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    DIODE 47V 4A Search Results

    DIODE 47V 4A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 47V 4A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    lt 5240

    Abstract: GPS05094
    Text: Addendum for PCN 2004-018-A BTS 5240 G Addendum for PCN-Datasheet 2004-018-A: BTS 5240 G This Addendum and PCN-Datasheet refers to the PCN 2004-018-A: “Minor datasheet adaption for BTS 5240 L, BTS 5240 G, BTS 5440 G “. The PCN-datasheet attached will be valid starting from August 2004.


    Original     		PDF 004-018-A 004-018-A: 5240G 2004-Mar-08 lt 5240 GPS05094

    ANSI/EOS

    Abstract: BTS 330 Q67060-S6136 BTS5440G
    Text: BTS 5440G Smart High-Side Power Switch Four Channels: 4 x 25mΩ IntelliSense Product Summary Operating voltage Package V bb on 4,5.28 V ( Loaddump: 40 V ) Active channels one four parallel On-state resistance RON 25 6.5 Nominal load current IL(nom) 6.2


    Original     		PDF 5440G P-DSO-28 ANSI/EOS BTS 330 Q67060-S6136 BTS5440G

    lt 5240

    Abstract: BTS 5240 L Q67060-S6135
    Text: Addendum for PCN 2004-018-A BTS 5240 L Addendum for PCN-Datasheet 2004-018-A: BTS 5240 L This Addendum and PCN-Datasheet refers to the PCN 2004-018-A: “Minor datasheet adaption for BTS 5240 L, BTS 5240 G, BTS 5440 G “. The PCN-datasheet attached will be valid starting from August 2004.


    Original     		PDF 004-018-A 004-018-A: 5240L 2004-Mar-08 lt 5240 BTS 5240 L Q67060-S6135

    5240G

    Abstract: No abstract text available
    Text: BTS 5240G Smart High-Side Power Switch Two Channels: 2 x 25mΩ IntelliSense Package Product Summary Operating voltage V bb on 4,5.28 V ( Loaddump: 40 V ) Active channels one two parallel On-state resistance RON 25 13 mΩ Nominal load current IL(nom) 5.9


    Original     		PDF 5240G P-DSO-20-1, GPS05094 5240G

    GPS05094

    Abstract: No abstract text available
    Text: BTS 5240G Smart High-Side Power Switch Two Channels: 2 x 25mΩ IntelliSense Package Product Summary Operating voltage V bb on 4,5.28 V ( Loaddump: 40 V ) Active channels one two parallel On-state resistance RON 25 13 mΩ Nominal load current IL(nom) 5.9


    Original     		PDF 5240G P-DSO-20-1, 2003-Oct-01 GPS05094

    Q67060-S6136

    Abstract: BTS5440G
    Text: BTS 5440G Smart High-Side Power Switch Four Channels: 4 x 25mΩ IntelliSense Package Product Summary Operating voltage V bb on 4,5.28 V ( Loaddump: 40 V ) Active channels one four parallel On-state resistance RON 25 6.5 Nominal load current IL(nom) 6.2


    Original     		PDF 5440G P-DSO-28-19 2003-Oct-01 Q67060-S6136 BTS5440G

    Untitled

    Abstract: No abstract text available
    Text: BTS 5440G Smart High-Side Power Switch Four Channels: 4 x 25mΩ IntelliSense Package Product Summary Operating voltage V bb on 4,5.28 V ( Loaddump: 40 V ) Active channels one four parallel On-state resistance RON 25 6.5 Nominal load current IL(nom) 6.2


    Original     		PDF 5440G P-DSO-28-19

    Untitled

    Abstract: No abstract text available
    Text: BTS 5240L Smart High-Side Power Switch Two Channels: 2 x 25mΩ IntelliSense Package Product Summary Operating voltage Vbb on 4,5.28 V ( Loaddump: 40 V ) Active channels one two parallel On-state resistance RON 25 13 mΩ Nominal load current IL(nom) 6


    Original     		PDF 5240L P-DSO-12-2

    Untitled

    Abstract: No abstract text available
    Text: BTS 5240L Smart High-Side Power Switch Two Channels: 2 x 25mΩ IntelliSense Package Product Summary Operating voltage V bb on 4,5.28 V ( Loaddump: 40 V ) Active channels one two parallel On-state resistance RON 25 13 mΩ Nominal load current IL(nom) 6


    Original     		PDF 5240L P-DSO-12-2 2003-Oct-01

    Untitled

    Abstract: No abstract text available
    Text: BTS 5440G Smart High-Side Power Switch Four Channels: 4 x 25mΩ IntelliSense Package Product Summary Operating voltage Vbb on 4,5.28 V ( Loaddump: 40 V ) Active channels one four parallel On-state resistance RON 25 6.5 Nominal load current IL(nom) 6.2


