RB053L-30
Abstract: No abstract text available
Text: Schottky barrier diode Silicon Epitaxial Planer RB063L-30 Limits Reverse voltage (repetitive peak) VRM 30V Reverse voltage (DC) VR IO* 30V IFSM 70A Average rectified forward current Forward current surge peak (60Hz: ) DIMENSION (UNIT:mm) CATHODE MARK 1.5±0.2
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RB063L-30
100mA
RB053L-30
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QS3L383
Abstract: No abstract text available
Text: QS3L383, QS3L2383 Q QUALITY SEMICONDUCTOR, INC. QuickSwitch Products High-Speed Low Power 10-Bit Bus Exchange Switches QS3L383 QS3L2383 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs
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QS3L383,
QS3L2383
10-Bit
QS3L383
QS3L2383
QS3L383
3L383,
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QS3L2384
Abstract: QS3L384 B9 fet datasheet
Text: QS3L384, QS3L2384 QuickSwitch Products High-Speed, Low Power CMOS 10-Bit Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS3L384 QS3L2384 1 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs
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QS3L384,
QS3L2384
10-Bit
QS3L384
QS3L384)
QS3L2384
QS3L384
B9 fet datasheet
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QS3L2384
Abstract: No abstract text available
Text: IDTQS3L2384 HIGH-SPEED LOW POWER CMOS 10-BIT BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS EXCHANGE SWITCH DESCRIPTION: FEATURES: Enhanced N channel FET with no inherent diode to Vcc Low propagation delay, zero ground bounce
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IDTQS3L2384
10-BIT
IDTQS3L2384
QS3L2384
SO24-2)
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QS3L2384
Abstract: SO24-2
Text: IDTQS3L2384 HIGH-SPEED LOW POWER CMOS 10-BIT BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS EXCHANGE SWITCH DESCRIPTION: FEATURES: − − − − − − Enhanced N channel FET with no inherent diode to Vcc
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IDTQS3L2384
10-BIT
QS3L2384
SO24-2)
SO24-8)
SO24-2
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Untitled
Abstract: No abstract text available
Text: 1.8mm RIGHT ANGLE LED INDICATORS Kingbright L-2060NA/3 Package Dimensions Features lTRI-LEVEL DESIGN. lDIFFERENT COLOR COMBINATION AVAILABLE. l BLACK CASE ENHANCES CONTRAST RATIO. l HIGH RELIABILITY LIFE MEASURED IN YEARS. Description The Green source color devices are made with Gallium
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L-2060NA/3
3-L2060NA-2
L-2060NA/3ID
L-2060NA/3GD
3-L2060NA-3
L-2060NA/3YD
L-2060NA/3SRD
3-L2060NA-4
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SKIIP 33 nec 125 t2
Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.
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734TL
UWEB-MODEM-34
HCS412/WM
TLV320AIC10IPFB
100MB
NEON250
GA-60XM7E
BLK32X40
BLK32X42
SKIIP 33 nec 125 t2
skiip 613 gb 123 ct
RBS 6302 ericsson
SKIIP 513 gb 173 ct
THERMISTOR ml TDK 150M
pioneer PAL 010a
Project Report of smoke alarm using IC 555 doc
SKiip 83 EC 125 T1
ericsson RBS 6000 series INSTALLATION MANUAL
Ericsson Installation guide for RBS 6302
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marking 3L2 diode
Abstract: DIODE 3L2 3L2 diode i0633
Text: Super Fast Recovery Diode Single Diode Wtm D3L20U OUTLINE 2 0 0 V 2 .5 A Feature • Low Noise • trr=35ns • Full Molded • m s 'ix • trr=35ns • y iæ - ju k Main Use • • • • • ÌM .0 A J M 3 • a f f l- F A Switching Regulator Fly Wheel
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D3L20U
marking 3L2 diode
DIODE 3L2
3L2 diode
i0633
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d3l20u
Abstract: No abstract text available
Text: □— m im K U type Super Fast Recovery Diode Single Diode O U T L IN E D IM E N S IO N S D3L20U 200V 2.5A • 5Ë»* R A TIN G S Absolute Maximum Ratings m s se# Symbol Item Y/" tm S to ra g e Tem perature - a r A .S l S J ± Maximum R everse V oltage
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D3L20U
3L20U
d3l20u
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1xys
Abstract: D-6840 D6840 VB035-08N04 VB024-08N04 VB035-04N04 VB010 VB015-10N04 VB035 VB024-04N04
Text: 4b E D • I X Y S Mbflb25b D00127S 1 «IXY CORP □IXYS PRELIMINARY TECHNICAL INFORMATION* Data Sheet No. 911014A November 1991 VB006 VB015 VB035 Single-Phase Diode Rectifier Bridge VB010 VB024 • C om pact Housing
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Mbflb25b
D00127S
11014A
VB006
VB015
VB035
---N02
VB015--
VB024--
VB010
1xys
D-6840
D6840
VB035-08N04
