Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR E65A2CBS, E65A2CBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ・Average Forward Current : IO=65A. POLARITY E65A2CBS + Type E65A2CBR (- Type) K H MAXIMUM RATING (Ta=25℃) CHARACTERISTIC
|
Original
|
PDF
|
E65A2CBS,
E65A2CBR
E65A2CBS
35ING
100mA,
100mS
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR E65A2CBS, E65A2CBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A Average Forward Current : IO=65A. POLARITY E65A2CBS + Type E65A2CBR (- Type) K H MAXIMUM RATING (Ta=25 CHARACTERISTIC ) E I
|
Original
|
PDF
|
E65A2CBS,
E65A2CBR
E65A2CBS
100mA,
100mS
|
E65A27VBR
Abstract: E65A27VBS 20v zener diode
Text: SEMICONDUCTOR E65A27VBS, E65A27VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A Average Forward Current : IO=65A. Zener Voltage : 27V Typ. POLARITY E65A27VBS (+ Type) E65A27VBR (- Type) K H MAXIMUM RATING (Ta=25
|
Original
|
PDF
|
E65A27VBS,
E65A27VBR
E65A27VBS
100mA,
100mS
E65A27VBR
E65A27VBS
20v zener diode
|
alternator diode
Abstract: 20v zener diode
Text: SEMICONDUCTOR E65A21VBS, E65A21VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A Average Forward Current : IO=65A. Zener Voltage : 21V Typ. POLARITY E65A21VBS (+ Type) E65A21VBR (- Type) K H MAXIMUM RATING (Ta=25
|
Original
|
PDF
|
E65A21VBS,
E65A21VBR
E65A21VBS
100mA,
100mS
alternator diode
20v zener diode
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR E65A21VBS, E65A21VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A Average Forward Current : IO=65A. Zener Voltage : 21V Typ. POLARITY E65A21VBS (+ Type) E65A21VBR (- Type) K H MAXIMUM RATING (Ta=25
|
Original
|
PDF
|
E65A21VBS,
E65A21VBR
E65A21VBS
100mA,
100mS
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR E65A37VBS, E65A37VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A Average Forward Current : IO=65A. Zener Voltage : 37V Typ. POLARITY E65A37VBS (+ Type) E65A37VBR (- Type) K H MAXIMUM RATING (Ta=25
|
Original
|
PDF
|
E65A37VBS,
E65A37VBR
E65A37VBS
100mA,
100mS
|
2835 diode
Abstract: 32V zener
Text: SEMICONDUCTOR E65A37VBS, E65A37VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A Average Forward Current : IO=65A. Zener Voltage : 37V Typ. POLARITY E65A37VBS (+ Type) E65A37VBR (- Type) K H MAXIMUM RATING (Ta=25
|
Original
|
PDF
|
E65A37VBS,
E65A37VBR
E65A37VBS
100mA,
100mS
2835 diode
32V zener
|
alternator diode
Abstract: E65A27VBR E65A27VBS
Text: SEMICONDUCTOR E65A27VBS, E65A27VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A Average Forward Current : IO=65A. Zener Voltage : 27V Typ. POLARITY E65A27VBS (+ Type) E65A27VBR (- Type) K H MAXIMUM RATING (Ta=25
|
Original
|
PDF
|
E65A27VBS,
E65A27VBR
E65A27VBS
100mA,
100mS
alternator diode
E65A27VBR
E65A27VBS
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR E65A27VBS, E65A27VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ・Average Forward Current : IO=65A. ・Zener Voltage : 27V Typ. POLARITY E65A27VBS (+ Type) E65A27VBR (- Type) K H MAXIMUM RATING (Ta=25℃)
|
Original
|
PDF
|
E65A27VBS,
E65A27VBR
E65A27VBS
100mA,
100mS
|
byp303
Abstract: C67047-A2253-A2 BYP 303
Text: BYP 303 FRED Diode • Fast recovery epitaxial diode • Soft recovery characteristics Type VRRM IFRMS trr Package Ordering Code BYP 303 1200V 65A 140ns TO-218 AD C67047-A2253-A2 Maximum Ratings Parameter Symbol Mean forward current IFAV TC = 90 °C, D = 0.5
|
Original
|
PDF
|
140ns
O-218
C67047-A2253-A2
byp303
C67047-A2253-A2
BYP 303
|
Untitled
Abstract: No abstract text available
Text: MT 70 65A-UR 3mm Visible Light Emitting Diode 2.ELECTRICAL & OPTICAL CHARACTERISTICS Ta=25
|
Original
|
PDF
|
|
australia heat sink
Abstract: ARR04P5600
Text: Industrial Microphotonics Company 5600W QCW Laser Diode Array Part Number: ARR04P5600 Z PACKAGE • Packaged 112 Bar Laser Diode Array · Other Powers Are Also Available · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS
|
Original
|
PDF
|
ARR04P5600
785-1064nm)
laser2000
B-10/99
australia heat sink
ARR04P5600
|
australia heat sink
Abstract: Industrial Microphotonics Company ARR04P3600
Text: Industrial Microphotonics Company 3600W QCW Laser Diode Array Part Number: ARR04P3600 Z PACKAGE • Packaged 72 Bar Laser Diode Array · Other Powers Are Also Available · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS
