Untitled
Abstract: No abstract text available
Text: laser diode module, elliptical beam, ø12mm A compact, ergonomically-designed 635/639nm laser diode module for a wide range of applications such as industrial alignment, positioning and inspection and sensing. Laser diode modules from the Optoelectronics Company are available in
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635/639nm
405nm
852nm,
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APT2x151DL60J
Abstract: H100
Text: APT2X151DL60J 600V 150A Ultrafast Soft Recovery Dual Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrafast Recovery Times trr • Low Losses • Free Wheeling Diode
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APT2X151DL60J
APT2x151DL60J
H100
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Untitled
Abstract: No abstract text available
Text: 635nm Laser Diode 635nm Red Laser Diode /&8633541A-preliminary •Specifications 1 Device: (2) Structure: /&8633541A-preliminary Laser Diode TO-18(ψ5.6mm), with Pb free glass cap, PD ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃)
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635nm
633541A-preliminary
lcu633541a
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Abstract: No abstract text available
Text: DSS6-0025BS preliminary Schottky Diode VRRM = 25 V I FAV = 6A VF = 0.3 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS6-0025BS Marking on Product: 6Y025AS Backside: cathode 1 3 4 Features / Advantages: Applications:
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DSS6-0025BS
6Y025AS
O-252
60747and
20131031b
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Untitled
Abstract: No abstract text available
Text: DSS6-0025BS preliminary V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 25 V 6A 0.30 V Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Very low Vf Extremely low switching losses
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DSS6-0025BS
O-252
60747and
20110915a
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Q62702-B695
Abstract: No abstract text available
Text: BB 639C Silicon Variable Capacitance Diode • For tuning of extended frequency band in VHF TV/ VTR tuners Type Marking Ordering Code Pin Configuration Package BB 639C yellow S Q62702-B695 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Values Diode reverse voltage
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Q62702-B695
OD-323
Jan-08-1997
Q62702-B695
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Q62702-B695
Abstract: 639C
Text: BB 639C Silicon Variable Capacitance Diode • For tuning of extended frequency band in VHF TV / VTR tuners Type Marking Ordering Code Pin Configuration Package BB 639C yellow S Q62702-B695 1=C 2=A SOD-323 Maximum Ratings Parameter Symbol Diode reverse voltage
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Q62702-B695
OD-323
Apr-30-1998
20eries
Q62702-B695
639C
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l4 marking code diode
Abstract: diode MARKING b3 DIODE 504
Text: DSS6-0025BS preliminary V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 25 V 6A 0.30 V Part number DSS6-0025BS 1 2 3 Backside: cathode Features / Advantages: Applications: Package: ● Very low Vf
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DSS6-0025BS
O-252
current10
60747and
20110915a
l4 marking code diode
diode MARKING b3
DIODE 504
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laser barcode reader circuit
Abstract: DL-3147-041 DL3147-041
Text: Ordering number : EN5862A DL-3147-041 Red Laser Diode DL-3147-041 Index Guided AlGaInP Laser Diode Overview Package Dimensions DL-3147-041 is index guided 645 nm Typ. AlGaInP laser diode with low threshold current and high operating temperature. The low threshold current
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EN5862A
DL-3147-041
DL-3147-041
laser barcode reader circuit
DL3147-041
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Untitled
Abstract: No abstract text available
Text: BB 639C Silicon Variable Capacitance Diode 2 • For tuning of extended frequency band 1 in VHF TV / VTR tuners VPS05176 1 2 EHA07001 Type Marking Pin Configuration Package BB 639C yellow S 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage
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VPS05176
EHA07001
OD-323
Oct-05-1999
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v1010
Abstract: No abstract text available
Text: BB 639 Silicon Variable Capacitance Diode 2 • For tuning of extended frequency band 1 in VHF TV / VTR tuners VPS05176 1 2 EHA07001 Type Marking Pin Configuration Package BB 639 yellow S 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage
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VPS05176
EHA07001
OD-323
Oct-21-1999
EHD07048
v1010
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DL-3147-141
Abstract: No abstract text available
