8570SD
409d
766d
ETALON
362d
TLD 521
315D
346D
377D
967D
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1583 Series
Abstract: 362d 766d
Text: LASER DIODE NX8571 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8571
1583 Series
362d
766d
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ingaasp
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX8562LF 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8562LF is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain
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NX8562LF
NX8562LF
ingaasp
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continuous wave light source for dwdm system
Abstract: NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8563 NX8563LB NX8563LF 10 gb laser diode
Text: DATA SHEET LASER DIODE NX8563 Series 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain
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NX8563
continuous wave light source for dwdm system
NX8300BE-CC
NX8300CE-CC
NX8303BG-CC
NX8303CG-CC
NX8304BE-CC
NX8563LB
NX8563LF
10 gb laser diode
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NX8300BE-CC
Abstract: NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8562LB NX8562LF 10 gb laser diode NEC 6109 SERIES continuous wave light source for dwdm system
Text: DATA SHEET LASER DIODE NX8562 Series 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8562 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization
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NX8562
NX8300BE-CC
NX8300CE-CC
NX8303BG-CC
NX8303CG-CC
NX8304BE-CC
NX8562LB
NX8562LF
10 gb laser diode
NEC 6109 SERIES
continuous wave light source for dwdm system
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362d
Abstract: 601 Opto isolator 766d transistor NEC D 587 315D 346D 377D 409D
Text: DATA SHEET LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8570
362d
601 Opto isolator
766d
transistor NEC D 587
315D
346D
377D
409D
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362d
Abstract: 315D 346D 377D NX8570SA b 803 a NX8570SD 933D 618D
Text: DATA SHEET LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8570
362d
315D
346D
377D
NX8570SA
b 803 a
NX8570SD
933D
618D
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triac tic 236
Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
Text: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD
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1S2835
1S2836
1S2837
1S2838
1SS123
1SS220
1SS221
1SS222
1SS223
2SA811A
triac tic 236
SCR U 537
MP25 transistor
transistor su 312
GA1L32
3 pin mini mold transistor
2SJ19
FA114M
2SA1611
Z 103 TRIAC
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SMD diode sg 46
Abstract: SMD diode sg 03
Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP50-03 PINNING FEATURES • Low diode capacitance PIN • Low diode forw ard resistance. DESCRIPTION 1 cathode 2 anode APPLICATIONS
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BAP50-03
SCA61
SMD diode sg 46
SMD diode sg 03
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diode a62
Abstract: BAP51-03 diode smd ED 74 lm 9805
Text: DISCRETE SEMICONDUCTORS PÂTÂ SHEET BAP51 -03 General purpose PIN-diode Preliminary specification Philips Sem iconductors 1999 Mar 30 PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP51-03 PINNING FEATURES • Low diode capacitance
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BAP51
BAP51-03
diode a62
BAP51-03
diode smd ED 74
lm 9805
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