RF501B2S
Abstract: No abstract text available
Text: RF501B2S Diode Fast Recovery Diode RF501B2S ●Application General rectification ●Land size figure Unit : mm ●Dimensions（Unit : mm） 6.0 6.5±0.2 5.1±0.2 0.1 0.5±0.1 1.5±0.3 C0.5 1.6 1.5 0.75 2.5 ① CPD 0.9 （1） ●Construction Silicon epitaxial
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RF501B2S
SC-63
RF501B2S
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KV1360NT
Abstract: No abstract text available
Text: KV1360NT VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • ■ ■ ■ ■ FM Radio ■ Voltage Controlled Oscillator ■ Battery Operated Products Very Low Operating Voltage 1 to 6.5 V Excellent Linearity (CV Curve) Large Capacitance Ratio (A = 4.70 minimum)
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KV1360NT
O92-3)
KV1360NT
O92-3
IC-xxx-KV1471E
0798O0
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PDF
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KV1360NT
Abstract: No abstract text available
Text: KV1360NT VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • ■ ■ ■ ■ FM Radio ■ Voltage Controlled Oscillator ■ Battery Operated Products Very Low Operating Voltage 1 to 6.5 V Excellent Linearity (CV Curve) Large Capacitance Ratio (A = 4.70 minimum)
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KV1360NT
O92-3)
KV1360NT
O92-3
IC-xxx-KV1471E
0798O0
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diode F6 03
Abstract: KV1460 c65 diode
Text: KV1460 VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • ■ ■ ■ ■ ■ FM Radio ■ Voltage Controlled Oscillator ■ Battery Operated Products Very Low Operating Voltage 1 to 6.5 V Excellent Linearity (CV Curve) Large Capacitance Ratio (A1 = 4.70 minimum)
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KV1460
OT23-3)
KV1460
OT23-3
IC-xxx-KV1471E
0798O0
diode F6 03
c65 diode
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c65 diode
Abstract: MARKING C6 SOT23 KV1460 marking c65 2A SOT23-3
Text: KV1460 VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • ■ ■ ■ ■ ■ FM Radio ■ Voltage Controlled Oscillator ■ Battery Operated Products Very Low Operating Voltage 1 to 6.5 V Excellent Linearity (CV Curve) Large Capacitance Ratio (A1 = 4.70 minimum)
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KV1460
OT23-3)
KV1460
OT23-3
IC-xxx-KV1460
0300O0
c65 diode
MARKING C6 SOT23
marking c65
2A SOT23-3
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c65 diode
Abstract: KV1590NT KV1590
Text: KV1590NT VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • ■ ■ ■ ■ AM Radio ■ Voltage Controlled Oscillator Very Wide Operating Voltage Range 1 to 6.5 V Excellent Linearity (CV Curve) Large Capacitance Ratio (A = 17 minimum) Two Diodes in a 3 Lead Through-Hole Discrete
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KV1590NT
O92-3)
KV1590NT
O92-3
IC-xxx-KV1471E
0798O0
c65 diode
KV1590
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c65 diode
Abstract: KV1590NT
Text: KV1590NT VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • ■ ■ ■ ■ AM Radio ■ Voltage Controlled Oscillator Very Wide Operating Voltage Range 1 to 6.5 V Excellent Linearity (CV Curve) Large Capacitance Ratio (A = 17 minimum) Two Diodes in a 3 Lead Through-Hole Discrete
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KV1590NT
O92-3)
KV1590NT
O92-3
IC-xxx-KV1471E
0798O0
c65 diode
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Untitled
Abstract: No abstract text available
Text: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN5B2SFH Applications General rectification Land size figure Unit : mm Dimensions (Unit : mm) 6.0 2.3±0.2 0.1 6.5±0.2 6.0 0.5±0.1 C0.5 1.6 0.75 Construction Silicon epitaxial planer
