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    DIODE 6A 400V Search Results

    DIODE 6A 400V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 6A 400V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT6SC60K

    Abstract: APT6SC60SA
    Text: 1 2 D2PAK TO-220 1 - Cathode 2 - Anode Back of Case - Cathode 1 2 1 2 APT6SC60K APT6SC60SA 600V 600V 6A 6A SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier • Switching Losses Nearly


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    PDF O-220 APT6SC60K APT6SC60SA O-263 APT6SC60K APT6SC60SA

    g3n60c3d

    Abstract: HGT1S3N60C3D HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D
    Text: S E M I C O N D U C T O R HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Features Packaging JEDEC TO-220AB • 6A, 600V at TC = +25oC EMITTER COLLECTOR GATE • 600V Switching SOA Capability


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    PDF HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS O-220AB 130ns 150oC O-262AA g3n60c3d HGT1S3N60C3D HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D

    APT06DC60HJ

    Abstract: No abstract text available
    Text: APT06DC60HJ ISOTOP SiC Diode Full Bridge Power Module VRRM = 600V IC = 6A @ Tc = 100°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • SiC Schottky Diode - Zero reverse recovery


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    PDF APT06DC60HJ OT-227) APT06DC60HJ

    APT06DC60HJ

    Abstract: No abstract text available
    Text: APT06DC60HJ ISOTOP SiC Diode Full Bridge Power Module VRRM = 600V IC = 6A @ Tc = 100°C Application •    Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features     + ~ SiC Schottky Diode


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    PDF APT06DC60HJ OT-227) APT06DC60HJ

    HFA80NC40C

    Abstract: No abstract text available
    Text: PD -2.473 rev. B 01/99 HFA80NC40C TM Ultrafast, Soft Recovery Diode HEXFRED VR = 400V Features VF typ. ƒ = 1V • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters IF(AV) = 80A Qrr (typ.) = 200nC IRRM(typ.) = 6A


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    PDF HFA80NC40C 200nC HFA80NC40C

    Untitled

    Abstract: No abstract text available
    Text: CSD06060 Silicon Carbide Schottky Diode ZERO RECOVERY RECTIFIER VRRM=600V IF=6A _ Features Benefits • 600 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery


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    PDF CSD06060 CSD06060A CSD06060B CSD060ot CSD06060,

    SCS206AM

    Abstract: No abstract text available
    Text: SCS206AM Datasheet SiC Schottky Barrier Diode Outline VR 600V IF 6A QC 9nC TO-220FM 2 (1) Inner circuit Features 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Anode 3) High-speed switching possible (1) (2) Packaging specifications


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    PDF SCS206AM O-220FM R1102S SCS206AM

    Untitled

    Abstract: No abstract text available
    Text: CSD06060–Silicon Carbide Schottky Diode VRRM = 600V Zero Recovery Rectifier IF = 6A Qc = 17nC Features • • • • • • • Package 600 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior


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    PDF CSD06060â O-263-2 O-220-2 CSD06060

    Untitled

    Abstract: No abstract text available
    Text: SCS206AM Datasheet SiC Schottky Barrier Diode lOutline VR 650V IF 6A QC 9nC TO-220FM 2 (1) lFeatures lInner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Anode 3) High-speed switching possible (1) (2) lPackaging specifications


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    PDF SCS206AM O-220FM R1102B

    SCS206AM

    Abstract: No abstract text available
    Text: SCS206AM Datasheet SiC Schottky Barrier Diode Outline VR 600V IF 6A QC 9nC TO-220FM 2 (1) Inner circuit Features 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Anode 3) High-speed switching possible (1) (2) Packaging specifications


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    PDF SCS206AM O-220FM R1102S SCS206AM

    Untitled

    Abstract: No abstract text available
    Text: SCS206AG SiC Schottky Barrier Diode Datasheet lOutline VR 600V IF 6A QC 9nC TO-220AC 1 (2) lFeatures (3) lInner circuit 1) Shorter recovery time (1) 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)


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    PDF SCS206AG O-220AC R1102S

    SCS206AG

    Abstract: scs206 ROHM marking
    Text: SCS206AG Datasheet SiC Schottky Barrier Diode lOutline VR 600V IF 6A QC 9nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)


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    PDF SCS206AG O-220AC R1102S SCS206AG scs206 ROHM marking

    scs206

    Abstract: No abstract text available
    Text: SCS206AG Datasheet SiC Schottky Barrier Diode lOutline VR 650V IF 6A QC 9nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)


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    PDF SCS206AG O-220AC R1102B scs206

    Untitled

    Abstract: No abstract text available
    Text: 1 2 TO-257 1 - Cathode 2 - Anode APT6SC60G 600V 6A 11 N.C 22 SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier • Switching Losses Nearly • • • Hard Or Soft Switched


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    PDF O-257 APT6SC60G O-257 O-257AA