    Original     		PDF 5440G P-DSO-28-19

    Untitled

    Abstract: No abstract text available
    Text: BTS 5240L Smart High-Side Power Switch Two Channels: 2 x 25mΩ IntelliSense Package Product Summary Operating voltage V bb on 4,5.28 V ( Loaddump: 40 V ) Active channels one two parallel On-state resistance RON 25 13 mΩ Nominal load current IL(nom) 6


    Original     		PDF 5240L P-DSO-12-2

    INFINEON PART MARKING BTS

    Abstract: SCR gate Control IC GPS05094
    Text: BTS 5240G Smart High-Side Power Switch Two Channels: 2 x 25mΩ IntelliSense Product Summary Operating voltage Package V bb on 4,5.28 V ( Loaddump: 40 V ) Active channels one two parallel On-state resistance RON 25 13 mΩ Nominal load current IL(nom) 5.9


    Original     		PDF 5240G INFINEON PART MARKING BTS SCR gate Control IC GPS05094

    colour code diode zener

    Abstract: BAR99 s790 FMMD6050 ZC830 diode marking code W5 diode marking x6 SOT-23 MARKING w5 W9 diode ZC830B
    Text: H D 2A I FERRANTI HD3A nr 11semiconductors L H D 4A High Speed S w itching Diodes D ES C R IPTIO N These devices applications. are intend ed fo r high speed s w itch ing * Encapsulated in th e popular SOT-23 p ackage th e device is designed specifically fo r use in thin and th ic k film hybrid


    OCR Scan     		PDF OT-23 C9/c20 50MHz ZC830A ZC831A ZC832A ZC833A ZC834A colour code diode zener BAR99 s790 FMMD6050 ZC830 diode marking code W5 diode marking x6 SOT-23 MARKING w5 W9 diode ZC830B

    ZC832A

    Abstract: FMMD914 ZC830A ZC831A ZC833A ZC834A ZC835A ZC836A ZC836B ferranti
    Text: i FERRANTI semiconductors ZC830A Series Silicon Variable Capacitance Diodes DESCRIPTION These silicon ion-im planted hyperabrupt tuning diodes are intended fo r use in HF, VH F and UHF electronic tuning and frequency control applications w here large capaci­


    OCR Scan     		PDF ZC830A OT-23 C9/C20 50MHz ZC831A ZC832A ZC833A FMMD914 ZC834A ZC835A ZC836A ZC836B ferranti

    FMMD6050

    Abstract: Q953 diode marking code YF Z6 DIODE BAL99 BAR99 BAS16 BAV70 BZX84-C43 BZX84-C47
    Text: FERRANTI 4 semiconductors FMMD6050 • High Speed Sw itching Diode DESCRIPTION This device is intended for high speed switching applications. Encapsulated in the popular SOT-23 package this device is designed specifically for use in thin and thick film hybrid


    OCR Scan     		PDF FMMD6050 OT-23 C9/C20 50MHz ZC830A ZC831A ZC832A ZC833A FMMD6050 Q953 diode marking code YF Z6 DIODE BAL99 BAR99 BAS16 BAV70 BZX84-C43 BZX84-C47

    FMMD6050

    Abstract: E2 marking diode Diode Marking z3 SOT-23 BAR99 diode marking x6 Z6 DIODE BAL99 BAS16 SOT diode marking Z3 BAV74
    Text: FERRANTI semiconductors BAL99 High Speed S w itching Diode DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film


    OCR Scan     		PDF BAL99 OT-23 BAL99 C9/C20 50MHz ZC830A ZC831A ZC832A FMMD6050 E2 marking diode Diode Marking z3 SOT-23 BAR99 diode marking x6 Z6 DIODE BAS16 SOT diode marking Z3 BAV74

    MARKING YA SOT-23

    Abstract: w56 transistor MARKING YA J3 SOT-23 ZC831 sot-23 marking YA Diode Marking z3 SOT-23 DIODE W7 BZX84C12 BAR99 BAS16
    Text: I FERRANTI T IIsemiconductorsL BAW56 High Speed S w itc h in g D iode Pair C om m on A node DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in th in and th ick fiiim


    OCR Scan     		PDF BAW56 OT-23 BAW56 C9/C20 50MHz ZC830A ZC831A ZC832A MARKING YA SOT-23 w56 transistor MARKING YA J3 SOT-23 ZC831 sot-23 marking YA Diode Marking z3 SOT-23 DIODE W7 BZX84C12 BAR99 BAS16

