Untitled
Abstract: No abstract text available
Text: RD0504T Ordering number : ENA1851A SANYO Semiconductors DATA SHEET RD0504T Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • VRRM=400V trr=17ns typ. (IF=0.5A, IR=1A) VF max=1.5V Halogen free compliance • • Specifications
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RD0504T
ENA1851A
7003etc.
A1851-7/7
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A1851
Abstract: sot428 Part marking
Text: RD0504T Ordering number : ENA1851 SANYO Semiconductors DATA SHEET RD0504T Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • VRRM=400V trr=17ns typ. (IF=0.5A, IR=1A) • • VF max=1.5V Halogen free compliance Specifications
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RD0504T
ENA1851
A1851-3/3
A1851
sot428 Part marking
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marking TP
Abstract: R0504
Text: RD0504T Ordering number : ENA1851A SANYO Semiconductors DATA SHEET RD0504T Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • VRRM=400V trr=17ns typ. (IF=0.5A, IR=1A) VF max=1.5V Halogen free compliance • • Specifications
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ENA1851A
RD0504T
RD0504T-H
RD0504T-TL-H
A1851-7/7
marking TP
R0504
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RD2004
Abstract: A1486 RD2004JN
Text: RD2004JN Ordering number : ENA1486 SANYO Semiconductors DATA SHEET RD2004JN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=400V . High reliability. Fast forward / reverse recovery time.
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RD2004JN
ENA1486
A1486-3/3
RD2004
A1486
RD2004JN
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RD1004
Abstract: a1615 RD1004LS-SB5 rd1004ls RD1004LS-SB
Text: RD1004LS-SB5 Ordering number : ENA1615 SANYO Semiconductors DATA SHEET RD1004LS-SB5 Diffused Junction Type Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=400V . High reliability. Easy to be mounted, good heat dissipation.
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RD1004LS-SB5
ENA1615
A1615-3/3
RD1004
a1615
RD1004LS-SB5
rd1004ls
RD1004LS-SB
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TSC5302D
Abstract: TSC5302DCH TSC5302DCP
Text: Preliminary TSC5302D High Voltage NPN Transistor with Diode Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = 400V BVCBO = 800V Ic = 2A VCE SAT , = 1.0V @ Ic / Ib = 1A / 0.2A Features Ordering Information Built-in free-wheeling diode makes efficient anti
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TSC5302D
TSC5302DCH
O-251
TSC5302DCP
O-252
O-251
TS5302D
TSC5302D
TSC5302DCH
TSC5302DCP
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TSC5304D
Abstract: power transistor Ic 4A NPN to - 251 TSC5304DCH TSC5304DCP TS530 NPN Transistor 10A 400V TSC5304 ic 565 pin diagram
Text: Preliminary TSC5304D High Voltage NPN Transistor with Diode Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = 400V BVCBO = 750V Ic = 4A VCE SAT , = 1.2V @ Ic / Ib = 4A / 1A Features Ordering Information Built-in free-wheeling diode makes efficient anti
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TSC5304D
TSC5304DCH
O-251
TSC5304DCP
O-252
oth022
O-251
TS5304D
TSC5304D
power transistor Ic 4A NPN to - 251
TSC5304DCH
TSC5304DCP
TS530
NPN Transistor 10A 400V
TSC5304
ic 565 pin diagram
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5210 diode
Abstract: NPN Silicon Power Transistor DPAK npn transistors 400V low power TSC5304D TSC5304DCH TSC5304DCP C5 MARKING TRANSISTOR L 0814 CW68
Text: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 2.5A / 0.5A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC5304D
O-251
O-252
5210 diode
NPN Silicon Power Transistor DPAK
npn transistors 400V low power
TSC5304D
TSC5304DCH
TSC5304DCP
C5 MARKING TRANSISTOR
L 0814
CW68
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RD2004
Abstract: RD2004JS-SB ENA1895 TC-00002483 A1895
Text: RD2004JS-SB Ordering number : ENA1895 SANYO Semiconductors DATA SHEET RD2004JS-SB Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • VF=1.5V max. IF=20A VRRM=400V trr=20ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C
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ENA1895
RD2004JS-SB
PW100s,
A1895-3/3
RD2004
RD2004JS-SB
ENA1895
TC-00002483
A1895
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN7034 DSH05 Diffused Type Silicon Diode DSH05 0.5A Power Rectifier Features • Facilitates automatic mounting and miniaturization in end products. Peak reverse voltage : VRM=400V. Average rectified current : IO=0.5A. unit : mm 1312 [DSH05]
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ENN7034
DSH05
DSH05]
15max
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DSH05
Abstract: No abstract text available
Text: Ordering number : ENN7034 DSH05 Diffused Type Silicon Diode DSH05 0.5A Power Rectifier Features • Facilitates automatic mounting and miniaturization in end products. Peak reverse voltage : VRM=400V. Average rectified current : IO=0.5A. unit : mm 1312 [DSH05]
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ENN7034
DSH05
DSH05]
15max
DSH05
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TSC5304EDCP
Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
Text: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC5304ED
O-251
O-252
TSC5304EDCP
TSC5304EDCH
O-252
75pcs
marking E11 DIODE
power transistor Ic 4A NPN to - 251
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TSC5304ED
Abstract: power transistor Ic 4A NPN to - 251 TSC5304EDCP transistor c10 TO-252 marking C10 marking C10
Text: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC 4A VCE(SAT) Features ● 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC5304ED
O-251
O-252
TSC5304ED
power transistor Ic 4A NPN to - 251
TSC5304EDCP
transistor c10
TO-252 marking C10
marking C10
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A1270
Abstract: transistor A1270 RD2004 A1270 transistor datasheet RD2004LN A-1270 a1270* transistor
Text: RD2004LN Ordering number : ENA1270A SANYO Semiconductors DATA SHEET RD2004LN Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=400V . High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation.