VB024-08N04
VB035-04N04
VB015-10N04
VB035
VB024-04N04
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QS3L384
Abstract: QS3L2384
Text: QuickSwitch Products qs3L384 High-Speed, Low Power qs3L2384 CMOS 10-Bit Bus Switches FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • bidirectional switches connect inputs to outputs • Zero propagation delay QS3L384 ;
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qs3L384
10-Bit
qs3L2384
QS3L384)
QS3L2384
24-pin
QS3L384
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QS3L384
Abstract: QS3L2384
Text: QuickSwitch Products & C T O U N C . High-Speed, Low Power CMOS 10-Bit Bus Switches FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5£2 bidirectional switches connect inputs to outputs • Zero propagation delay QS3L384 ;
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10-Bit
QS3L384
QS3L2384
MDSL-00036-05
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PS2533
Abstract: No abstract text available
Text: DATA SHEET NEC PHOTOCOUPLER PS2533-1 ,-2,-4, PS2533L-1 ,-2,-4 HIGH ISOLATION VOLTAGE HIGH COLLECTOR TO EMITTER VOLTAGE MULTI PHOTOCOUPLER SERIES -NEPOC Series DESCRIPTION The P S2533-1, -2, -4 and P S2533L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode
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PS2533-1
PS2533L-1
S2533-1,
S2533L-1,
PS2533-1,
VDE0884
PS2533
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PS20A
Abstract: No abstract text available
Text: GB Semiconductor, Inc Q u ic k S w itc h P ro d u c ts q s 3L383 High-Speed Low Power qs3L2383 11W * P«S E x c h a n g e Switches FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 5Q. bidirectional switches connect inputs
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3L383
qs3L2383
QS3L2383
QS3L383
PS20A
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S3L384Q
Abstract: S3L384 QS3L384 QS3L2384
Text: ÖUALITY SE MI CON DUCTOR INC bSE D QS3L384, Q • 74bb003 OQDlMlb «=137 QS3L2384 Q S 3L384 Q S 3L2384 High Speed, Low Power CMOS10-bit Bus Switches FEATURES/BENEFITS • 5£2 switches connect inputs to outputs • Direct bus connection when switches on • Zero propagation delay 3L384
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74bb003
QS3L384,
QS3L2384
CMOS10-bit
3L384
3L2384
3L384)
3L2384
24-pin
QS3L384
S3L384Q
S3L384
QS3L2384
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Untitled
Abstract: No abstract text available
Text: Û UAL IT Y SEMICONDUCTOR INC b5E I> QS3L383, Q • 74bt.fiQ3 O Q O m O b TSÔ IÛSI QS3L2383 High Speed Low Power Bus Exchange Switches Q S 3L383 Q S 3L2383 FEATURES/BENEFITS • • • • • 5i2 switches connect inputs to outputs Direct bus connection when switches on
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QS3L383,
QS3L2383
3L383
3L2383
3L383)
3L2383
24-pin
QS3L383
MDSL-00035-00
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Untitled
Abstract: No abstract text available
Text: Q u ic k S w itc h P ro d u c ts High-Speed, Low Power % .1« . q s 3L384 qs 3L2384 C » O S '» ’ I» ' ßus Switches FEATURES/BENEFITS DESCRIPTION • The QS3L384 and QS3L2384 provide a set of ten high-speed CMOS TTL-compatible bus switches. The low ON resistance of the QS3L384 allows inputs
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3L384
3L2384
QS3L384
QS3L2384
10-bit
MDSL-00036-04
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transistor 3l2
Abstract: No abstract text available
Text: fOMdZOT KD224503 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U S l D d fH n C jtO n Transistor Module 30 Amperes/600 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed tor use
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KD224503
Amperes/600
iMb21
transistor 3l2
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DIODE 3L2
Abstract: Complementary MOSFET Half Bridge
Text: e? National February 1996 Semiconductor' NPS8852H Complementary MOSFET Half Bridge Features General Description These Complementary M O SFE T half bridge devices are produced using National's proprietary, high cell density, D M O S technology. This very high density process is especially tailored to
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NPS8852H
b5D113Q
DIODE 3L2
Complementary MOSFET Half Bridge
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ior e78996
Abstract: IRFK3D450 e78996 india IRFK3F450
Text: Bulletin E27100 International Iiqr IRectifier IRFK3D450,IRFK3F450 Isolated Base Power HEX-pak Assem bly - Half Bridge Configuration • • • ■ High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment.
