Untitled
Abstract: No abstract text available
Text: PD - 94817 IRF6215PbF Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -150V RDS on = 0.29Ω G Description ID = -13A S Fifth Generation HEXFETs from International Rectifier
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IRF6215PbF
-150V
O-220
O-220AB.
O-220AB
IRF1010
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diode 6.6A rectifier
Abstract: No abstract text available
Text: PD - 94817 IRF6215PbF Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -150V RDS on = 0.29Ω G Description ID = -13A S Fifth Generation HEXFETs from International Rectifier
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IRF6215PbF
-150V
O-220
O-220AB.
O-220AB
IRF1010
diode 6.6A rectifier
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diode 66a
Abstract: No abstract text available
Text: PD - 94817 IRF6215PbF Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -150V RDS on = 0.29Ω G Description ID = -13A S Fifth Generation HEXFETs from International Rectifier
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IRF6215PbF
-150V
O-220
O-220AB.
O-220AB
IRF1010
diode 66a
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irf6215pbf
Abstract: No abstract text available
Text: PD - 94817 IRF6215PbF Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -150V RDS on = 0.29Ω G Description ID = -13A S Fifth Generation HEXFETs from International Rectifier
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IRF6215PbF
-150V
O-220
O-220AB.
O-220AB
IRF1010
irf6215pbf
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Untitled
Abstract: No abstract text available
Text: PD-94165A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y6215CM 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5Y6215CM -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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PD-94165A
O-257AA)
IRF5Y6215CM
-150V
5M-1994.
O-257AA.
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Untitled
Abstract: No abstract text available
Text: PD-94165A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y6215CM 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5Y6215CM -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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PD-94165A
O-257AA)
IRF5Y6215CM
-150V
5M-1994.
O-257AA.
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IRF5Y6215CM
Abstract: No abstract text available
Text: PD - 94165 HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y6215CM 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5Y6215CM -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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O-257AA)
IRF5Y6215CM
-150V
-150V,
O-257AA
IRF5Y6215CM
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IRF6215
Abstract: No abstract text available
Text: PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -150V RDS on = 0.29Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier
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91479B
IRF6215
-150V
O-220
IRF6215
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Untitled
Abstract: No abstract text available
Text: PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -150V RDS on = 0.29Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier
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91479B
IRF6215
-150V
O-220
appl245,
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IRF6215
Abstract: No abstract text available
Text: PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -150V RDS on = 0.29Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier
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91479B
IRF6215
-150V
O-220
IRF6215
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IRF6215 dpak
Abstract: IRF6215 diode 6.6A rectifier marking 66a
Text: IRFR/U6215PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage
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IRFR/U6215PbF
O-252AA)
EIA-481
EIA-541.
EIA-481.
IRF6215 dpak
IRF6215
diode 6.6A rectifier
marking 66a
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IRFR6215PBF
Abstract: IRFR6215 IRFU6215
Text: PD-95080A IRFR6215PbF IRFU6215PbF P-Channel l 175°C Operating Temperature l Surface Mount IRFR6215 l Straight Lead (IRFU6215) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = -150V
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PD-95080A
IRFR6215PbF
IRFU6215PbF
IRFR6215)
IRFU6215)
-150V
surfa16
EIA-481
EIA-541.
EIA-481.
IRFR6215PBF
IRFR6215
IRFU6215
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IRFR6215
Abstract: IRFU6215
Text: PD-95080A IRFR6215PbF IRFU6215PbF P-Channel l 175°C Operating Temperature l Surface Mount IRFR6215 l Straight Lead (IRFU6215) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = -150V
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PD-95080A
IRFR6215PbF
IRFU6215PbF
IRFR6215)
IRFU6215)
-150V
O-252AA)
EIA-481
EIA-541.
EIA-481.
IRFR6215
IRFU6215
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Untitled
Abstract: No abstract text available
Text: PD-95080A IRFR6215PbF IRFU6215PbF P-Channel l 175°C Operating Temperature l Surface Mount IRFR6215 l Straight Lead (IRFU6215) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = -150V
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PD-95080A
IRFR6215PbF
IRFU6215PbF
IRFR6215)
IRFU6215)
-150V
EIA-481
EIA-541.
EIA-481.
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|
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Untitled
Abstract: No abstract text available
Text: PD - 97564 AUTOMOTIVE GRADE Features l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant
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Untitled
Abstract: No abstract text available
Text: PD - 97564 AUTOMOTIVE GRADE Features l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant
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AUIRF6215
-150V
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Untitled
Abstract: No abstract text available
Text: AUTOMOTIVE GRADE PD-96302A AUIRFR6215 HEXFET Power MOSFET Features l P-Channel l Low On-Resistance l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant
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PD-96302A
AUIRFR6215
-150V
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AEC-Q101-005
Abstract: AUIRF
Text: AUTOMOTIVE GRADE AUIRF6215S HEXFET Power MOSFET Features l Advanced Planar Technology Low On-Resistance P-Channel l Dynamic dV/dT Rating l l D l 175°C Operating Temperature Fast Switching l Fully Avalanche Rated l l l l VDSS RDS on max. ID G S Repetitive Avalanche Allowed up to
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AUIRF6215S
-150V
AEC-Q101-005
AUIRF
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Untitled
Abstract: No abstract text available
Text: PD -9.1479A International IGR Rectifier IRF6215 PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated V dss = -150V ROS on = 0.29Q
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OCR Scan
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PDF
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IRF6215
-150V
O-220
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Untitled
Abstract: No abstract text available
Text: P D -9 1 4 7 9 B International Iör Rectifier IRF6215 HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated Description V dss = •"! 50V RüS on = 0.29Î2
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PDF
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IRF6215
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Untitled
Abstract: No abstract text available
Text: PD - 91643 International IGR Rectifier IRF6215S/L HEXFET Power MOSFET • • • • • • • A dvanced Process Technology Surface Mount IRF6215S Low-profile through-hole (IRF6215L) 1 7 5 °C O perating Tem perature Fast Switching P-Channel Fully Avalanche Rated
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OCR Scan
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IRF6215S/L
IRF6215S)
IRF6215L)
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Untitled
Abstract: No abstract text available
Text: PD - 91749 International IQ R Rectifier IRFR/U6215 PRELIMINARY HEXFET Power MOSFET • P-Channel • 175°C Operating Temperature • Surface Mount IRFR6215 • Straight Lead (IRFU6215) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated
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OCR Scan
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PDF
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IRFR6215)
IRFU6215)
IRFR/U6215
-150V
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marking code AAR
Abstract: No abstract text available
Text: International IO R Rectifier P D - 9.1506 PRELIMINARY 1RFR/U9024N HEXFET Power MOSFET Ultra Low On-Resistance P-Channel Voss = -55V Surface Mount IRFR9024N Straight Lead (IRFU9024N) Advanced Process Technology Fast Switching Fully Avalanche Rated ^ D S (o n )
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OCR Scan
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PDF
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IRFR9024N)
IRFU9024N)
1RFR/U9024N
EIA-481.
marking code AAR
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U9024N
Abstract: BSS 250 IRFR P-Channel MOSFET
Text: P D - 9.1506 International IGR Rectifier PRELIMINARY 1RFR/U9024N HEXFET Power MOSFET Ultra Low On-Resistance P-Channel Surface Mount IRFR9024N Straight Lead (IRFU9024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Vdss = -55V RDS(on) = 0.175Í2
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IRFR9024N)
IRFU9024N)
1RFR/U9024N
4A5545E
002flL07
U9024N
BSS 250
IRFR P-Channel MOSFET
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