50-12P1
Abstract: No abstract text available
Text: VKI 50-12P1 IC25 = 49 A = 1200 V VCES VCE sat typ. = 3.1 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 B3 X18 L9 Pin arangement see outlines T16 O7 S18
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50-12P1
42T120
50-12P1
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50-12P1
Abstract: S2485
Text: VKI 50-12P1 IC25 = 49 A = 1200 V VCES VCE sat typ. = 3.1 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 Pin arangement see outlines T16 t O7 S18 Features
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50-12P1
42T120
50-12P1
S2485
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50-12P1
Abstract: PSHI50-12 pshi50
Text: ECO-PACTM 2 PSHI 50/12* IGBT Module IC25 = 49 A VCES = 1200 V VCE sat typ. = 3.1 V Preliminary Data Sheet F10 K10 K13 H13 A1 S18 N9 NTC P18 PSHI 50/12* *NTC optional IGBTs Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C VGES IC25 IC80 TC = 25°C
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42T120
50-12P1
50-12P1
PSHI50-12
pshi50
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ntc 50d 9
Abstract: No abstract text available
Text: ECO-PACTM 2 PSHI 50D/12* IGBT Module IC25 = 49 A VCES = 1200 V VCE sat typ. = 3.1 V Preliminary Data Sheet Short Circuit SOA Capability Square RBSOA F10 A1 H13 S18 N9 IGBTs Symbol Conditions VCES TVJ = 25°C to 150°C NTC PSHI 50D/12* Maximum Ratings VGES
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50D/12*
42T120
50-12P1
ntc 50d 9
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H11NXM
Abstract: H11N1M
Text: 6-PIN DIP HIGH SPEED LOGIC OPTOCOUPLERS H11N1-M H11N2-M H11N3-M PACKAGE SCHEMATIC ANODE 1 6 VCC 6 6 CATHODE 2 5 GND 1 1 3 4 VO 6 1 DESCRIPTION The H11NX-M series has a high speed integrated circuit detector optically coupled to an AlGaAs infrared emitting diode.
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H11N1-M
H11N2-M
H11N3-M
H11NX-M
P01101866
CR/0117
E90700,
H11NXM
H11N1M
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17434
Abstract: 343 "cross-reference" opto cross reference 4n35f 4n26f 94766 H11A1 "cross reference" 4N25M H11A4 4N35M
Text: GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 4N25 4N37 4N26 H11A1 4N27 H11A2 WHITE PACKAGE -M SUFFIX 4N35 H11A4 4N36 H11A5 SCHEMATIC 6 1 4N28 H11A3 1 6 2 5 6 3 NC 4 1 PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 6 1 BLACK PACKAGE (NO -M SUFFIX)
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H11A1
H11A2
H11A3
H11A4
H11A5
E90700)
4N25V-M)
4N25-M
/imaging/BITTING/cpl/20020725
10/FAIR/07252002/4N37-M
17434
343 "cross-reference"
opto cross reference
4n35f
4n26f
94766
H11A1 "cross reference"
4N25M
H11A4
4N35M
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H11AV2
Abstract: H11AV1A H11AV1M
Text: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum
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H11AV1
H11AV2
P01101866
CR/0117
E90700,
H11AV1A
H11AV1M
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H11AV1
Abstract: H11AV2 H11AV1A H11AV2A H11AV1M
Text: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum
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H11AV1
H11AV2
H11AV2SR2V-M
H11AV2SV-M
P01101866
CR/0117
E90700,
H11AV1A
H11AV2A
H11AV1M
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4N37 "cross reference"
Abstract: TD 6pin 4N35M
Text: GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 4N25 4N37 4N26 H11A1 4N27 H11A2 WHITE PACKAGE -M SUFFIX 4N35 H11A4 4N36 H11A5 SCHEMATIC 6 1 4N28 H11A3 1 6 2 5 6 3 NC 4 1 PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 6 1 BLACK PACKAGE (NO -M SUFFIX)
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H11A1
H11A2
H11A3
H11A4
H11A5
4N25-M
E90700)
4N25V-M)
4N37-M
P01101866
4N37 "cross reference"
TD 6pin
4N35M
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secos gmbh
Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers
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SGSR809-A
SC-59
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
c945 p 331 transistor npn
SM2150AM
SM1150AM
c945 p 331 transistor
SMBJ11CA
2sd2142
SM4005A
SSG8
pzt649
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secos gmbh
Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3
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SC-59
SGSR809-A
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
SMBJ11CA
SM4005A
SMBJ130CA
SMBJ14CA
SMBJ16CA
SMBJ160CA
BZV55C6V2
BZV55C12
SMBJ13CA
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H10N
Abstract: mosfet 650v H10N65
Text: HI-SINCERITY Spec. No. : MOS200906 Issued Date : 2009.03.23 Revised Date :2009.08.05 Page No. : 1/6 MICROELECTRONICS CORP. H10N65 Series H10N65 Series Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Power MOSFET 650V,10A
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MOS200906
H10N65
O-220AB
O-220FP)
183oC
217oC
260oC
H10N
mosfet 650v
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A15420
Abstract: 01-A15420 74ABT16 74ABT16240A dl 750 philips
