marking SA
Abstract: No abstract text available
Text: Ordering number : ENN7029 SBS806M Schottky Barrier Diode SBS806M 30V, 0.5A Rectifier Applications Package Dimensions unit : mm 1310 • 2.1 3 2 1 0.65 5 2.0 4 1 : Anode Diode 1 2 : No Contact 3 : Anode (Diode 2) 4 : Cathode (Diode 2) 5 : Cathode (Diode 1)
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ENN7029
SBS806M
SBS806M
SBS006.
SBS806M]
marking SA
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN7029 SBS806M Schottky Barrier Diode SBS806M 30V, 0.5A Rectifier Applications Package Dimensions unit : mm 1310 • 2.1 3 2 1 0.65 5 2.0 4 1 : Anode Diode 1 2 : No Contact 3 : Anode (Diode 2) 4 : Cathode (Diode 2) 5 : Cathode (Diode 1)
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ENN7029
SBS806M
SBS806M]
SBS806M
SBS006.
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Untitled
Abstract: No abstract text available
Text: ar y n i im prel iC-HT DUAL CW LASER DIODE DRIVER Rev A1, Page 1/42 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Laser diode modules ♦ CW laser diode drivers ♦ Embedded laser diode controllers ♦ Safety related laser controllers
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QFN28
QFN28-5x5
D-55294
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Untitled
Abstract: No abstract text available
Text: Laser Diodes y inar m i l pre iC-HT DUAL CW LASER DIODE DRIVER FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ APPLICATIONS ♦ Laser diode modules ♦ CW laser diode drivers ♦ Embedded laser diode controllers ♦ Safety related laser controllers
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QFN28
QFN28-5x5
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BYV27 Spice
Abstract: BECKMAN transistor 702m BYV27 BYV27-200 85740
Text: VISHAY BYV27_Spice Vishay Semiconductors BYV27 Spice Parameters * Technology: DISCRETE DIODE * Device: Rectifier Diode BYV 27 200 * Model established: 04-95, by B. Beckmann, TM1iC63-HN + IS = 34p RS = 213m N = 1.117 IBV= 100p + CJO=114.7p VJ = 702m M = 385m FC = 500m
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BYV27
TM1iC63-HN
25-Nov-03
D-74025
BYV27 Spice
BECKMAN
transistor 702m
BYV27-200
85740
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Untitled
Abstract: No abstract text available
Text: ar y n i im prel iC-HT DUAL CW LASER DIODE DRIVER Rev B1, Page 1/45 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Laser diode and LED modules ♦ CW N-/M-type laser diode drivers ♦ Embedded laser diode
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QFN28
QFN28-5x5
D-55294
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et 1202
Abstract: M50D diode circuits
Text: Series M50 Diode 60-100Amp • DIODE Modules Single- and three-phase diode circuits incorporate highly efficient thermal management to provide high surge capability, extended life, and reliable performance. Available in five circuits, all models come in an industry standard
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E72445)
60-100Amp
120Vac)
240Vac)
380Vac)
et 1202
M50D
diode circuits
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Diode SJ 49 a
Abstract: Schematic/Diode SJ 49 a
Text: Series M50 Diode 60-100Amp • DIODE Modules Single- and three-phase diode circuits incorporate highly efficient thermal management to provide high surge capability, extended life, and reliable performance. Available in five circuits, all models come in an industry standard
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E72445)
60-100Amp
120Vac)
240Vac)
380Vac)
480Rev.
SJ/T11364
SJ/T11364
Diode SJ 49 a
Schematic/Diode SJ 49 a
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datasheet 100amp diode
Abstract: M50D E72445 TB-12
Text: Series M50 Diode 60-100Amp • DIODE Modules • High Surge Current Rectifier Circuits • Up to 1600 Volt Blocking Standard Single- and three-phase diode circuits incorporate highly efficient thermal management to provide high surge capability, extended life, and reliable
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60-100Amp
E72445)
datasheet 100amp diode
M50D
E72445
TB-12
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100 Amp current 1000 volt diode
Abstract: INTERNATIONAL DIODE CORP RECTIFIER CIRCUITS diode 1600 rectifier TB 2500 60 amp 600 Volt Diode M50D Type Transistors 702 E72445 1000 Amp current diode
Text: Series M50 Diode 60-100 Amp • DIODE Modules • High Surge Current Rectifier Circuits • Up to 1600 Volt Blocking Standard Single- and three-phase diode circuits incorporate highly efficient thermal management to provide high surge capability, extended life, and reliable
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E72445)
100 Amp current 1000 volt diode
INTERNATIONAL DIODE CORP
RECTIFIER CIRCUITS
diode 1600 rectifier
TB 2500
60 amp 600 Volt Diode
M50D
Type Transistors 702
E72445
1000 Amp current diode
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MPD2T5N200-702
Abstract: diode 702 1N4148 diode HBM
Text: PIN Diode Driver MPD2T5N200-702 Series Datasheet Features • Higher Output Voltage and Higher Output Current PIN Diode Driver in Surface Mount Package • Usable with MSW2060 Series Symmetrical High Power SP2T Switches. • Operates from 2 Polarities: +5V and -15V to -200 V
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MPD2T5N200-702
MSW2060
diode 702
1N4148 diode HBM
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d3s diode
Abstract: MPD2T5N200-702
