Contextual Info: laser diode module, elliptical beam, ø12mm A compact, ergonomically-designed 635/639nm laser diode module for a wide range of applications such as industrial alignment, positioning and inspection and sensing. Laser diode modules from the Optoelectronics Company are available in

Contextual Info: 639nm laser diode module, elliptical beam, 12mm diameter A co m pact, ergonom ically designed 639nm laser diode m odule suitable for a w ide range of applications. Laser diode modules from the Optoelectronics C om pany are available in wavelengths from 405nm to 852nm, in a w ide range of optical output

APT2x151DL60J

Abstract: H100
Contextual Info: APT2X151DL60J 600V 150A Ultrafast Soft Recovery Dual Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrafast Recovery Times trr • Low Losses • Free Wheeling Diode

Contextual Info: 635nm Laser Diode 635nm Red Laser Diode /&8633541A-preliminary •Specifications 1 Device: (2) Structure: /&8633541A-preliminary Laser Diode TO-18(ψ5.6mm), with Pb free glass cap, PD ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃)

Contextual Info: DSS6-0025BS preliminary Schottky Diode VRRM = 25 V I FAV = 6A VF = 0.3 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS6-0025BS Marking on Product: 6Y025AS Backside: cathode 1 3 4 Features / Advantages: Applications:

Contextual Info: DSS6-0025BS preliminary V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 25 V 6A 0.30 V Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Very low Vf Extremely low switching losses

Q62702-B695

Contextual Info: BB 639C Silicon Variable Capacitance Diode • For tuning of extended frequency band in VHF TV/ VTR tuners Type Marking Ordering Code Pin Configuration Package BB 639C yellow S Q62702-B695 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Values Diode reverse voltage

Q62702-B695

Abstract: 639C
Contextual Info: BB 639C Silicon Variable Capacitance Diode • For tuning of extended frequency band in VHF TV / VTR tuners Type Marking Ordering Code Pin Configuration Package BB 639C yellow S Q62702-B695 1=C 2=A SOD-323 Maximum Ratings Parameter Symbol Diode reverse voltage

l4 marking code diode

Abstract: diode MARKING b3 DIODE 504
Contextual Info: DSS6-0025BS preliminary V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 25 V 6A 0.30 V Part number DSS6-0025BS 1 2 3 Backside: cathode Features / Advantages: Applications: Package: ● Very low Vf

laser barcode reader circuit

Abstract: DL-3147-041 DL3147-041
Contextual Info: Ordering number : EN5862A DL-3147-041 Red Laser Diode DL-3147-041 Index Guided AlGaInP Laser Diode Overview Package Dimensions DL-3147-041 is index guided 645 nm Typ. AlGaInP laser diode with low threshold current and high operating temperature. The low threshold current

Contextual Info: BB 639C Silicon Variable Capacitance Diode 2 • For tuning of extended frequency band 1 in VHF TV / VTR tuners VPS05176 1 2 EHA07001 Type Marking Pin Configuration Package BB 639C yellow S 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage

v1010

Contextual Info: BB 639 Silicon Variable Capacitance Diode 2 • For tuning of extended frequency band 1 in VHF TV / VTR tuners VPS05176 1 2 EHA07001 Type Marking Pin Configuration Package BB 639 yellow S 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage

DL-3147-141

Contextual Info: Ordering number : EN5863A DL-3147-141 -241 Red Laser Diode DL-3147-141(-241) Index Guided AlGaInP Laser Diode Overview Package Dimensions DL-3147-141(-241) is index guided 645 nm (Typ.) AlGaInP laser diode with low threshold current and high operating temperature. The low

U-LD-632051A

Abstract: U-LD-632051A-preliminary
Contextual Info: U-LD-632051A-preliminary UNION OPTRONICS CORP. 635nm Laser Diode 635nm Red Laser Diode U-LD-632051A-preliminary •Specifications 1 Device: (2) Structure: Laser Diode TO-18(ψ5.6mm),With Pb free glass cap, PD ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃)

Contextual Info: BB 639C Silicon Variable Capacitance Diode 2
For tuning of extended frequency band 1 in VHF TV / VTR tuners VPS05176 1 2 EHA07001 Type Marking Pin Configuration Package BB 639C yellow S 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage

Contextual Info: BB 639 Silicon Variable Capacitance Diode 2
For tuning of extended frequency band 1 in VHF TV / VTR tuners VPS05176 1 2 EHA07001 Type Marking Pin Configuration Package BB 639 yellow S 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage

DL-3038-023

Contextual Info: Ordering number : EN5854A DL-3038-023 Red Laser Diode DL-3038-023 AlGaInP Laser Diode Overview Package Dimensions DL-3038-023 is 635 nm Typ. AlGaInP laser diode with low threshold current. The low threshold current and short wavelength are achieved by use of a strained

Contextual Info: SIEMENS BB 639C Silicon Variable Capacitance Diode • For tuning of extended frequency band in V H F TV/ V TR tuners Type Marking Ordering Code Pin Configuration Package B B 639C yellow S Q62702-B695 1 =C SOD-323 2 =A Maximum Ratings Symbol Parameter Diode reverse voltage

Contextual Info: SIEMENS BB 639C Silicon Variable Capacitance Diode • For tuning of extended frequency band in V H F TV/ VT R tuners Type Marking Ordering Code Pin Configuration Package BB 639C yellow S 1 =C SOD-323 Q62702-B695 2 =A Maximum Ratings Parameter Symbol Diode reverse voltage

DL-3148-023 CIRCUIT

Abstract: DL-3148-023 2 Wavelength Laser Diode sanyo
Contextual Info: Ordering number : EN5859A DL-3148-023 Red Laser Diode DL-3148-023 AlGaInP Laser Diode Overview Package Dimensions DL-3148-023 is 635 nm Typ. AlGaInP laser diode with low threshold current. The low threshold current and short wavelength are achieved by the use of a strained multiple quantum well active layer. The lasing

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

150a 400v diode bridge

Abstract: 6075A
Contextual Info: APT150DL60B2 G 600V 150A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)

Contextual Info: APT150DL60B2 G 600V 150A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)

Contextual Info: APT150DL60B2 G 600V 150A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)