|
Original
|
PDF
|
ARR04P3600
785-1064nm)
------360t
laser2000
B-10/99
australia heat sink
Industrial Microphotonics Company
ARR04P3600
|
laser diode array
Abstract: ASM01P050 Laser Diode 808 nm 5w
Text: Industrial Microphotonics Company 50W QCW Laser Diode Array Submodule Part Number: ASM01P050 SILVER BULLET TM • Packaged Laser Diode Array · Easily Soldered to a Heat Exchanger · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS
|
Original
|
PDF
|
ASM01P050
785-1064nm)
------50W
laser2000
D-10/01
laser diode array
ASM01P050
Laser Diode 808 nm 5w
|
|
|
ASM03P100
Abstract: No abstract text available
Text: 100W QCW Laser Diode Array Submodule Part Number: ASM03P100 SILVER BULLET TM • Packaged 2 Bar Laser Diode Array · Easily Soldered to a Heat Exchanger · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS PARAMETER CONDITIONS
|
Original
|
PDF
|
ASM03P100
785-1064nm)
------100W
D-10/01
ASM03P100
|
heat exchanger
Abstract: laser diode array ASM03P100 100W diode
Text: Industrial Microphotonics Company 100W CW Laser Diode Array Submodule Part Number: ASM03P100 SILVER BULLET • Packaged 2 Bar Laser Diode Array · Easily Soldered to a Heat Exchanger · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL
|
Original
|
PDF
|
ASM03P100
785-1064nm)
heat exchanger
laser diode array
ASM03P100
100W diode
|
150W LASER DIODE
Abstract: ASM05P150 Industrial Microphotonics
Text: Industrial Microphotonics Company 150W QCW Laser Diode Array Submodule Part Number: ASM05P150 SILVER BULLET TM • Packaged 3 Bar Laser Diode Array · Easily Soldered to a Heat Exchanger · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL
|
Original
|
PDF
|
ASM05P150
785-1064nm)
150Wt
laser2000
D-10/01
150W LASER DIODE
ASM05P150
Industrial Microphotonics
|
150W LASER DIODE
Abstract: laser diode array ASM05P150 Laser Diode for cutting
Text: 150W QCW Laser Diode Array Submodule Part Number: ASM05P150 SILVER BULLET TM • Packaged 3 Bar Laser Diode Array · Easily Soldered to a Heat Exchanger · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS PARAMETER CONDITIONS
|
Original
|
PDF
|
ASM05P150
785-1064nm)
------150W
D-10/01
150W LASER DIODE
laser diode array
ASM05P150
Laser Diode for cutting
|
ARR21P300
Abstract: No abstract text available
Text: Industrial Microphotonics Company 300W QCW Laser Diode Array Part Number: ARR21P300 A PACKAGE • Packaged 6-Bar Laser Diode Array · Patented MicroStackTM Technology · Available Wavelengths 785-1064nm · Other Powers Are Also Available OPTICAL CHARACTERISTICS
|
Original
|
PDF
|
ARR21P300
785-1064nm)
250Hz
laser2000
C-10/01
ARR21P300
|
ASM01P050
Abstract: ASM01
Text: 50W QCW Laser Diode Array Submodule Part Number: ASM01P050 SILVER BULLET TM • Packaged Laser Diode Array · Easily Soldered to a Heat Exchanger · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS PARAMETER CONDITIONS QCW Peak Power Output
|
Original
|
PDF
|
ASM01P050
785-1064nm)
------50W
D-10/01
ASM01P050
ASM01
|
Byp303
Abstract: No abstract text available
Text: SIEMENS BYP 303 FRED Diode • Fast recovery epitaxial diode • Soft recovery characteristics Type BYP 303 Vrrm 1200V Jfrms 65A írr Package Ordering Code 140ns TO-218AD C67047-A2253-A2 Maximum Ratings Parameter Symbol Mean forward current Values 6=av f c = 90 °C, D = 0.5
|
OCR Scan
|
PDF
|
140ns
O-218AD
C67047-A2253-A2
21value
F-1000
Byp303
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BYP 303 FRED Diode • Fast recovery epitaxial diode • Soft recovery characteristics Type Arrivi ^FRMS frr Package Ordering Code BYP 303 1200V 65A 140ns TO -218 AD C67047-A2253-A2 Maximum Ratings Param eter Symbol Mean forward current /fav 7q = 90 ° C ,D = 0 .5
|
OCR Scan
|
PDF
|
140ns
C67047-A2253-A2
|
Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR E65A27VBS, E65A27VBR T E C H N I C A L DATA ST A C K S ILICO N DIFFUSED DIODE A L T E R N A T O R DIODE FOR A U T O M O T IV E A PPLICATION. FEA TU RES • Average Forward C u rre n t: ]0=65A. • Zener Voltage : 27V Typ. POLARITY E65A27VBS ( + Type)
|
OCR Scan
|
PDF
|
E65A27VBS,
E65A27VBR
E65A27VBS
45oltag
|