Text: MPD2T5N200-702 Positive & Negative Voltage PIN Diode Driver Datasheet Features • High Output Voltage and High Output Current PIN Diode Driver in Surface Mount Package • Usable with MSW2060 Series Symmetrical High Power SP2T Switches • Operates from +5 V and -15 V to -200 V
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MPD2T5N200-702
MSW2060
d3s diode
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semiconductor
Abstract: hirect H507CH Hirect diode H400TB
Text: SEMICONDUCTOR DESIGN GUIDE Hind Rectifiers Ltd ISO 9001-2000 Contents Page no. ► Rectifier Diodes 1 Top Hat Type 2) Capsules and Fast Recovery Diode 3) Modules Isolated Base) a) Diode-Diode Modules b) Single Phase Bridge c) Three Phase Bridge 1 3 5 5 5
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Untitled
Abstract: No abstract text available
Text: iC-VJ, iC-VJZ LASER DIODE CONTROLLER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ Transmitter for laser light barriers from 1 to 200kHz ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ◊ ◊ Laser diode driver of up to 250mA Averaging control of laser power Protective functions to prevent destruction of laser diode
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200kHz
250mA
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Untitled
Abstract: No abstract text available
Text: RClamp7002M RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS - RailClamp Description Features RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The RClamp series has been specifically designed to protect sensitive
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RClampTM7002M
MSOP-10L
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DA573S6
Abstract: diode marking 4c a1383 A1383 transistor Marking 4c
Text: DA573S6 Ordering number : ENA1383 SANYO Semiconductors DATA SHEET DA573S6 Silicon Diffused Junction Type Diode ESD Protection Diode Features • • • Contact discharge 30kV guarantee IEC61000-4-2 . 6-pin package containing 5 devices. Halogen free compliance.
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DA573S6
ENA1383
IEC61000-4-2)
150pF,
A1383-4/4
DA573S6
diode marking 4c
a1383
A1383 transistor
Marking 4c
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marking 4A
Abstract: No abstract text available
Text: DA473S6 Ordering number : ENA1377 SANYO Semiconductors DATA SHEET DA473S6 Silicon Diffused Junction Type Diode ESD Protection Diode Features • • • Contact discharge 18kV guarantee IEC61000-4-2 . 6-pin package containing 4 devices. Halogen free compliance.
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DA473S6
ENA1377
IEC61000-4-2)
150pF,
A1377-4/4
marking 4A
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IN4003
Abstract: 1N4003A 175t2
Text: 7020^^^ GDOTGlb T03 iRHn Page ROHrn Speculation Products ] 01 Type Glass Sealed Rectifying Diode IN4003A Glass Sealed Rectifying Diode 1. PRODUCTS Silicon diffused junction 1N4003A 2. TYPE 3. APPLICATION General rectification 'Glass seal 4. FEATURES 'Snail size
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1N4003A
1N4003A
D0-41)
175t2
-65-175t
IN4003
175t2
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CL67
Abstract: 32MHz quartz RESONATOR 550KQ
Text: iC-VJ, iC-VJZ •Haus LASER DIODE CONTROLLER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ Laser diode driver up to 250mA Averaging control of laser power Protective functions to prevent destruction of laser diode Laser-current monitor with current or voltage output
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250mA
500/iA
CL67
32MHz quartz RESONATOR
550KQ
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ESC021M-15
Abstract: No abstract text available
Text: ESC021M-15 5 a FAST RECOVERY DIODE ' Features D am per diode for high definition TV and high resolution display. Dam per and modulater diode are jointed in a body. • W )tt\1W fibVkZtifc.7iV*-i\rY9'4'7 Insulated package by fully molding. m m m &m Connection Diagram
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ESC021M-15
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amd FX PIN LAYOUT
Abstract: G701
Text: iC-VJ, iC-VJZ if f if ll LASER DIODE CONTROLLER f e a ^ u ;b Ë ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 3 |^ Laser diode driver of up to 250mA Averaging control of laser power Protective functions to prevent destruction of laser diode
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200kHz
250mA
amd FX PIN LAYOUT
G701
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SIR34ST3
Abstract: No abstract text available
Text: MDE D ROHM CO LTD • 7020^*1 GOGbflb? 4 ■ RHM Page lu n ir n Specification Products Type [ ol ^ SIR-34ST3 SIR-34ST3 GaAs INFRARED EMITTING DIODE The SIR-34ST3 is a gallium arsenide infrared diode with transparent plastic encapsulation. The device is designed to accomodate needs of optical remote control
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SIR-34ST3
SIR-34ST3
950nm
T-41-11
SIR34ST3
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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a549
Abstract: ESC011M-15 ESC011 diode M15 A548 esc011m-15i5a
Text: ESC011M-15 5A FA ST RECOVERY DIODE : Features • Ki&ttTv, Dam per diode fo r high definition TV and high resolution display. • - 1i I/ - ^ ^ D am per and m odulater diode are jointed in a body. • m m m t f & m z n t z 7;p ^ - ju v w ? Insulated package by fully m olding.
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ESC011M-15I5A)
a549
ESC011M-15
ESC011
diode M15
A548
esc011m-15i5a
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