    HFA80NC40CSL

    Abstract: SLD61-8
    Text: PD -2.472 rev. B 01/99 HFA80NC40CSL TM Ultrafast, Soft Recovery Diode HEXFRED VR = 400V VF typ. ƒ = 1V IF(AV) = 80A Qrr (typ.) = 200nC IRRM(typ.) = 6A trr(typ.) = 30ns di(rec)M/dt (typ.)ƒ = 190A/µs Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of


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    PDF HFA80NC40CSL 200nC HFA80NC40CSL SLD61-8

    HFA80NC40CSM

    Abstract: No abstract text available
    Text: PD -2.471 rev. B 01/99 HFA80NC40CSM TM HEXFRED Ultrafast, Soft Recovery Diode VR = 400V VF typ. ƒ = 1V IF(AV) = 80A Qrr (typ.) = 200nC IRRM(typ.) = 6A trr(typ.) = 30ns di(rec)M/dt (typ.)ƒ = 190A/µs Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of


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    PDF HFA80NC40CSM 200nC HFA80NC40CSM

    Untitled

    Abstract: No abstract text available
    Text: IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C IC = 10A, TC = 100°C G tsc > 5µs, Tjmax = 175°C E VCE on typ. = 1.7V @ 6A n-channel Applications • Appliance Drives • Inverters


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    PDF IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF JESD47F) O-220

    scs206

    Abstract: SCS206AJ
    Text: SCS206AJ SiC Schottky Barrier Diode Datasheet Outline VR 600V IF 6A QC 9nC LPT L <TO-263AB> (1) (2) (3) (4) Features Inner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) N / C (3) Cathode (4) Anode 3) High-speed switching possible


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    PDF SCS206AJ O-263AB> R1102S scs206 SCS206AJ

    Untitled

    Abstract: No abstract text available
    Text: SCS206AJ Datasheet SiC Schottky Barrier Diode lOutline VR 650V IF 6A QC 9nC LPT L <TO-263AB> (1) (2) (3) (4) lFeatures lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) N / C (3) Cathode (4) Anode 3) High-speed switching possible


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    PDF SCS206AJ O-263AB> R1102B

    Untitled

    Abstract: No abstract text available
    Text: SCS206AJ Datasheet SiC Schottky Barrier Diode Outline VR 600V IF 6A QC 9nC LPT L <TO-263AB> (1) (2) (3) (4) Inner circuit Features (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) N / C (3) Cathode (4) Anode 3) High-speed switching possible


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    PDF SCS206AJ O-263AB> R1102S

    PT570LC4

    Abstract: 74118 2500VRMS 3000VA E214025 EN60947-4-1 relays schrack relay 17a 12v PT570730 miniature 12v relay schrack
    Text: General Purpose Relays Industrial Relays Schrack Miniature Relay PT n 2 pole 12A, 3 pole 10A or 4 pole 6A, 2, 3 or 4 form C CO contacts or AC coil n Switching performance up to 3000VA n Relay height 29mm n Mechanical indicator, optional LED and protection diode


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    PDF 3000VA F0191-B 250VAC, 100x103 PT570LC4 74118 2500VRMS 3000VA E214025 EN60947-4-1 relays schrack relay 17a 12v PT570730 miniature 12v relay schrack

    bUTTON PCB

    Abstract: relay 17a 12v 74118 diode marking code 777 10A250VAC PT580024
    Text: General Purpose Relays Industrial Relays SCHRACK Miniature Relay PT n 2 pole 12A, 3 pole 10A or 4 pole 6A, 2, 3 or 4 form C CO contacts or AC coil n Switching performance up to 3000VA n Relay height 29mm n Mechanical indicator, optional LED and protection diode


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    PDF 3000VA F0191-B E214025, 250VAC, 100x103 bUTTON PCB relay 17a 12v 74118 diode marking code 777 10A250VAC PT580024

    6A4 DIODE

    Abstract: AX-52 diode diode 6a4 diode 6a6 diode rL257 A106 6A1 diode 6A6 DIODE diode 6A2 1N4002
    Text: DIODE RECTIFIERS • 1.0A THRU 6.0A • 50V THRU 1000V CURRENT A 1.0 1.5 3.0 3.0 6.0 @ TEMP "C 25 25 25 25 25 SURGE (A) 50 50 200 150 400 50V 1N4001 J-05 RL251 1N5400 6A-05 100 V 1N4002 0-1 RL252 1N5401 6A-1 200V 1N4003 J-2 RL253 1N5402 6A-2 400V 1N4004


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    PDF 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 DO-41 DO-15 RL251 6A4 DIODE AX-52 diode diode 6a4 diode 6a6 diode rL257 A106 6A1 diode 6A6 DIODE diode 6A2

    Untitled

    Abstract: No abstract text available
    Text: SQ.i.p.sa Square In-line Package Bridge Diode • Avalanche type O U T L IN E D IM E N S IO N S D5FBDZ 400V 6A Unit ^ mm Weight - 18g ■ R A TIN G S A bsolute Maximum R atings IB # a m ~ ~ ~ ~ ~ ~ — -T yp e l H —— — H Z. Symbol p C ond itions


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