ZLLS400
Abstract: ZHCS400 ZLLS400TA ZLLS400TC Schottky Diode 40V 1A
Text: ZLLS400 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.52A; IR = 10mA DESCRIPTION This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low
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ZLLS400
OD323
ZLLS400
ZHCS400
ZLLS400TA
ZLLS400TC
Schottky Diode 40V 1A
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RLTMDL_442_1-50MW
Abstract: No abstract text available
Text: RLTMDL-442 1-50 mW Blue Laser Diode Modul Blue diode laser module at 442nm is made features of ultra compact, long lifetime, low cost and easy operating, which is used in measurement, communication, spectrum analysis, etc. Specifications Wavelength Output Power
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RLTMDL-442
442nm
90-260VAC)
TEM00
1-30kHz,
SMA-905/FC
1-50mw
RLTMDL_442_1-50MW
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ZLLS400
Abstract: ZHCS400 ZLLS400TA ZLLS400TC FSM12
Text: ZLLS400 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.52A; IR = 10 A DESCRIPTION This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low
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ZLLS400
OD323
ZLLS400
ZHCS400
ZLLS400TA
ZLLS400TC
FSM12
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ZLLS400
Abstract: IR610 ZHCS400 ZLLS400TA ZLLS400TC
Text: ZLLS400 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.52A; IR = 10 A DESCRIPTION This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low
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ZLLS400
OD323
ZLLS400
IR610
ZHCS400
ZLLS400TA
ZLLS400TC
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4420 Transistor
Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.
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ZXTS1000E6
OT23-6
ZXTS1000E6TA
ZXTS1000E6TC
4420 Transistor
transistor b 622
pnp transistor d 640
Schottky Diode 40V 5A
ZXTS1000E6
ZXTS1000E6TA
ZXTS1000E6TC
0118 transistor
High voltage fast switching power transistor pnp
DSA003748
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Schottky Diode 40V 2A
Abstract: marking ma sot23-6 ZHCS2000 320 sot236 ZLLS1000TA ZLLS1000TC ZLLS2000 marking L10
Text: ZLLS2000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 2.2A; IR = 40 A DESCRIPTION This compact SOT23-6 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage
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ZLLS2000
OT23-6
Schottky Diode 40V 2A
marking ma sot23-6
ZHCS2000
320 sot236
ZLLS1000TA
ZLLS1000TC
ZLLS2000
marking L10
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ZLLS1000
Abstract: Diode 20A/30v ZHCS1000 ZLLS1000TA ZLLS1000TC
Text: ZLLS1000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 1.16A; IR = 20 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low
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ZLLS1000
ZLLS1000
Diode 20A/30v
ZHCS1000
ZLLS1000TA
ZLLS1000TC
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ZHCS2000
Abstract: ZLLS2000 ZLLS2000TA ZLLS2000TC LL-20 DIODE SCHOTTKY 40V 500MA marking ll20
Text: ZLLS2000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 2.2A; IR = 40 A DESCRIPTION This compact SOT23-6 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage
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ZLLS2000
OT23-6
ZHCS2000
ZLLS2000
ZLLS2000TA
ZLLS2000TC
LL-20
DIODE SCHOTTKY 40V 500MA
marking ll20
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L05 diode
Abstract: ZLLS500 MARKING L05 ZHCS500 ZLLS500TA ZLLS500TC
Text: ZLLS500 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.7A; IR = 10 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low
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ZLLS500
ZLLS500
L05 diode
MARKING L05
ZHCS500
ZLLS500TA
ZLLS500TC
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L05 diode
Abstract: ZLLS500 ZHCS500 ZLLS500TA ZLLS500TC 8-NP
Text: ZLLS500 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.7A; IR = 10 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low
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ZLLS500
ZLLS500
L05 diode
ZHCS500
ZLLS500TA
ZLLS500TC
8-NP
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4420 Transistor
Abstract: Schottky Diode 40V 5A Schottky diode Die IR ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC transistor MV sot23
Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.
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ZXTS1000E6
OT23-6
ZXTS1000E6TA
ZXTS1000E6TC
4420 Transistor
Schottky Diode 40V 5A
Schottky diode Die IR
ZXTS1000E6
ZXTS1000E6TA
ZXTS1000E6TC
transistor MV sot23
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ZHCS1000
Abstract: ZLLS1000 ZLLS1000TA ZLLS1000TC
Text: ZLLS1000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 1.16A; IR = 20 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low
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ZLLS1000
ZHCS1000
ZLLS1000
ZLLS1000TA
ZLLS1000TC
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Untitled
Abstract: No abstract text available
Text: L L 46 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guardring against excessive voltage, such as electrostatic discharges.
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DO-35
BAT46.