Text: INTEGRATED CIRCUITS 74ABT16240A 16-bit inverting buffer/driver 3-State Product data Replaces data sheet 74ABT/H16240A of 1998 Feb 25 Philips Semiconductors 2004 Feb 12 Philips Semiconductors Product data 16-bit inverting buffer/driver (3-State) FEATURES
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74ABT16240A
16-bit
74ABT/H16240A
64mA/-32mA
500mA
74ABT16240A
A15420
01-A15420
74ABT16
dl 750 philips
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2D21
Abstract: 74ABT16273
Text: INTEGRATED CIRCUITS 74ABT16273 16-bit D-type flip-flop Product data Replaces data sheet 74ABT/H16273 of 1998 Feb 27 Philips Semiconductors 2004 Feb 12 Philips Semiconductors Product data 16-bit D-type flip-flop 74ABT16273 FEATURES DESCRIPTION • 16-bit D-type edge triggered flip-flops
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74ABT16273
16-bit
74ABT/H16273
500mA
74ABT16273
2D21
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fairchild 1011 opto
Abstract: cj 6PIN H11L1SR2M H11L1M
Text: 6-PIN DIP OPTOISOLATORS LOGIC OUTPUT H11L1M H11L2M H11L3M DESCRIPTION The H11LX series has a high speed integrated circuit detector optically coupled to a gallium-arsenide infrared emitting diode. The output incorporates a Schmitt trigger, which provides hysteresis for noise immunity and
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H11L1M
H11LX
H11L2M
H11L3M
H11L3-M
P01101866
CR/0117
E90700,
fairchild 1011 opto
cj 6PIN
H11L1SR2M
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H11D3
Abstract: RBE1
Text: H11D1/H11D2/H11D3 PHOTOTRANSISTOR, 5.3 KV, TRIOS HIGH BVCER VOLTAGE OPTOCOUPLER FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage - H11D1/H11D2, BVCER=300 V
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H11D1/H11D2/H11D3
H11D1/H11D2,
H11D3,
E52744
H11D1/2/3
H11D1/2/3
H11D3
RBE1
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H11D3
Abstract: DSA0011162
Text: H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVCER Voltage Optocoupler FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage
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H11D1/H11D2/H11D3/H11D4
H11D1/H11D2,
H11D3/H11D4,
E52744
H11D1/2/3/4
17-August-01
H11D3
DSA0011162
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H11D3
Abstract: OPTO H11D1
Text: H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVCER Voltage Optocoupler FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage
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H11D1/H11D2/H11D3/H11D4
H11D1/H11D2,
H11D3/H11D4,
E52744
H11D1/2/3/4
1-888-Infineon
H11D1/2/3/4
H11D3
OPTO H11D1
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H11D1
Abstract: H11D3 h11d3-d4 H11D12
Text: H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVCER Voltage Optocoupler FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage
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H11D1/H11D2/H11D3/H11D4
H11D1/H11D2,
H11D3/H11D4,
E52744
H11D1/2/3/4
1-888-Infineon
H11D1/2/3/4
H11D1
H11D3
h11d3-d4
H11D12
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pcb diagram welding inverter
Abstract: CIRCUIT diagram welding inverter MIXA20W1200MC marking W18 g14 DIODE marking C5 marking diode airconditioning inverter circuit WELDING INVERTER DIAGRAM
Text: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Preliminary data Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive
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MIXA20W1200MC
20091002a
pcb diagram welding inverter
CIRCUIT diagram welding inverter
MIXA20W1200MC
marking W18
g14 DIODE marking
C5 marking diode
airconditioning inverter circuit
WELDING INVERTER DIAGRAM
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H11D3
Abstract: No abstract text available
Text: g y, , H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVCER Voltage Optocoupler FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage
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H11D1/H11D2/H11D3/H11D4
H11D1/H11D2,
H11D3/H11D4,
E52744
H11D1/2/3
H11D1/2/3/4
H11D3
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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H11BX522
Abstract: 2500VPEAK 2MTC
Text: 1 •»$ .*/> G E N E R A I ELECTRIC Photon Coupled Isolator H11BX522 Ga As Solid State Lamp & NPN Silicon Photo-Darlington Amplifier The G eneral E lectric H 11B X 522 is a gallium arsenide, infrared em itting diode coupled w ith a silicon photo-d arlin g to n am plifier
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H11BX522
H11BX522
33mW/Â
2500VPEAK
2MTC
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1N9778
Abstract: 1N9628-1 1n9628 3195g 1N9920-1 1N9878 1N9818-1 3195gc 1n9620 1n9918
Text: H1L 4ML J> H SHfc-LS DOGQISS 003432^ 2S1! • M I L S r , | The documentation and process conversion > | measures necessary to comply with this [ f revision shall be completed by 15 June1994 [ 1- ■- 1 ,-,
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GQ34S2R
HXL-S-19500/117K
HIL-S-19500/117J
1H962B-1
1N992B-1,
1N962BUR-1
1N992BUR-1,
1N962C-1
1N992C-1,
1N962CUR-1
1N9778
1N9628-1
1n9628
3195g
1N9920-1
1N9878
1N9818-1
3195gc
1n9620
1n9918
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