Text: Ordering number : EN5863A DL-3147-141 -241 Red Laser Diode DL-3147-141(-241) Index Guided AlGaInP Laser Diode Overview Package Dimensions DL-3147-141(-241) is index guided 645 nm (Typ.) AlGaInP laser diode with low threshold current and high operating temperature. The low
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EN5863A
DL-3147-141
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U-LD-632051A
Abstract: U-LD-632051A-preliminary
Text: U-LD-632051A-preliminary UNION OPTRONICS CORP. 635nm Laser Diode 635nm Red Laser Diode U-LD-632051A-preliminary •Specifications 1 Device: (2) Structure: Laser Diode TO-18(ψ5.6mm),With Pb free glass cap, PD ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃)
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U-LD-632051A-preliminary
635nm
U-LD-632051A
U-LD-632051A-preliminary
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Untitled
Abstract: No abstract text available
Text: U-LD-633541A-preliminary UNION OPTRONICS CORP. 635nm Laser Diode 635nm Red Laser Diode U-LD-633541A-preliminary •Specifications 1 Device: (2) Structure: Laser Diode TO-18(ψ5.6mm), with Pb free glass cap, PD ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃)
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635nm
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Untitled
Abstract: No abstract text available
Text: BB 639 Silicon Variable Capacitance Diode 2 For tuning of extended frequency band 1 in VHF TV / VTR tuners VPS05176 1 2 EHA07001 Type Marking Pin Configuration Package BB 639 yellow S 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage
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VPS05176
EHA07001
OD-323
Dec-07-2000
EHD07048
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DL-3038-023
Abstract: No abstract text available
Text: Ordering number : EN5854A DL-3038-023 Red Laser Diode DL-3038-023 AlGaInP Laser Diode Overview Package Dimensions DL-3038-023 is 635 nm Typ. AlGaInP laser diode with low threshold current. The low threshold current and short wavelength are achieved by use of a strained
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EN5854A
DL-3038-023
DL-3038-023
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DL-3148-023 CIRCUIT
Abstract: DL-3148-023 2 Wavelength Laser Diode sanyo
Text: Ordering number : EN5859A DL-3148-023 Red Laser Diode DL-3148-023 AlGaInP Laser Diode Overview Package Dimensions DL-3148-023 is 635 nm Typ. AlGaInP laser diode with low threshold current. The low threshold current and short wavelength are achieved by the use of a strained multiple quantum well active layer. The lasing
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EN5859A
DL-3148-023
DL-3148-023
DL-3148-023 CIRCUIT
2 Wavelength Laser Diode sanyo
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150a 400v diode bridge
Abstract: 6075A
Text: APT150DL60B2 G 600V 150A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)
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APT150DL60B2
O-247
150a 400v diode bridge
6075A
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Untitled
Abstract: No abstract text available
Text: APT150DL60B2 G 600V 150A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)
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APT150DL60B2
O-247
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Untitled
Abstract: No abstract text available
Text: APT150DL60B2 G 600V 150A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)
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APT150DL60B2
O-247
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Untitled
Abstract: No abstract text available
Text: 639nm laser diode module, elliptical beam, 12mm diameter A co m pact, ergonom ically designed 639nm laser diode m odule suitable for a w ide range of applications. Laser diode modules from the Optoelectronics C om pany are available in wavelengths from 405nm to 852nm, in a w ide range of optical output
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639nm
405nm
852nm,
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Untitled
Abstract: No abstract text available
Text: SIEMENS BB 639C Silicon Variable Capacitance Diode • For tuning of extended frequency band in V H F TV/ V TR tuners Type Marking Ordering Code Pin Configuration Package B B 639C yellow S Q62702-B695 1 =C SOD-323 2 =A Maximum Ratings Symbol Parameter Diode reverse voltage
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Q62702-B695
OD-323
235b05
G1204bb
235b05
01E04b7
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Untitled
Abstract: No abstract text available
Text: SIEMENS BB 639C Silicon Variable Capacitance Diode • For tuning of extended frequency band in V H F TV/ VT R tuners Type Marking Ordering Code Pin Configuration Package BB 639C yellow S 1 =C SOD-323 Q62702-B695 2 =A Maximum Ratings Parameter Symbol Diode reverse voltage
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Q62702-B695
OD-323
CT2/CT25
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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