OD-80C)
100uA
300us,
250mA
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Untitled
Abstract: No abstract text available
Text: [ UTZ-SC0284_5 ] 2012/10/02 Blue Laser Diode NDB4116 Features Outline Dimension • Optical Output Power: CW 100mW • Can Type: 5.6 mm Floating Mounted with Photo Diode and Zener Diode Unit mm ( Item Symbol Optical Output Power Po Absolute
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UTZ-SC0284
NDB4116
100mW
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BAS19
Abstract: BAS19LT1 BAS20 BAS20LT1 BAS21 BAS21LT1 sot23 marking JR
Text: BAS19LT1, BAS20LT1, BAS21LT1 Preferred Devices High Voltage Switching Diode • Device Marking: BAS19LT1 = JP http://onsemi.com Device Marking: BAS20LT1 = JR Device Marking: BAS21LT1 = JS HIGH VOLTAGE SWITCHING DIODE 3 CATHODE MAXIMUM RATINGS Rating Symbol
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BAS19LT1,
BAS20LT1,
BAS21LT1
BAS19LT1
BAS20LT1
BAS19
BAS20
BAS21
r14525
BAS19
BAS19LT1
BAS20
BAS20LT1
BAS21
BAS21LT1
sot23 marking JR
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ZHCS2000
Abstract: Schottky Diode 40V 2A ZHCS2000TA ZHCS2000TC DSA003728
Text: ZHCS2000 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SUMMARY VR=40V; IC= 2A DESCRIPTION A surface mount Schottky Barrier Diode featuring low forward voltage drop suitable for high frequency rectification and reverse voltage protection. FEATURES SOT23-6
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ZHCS2000
OT23-6
ZHCS2000TA
ZHCS2000TC
ZHCS2000
Schottky Diode 40V 2A
ZHCS2000TA
ZHCS2000TC
DSA003728
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ZS20
Abstract: ZS20 SOT23 MARKING T2 MARKING SOT23-6 ZHCS2000 ZHCS2000TA ZHCS2000TC
Text: ZHCS2000 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SUMMARY VR=40V; IC= 2A DESCRIPTION A surface mount Schottky Barrier Diode featuring low forward voltage drop suitable for high frequency rectification and reverse voltage protection. FEATURES SOT23-6
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ZHCS2000
OT23-6
ZHCS2000TA
ZHCS2000TC
ZS20
ZS20 SOT23 MARKING
T2 MARKING SOT23-6
ZHCS2000
ZHCS2000TA
ZHCS2000TC
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T1 SOT23-6
Abstract: T2 MARKING SOT23-6 ZHCS2000 ZHCS2000TA ZHCS2000TC marking e1 diode
Text: ZHCS2000 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SUMMARY VR=40V; IC= 2A DESCRIPTION A surface mount Schottky Barrier Diode featuring low forward voltage drop suitable for high frequency rectification and reverse voltage protection. FEATURES SOT23-6
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ZHCS2000
OT23-6
ZHCS2000TA
ZHCS2000TC
T1 SOT23-6
T2 MARKING SOT23-6
ZHCS2000
ZHCS2000TA
ZHCS2000TC
marking e1 diode
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Untitled
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTPS720MC ZX3CD3S1M832 MPPS Miniature Package Power Solutions 40V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-40V; RSAT = 104m ; C = -3A
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ZXTPS720MC
ZX3CD3S1M832
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Untitled
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTPS718MC ZX3CD2S1M832 MPPS Miniature Package Power Solutions 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-20V; RSAT = 64m ; C = -3.5A
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ZXTPS718MC
ZX3CD2S1M832
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modulator circuit
Abstract: BY438 Philips diode tFR
Text: N AMER PHILIPS/ DISCR ETE bRE » • bbS3131 D0Eb471 2HT ■ APX BY438 A PARALLEL EFFICIENCY DIODE Double-diffused passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended for use as efficiency diode in transistorized horizontal deflection circuits of television receivers. The
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bbS3131
D0Eb471
BY438
OD-64.
BY438.
modulator circuit
BY438
Philips diode tFR
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbS3131 D0Eb471 £4^ « A P X bRE » A BY438 PARALLEL EFFICIENCY DIODE Double-diffused passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended fo r use as efficiency diode in transistorized horizontal deflection circuits o f television receivers. The
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bbS3131
D0Eb471
BY438
OD-64.
BY438.
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ALPs modulator
Abstract: BY438 diode BY438 JI75 TRANSISTOR D 819
Text: SbE ]> 7110ÖSL 0 040 45 1 SOfl • P H I N BY438 P H IL IP S INTERNATIONAL T-OI-is SbE D PARALLEL EFFICIENCY DIODE Double-diffused passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended fo r use as efficiency diode in transistorized horizontal deflection circuits o f television receivers. The
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BY438
OD-64.
BY438.
7Z77828
ALPs modulator
BY438
diode BY438
JI75
TRANSISTOR D 819
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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