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AEC-Q101
SC-63
R1120A
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PDF
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MOC3052
Abstract: thyristor family MOC3051
Text: MOC3051, MOC3052 OPITCALLY COUPLED ISOLATORS ISOCOM PACKAGES LTD CIRCUIT 7.30 7.30 3.50 6.50 13.0o 0.4 3.0 2.7 0.26 6.5 7.62 1.20 2.54 0.5 13.0o DESCRIPTION The MOC3051 and MOC3052 are constructed from a Gallium Arsenide Infrared Emitting Diode and Silicon
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MOC3051,
MOC3052
MOC3051
thyristor family
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RB088B150
Abstract: diode c05
Text: Data Sheet Schottky Barrier Diode RB088B150 lApplications Switching power supply lExternal Dimensions Unit : mm lLand Size Figure(Unit : mm) 6.0 2.3±0.2 0.1 6.5±0.2 0.5±0.1 (1) (2) 0.65±0.1 (3) 2.5 0.75 0.9 lConstruction Silicon epitaxial CPD 0.5±0.1
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RB088B150
AEC-Q101
SC-63
R1120A
RB088B150
diode c05
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PDF
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RBQ10B65A
Abstract: No abstract text available
Text: Data Sheet Schottky Barrier Diode RBQ10B65A Applications General rectification Dimensions Unit : mm Land size figure (Unit : mm) 6.0 2.3±0.2 0.1 6.5±0.2 0.65±0.1 （2） （3） 2.0 3.0 CPD 0.5±0.1 1.0±0.2 2.3±0.2 2.3±0.2 Construction
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RBQ10B65A
SC-63
R1120A
RBQ10B65A
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RF501B2S
Abstract: No abstract text available
Text: RF501B2S Diodes Fast recovery diode Silicon epitaxial planer RF501B2S zApplications General rectification zLand size figure zExternal dimensions (Unit : mm) 6.0 6.5±0.2 5.1±0.2 0.1 6.0 0.5±0.1 1.5±0.3 C0.5 1.6 9.5±0.6 5.5±0.3 0.1
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RF501B2S
SC-63
RF501B2S
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RBQ10B65A
Abstract: No abstract text available
Text: Data Sheet AEC-Q101 Qualified Schottky Barrier Diode RBQ10B65AFH Dimensions Unit : mm Applications General rectification Land size figure (Unit : mm) 6.0 2.3±0.2 0.1 6.5±0.2 0.65±0.1 （2） （3） 2.0 3.0 CPD 0.5±0.1 1.0±0.2 2.3±0.2 2.3±0.2
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AEC-Q101
RBQ10B65AFH
SC-63
R1120A
RBQ10B65A
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet Schottky Barrier Diode RB088B150 lApplications Switching power supply lExternal Dimensions Unit : mm lLand Size Figure(Unit : mm) 6.0 2.3 0.2 0.1 6.5 0.2 0.5 0.1 (1) (2) 0.65 0.1 (3) 2.5 0.75 0.9 lConstruction Silicon epitaxial CPD 0.5 0.1 2.3 0.2 2.3 0.2
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RB088B150
SC-63
AEC-Q101
R1120A
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RF501B2S
Abstract: No abstract text available
Text: RF501B2S Diodes Fast recovery diode RF501B2S zApplications General rectification zLand size figure zDimensions Unit : mm 6.0 2.3±0.2 0.1 6.5±0.2 0.5±0.1 6.0 1.5±0.3 zFeatures 1) Power mold type (CPD) 2) High reliability 3) Low VF 4) Very fast recovery
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RF501B2S
SC-63
RF501B2S
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RF301B2S
Abstract: No abstract text available
Text: RF301B2S Diodes Fast recovery diode RF301B2S zApplications General rectification z Land size figure Unit : mm z Dimensions (Unit : mm) 6.0 2.3±0.2 0.1 6.5±0.2 （2） （3） 0.75 0.65±0.1 2.3 2.3 CPD 0.5±0.1 2.3±0.2 2.3±0.2 zConstruction
