RKS101KG
Abstract: xenon flash lamp "cpu" xenon Xenon Flash
Text: April 2010 Renesas Electronics High-speed & High-voltage Switching Diode RKS101K Best for high-speed switching and backflow prevention Features z High-speed switching z High voltage z Low capacitance z Small package Package Outline trr = 100ns max VRM = 420V
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RKS101K
100ns
400ctrical
100mA
RKS101KG
REJ01G0013-0200
RKS101KG
xenon flash lamp
"cpu" xenon
Xenon Flash
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Xenon Flash
Abstract: average voltage measurment
Text: High Speed & High Voltage Switching Diode RKS101K Best for high-speed switching and backflow prevention! July 2009 Features z High-speed switching z High voltage z Low capacitance z Small package Package Outline trr = 100ns max VRM = 420V 5pFmax[VR=0V,f=1MHz]
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RKS101K
100ns
100mA
RKS101KG
RKS101KG
REJ01G0013-0100
Xenon Flash
average voltage measurment
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MB1S
Abstract: O20C
Text: MCC TM Micro Commercial Components Features • • • • • Glass Passivated Diode Construction High Surge Overload Rating:35A Peak Saves Space On Printed Circuit Board High Temperature Soldering Guaranteed:260oC/10 Second UL Recognized File # E165989
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MB05S
MB10S
260oC/10
E165989
MIL-STD-750
J-STD-020C
MB10S
MB1S
O20C
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MB6S
Abstract: No abstract text available
Text: MCC Features • • • • • Glass Passivated Diode Construction High Surge Overload Rating:35A Peak Saves Space On Printed Circuit Board High Temperature Soldering Guaranteed:260oC/10 Second UL Recognized File # E165989 Mechanical Data • MB05S THRU
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MB05S
MB10S
260oC/10
E165989
MIL-STD-750
J-STD-020C
MB10S
MB6S
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MB10S
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components Features • • • • • Glass Passivated Diode Construction High Surge Overload Rating:35A peak Saves Space on Printed Circuit Board High Temperature Soldering Guaranteed: 260℃/10 Second UL Recognized File # E165989
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PDF
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MB05S
MB10S
E165989
MIL-STD-750,
J-STD-020C
MB10S
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components Features • • • • Glass Passivated Diode Construction High Surge Overload Rating:35A peak Saves Space on Printed Circuit Board High Temperature Soldering Guaranteed: 260℃/10 Second Maximum Ratings • MB05M THRU
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MB05M
MB10M
MIL-STD-750,
J-STD-020C
MB10M
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MB1S
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components Features • • • • • Glass Passivated Diode Construction High Surge Overload Rating:35A peak Saves Space on Printed Circuit Board High Temperature Soldering Guaranteed: 260℃/10 Second UL Recognized File # E165989
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PDF
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MB05S
MB10S
E165989
MIL-STD-750,
J-STD-020C
MB10S
MB1S
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Untitled
Abstract: No abstract text available
Text: MCC Micro Commercial Components Features • • • Glass Passivated Diode Construction High Temperature Soldering Guaranteed:260oC/10 Second Saves Space On Printed Circuit Board Mechanical Data • • • • Lead Free Finish/RoHS Compliant NOTE 1 ("P" Suffix
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MB05S
MB10S
260oC/10
MIL-STD-750
J-STD-020C
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MB10M
Abstract: 5A, 50V BRIDGE-RECTIFIER MB8M MB05M
Text: MB05M THRU Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • MB10M 0.5Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts Through Hole Package Glass Passivated Diode Construction
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MB05M
MB10M
50Vstantaneous
MB10M
5A, 50V BRIDGE-RECTIFIER
MB8M
MB05M
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mb6s diode
Abstract: Bridge Rectifier, 35A, 600V MB10S
Text: MCC Micro Commercial Components Features • • • Glass Passivated Diode Construction High Temperature Soldering Guaranteed:260oC/10 Second Saves Space On Printed Circuit Board Mechanical Data • • • • Lead Free Finish/RoHS Compliant NOTE 1 ("P" Suffix
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260oC/10
MIL-STD-750
J-STD-020C
MB05S
MB10S
mb6s diode
Bridge Rectifier, 35A, 600V
MB10S
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DB101
Abstract: Bridge Diode Rectifier DB107 DB107 DIODE db101 DB102 DB103 DB104 DB105 DB106
Text: DB101 THRU DB107 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • 1 Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts Through Hole Package Glass Passivated Diode Construction
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DB101
DB107
DB102
DB103
DB104
DB105
DB106
DB101
Bridge Diode Rectifier DB107
DB107
DIODE db101
DB102
DB103
DB104
DB105
DB106
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25A, 50V BRIDGE-RECTIFIER
Abstract: SDB101 SDB102 SDB103 SDB104 SDB105 SDB106 SDB107 DIODE bridge 255 Bridge Diode 1A 800V
Text: SDB101 THRU SDB107 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 Features • • • • 1 Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts Surface Mount Package Glass Passivated Diode Construction
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SDB101
SDB107
SDB102
SDB103
SDB104
SDB105
SDB106
25A, 50V BRIDGE-RECTIFIER
SDB101
SDB102
SDB103
SDB104
SDB105
SDB106
SDB107
DIODE bridge 255
Bridge Diode 1A 800V
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MB4S
Abstract: No abstract text available
Text: MCC Features • • • • • Glass Passivated Diode Construction High Surge Overload Rating:35A peak Saves Space on Printed Circuit Board High Temperature Soldering Guaranteed: 260℃/10 Second UL Recognized File # E165989 Maximum Ratings • MB05S THRU