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E27100
IRFK3P450
IRFK3F450
E78996.
T0-240
ior e78996
IRFK3D450
e78996 india
IRFK3F450
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SMD marking code B21 diode
Abstract: SMD MARKING CODE b21 SMD diode W03 SMD W05 smd diode Coloured band marking code S 4.2B diode smd diode smd marking BBB SMD W05 77 DIODE smd marking Ak DT80
Text: rZ J £ SGS-THOM SON iM M i[L Œ « Q M (ê § T P U x x /S M T H D T x x TRISIL DISCRETE SOLUTION FOR ISDN PROTECTION FEATURES . UNDIRECTIONAL CROWBAR PROTECTION. • PEAK PULSE CURRENT : Ipp = 7 5 A , 1 0 /1 0 0 0 jis . ■ HOLDING CURRENT = 150mA. ■ BREAKDOWN VOLTAGE:
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10/1000us.
150mA.
TPU58/SMTH
TPU80/SMTH
TPU120/SMTH
DT120
CB472.
CB473.
DIL20
T0220AB
SMD marking code B21 diode
SMD MARKING CODE b21
SMD diode W03
SMD W05
smd diode Coloured band marking code
S 4.2B diode smd
diode smd marking BBB
SMD W05 77
DIODE smd marking Ak
DT80
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S3L38
Abstract: 2/3L384
Text: QS3L384, QS3L2384 Q S3L384 Q S3L2384 High Speed, Low Power CMOS10-bit Bus Switches Q FEATURES/BENEFITS • • • • • 5i2 switches connect inputs to outputs Direct bus connection when switches on Zero propagation delay 3L384 Undershoot Clamp diodes on all inputs
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QS3L384,
QS3L2384
S3L384
S3L2384
CMOS10-bit
3L384)
3L2384
24-pin
QS3L384
QS3L2384
S3L38
2/3L384
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QS3L384
Abstract: QS3L2384
Text: QS3L384, Q QS3L2384 QS3L384 QS3L2384 High Speed, Low Power CMOS10-bit Bus Switches FEATURES/BENEFITS * 5 ii switches connect inputs to outputs * Direct bus connection when switches on • Zero propagation delay 3L384 • Undershoot Clamp diodes on all inputs
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QS3L384,
QS3L2384
CMOS10-bit
QS3L384
3L384)
3L2384
24-pin
QS3L2384
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thyristor st 103
Abstract: MCR-SL-S-1/thyristor st 103
Text: J.5E D SEMIKRON INC I fll3W,?l GÜOm'iB O I -p a s ^ V drm Itrms maximum values for continuous operation tq 110 A (Tvj V rrm 125 C) V SKFT 40/08 DS 15 20 25 1000 - 40/08 DU 40/10 DT 40/10 DU 40/12 DT 40/12 DU - 20 25 20 25 25 1200 1400 130 A 130 A 110 A
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SKFT60
thyristor st 103
MCR-SL-S-1/thyristor st 103
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