NTE6090
Abstract: TO218 package TO3P package
Text: NTE6090 Silicon Dual Power Rectifier 45V, 30 Amp, TO218/TO3P Description: The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Dual Diode Construction: Pin1 and Pin3 may be Connected for Parallel Operation at Full Range
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NTE6090
O218/TO3P
NTE6090
O3P/TO218
TO218 package
TO3P package
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NTE6090
Abstract: TO218 package
Text: NTE6090 Silicon Dual Power Rectifier Description: The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Dual Diode Construction: Pin1 and Pin3 may be Connected for Parallel Operation at Full Range
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NTE6090
NTE6090
O3P/TO218
TO218 package
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1N4007 MINI MELF
Abstract: No abstract text available
Text: LCD Television Table of Contents BACKLIGHT INVERTER, Lighting Ignitor. 3 BACKLIGHT INVERTER, MOSFET Driver. 4
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250ns
DO-220AA
V-540V;
V-440V;
DO-204AL
DO-41)
DO-204AC
1N4007 MINI MELF
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Untitled
Abstract: No abstract text available
Text: NTE2969 MOSFET N−Channel, Enhancement Mode High Speed Switch TO3P Package Description: The NTE2969 is an N−channel enhancement mode power field effect transistor in a TO3P type package especially tailored to minimize on−state resistance, provide superior switching performance, and
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NTE2969
NTE2969
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UJT-2N2646 PIN DIAGRAM DETAILS
Abstract: UJT-2N2646 1N5844 transistor GDV 64A motorola diode marking 925b Zener Diode SOT-23 929b 1N4042A Motorola 1n4504 1N5856B 1n5844 diode
Text: Motorola TVS/Zener Device Data Alphanumeric Index of Part Numbers 1 Cross Reference and Index 2 Selector Guide for Transient Voltage Suppressors and Zener Diodes 3 Transient Voltage Suppressors Axial Leaded Data Sheets 4 Transient Voltage Suppressors Surface Mounted Data Sheets
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Untitled
Abstract: No abstract text available
Text: APTGU40H60T Full - Bridge PT IGBT Power Module VCES = 600V IC = 40A @ Tc = 80°C Application • • • • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Power MOS 7 Punch Through PT IGBT - Low conduction loss
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APTGU40H60T
200kHz
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varistor 565-1
Abstract: 3SM diode 151 VARISTOR Z 151 VARISTOR VDE 565-1 WXP-103K Varistor 271 VARISTOR etc 333 271 varistor ac to dc pulse supply 5000 watt
Text: RFI Capacitors VDE Metallized Polypropylene Film Capacitors X2 Capacitance (mF) Series WXP Global Electronic Component Solutions Since 1969 World Products Inc. has provided its domestic and international customers with state of the art, synergistic electronic product lines for the automotive, telecom, industrial,
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8/20ms
8/20ms
varistor 565-1
3SM diode
151 VARISTOR
Z 151 VARISTOR
VDE 565-1
WXP-103K
Varistor 271
VARISTOR etc 333
271 varistor
ac to dc pulse supply 5000 watt
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6NM80 Preliminary Power MOSFET 6A, 800V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 6NM80 is an Super Junction MOSFET Structure . It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state
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6NM80
6NM80
6NM80L-Tat
QW-R209-070
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6NM80 Preliminary Power MOSFET 6A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6NM80 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specialized in allowing a
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6NM80
6NM80
QW-R209-070
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N80 Preliminary 6.0 Amps, 800 Volts N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 DESCRIPTION The UTC 6N80 is a N-channel mode Power FET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specialized in allowing a
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O-220
O-220F
O-220F1
QW-R502-500
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6n80
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N80 Preliminary 6A, 800V N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 DESCRIPTION The UTC 6N80 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specialized in allowing a
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O-220
O-220F
O-220F1
QW-R502-500
6n80
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APT40GU60JU2
Abstract: No abstract text available
Text: APT40GU60JU2 ISOTOP Boost chopper PT IGBT K C E K Benefits • Outstanding performance at high frequency operation · Stable temperature behavior · Very rugged · Direct mounting to heatsink isolated package · Low junction to case thermal resistance C
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APT40GU60JU2
200kHz
OT-227)
APT40GU60JU2
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igbt 400V 40A
Abstract: APT40GU60JU3
Text: APT40GU60JU3 ISOTOP Buck chopper PT IGBT VCES = 600V IC = 40A @ Tc = 110°C C Application • AC and DC motor control · Switched Mode Power Supplies G E A A E Benefits · Outstanding performance at high frequency operation · Stable temperature behavior