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MB05S
MB10S
E165989
MIL-STD-750,
J-STD-020C
MB4S
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FAST RECOVERY DIODE 200ns
Abstract: fast recovery diode 1a trr 200ns fast recovery diode 2a trr 200ns TO3 package RthJC diode 15A FAST RECOVERY DIODE 200ns 2a NTE6200 NTE6202 NTE6206 NTE6208
Text: NTE6200 thru NTE6210 Positive Center Tapped Silicon Recitifers 30 Amp 15A per diode Features: D D D D Available in Standard (NTE6200 & NTE6202) and Fast (NTE6206 thru NTE6210) Recovery 250 Amps Peak One Half Cycle Surge Current Fast Recovery Types: trr = 200ns Max
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NTE6200
NTE6210
NTE6200
NTE6202)
NTE6206
NTE6210)
200ns
NTE6200,
NTE6206
NTE6202,
FAST RECOVERY DIODE 200ns
fast recovery diode 1a trr 200ns
fast recovery diode 2a trr 200ns
TO3 package RthJC
diode 15A
FAST RECOVERY DIODE 200ns 2a
NTE6202
NTE6208
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S70B(R)
Abstract: No abstract text available
Text: S 70B R T H RU S 70Y ( R) DACO SEMICONDUCTOR CO., LTD. STANDARD RECOVERY DIODE STUD TYPES Features 70A 70 Amp Rectifier 100-1600 Volts High Surge Capability Types Up to 1600V V RRM Maximum Ratings Operating Temperature: Storage Temperature: Part Number
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1N2128A(R)
Abstract: No abstract text available
Text: 1N2128A R T HRU 1N2138A(R) DACO SEMICONDUCTOR CO., LTD. Features STANDARD RECOVERY DIODE STUD TYPES 60A 60 Amp Rectifier 50-600 Volts High Surge Capability Types Up to 600V V RRM Maximum Ratings Operating Temperature: Storage Temperature: Part Number 1N2128A(R)
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1N2128A
1N2138A
1N2129A
1N2130A
1N2131A
1N2133A
1N2135A
1N2137A
1N2128A(R)
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1N3208(R)
Abstract: No abstract text available
Text: 1N3208 R T HR U 1N3214A(R) DACO SEMICONDUCTOR CO., LTD. STANDARD RECOVERY DIODE STUD TYPES Features 15A 15 Amp Rectifier 50-600 Volts High Surge Capability Types Up to 600V V RRM DO-5 Maximum Ratings Operating Temperature: Storage Temperature: Part Number
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1N3208
1N3214A
1N3209
1N3210
1N3211
1N3212
1N3213
1N3214
1N3208(R)
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Untitled
Abstract: No abstract text available
Text: S300BM R THRU S300YM(R) DACO SEMICONDUCTOR CO., LTD. Features STANDARD RECOVERY DIODE STUD TYPES 300A High Surge Capability Types Up to 1600V V RRM 300Amp Rectifier 100~1600 Volts Maximum Ratings DO-9(DO-205AB) Operating Temperature: -55 to Storage Temperature: -55
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S300BM
S300YM
300Amp
DO-205AB)
S300DM
S300EM
S300GM
S300JM
S300KM
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1N1183A(R)
Abstract: No abstract text available
Text: 1N1183A R T HR U 1N1190A(R) DACO SEMICONDUCTOR CO., LTD. Features STANDARD RECOVERY DIODE STUD TYPES 40A 40Amp Rectifier 50-600 Volts High Surge Capability Types Up to 600V V RRM Maximum Ratings Operating Temperature: Storage Temperature: Part Number 1N1183A(R)
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1N1183A
1N1190A
40Amp
1N1184A
1N1186A
1N1188A
1N1183A(R)
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components Features x x x x • Glass Passivated Diode Construction High Surge Overload Rating:35A peak Saves Space on Printed Circuit Board High Temperature Soldering Guaranteed: 260к/10 Second UL Recognized File # E165989 Mechanical Data
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Original
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MB05S
MB10S
E165989
MIL-STD-750,
J-STD-020C
MB10S
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RJ635
Abstract: No abstract text available
Text: TOSHIBA GaAs IRED & PHOTO-THYRISTOR TLP741J Office Machine Household Use Equipment Solid State Relay Switching Power Supply The Toshiba TLP741J consists of a photo-thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.
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TLP741J
150mA
UL1577,
E67349
BS415
BS7002
EN60950)
4000Vrms
TLP741J
VDE0884
RJ635
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65640
Abstract: No abstract text available
Text: GaAs IRED & PHOTO-THYRISTOR TLP741J Unit in mm OFFICE MACHINE. HOUSEHOLD USE EQUIPMENT. SOLID STATE RELAY. SWITCHING POWER SUPPLY. The TOSHIBA TLP741J consists of a photo-thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.
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PDF
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TLP741J
TLP741J
150mA
UL1577,
E67349
BS415
BS7002
EN60950)
4000Vrms
VDE0884/08
65640
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TLP647J
Abstract: No abstract text available
Text: GaAs IRED a PHOTO-THYRISTOR TLP647J TLP647J OFFICE MAC H IN E. HOUSEHOLD USE EQUIPMENT. SOLID STATE RELAY. SWITCHING POWER SUPPLY. The TOSHIBA TLP647J consists of a photo-thyristor optically coupled to a gallium arsenide infrared em itting diode in a six lead
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OCR Scan
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PDF
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TLP647J
TLP647J)
TLP647J
150mA
UL1577,
E67349
BS415
S7002
EN60950)
SS4330784,
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DIODE db101
Abstract: No abstract text available
Text: Micmsemi h Châtowortti, C A m 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 1 Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts Features Through Hole Package Glass Passivated Diode Construction Moisture Resistant Eipoxy Case
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OCR Scan
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PDF
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DB101
DB102
DB103
DB104
DB105
DB106
DB107
DIODE db101
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