Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE 5082- 2800 Search Results

    DIODE 5082- 2800 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 5082- 2800 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5082-2804

    Abstract: 5082-2805 1N5712 5082-2080 2800-Series 5082-2826 5082-XXXX 5082-2811 1N5711 RS-296-D
    Text: Products > RF ICs/Discretes > Schottky Diodes > Axial Glass Packaged > 5082-2835 5082-2835 General purpose Schottky diode All Detail Documents Description Lifecycle status: Active Features The 5082-2835 is a passivated Schottky diode in a low cost glass package. It is optimised for


    Original     		PDF 340mV. 1N5711, 1N5712, 5082-xxxx 5082xxxx 1N5712 5082-28xx T25/1N57xx 5082-2804 5082-2805 1N5712 5082-2080 2800-Series 5082-2826 5082-XXXX 5082-2811 1N5711 RS-296-D

    1N5712

    Abstract: 5082-2800 5082-2826 RS-296-D 1N5711 5082-2080 5082-2805 1N5712 spice
    Text: Products > RF ICs/Discretes > Schottky Diodes > Axial Glass Packaged > 5082-2800 5082-2800 High breakdown general purpose Schottky diode All Detail Documents Description Lifecycle status: Active Features The 5082-28xx family are passivated Schottky barrier diodes which use a patented guard-ring


    Original     		PDF 5082-28xx 1N5711, 1N5712, 5082-xxxx 5082xxxx 1N5712 T25/1N57xx 1N5712 5082-2800 5082-2826 RS-296-D 1N5711 5082-2080 5082-2805 1N5712 spice

    diode 5082-2800

    Abstract: 50822800
    Text: 5082-2800 SCHOTTKY BARRIER DIODE PACKAGE STYLE 01 DESCRIPTION: The ASI 5082-2800 is a Silicon Small Signal Schottky Diode Designed for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. MAXIMUM RATINGS I 35 mA V 70 V PDISS


    Original     		PDF

    diode 5082-2800

    Abstract: diode 5082-2800 datasheet UHF/VHF
    Text: 5082-2800 SCHOTTKY BARRIER DIODE PACKAGE STYLE 01 DESCRIPTION: The ASI 5082-2800 is a Silicon Small Signal Schottky Diode Designed for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. MAXIMUM RATINGS I 35 mA V 70 V PDISS


    Original     		PDF

    diode t25 13 Go

    Abstract: 1N5712 DIODE T25 1N5712 spice DIODE T25 4 1N5711 spice 1n5711 5082-XXXX 1n5711 equivalent AVAGO 5082-2811
    Text: 1N5711, 1N5712, 5082-2800 Series Schottky Barrier Diodes for General Purpose Applications Data Sheet Description/Applications Features The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high break­down voltage. Packaged in


    Original     		PDF 1N5711, 1N5712, 1N5712 5082-28xx T25/1N57xx 1N57xx 5082-28xx/ diode t25 13 Go 1N5712 DIODE T25 1N5712 spice DIODE T25 4 1N5711 spice 1n5711 5082-XXXX 1n5711 equivalent AVAGO 5082-2811

    IR 10e

    Abstract: 1N5711 spice 1N5711 1N5712 spice 1n5711 equivalent 5082-2826 F 5082 1N5712 IN5712 RS-296-D
    Text: Agilent 1N5711, 1N5712, 5082-2300 Series, 5082-2800 Series, 5082-2900 Schottky Barrier Diodes for General Purpose Applications Data Sheet Features Description/Applications The 1N5711, 1N5712, 5082-2800/ 10/11 are passivated Schottky barrier diodes which use a


    Original     		PDF 1N5711, 1N5712, 5082-28xx/ 1N57xx 5968-7181E 5989-3338EN IR 10e 1N5711 spice 1N5711 1N5712 spice 1n5711 equivalent 5082-2826 F 5082 1N5712 IN5712 RS-296-D

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


    Original     		PDF

    1N5712 spice

    Abstract: 1N5711 spice 1N5712 1N5711 5082-2804 2800-Series 5082-2811 RS-296-D
    Text: Products > RF ICs/Discretes > Schottky Diodes > Axial Glass Packaged > 1N5711 1N5711 Low 1/f noise general purpose Schottky diode Description Lifecycle status: Active Features The 1N5711 and 1N5712 are passivated Schottky barrier diodes which use a patented


    Original     		PDF 1N5711 1N5711 1N5712 1N5711, 1N5712, 5082-xxxx 5082xxxx 1N5712 spice 1N5711 spice 5082-2804 2800-Series 5082-2811 RS-296-D

    diode hp 2835 schottky

    Abstract: diode hp 2800 hp2811 5966-0930E diode hp 2811 1N5711 1N5712 IN5712 RS-296-D 1N5712 spice
    Text: Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Description/Applications


