ultra low forward voltage schottky diode
Abstract: diode Schottky diode low voltage high current SC-46 ERA81-004 ERA82-004 ERA83-004 ERA83-006 ERA84-009 ERB81-004
Text: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE
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5V/10A)
ultra low forward voltage schottky diode
diode
Schottky diode low voltage high current
SC-46
ERA81-004
ERA82-004
ERA83-004
ERA83-006
ERA84-009
ERB81-004
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infrared receiver led
Abstract: infrared 5mm 940nm GaAs Infrared photodiode Infrared Phototransistor NTE3027 Infrared Emitting Diode infrared led receiver diode 5v
Text: NTE3027 Infrared Emitting Diode High Speed for Remote Control Description: The NTE3027 Infrared Emitting Diode is a high intensity diode using AlGaAs/GaAs technology molded in a blue transparent plastic standard T-1 3/4 5mm package. This device is spectrally matched for use
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NTE3027
NTE3027
940nm
100mA,
infrared receiver led
infrared 5mm 940nm GaAs
Infrared photodiode
Infrared Phototransistor
Infrared Emitting Diode
infrared led receiver
diode 5v
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Untitled
Abstract: No abstract text available
Text: R9XSMD0475XX WELDING DIODE ELEMENT Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697-1800 724 925-7272 www.pwrx.com 7450 Amperes 400 Volts 3.6mm 1.2mm Deep 5mm RTV Sealant 49.2mm Cathode Contact Anode Contact 56mm Powerex General Purpose Rectifier Diode
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R9XSMD0475XX
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500a diode
Abstract: diode 500A INDUCTION HEATING POWER SUPPLY k1 522 APTDF500U20
Text: APTDF500U20 Single diode Power Module VCES = 200V IC = 500A @ Tc = 80°C Application • Anti-Parallel diode - Switchmode Power Supply - Inverters Snubber diode Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers Electric vehicles
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APTDF500U20
500a diode
diode 500A
INDUCTION HEATING POWER SUPPLY
k1 522
APTDF500U20
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Untitled
Abstract: No abstract text available
Text: APTDF500U20G Single diode Power Module VCES = 200V IC = 500A @ Tc = 80°C Application • Anti-Parallel diode - Switchmode Power Supply - Inverters Snubber diode Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers Electric vehicles
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APTDF500U20G
50/60Hz
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APT0502
Abstract: APTDF500U20G
Text: APTDF500U20G Single diode Power Module VCES = 200V IC = 500A @ Tc = 80°C Application • Anti-Parallel diode - Switchmode Power Supply - Inverters Snubber diode Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers Electric vehicles
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APTDF500U20G
APT0502
APTDF500U20G
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Untitled
Abstract: No abstract text available
Text: R9XSMD0475XX WELDING DIODE ELEMENT Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697-1800 724 925-7272 www.pwrx.com 7450 Amperes 400 Volts Φ 3.6mm 1.2mm Deep 5mm RTV Sealant 49.2mm Cathode Contact Anode Contact 56mm Powerex General Purpose Rectifier Diode
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R9XSMD0475XX
INFORMATIO12000
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h30r1602
Abstract: IHY30N160R2 h30r160 PG-TO247HC-3
Text: IHY30N160R2 Soft Switching Series TrenchStop Reverse Conducting RC- IGBT with monolithic body diode Features: • Powerful monolithic body diode with very low forward voltage • Body diode clamps negative voltages • Trench and fieldstop technology offers:
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IHY30N160R2
O-247HC
h30r1602
IHY30N160R2
h30r160
PG-TO247HC-3
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IC 386
Abstract: NTE3030 light emitting diode LED 5mm LIGHT EMITTING DIODE datasheet light emitting diode flashing red LED diode 226 light emitting diode
Text: NTE3030 Light Emitting Diode LED Diffused Red, Blinking Description: The NTE3030 is a flashing red Light Emitting Diode (LED) with Integral IC in a T−1 3/4 5mm plastic type package. Typical applications include warning lights and status indicators. Features:
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NTE3030
NTE3030
660nm
IC 386
light emitting diode LED
5mm LIGHT EMITTING DIODE
datasheet light emitting diode
flashing red LED
diode 226
light emitting diode
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5mm LIGHT EMITTING DIODE
Abstract: NTE3169 NTE3171 datasheet light emitting diode NHTE3170 NTE3170 NTE316
Text: NTE3169, NHTE3170, NTE3171 Square Light Emitting Diode − 5mm Description: The NTE3169 Bright Red source color is made with Gallium Phosphide on a Gallium Phosphide Red Light Emitting Diode. The NTE3170 (Green) is made with Gallium Phosphide on a Gallium Phosphide
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NTE3169,
NHTE3170,
NTE3171
NTE3169
NTE3170
5mm LIGHT EMITTING DIODE
NTE3169
NTE3171
datasheet light emitting diode
NHTE3170
NTE3170
NTE316
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NTE3030
Abstract: light emitting diode LED diode led
Text: NTE3030 Light Emitting Diode LED Diffused Red, Blinking Description: The NTE3030 is a flashing red Light Emitting Diode (LED) with Integral IC in a T−1 3/4 5mm plastic type package. Typical applications include warning lights and status indicators. Features:
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NTE3030
NTE3030
V-10V
100mW
light emitting diode LED
diode led
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H15R1202
Abstract: IGBT H15R1202 H15R120 IHW15N120R2 PG-TO-247-3-21 600v 20a diode H15R1202 equivalent
Text: IHW15N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers :
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IHW15N120R2
PG-TO-247-3-21
PG-TO247-3-21
180nH
H15R1202
IGBT H15R1202
H15R120
IHW15N120R2
PG-TO-247-3-21
600v 20a diode
H15R1202 equivalent
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H20R1202
Abstract: h20r1202 igbt equivalent H20R1202 equivalent of h20r1202 igbt h20r1202 H20R IHW20N120R2 H20R120 H20R12 igbt 1200V 60A
Text: IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop and Fieldstop technology for 1200 V applications
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IHW20N120R2
IHW20N120R2
H20R1202
h20r1202 igbt
equivalent H20R1202
equivalent of h20r1202
igbt h20r1202
H20R
H20R120
H20R12
igbt 1200V 60A
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H20R120
Abstract: igbt h20r120 h20r H20R12 h20r120 igbt IHW20N120R ALL h20r120 marking h20r120 Reverse Conducting IGBT with monolithic body diode igbt 1200V 60A
Text: IHW20N120R Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop and Fieldstop technology for 1200 V applications
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IHW20N120R
IHW20N120R
H20R120
igbt h20r120
h20r
H20R12
h20r120 igbt
ALL h20r120
marking h20r120
Reverse Conducting IGBT with monolithic body diode
igbt 1200V 60A
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H25R1202
Abstract: IHW25N120R2 IGBT 600V 40A IGBT 1000V .50A IGBT H25R1202 PG-TO-247-3-21 IGBT 600V 40A diode H25R120
Text: IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers :
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IHW25N120R2
PG-TO-247-3-21
H25R1202
IHW25N120R2
IGBT 600V 40A
IGBT 1000V .50A
IGBT H25R1202
PG-TO-247-3-21
IGBT 600V 40A diode
H25R120
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h30r1202
Abstract: h30r120 H30R1202 equivalent igbt h30r1202 "h30r1202" IHW30N120R2 H30R1 H30R
Text: IHW30N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop and Fieldstop technology for 1200 V applications
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IHW30N120R2
IHW30N120R2
h30r1202
h30r120
H30R1202 equivalent
igbt h30r1202
"h30r1202"
H30R1
H30R
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H25R1202
Abstract: IGBT H25R1202 H25R120 IHW25N120R2 H25R12
Text: IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers :
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IHW25N120R2
IHW25N120R2
H25R1202
IGBT H25R1202
H25R120
H25R12
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H20R120
Abstract: h20r120 igbt 20A 500v igbt
Text: IHW20N120R Soft Switching Series ^ Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers :
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IHW20N120R
IHW20N120R
H20R120
h20r120 igbt
20A 500v igbt
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n004
Abstract: MIB57T-K ML303
Text: CRO MEB57T-K INFRARED EMITTING DIODE 04.98 DESCRIPTION " 0 . 196 MIB57T-K is a GaAlAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package. MIB57T-K is spectrally matched to the PIN photo diode ML303.
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MIB57T-K
ML303.
10/iiS,
100mA
100mA
150mW
n004
ML303
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MIB57T-K
Abstract: ML303
Text: MEB57T-K INFRARED EMITTING DIODE 04.98 ’ 0.196 DESCRIPTION MIB57T-K is a GaAlAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package. MIB57T-K is spectrally matched to the PIN photo diode ML303. 6.7
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MEB57T-K
MIB57T-K
B57T-K
ML303.
100mA
150mW
ML303
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MIB57T-K
Abstract: ML303
Text: CRO MEB57T-K INFRARED EMITTING DIODE 04.98 ' 0.196 DESCRIPTION MIB57T-K is a GaAIAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package. MIB57T-K is spectrally matched to the PIN photo diode ML303.
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MIB57T-K
ML303.
10/Lts,
100mA
4351G
100mA
150mW
ML303
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11851
Abstract: MIB51T
Text: CRO MIB51T INFRARED EM ITTING DIODE 04.98 0.196 DESCRIPTION MIB51T is GaAlAs infrared emitting diode molded in T -l 3/4 standard 5mm diameter clear transparent lens. 8.7 (0.34) 1.0 - 2.54(0.1) ABSOLUTE MAXIMUM RATINGS • • • Forward Current (Continuous)
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MIB51T
MIB51T
100mA
160mW
11851
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MI51TA
Abstract: MIB51TA
Text: MI51TA MIB51TA INFRARED EMITTING DIODE DESCRIPTION MI51TA & MIB51TA are GaAlAs infrared emitting diode molded T-l 3/4 standard 5mm diameter clear plastic package, with the lensing effect of the package, and MIB51JA with cup type leadframe. ABSOLUTE MAXIMUM RATINGS
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MIB51TA
MI51TA
MIB51JA
100mA
180mW
MI51TA
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MI51TA
Abstract: MIB51TA em4070
Text: DESCRIPTION CRO MI51TA MIB51TA INFRARED EMITTING DIODE MI51TA & MIB51TA are GaAlAs infrared emitting diode molded T-l 3/4 standard 5mm diameter clear plastic package, with the lensing effect of the package, and MIB51TA with cup type leadframe. ABSOLUTE MAXIMUM RATINGS
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MI51TA
MIB51TA
MIB51TA
MI51TA
em4070
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