DL-4146-101
Abstract: laser diode 405nm 650nm laser diode 200mw DL-4146-101S DL-6147-040 Laser diode 532nm 50mW DL-8141-002 405nm 5mW laser diode DL-3147-260 DL-4146-301
Text: LASER DIODE 2007-11 SANYO Electric Co.,Ltd Electronic Device Company Sales&Marketing Division Laser Sales Section 1-1-10 Ueno,Taito-ku,Tokyo,110-8534 JAPAN Tel:+81-3-3837-6272 Fax:+81-3-3837-6390 Tottori SANYO Electric Co.,Ltd Electronic Device Company Photonics Business Division
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JDSU 6390 laser diode
Abstract: 6390-L3 diode 6390 600 um laser fiber medical 915nm
Text: Product Bulletin 5 W Ultra-Reliable FiberCoupled Laser Diode 6390-L3 Series JDS Uniphase's ultra-reliable 6390 series laser diodes offer 5 W of laser power from a 100 µm fiber into 0.2 NA. The L3 package is a redesign of the existing fiber-coupled L2 package, incorporating
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6390-L3
JDSU 6390 laser diode
diode 6390
600 um laser fiber medical
915nm
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DL-3147-060
Abstract: 405nm 5mW laser diode DL-7147-201 new focus photodiode 1514 Diode Laser Red 650nm 6mm 5V 5mW DL-5146-251 DL-3148-023 CIRCUIT 650NM laser diode 5mw DL-3147-260 650nm 5mw module 6mm 5v
Text: LASER DIODE '05-03 Tottori SANYO Electric Co., Ltd Photonics Business Unit Laser sales Section 1-1-10 Ueno, Taito-ku, Tokyo, 110-8534, JAPAN Tel : +81-3-3837-6272 Fax : +81-3-3837-6390 Photonics Business Unit 5-318, Tachikawa-cho, Tottori-city, Tottori, 680-8634 JAPAN
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405nm
980nm
DL-3147-060
405nm 5mW laser diode
DL-7147-201
new focus photodiode 1514
Diode Laser Red 650nm 6mm 5V 5mW
DL-5146-251
DL-3148-023 CIRCUIT
650NM laser diode 5mw
DL-3147-260
650nm 5mw module 6mm 5v
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Untitled
Abstract: No abstract text available
Text: Product Bulletin 5 W Ultra-Reliable FiberCoupled Laser Diode 6390-L3 Series JDS Uniphase's ultra-reliable 6390 series laser diodes offer 5 W of laser power from a 100 µm fiber into 0.2 NA. The L3 package is a redesign of the existing fiber-coupled L2 package, incorporating
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6390-L3
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JDSU 6390 laser diode
Abstract: No abstract text available
Text: Product Bulletin 5 W Ultra-Reliable FiberCoupled Laser Diode 6390-L3 Series JDS Uniphase's ultra-reliable 6390 series laser diodes offer 5 W of laser power from a 100 µm fiber into 0.2 NA. The L3 package is a redesign of the existing fiber-coupled L2 package, incorporating
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6390-L3
JDSU 6390 laser diode
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T1929N
Abstract: T380N T869N 5384 diode
Text: M3.2C - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 560 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode
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T380N
T869N
T1929N
T1929N
T380N
T869N
5384 diode
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7688
Abstract: T1929N T380N T869N diode 3428
Text: B6C - Schaltung ~~~ Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 1350 V 3600 V Verlustl. P d Luftmen. v L Schaltung pro KB + - Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id Diode D
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T380N
T869N
T1929N
Thyrist69N
7688
T1929N
T380N
T869N
diode 3428
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T1929N
Abstract: T380N T869N
Text: B6C - Schaltung ~~~ Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 1350 V 3600 V Verlustl. P d Luftmen. v L Schaltung pro KB + - Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id Diode D
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T380N
T869N
T1929N
T1929N
T380N
T869N
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR770DP www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR770DP
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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JDSU 6390 laser diode
Abstract: jdsu laser diode 980 nm JDSU laser diode JDSU pump laser manual diode laser pump JDS uniphase EDFA JDSU pump 980 GR-468-CORE laser diode jdsu radiator of diode
Text: COMMUNICATIONS COMPONENTS Uncooled Multi-Mode Pump Module 4800 Series Key Features • High power up to 4 W • 100 µm aperture, 0.2 NA • Low power dissipation • Compact package design: 13 Ø x 12 mm (H) • -5 to 70 °C operating range Applications
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4800PUMP
5378-JDSU
JDSU 6390 laser diode
jdsu laser diode 980 nm
JDSU laser diode
JDSU pump laser
manual diode laser pump
JDS uniphase EDFA
JDSU pump 980
GR-468-CORE
laser diode jdsu
radiator of diode
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china DVD player lens circuit diagram
Abstract: DVD player lens circuit diagram IS1684 polarized beam splitter IR3C09 05Z6.2 2 way video splitter circuit diagram optical pickup unit sharp CD DVD is1685 DVD laser pickup assembly
Text: OPIC Light Detector • OPIC Light Detector ★ : Under development ✩ : New product Ta=25˚C [For RF signal detection] Absolute maximum ratings Model No. Type Package IS1682E Built-in amplifier circuit, built-in RF addition amplifier (6-division PINPD
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IS1682E
IS1622
IS1623
IS1640
IS1650
IS1684
HT321S
china DVD player lens circuit diagram
DVD player lens circuit diagram
IS1684
polarized beam splitter
IR3C09
05Z6.2
2 way video splitter circuit diagram
optical pickup unit sharp CD DVD
is1685
DVD laser pickup assembly
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transistor NEC K2500
Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
Text: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales
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E3P102
Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001 SCILLC, 2001 Previous Edition 1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.