    Original     		PDF 1N5711, 1N5712, 1N5711 1N5712 5966-0930E 5967-5767E diode hp 2835 schottky diode hp 2800 hp2811 5966-0930E diode hp 2811 1N5711 1N5712 IN5712 RS-296-D 1N5712 spice

    5082-2970

    Abstract: 1N5711 spice 5082-2805 in5712 5082-2804 5082-2912 HP2.811 5082-2800 5082-2835 1N5712
    Text: Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Description/Applications


    Original     		PDF 1N5711, 1N5712, 1N5711 1N5712 5082-XXXX 5082-2970 1N5711 spice 5082-2805 in5712 5082-2804 5082-2912 HP2.811 5082-2800 5082-2835 1N5712

    HP 5082-2835

    Abstract: HP 5082-2810 HP 2835 diode hp 2800 diode hp 5082- 2080 HP 5082-2900 HP 2804 HP 5082-2800 1N5711 spice in5712
    Text: Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Description/Applications


    Original     		PDF 1N5711, 1N5712, 1N5711 1N5712 5967-5767E 5968-4304E HP 5082-2835 HP 5082-2810 HP 2835 diode hp 2800 diode hp 5082- 2080 HP 5082-2900 HP 2804 HP 5082-2800 1N5711 spice in5712

    diode 5082-3080

    Abstract: 5082-2804 5082-2835 diode 5082-2800 datasheet in5712 1N5712 spice IR 10e 5082-2810 F 5082 1N5711
    Text: Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Description/Applications


    Original     		PDF 1N5711, 1N5712, 1N5711 1N5712 5082-xxxx 5082-xxxx 5968-4304E diode 5082-3080 5082-2804 5082-2835 diode 5082-2800 datasheet in5712 1N5712 spice IR 10e 5082-2810 F 5082 1N5711

    IR 10e

    Abstract: HP2.811 IN5712 diode 10e 1N5712 1N5712 spice 1N5711 RS-296-D 5082-2811 diode 5082-2800
    Text: Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Description/Applications


    Original     		PDF 1N5711, 1N5712, 1N5711 1N5712 5082-XXXX IR 10e HP2.811 IN5712 diode 10e 1N5712 1N5712 spice 1N5711 RS-296-D 5082-2811 diode 5082-2800

    diode 5082-2800

    Abstract: hp 5082-2800 diode Germanium Schottky diode handling of beam lead diodes 5082-2837
    Text: Whpl mi'tiM H E W LE T T PA C K A R D Beam Lead Schottky Diode Technical Data 5082-2837 Features • Fast Switching • High Breakdown • Beam Lead Equivalent of 5082-2800 • Platinum Tri-Metal System • Wide Temperature Range • SIOa Passivation Description


    OCR Scan     		PDF

    diode hp 2835 schottky

    Abstract: diode hp 2900 5082-2912 5082-2800 HP2811 UHF schottky diode 5082-2970 diode hp 5082-2080 1N5711
    Text: WEM HEW LETT 1 itiM PACKARD Schottky Barrier Diodes fo General Purpose Application Technical Data Features • Low Tum-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available


    OCR Scan     		PDF 1N5711 1N5712 5082-XXXX 5965-8844E 5966-0930E diode hp 2835 schottky diode hp 2900 5082-2912 5082-2800 HP2811 UHF schottky diode 5082-2970 diode hp 5082-2080

    5082-2815

    Abstract: 5082-2370 1n5712 5082-2813 150 AVP 5082-2800 diode 5082-2800 1N5711 5082-2811
    Text: Ihp% 1"KM Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Description/


    OCR Scan     		PDF 1N5711, JAN1N5711/TX/TXV 1N5712 JAN1N5712/TX/TXV 1N5711 5082-2815 5082-2370 5082-2813 150 AVP 5082-2800 diode 5082-2800 5082-2811

    5082-2815

    Abstract: 5082-2970 5082-2805 5082-2813 5082-2308 5082-2804 diode+hp+2835+schottky 5082-2826 5082-2997 5082-2912
    Text: HEWLETT-PACKARD i CMPNTS HEWLETT PACKARD 20E D E3 4 447584 OOOSfc.37 0 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 0,41 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS


    OCR Scan     		PDF 0005fc 1N5711 1N5712 1N5711, 1N5712, i712- 1n57h 1n5712 5082-2815 5082-2970 5082-2805 5082-2813 5082-2308 5082-2804 diode+hp+2835+schottky 5082-2826 5082-2997 5082-2912