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RF301B2S
SC-63
RF301B2S
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Untitled
Abstract: No abstract text available
Text: RB095B-40 Diodes Schottky barrier diode RB095B-40 zApplications General rectification Common cathode dual chip zLand size figure (Unit : mm) zExternal dimensions (Unit : mm) 6.5±0.2 5.1±0.2 0.1 2.3±0.2 0.1 9.5±0.6 5.5±0.3 0.1
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RB095B-40
SC-63
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RBQ10
Abstract: RBQ10B45A
Text: Data Sheet Schottky Barrier Diode RBQ10B45A lDimensions Unit : mm lLand size figure (Unit : mm) 6.0 2.3±0.2 0.1 6.5±0.2 6.0 0.5±0.1 C0.5 1.5±0.3 5.1±0.2 0.1 0.75 0.9 （1） lConstruction Silicon epitaxial planer 0.65±0.1 （2） （3） 2.5 ① 0.8 min
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RBQ10B45A
SC-63
60Hz1cyc)
200pF
100pF
R1120A
RBQ10
RBQ10B45A
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RB095
Abstract: RB095B-60
Text: RB095B-60 Diodes Schottky barrier diode RB095B-60 zApplications General rectification zLand size figure zExternal dimensions Unit : mm 6.0 6.5±0.2 5.1±0.2 0.1 6.0 0.5±0.1 1.5±0.3 C0.5 9.5±0.6 5.5±0.3 0.1 1.6 1.5 0.75 0.9 zConstruction
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RB095B-60
SC-63
RB095
RB095B-60
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Untitled
Abstract: No abstract text available
Text: RF501B2S Diodes Fast recovery diode RF501B2S zApplications General rectification zLand size figure zDimensions Unit : mm 6.0 6.5±0.2 5.1±0.2 0.1 6.0 0.5±0.1 1.5±0.3 C0.5 1.6 9.5±0.6 5.5±0.3 0.1 1.6 1.5 0.75 2.5 ① 3.0 2.0 zFeatures
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RF501B2S
SC-63
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PDF
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RB085B-30
Abstract: No abstract text available
Text: RB085B-30 Diodes Schottky barrier diode RB085B-30 zApplications General rectification zLand size figure Unit : mm zExternal dimensions (Unit : mm) 6.5±0.2 5.1±0.2 0.1 2.3±0.2 0.1 0.5±0.1 C0.5 9.5±0.6 5.5±0.3 0.1 1.5±0.3
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RB085B-30
SC-63
RB085B-30
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Untitled
Abstract: No abstract text available
Text: RFN5B2S Data Sheet Super Fast Recovery Diode RFN5B2S Dimensions Unit : mm Applications General rectification Land size figure (Unit : mm) 6.0 2.3±0.2 0.1 6.5±0.2 6.0 0.5±0.1 C0.5 9.5±0.5 0.75 （1） 0.9 （2） （3） 2.3±0.2 0.65±0.1
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SC-63
R1120A
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PDF
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RB095B-30
Abstract: No abstract text available
Text: RB095B-30 Diodes Schottky barrier diode RB095B-30 zApplications General rectification zLand size figure zExternal dimensions Unit : mm 6.0 6.5±0.2 5.1±0.2 0.1 1.6 9.5±0.6 5.5±0.3 0.1 1.6 1.5 0.75 2.3 2.3 CPD 2.5 ① 3.0 2.0 0.5±0.1
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RB095B-30
SC-63
RB095B-30
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RB095B-60
Abstract: No abstract text available
Text: RB095B-60 Diodes Schottky barrier diode RB095B-60 zApplications General rectification zLand size figure zDimensions Unit : mm 6.0 6.0 2.3±0.2 0.1 6.5±0.2 0.5±0.1 C0.5 5.1±0.2 0.1 0.75 （1） 0.65±0.1 （2） （3） 1.6 2.3 2.3
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RB095B-60
SC-63
RB095B-60
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