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DL135/D
Apr-2001
r14525
DLD601
E3P102
T2-955V
e6n02
t9n10e
DL135
1086v
l1n06c
24 v DC relay 34.51.7
d3n03
20n06hl
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400v 20A ultra fast recovery diode
Abstract: APT80GA60LD40 MIC4452 APT40GT60BR
Text: APT80GA60B2D40 APT80GA60LD40 600V APT80GA60B2D40 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT80GA60B2D40
APT80GA60LD40
400v 20A ultra fast recovery diode
APT80GA60LD40
MIC4452
APT40GT60BR
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APT80GA60LD40
Abstract: No abstract text available
Text: APT80GA60LD40 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT80GA60LD40
APT80GA60LD40
O-264
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APT80GA60LD40
Abstract: MIC4452
Text: APT80GA60LD40 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT80GA60LD40
APT80GA60LD40
MIC4452
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Untitled
Abstract: No abstract text available
Text: APT80GA60LD40 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT80GA60LD40
O-264
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Untitled
Abstract: No abstract text available
Text: APT80GA60LD40 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT80GA60LD40
APT80GA60LD40
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T1929N
Abstract: T380N T869N thyristoren
Text: B6C - Schaltung ~~~ Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 1350 V 3600 V Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] + - Kühlblöcke für Luftselbstkühlung
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T380N
T869N
T1929N
T1929N
T380N
T869N
thyristoren
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Untitled
Abstract: No abstract text available
Text: Si8425DB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) () MAX. ID (A) a, e 0.023 at VGS = -4.5 V -9.3 0.027 at VGS = -2.5 V -6.2 0.040 at VGS = -1.8 V -5.1 Qg (TYP.) 36 nC • Low-on resistance
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Si8425DB
842xx
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si8425DB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A)a, e 0.023 at VGS = - 4.5 V - 9.3 0.027 at VGS = - 2.5 V - 6.2 0.040 at VGS = - 1.8 V - 5.1 Qg (Typ.) 36 nC TrenchFET Power MOSFET Low-on Resistance
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Si8425DB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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2322 734 61003L
Abstract: 2322 730 91002L ssl2101t zener diode phc 2322 724 61003L zener PH-C GRM31CR61C106KC31L diode N1004 zener diode phc 47 fusistor
Text: UM10342 SSL2101 3 W mains dimmable buck board Rev. 01 — 28 September 2009 User manual Document information Info Content Keywords SSL2101, LED driver, AC/DC conversion, dimmable, mains supply, driver, user manual Abstract This is a user manual for the SSL2101 3 W mains dimmable buck driver
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UM10342
SSL2101
SSL2101,
UM10342
2322 734 61003L
2322 730 91002L
ssl2101t
zener diode phc
2322 724 61003L
zener PH-C
GRM31CR61C106KC31L
diode N1004
zener diode phc 47
fusistor
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T1929N
Abstract: T380N T869N
Text: B6C - Schaltung ~~~ Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 1350 V 3600 V Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] + - Kühlblöcke für Luftselbstkühlung
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T869N
T1929N
T1929N
T380N
T869N
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gaseous lasers
Abstract: C86083E C86093E 910nm laser rca rca 019 1200cu general electric laser 910nm
Text: E G 8. G/CANADA/OPTOELEK Electro Optics 5TE ì> m 3030blD 0D0D2b0 2 • CANA T 1 ¥ /~ O S ^ C86093E 910 nm Quantum Well Pulsed Laser DATA SHEET Coaxial Stud Package m 1r 1 The C86093E is a high power single element pulsed laser diode operating in the 900to 920 nm wavelength band. Using
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3030blD
C86093E
200ns
910nm
C86093E
900to
gaseous lasers
C86083E
910nm
laser rca
rca 019
1200cu
general electric
laser 910nm
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