    HSMS-0002

    Abstract: HSMS-0003 5082-0024 5082-0087 5082-2713 5082-0097
    Text: HÉULETT-PACKARDn C MP N T S HEWLETT PACKARD 5 OE D 4H475A4 SCHOTTKY BARRIER CHIPS FOR HYBRID INTEGRATED CIRCUITS OOOSSTf l 5082-0009 5082-0013 5082-0023 5082-0024 5082-0029 5082-0041 5082-0087 5082-0097 S 5082-9891 HS MS-0001 HSMS-0011 HSMS-0002 HSMS-0012


    OCR Scan     		PDF 4H475A4 MS-0001 HSMS-0011 HSMS-0002 HSMS-0012 HSMS-0003 HSMS-0013 HSMS-00XX approximately280 5082-0024 5082-0087 5082-2713 5082-0097

    5082-2815

    Abstract: 5082-2970 HSCH-1001 diode hp 2835 schottky 5082-2370 5082-2997 diode hp 2811 HSCH-1001 5082-2800 5082-2813 5082-2805
    Text: ^5ñ d ÉT| 4 4 4 7 £ ú 4 DDGaf l 31 3 4 4 4 7 5 8 ^ H E WL E T T - P A C K A R D » m 5 8C CMPNTS HEWLETT PACKARD 02831 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS d T-07 -*7 1N5711* 1N5712* 5082-2301 5082-2302 5082-2303 5082-2305 5082-2800/10/11/35*


    OCR Scan     		PDF 1N5711* 1N5712* HSCH-1001 1N6263I* 1N5711, 1N5712, 1N5711 1N5711) 5082-2815 5082-2970 HSCH-1001 diode hp 2835 schottky 5082-2370 5082-2997 diode hp 2811 HSCH-1001 5082-2800 5082-2813 5082-2805

    5082-2815

    Abstract: No abstract text available
    Text: HEWLETT-PACKARD. CUPNTS HEWLETT PACKARD 20E D B 44475fi4 OOQSt.37 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 0.41 D a 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS


    OCR Scan     		PDF 44475fi4 1N5711 1N5712 1N5711, 1N5712, Figure12. 5082-2815

    5082-2811

    Abstract: No abstract text available
    Text: warn H EW L E T T m¡3¡M PA CK A R D Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 niA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics


    OCR Scan     		PDF 1N5711 1N5712 5082-XXXX 5082-2811

    HSMS 2841

    Abstract: HSMS-2841 HSCH-5337 5082-2815 HSMS2841 62w sot-23 HSMS2801 HSMS0001 diode SOT-143 Marking Code A5 HSMS-0002
    Text: Surface Mount Schottky Diodes A vailable C onfigurations SOT-23 DIE VBR P GLASS SINGLE ? SINGLE SOT-143 COMMON ANODE SERIES A COMMON CATHODE A UNCON­ NECTED PAIR ’’ RING QUAD BRIDGE QUAD —M - HSMS-0001 70 V 5082-2800 HSMS-2800 HSMS-2801 HSMS-2802 HSMS-2803


    OCR Scan     		PDF OT-23 OT-143 HSMS-0001 HSMS-0002 HSMS-2804 HSMS-2814 HSMS-2824 HSMS-2800 HSMS-2801 HSMS-2802 HSMS 2841 HSMS-2841 HSCH-5337 5082-2815 HSMS2841 62w sot-23 HSMS2801 HSMS0001 diode SOT-143 Marking Code A5

    5082-2815

    Abstract: 5082-2970 diode hp 2835 schottky 5082-2997 5082-2813 5082-2912 diode hp 2811 diode 5082-1001 diode 5082-1002 1N5712
    Text: W K3Ì HEWLETT lb"HM PACKARD Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics


    OCR Scan     		PDF 1N5711, JAN1N5711/TX/TXV 1N5712, JAN1N5712/TX/TXV 1N5711 1N5712 5082-IIB -i-1750C 5082-2815 5082-2970 diode hp 2835 schottky 5082-2997 5082-2813 5082-2912 diode hp 2811 diode 5082-1001 diode 5082-1002

    diode hpa 2800

    Abstract: 5082-2815 1N5712 B2B diode 5082-2805 5082-2997 5082-2804 5082-2800 5082-2301
    Text: HEWLETT-PACKARD/ CMPNTS blE D • 4447564 QQOIbeb 7ST * H P A Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V


    OCR Scan     		PDF 1N5711, JAN1N5711/TX/TXV 1N5712, JAN1N5712/TX/TXV 1N5711 1N5712 diode hpa 2800 5082-2815 B2B diode 5082-2805 5082-2997 5082-2804 5082-2800 5082-2301