ERC20M
Abstract: No abstract text available
Text: ERC20M 5A ( 200V to 800V / 5A ) Outline drawings, mm FAST RECOVERY DIODE 4.5MAX. Ø3.2+0.2 -0.1 10.5MAX. 2.0 17.0±0.3 4.7 6.0 3 3.7 1 13.0MAX. 1.2 0.8 5.08 Features Insulated package fully molding High voltage by mesa design 2.7 0.4 JEDEC EIAJ High reliability
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ERC20M
SC-67
ERC20M
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power Diode 800V 5A
Abstract: ERC20M
Text: ERC20M 5A ( 200V to 800V / 5A ) Outline drawings, mm FAST RECOVERY DIODE 4.5MAX. Ø3.2+0.2 -0.1 10.5MAX. 2.0 17.0±0.3 4.7 6.0 3 3.7 1 13.0MAX. 1.2 0.8 5.08 Features Insulated package fully molding High voltage by mesa design 2.7 0.4 JEDEC EIAJ High reliability
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ERC20M
SC-67
ERC20M
power Diode 800V 5A
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power Diode 800V 5A
Abstract: diode 5A 800V
Text: ERC20M 5A ( 200V to 800V / 5A ) Outline drawings, mm FAST RECOVERY DIODE 4.5MAX. Ø3.2+0.2 -0.1 10.5MAX. 2.0 17.0±0.3 4.7 6.0 3 3.7 1 13.0MAX. 1.2 0.8 5.08 Features Insulated package fully molding High voltage by mesa design 2.7 0.4 JEDEC EIAJ High reliability
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ERC20M
SC-67
ERC20M
power Diode 800V 5A
diode 5A 800V
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Untitled
Abstract: No abstract text available
Text: YG226S8 5A (800V / 5A) Outline drawings, mm FAST RECOVERY DIODE 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 15±0.3 2.7±0.2 6.3 2.7±0.2 3 1 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Insulated package by fully molding High voltage by mesa design
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YG226S8
13Min
SC-67
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PDF
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power Diode 800V 5A
Abstract: No abstract text available
Text: YG226S8 5A (800V / 5A) Outline drawings, mm FAST RECOVERY DIODE 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 15±0.3 2.7±0.2 6.3 2.7±0.2 3 1 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Insulated package by fully molding High voltage by mesa design
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YG226S8
13Min
SC-67
power Diode 800V 5A
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PDF
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YG226S8
Abstract: power Diode 800V 5A Diode 800V 5A 5A 800V
Text: YG226S8 5A (800V / 5A) Outline drawings, mm FAST RECOVERY DIODE 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 15±0.3 2.7±0.2 6.3 2.7±0.2 3 1 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Insulated package by fully molding High voltage by mesa design
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Original
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YG226S8
13Min
SC-67
YG226S8
power Diode 800V 5A
Diode 800V 5A
5A 800V
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PDF
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ERC20
Abstract: No abstract text available
Text: ERC20 5A ( 200V to 800V / 5A ) FAST RECOVERY DIODE Outline drawings, mm 4.5±0.2 Ø3.6+0.2 -0.1 1.32 1 15.0±0.2 6.4 2.7 10.0+0.5 -0 3.7 2 14.0+0-0.5 1.2 0.8±0.2 5.08 0.4+0.2 -0 2.7 Features High voltage by mesa design High reliability JEDEC TO-220AB EIAJ
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ERC20
O-220AB
SC-46
ERC20
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power Diode 800V 5A
Abstract: No abstract text available
Text: ERC20 5A ( 200V to 800V / 5A ) FAST RECOVERY DIODE Outline drawings, mm 4.5±0.2 Ø3.6+0.2 -0.1 1.32 1 15.0±0.2 6.4 2.7 10.0+0.5 -0 3.7 2 14.0+0-0.5 1.2 0.8±0.2 5.08 0.4+0.2 -0 2.7 Features High voltage by mesa design High reliability JEDEC TO-220AB EIAJ