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RD2004LN
ENA1270A
A1270-3/3
A1270
transistor A1270
RD2004
A1270 transistor datasheet
RD2004LN
A-1270
a1270* transistor
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D 92 M 03 DIODE
Abstract: NPN Transistor 1A 400V TSC5301D "NPN Transistor"
Text: TSC5301D High Voltage NPN Transistor with Diode TO-92 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE SAT Features ● 1A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation
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TSC5301D
TSC5301DCT
D 92 M 03 DIODE
NPN Transistor 1A 400V
TSC5301D
"NPN Transistor"
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Untitled
Abstract: No abstract text available
Text: TSC5301D High Voltage NPN Transistor with Diode TO-92 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE SAT Features ● 1A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation
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TSC5301D
TSC5301DCT
TSC5301Drty
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TRANSISTOR L 043 A
Abstract: diode 400v 0.5a TSC5301D transistor case To 92 NPN Transistor 1A 400V
Text: TSC5301D High Voltage NPN Transistor with Diode TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 400V BVCBO 700V IC VCE SAT Features ● 1A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation
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TSC5301D
TSC5301DCT
TRANSISTOR L 043 A
diode 400v 0.5a
TSC5301D
transistor case To 92
NPN Transistor 1A 400V
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RD2004
Abstract: No abstract text available
Text: RD2004LS-SB5 Ordering number : ENA1612 SANYO Semiconductors DATA SHEET RD2004LS-SB5 Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=400V . High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation.
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RD2004LS-SB5
ENA1612
A1612-3/3
RD2004
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NPN Transistor 1A 400V
Abstract: e07 mARking NPN transistor NPN TO92 400V transistor case To 92 "NPN Transistor"
Text: TSC5301D High Voltage NPN Transistor with Diode TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 400V BVCBO 700V IC VCE SAT Features ● 1A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation
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TSC5301D
TSC5301DCT
NPN Transistor 1A 400V
e07 mARking
NPN transistor
NPN TO92 400V
transistor case To 92
"NPN Transistor"
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Untitled
Abstract: No abstract text available
Text: TSC5301D High Voltage NPN Transistor with Diode TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 400V BVCBO 700V IC VCE SAT Features 1A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation
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TSC5301D
TSC5301DCT
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PDF
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TSC5304D
Abstract: TSC5304DCH TSC5304DCP power transistor Ic 4A NPN to - 251
Text: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC5304D
O-251
O-252
TSC5304D
TSC5304DCH
TSC5304DCP
power transistor Ic 4A NPN to - 251
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S11V
Abstract: Schottky diode TO220 15A 1000V 5tuz47 diode diode schottky 1000V 2a lead 5TUZ47 DO-41SS 20GWJ2CZ47 rectifier 5A 1000V DIP 1R5DL41A 20L6P45
Text: 1 NEW PRODUCTS DIGEST High-Breakdown Voltage 400V, 600V , Hlgh-Efficlency Diode (HEP) For prim ary flywheel use (600V) and secodary rectification use (400V) in com pact, high-efficiency switching pow er supplies. 5GLZ47A : V rrm = 4 0 0 V , IF(av) = 5A, trr« 5 n s
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5GLZ47A
5JLZ47
1DL41A
1DL42A
1R5DL41A
3DL41A
DO-41S
DO-15L
S11V
Schottky diode TO220 15A 1000V
5tuz47 diode
diode schottky 1000V 2a lead
5TUZ47
DO-41SS
20GWJ2CZ47
rectifier 5A 1000V DIP
20L6P45
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Untitled
Abstract: No abstract text available
Text: RECTIFIER, 400V, 1.7A, 50ns January 7, 1998 IPFF4 T E L 8 0 5 -4 9 8 -2 1 11 FAX:805-498-3804 W E B : http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED SUPERFAST RECTIFIER DIODE QUICK REFERENCE DATA • • • • • > • • Ip • trr • Ir 400V
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Untitled
Abstract: No abstract text available
Text: IDIOTI i s t i RECTIFIER, 400V, 2.1 A, 50ns January 7, 1998 2IPFF4 TE L805-498-2111 FAX:805-498-3804 W E B :http://w w w .sem tech.com Q UICK REFERENCE DATA A XIA L LEADED HERMETICALLY SEALED SUPERFAST RECTIFIER DIODE 400V If = 2.1 A trr = 50nS Very low reverse recovery tim e
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L805-498-2111
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