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APT40GU60JU3
200kHz
OT-227)
igbt 400V 40A
APT40GU60JU3
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MOV150
Abstract: Amp. mosfet 1000 watt K 250 VARISTOR 1.5ke series varistor 7 k 470 TVS AE SMA catalog mosfet Transistor smd en132400 275v SLP2510P8 radial capacitor 160V
Text: WPI Metal Oxide Environmental Varistor EV Series UL1449 3rd Edition Recognized Disk Diameter Peak Current, 8/20ms Amps 5mm 125, 250, 500, 800 11, 14, 17, 20, 25, 30, 35, 40, 50, 60, 75, 95, 120, 130, 140, 150, 180, 195, 210, 230, 250, 275, 300, 320, 360
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UL1449
8/20ms
MOV150
Amp. mosfet 1000 watt
K 250 VARISTOR
1.5ke series
varistor 7 k 470
TVS AE SMA
catalog mosfet Transistor smd
en132400 275v
SLP2510P8
radial capacitor 160V
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varistor 565-1
Abstract: Z 151 VARISTOR VARISTOR etc 333 varistor 6kv 3ka 3SM diode VDE 565-1 WXP-103K 4532 MOSFET varistor en132400 varistor 471 14
Text: 2 | Protection Products Short Form Catalog Metal Oxide Varistor VDE Diameters Peak Current, 8/20ms Amps Varistor Voltages 5mm 100, 400, 800 18, 22, 27, 33, 39, 47, 56, 68, 82, 100, 120, 150, 180, 200, 220, 240, 270, 300, 330, 360, 390, 430, 470, 510, 560, 620, 680
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8/20ms
varistor 565-1
Z 151 VARISTOR
VARISTOR etc 333
varistor 6kv 3ka
3SM diode
VDE 565-1
WXP-103K
4532 MOSFET
varistor en132400
varistor 471 14
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Untitled
Abstract: No abstract text available
Text: APTM120DA68T1G VDSS = 1200V RDSon = 680mΩ typ @ Tj = 25°C ID = 15A @ Tc = 25°C Boost chopper MOSFET Power Module 5 6 11 Application • • • CR1 3 4 Q2 NTC Features • 9 10 1 2 AC and DC motor control Switched Mode Power Supplies Power Factor Correction
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APTM120DA68T1G
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Untitled
Abstract: No abstract text available
Text: APTM120SK68T1G VDSS = 1200V RDSon = 680mΩ typ @ Tj = 25°C ID = 15A @ Tc = 25°C Buck chopper MOSFET Power Module 5 11 6 Application • • Q1 7 AC and DC motor control Switched Mode Power Supplies Features 8 NTC 3 4 • CR2 1 2 • • • 12 Power MOS 8 MOSFETs
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APTM120SK68T1G
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APT0406
Abstract: APT0502 APTM120DA68T1G
Text: APTM120DA68T1G VDSS = 1200V RDSon = 680mΩ typ @ Tj = 25°C ID = 15A @ Tc = 25°C Boost chopper MOSFET Power Module 5 6 11 Application • • • CR1 3 4 Q2 NTC Features • 9 10 1 2 AC and DC motor control Switched Mode Power Supplies Power Factor Correction
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APTM120DA68T1G
APT0406
APT0502
APTM120DA68T1G
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APT0406
Abstract: APT0502 APTM120SK68T1G
Text: APTM120SK68T1G VDSS = 1200V RDSon = 680mΩ typ @ Tj = 25°C ID = 15A @ Tc = 25°C Buck chopper MOSFET Power Module 5 11 6 Application • • Q1 7 AC and DC motor control Switched Mode Power Supplies Features 8 NTC 3 4 • CR2 1 2 • • • 12 Power MOS 8 MOSFETs
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APTM120SK68T1G
APT0406
APT0502
APTM120SK68T1G
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ge 142
Abstract: GA100TS60U
Text: PD -50055C GA100TS60U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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-50055C
GA100TS60U
ge 142
GA100TS60U
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SMD DIODE 615 200A
Abstract: 2N0303 SPB80N03S2-03 SPP80N03S2-03
Text: SPP80N03S2-03 SPB80N03S2-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated VDS 30 RDS on max. SMD version 3.1 m ID 80 A P-TO263-3-2 Type
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SPP80N03S2-03
SPB80N03S2-03
P-TO263-3-2
P-TO220-3-1
P-TO220-3-1
Q67040-S4247
2N0303
P-TO263-3-2
SMD DIODE 615 200A
2N0303
SPB80N03S2-03
SPP80N03S2-03
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Untitled
Abstract: No abstract text available
Text: FDP047N08 N-Channel PowerTrench tm MOSFET 75V, 164A, 4.7mΩ Features Description • RDS on = 3.8mΩ ( Typ.)@ VGS = 10V, ID = 80A This N-Channel MOSFET is produced using Fairchild Semicon- • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(on)
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FDP047N08
O-220
FDP047N08
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FDP047N08
Abstract: n-channel, 75v, 80a
Text: FDP047N08 N-Channel PowerTrench tm MOSFET 75V, 164A, 4.7mΩ Features Description • RDS on = 3.8mΩ ( Typ.)@ VGS = 10V, ID = 80A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been espe- • Fast switching speed
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FDP047N08
O-220
FDP047N08
n-channel, 75v, 80a
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Untitled
Abstract: No abstract text available
Text: APTGU40DH60T Asymmetrical - Bridge PT IGBT Power Module VCES = 600V IC = 40A @ Tc = 80°C Application • • • VBUS VBUS SENSE Q1 G1 CR3 Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives Features E1 Power MOS 7 Punch Through PT IGBT
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APTGU40DH60T
200kHz
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