    BAV99 Zener diode

    Abstract: Diode Marking z3 SOT-23 marking code J1 sot23 transistors bav99 BAV99a7 Marking c9 SOT23 marking w7 sot-23 BAL99 BAV70 BAV74
    Text: FERRANTI semiconductors BAV99 Hi gh Speed S w i t c h i n g Series D io de Pair DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film


    OCR Scan     		PDF BAV99 OT-23 BAV99 C9/C20 50MHz ZC830A ZC831A ZC832A BAV99 Zener diode Diode Marking z3 SOT-23 marking code J1 sot23 transistors bav99 BAV99a7 Marking c9 SOT23 marking w7 sot-23 BAL99 BAV70 BAV74

    C6V2 ST

    Abstract: FMMD6050 diode marking w9 06 Diode Marking z3 SOT-23 BAV74-JA BAL99 BAR99 BAV70 BAV74 BZX84-C43
    Text: FERRANTI semiconductors BAV74 High Speed S w itc h in g Diode Pair Comrhon Cathode DESCRIPTION These devices are intended fo r high speed sw itching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film


    OCR Scan     		PDF BAV74 OT-23 BAV74 C9/C20 50MHz ZC830A ZC831A ZC832A ZC833A C6V2 ST FMMD6050 diode marking w9 06 Diode Marking z3 SOT-23 BAV74-JA BAL99 BAR99 BAV70 BZX84-C43

    5D marking DIODE BAS16

    Abstract: Zener Diode LF marking BAS 20 SOT23 DIODE MARKING CODE TW marking C20 sot-23 Y1 SOT-23 Ferranti Semiconductors diode marking w8 7y sot23 Diode Marking z3 SOT-23
    Text: FERRANTI i semiconductors BAS16 High Speed Sw itching Diode DESCRIPTION This device is intended for high speed switching applications. Encapsulated in the popular SOT-23 package this device is designed specifically for use in thin and thick film hybrid


    OCR Scan     		PDF BAS16 OT-23 C9/C20 50MHz ZC830A ZC831A ZC832A ZC833A 5D marking DIODE BAS16 Zener Diode LF marking BAS 20 SOT23 DIODE MARKING CODE TW marking C20 sot-23 Y1 SOT-23 Ferranti Semiconductors diode marking w8 7y sot23 Diode Marking z3 SOT-23

    FMMD914

    Abstract: FMMD6050 Z6 DIODE FMMD marking Z1 sot ZC830B BAL99 BAR99 sot-23 MARKING CODE A4 BAV70
    Text: * FERRANTI semiconductors F M M D 914 High Speed Sw itching Diode D E S C R IP TIO N These devices are intend ed fo r high speed s w itc h in g ap p licatio n s. Encapsulated in th e p op u lar S O T -2 3 package th ese devices are designed s p e c ific a lly fo r use in th in and th ic k film


    OCR Scan     		PDF OT-23 C9/C20 50MHz ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A FMMD914 FMMD6050 Z6 DIODE FMMD marking Z1 sot ZC830B BAL99 BAR99 sot-23 MARKING CODE A4 BAV70

    Diode Marking z3 SOT-23

    Abstract: dual diode marking A3 code J4 diode W6 13A Diode marking J6 transistors diode marking x6 sot-23 MARKING CODE j3 marking W6 diode BAV-99 j4 DIODE schottky sot 23
    Text: FERRANTI i semiconductors ZC830A Series S ilic o n Variable C ap a citan ce D iodes DESCRIPTION These silicon ion-im planted hyperabrupt tuning diodes are intended fo r use in HF, VH F and UHF electronic tuning and frequency control applications w here large capaci­


    OCR Scan     		PDF ZC830A OT-23 C9/C20 50MHz ZC831A ZC832A ZC833A Diode Marking z3 SOT-23 dual diode marking A3 code J4 diode W6 13A Diode marking J6 transistors diode marking x6 sot-23 MARKING CODE j3 marking W6 diode BAV-99 j4 DIODE schottky sot 23

    Diode Marking z3 SOT-23

    Abstract: BAR99 FMMD6050 diode marking x6 Z6 DIODE BAL99 BAS16 BAV70 BAV74 BAV99
    Text: * FERRANTI semiconductors BAR99 High Speed Sw itching Diode DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film


    OCR Scan     		PDF BAR99 OT-23 BAR99 C9/C20 50MHz ZC830A ZC831A ZC832A Diode Marking z3 SOT-23 FMMD6050 diode marking x6 Z6 DIODE BAL99 BAS16 BAV70 BAV74 BAV99