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ERC20
O-220AB
SC-46
ERC20
power Diode 800V 5A
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d400 e
Abstract: power Diode 800V 5A
Text: ERC20 5A ( 200V to 800V / 5A ) FAST RECOVERY DIODE Outline drawings, mm 4.5±0.2 Ø3.6+0.2 -0.1 1.32 1 15.0±0.2 6.4 2.7 10.0+0.5 -0 3.7 2 14.0+0-0.5 1.2 0.8±0.2 5.08 0.4+0.2 -0 2.7 Features High voltage by mesa design High reliability JEDEC TO-220AB EIAJ
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Original
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ERC20
O-220AB
SC-46
te-04
ERC20
d400 e
power Diode 800V 5A
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PDF
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ERC20
Abstract: No abstract text available
Text: ERC20 5A ( 200V to 800V / 5A ) FAST RECOVERY DIODE Outline drawings, mm 4.5±0.2 Ø3.6+0.2 -0.1 1.32 1 15.0±0.2 6.4 2.7 10.0+0.5 -0 3.7 2 14.0+0-0.5 1.2 0.8±0.2 5.08 0.4+0.2 -0 2.7 Features High voltage by mesa design High reliability JEDEC TO-220AB EIAJ
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ERC20
O-220AB
SC-46
ERC20
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SR506 Diode
Abstract: diode 6A 1000v SM4007 Diode Diode SR360 diode her307
Text: Room I, Floor 4, 13 Yip Fung Street, Hong Kong Tel: +86 769 8118 8110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Rectifier List Diode Rectifier Diode Rectifier M7 SMD4001-4007 Diode SR560 (5A 60V) Bulk RoHS. DO-27 S1A -S1M Diode UF4004 (1А 400V) Bulk RoHS. DO-41
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SMD4001-4007)
SR560
DO-27
UF4004
DO-41
UF4007
10A10
LL4148
FR101-FR107
SR506 Diode
diode 6A 1000v
SM4007 Diode
Diode SR360
diode her307
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SCS205KG
Abstract: No abstract text available
Text: SCS205KG SiC Schottky Barrier Diode Datasheet lOutline VR 1200V IF 5A QC 17nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)
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SCS205KG
O-220AC
R1102B
SCS205KG
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Untitled
Abstract: No abstract text available
Text: SCS105KG SiC Schottky Barrier Diode Datasheet lOutline VR 1200V IF 5A QC 20nC TO-220AC 1 (2) lFeatures (3) lInner circuit 1) Shorter recovery time (1) 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)
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SCS105KG
O-220AC
R1102B
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SCS105KG
Abstract: No abstract text available
Text: SCS105KG Datasheet SiC Schottky Barrier Diode lOutline VR 1200V IF 5A QC 20nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)
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SCS105KG
O-220AC
R1102B
SCS105KG
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Untitled
Abstract: No abstract text available
Text: SCS210KE2 SiC Schottky Barrier Diode Datasheet lOutline VR 1200V IF 5A/10A* QC 17nC TO-247 * Per leg / Both legs (1) (2) lFeatures (3) lInner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Anode (2) Cathode (3) Anode 3) High-speed switching possible
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SCS210KE2
A/10A*
O-247
120th
R1102B
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Untitled
Abstract: No abstract text available
Text: S6301 Data Sheet SiC Schottky Barrier Diode Bare Die VR 1200V IF 5A*1 17nC QC lFeatures lInner circuit C 1) Shorter recovery time 2) Reduced temperature dependence (C) Cathode (A) Anode 3) High-speed switching possible (A) lConstruction Silicon carbide epitaxial planer type
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S6301
R1102B
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8EWS08S
Abstract: 8EWS10S 8EWS12S AN-994 8EWS10
Text: Bulletin I2108 rev. G 08/00 SAFEIR Series 8EWS.S SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF Description/Features IFSM = 200A < 1V @ 5A VRRM 800 to 1200V The 8EWS.S rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology
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I2108
8EWS08S
8EWS10S
8EWS12S
AN-994
8EWS10
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8EWS10
Abstract: No abstract text available
Text: Bulletin I2108 rev. G 08/00 SAFEIR Series 8EWS.S SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF Description/Features IFSM = 200A < 1V @ 5A VRRM 800 to 1200V The 8EWS.S rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology
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I2108
08-Mar-07
8EWS10
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8EWS08S
Abstract: 8EWS10S 8EWS12S AN-994
Text: Bulletin I2108 rev. G 08/00 SAFEIR Series 8EWS.S SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF Description/Features IFSM = 200A < 1V @ 5A VRRM 800 to 1200V The 8EWS.S rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology
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I2108
12-Mar-07
8EWS08S
8EWS10S
8EWS12S
AN-994
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PDF
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APT5F100K
Abstract: MIC4452 1000v5a
Text: APT5F100K 1000V, 5A 2.8Ω Max, Trr ≤ 155nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
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APT5F100K
155nS
O-220
FREDFE42
APT5F100K
MIC4452
1000v5a
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D1F40
Abstract: S1ZB40 200v 10A mosfet diode 2f D1F10 DIODE D1F20 S1ZA40 diode rm 62 mosfet 600V 30A S1WB S 40 68
Text: h7>yX^ T ra n sisto r Vi KO 2 S A l 795 2SA1796 2SC4668 2SC4669 -5A -7A 7A 10A MOSFET R e ctifie r Diode Vi is s Id 0.5A 1.0A 1.0A 1.5A V rm Io 1.0A 1.1A 1.4 A Bridge Diode_ V rm 10 0.8A S c h o ttk y B a rrie r Diode ' Io V rm 1.1A 1.6A 3 .0 A
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2SA1796
2SC4668
2SC4669
2SK1194
2SK1672
2SK1533
2SK1195
D1F10
D2F10
D1F20
D1F40
S1ZB40
200v 10A mosfet
diode 2f
DIODE D1F20
S1ZA40
diode rm 62
mosfet 600V 30A
S1WB S 40 68
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S11V
Abstract: Schottky diode TO220 15A 1000V 5tuz47 diode diode schottky 1000V 2a lead 5TUZ47 DO-41SS 20GWJ2CZ47 rectifier 5A 1000V DIP 1R5DL41A 20L6P45
Text: 1 NEW PRODUCTS DIGEST High-Breakdown Voltage 400V, 600V , Hlgh-Efficlency Diode (HEP) For prim ary flywheel use (600V) and secodary rectification use (400V) in com pact, high-efficiency switching pow er supplies. 5GLZ47A : V rrm = 4 0 0 V , IF(av) = 5A, trr« 5 n s
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OCR Scan
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5GLZ47A
5JLZ47
1DL41A
1DL42A
1R5DL41A
3DL41A
DO-41S
DO-15L
S11V
Schottky diode TO220 15A 1000V
5tuz47 diode
diode schottky 1000V 2a lead
5TUZ47
DO-41SS
20GWJ2CZ47
rectifier 5A 1000V DIP
20L6P45
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet 12151 05/98 International IO R Rectifier SAFElR Series 70EPS. R INPUT RECTIFIER DIODE W ) = 13 5A VF < 1.15V@ 70A 'f s m = 900A V RRM 800 to 1600V Description/Features The 70EPS.(R) rectifier SAFElR series has been optimized for very low forward voltage drop, with
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70EPS.
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet 12151 rev. A 12/98 International I R Rectifier SAFElR Series 70EPS. INPUT RECTIFIER DIODE W = 13 5A VF < 1.15V@ 70A 'f s m = 900A VRRM 800 to 1600V Description/Features The 70EPS. rectifier S A F E R series has been optimized for very low forward voltage drop, with
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70EPS.
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PDF
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