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    DIODE 3GH Search Results

    DIODE 3GH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 3GH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BAR63-02L

    Abstract: No abstract text available
    Text: BAR63-02L Silicon PIN Diode Preliminary data PIN diode for high speed switching 2 of RF signals Very low forward resistance low insertion loss 1 Very low capacitance (high isolation)  small inductance  For frequencies up to 3GHz  Ultra small leadless package


    Original     		PDF BAR63-02L EHA07001 Aug-27-2001 100MHz EHD07139 EHD07138 EHD07171 BAR63-02L

    Untitled

    Abstract: No abstract text available
    Text: BAR 63-02L Silicon PIN Diode Preliminary data PIN diode for high speed switching 2 of RF signals Very low forward resistance low insertion loss 1 Very low capacitance (high isolation)  small inductance  For frequencies up to 3GHz  Ultra small leadless package


    Original     		PDF 63-02L EHA07001 Mar-05-2001 100MHz EHD07139 EHD07138

    BAR63-07F

    Abstract: P3S marking TSFP-4
    Text: BAR63-07F XYs Silicon PIN Diode Preliminary data 3 PIN diode for high speed switching of RF signals 2 4 1 Very low forward resistance low insertion loss Very low capacitance (high isolation) TSFP-4  small inductance  For frequencies up to 3GHz  Ultra small SMD package for dual diodes


    Original     		PDF BAR63-07F Mar-08-2002 BAR63-07F P3S marking TSFP-4

    HP 5082-3081

    Abstract: HSMP-3814 avago 5188 hsmp3814 HSMP-386x Series KYOCERA RESISTOR NETWORKS mcr10ezhj222 "Common rail" HSMP-38 sot-323 CR21
    Text: A Low-Cost Surface Mount PIN Diode π Attenuator Application Note 1048 Introduction Background Analog attenuators find wide application in RF and microwave networks. Realized as either GaAs MMICs or PIN diode networks, these circuits are used to set the power level of an RF signal from a voltage control. In


    Original     		PDF 5966-0449E HP 5082-3081 HSMP-3814 avago 5188 hsmp3814 HSMP-386x Series KYOCERA RESISTOR NETWORKS mcr10ezhj222 "Common rail" HSMP-38 sot-323 CR21

    PD-LD

    Abstract: No abstract text available
    Text: PD LD CWDM 1.3~1.6um Band Laser Diode Modules Inc. CWDM 1.3~1.6um Band Laser Diode Modules PD-LD Inc. offers a complete selection of CWDM DFB Lasers for the O+E+S+C+L+B regions. These units are available in ready-to-use, fiber-coupled packages, including FC, ST, and SC receptacles, as well


    Original     		PDF E2000 CWDM13 PD-LD

    LT5503

    Abstract: No abstract text available
    Text: LTC5509 300MHz to 3GHz RF Power Detector in SC70 Package FEATURES • ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Temperature Compensated Internal Schottky Diode RF Detector Wide Input Frequency Range: 300MHz to 3GHz Wide Input Power Range: –30dBm to 6dBm Buffered Detector Output


    Original     		PDF LTC5509 300MHz 30dBm LT5506 500MHz 40MHz LTC5507 100kHz LT5503

    BAR63-02W

    Abstract: BAR63-02L BAR63-02V
    Text: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)


    Original     		PDF BAR63. Q1011) BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W BAR63-02W BAR63-02L BAR63-02V

    DIODE RF DETECTOR

    Abstract: audio envelope detector diode schottky diode 2GHz to 3GHz LTC5509 71893 LTC5507 marking E5 amplifier rf detector RF Power detector S11 SCHOTTKY diode
    Text: LTC5509 300MHz to 3GHz RF Power Detector in SC70 Package U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Temperature Compensated Internal Schottky Diode RF Detector Wide Input Frequency Range: 300MHz to 3GHz Wide Input Power Range: –30dBm to 6dBm Buffered Detector Output


    Original     		PDF LTC5509 300MHz 30dBm LT5506 500MHz 40MHz LTC5507 100kHz DIODE RF DETECTOR audio envelope detector diode schottky diode 2GHz to 3GHz LTC5509 71893 LTC5507 marking E5 amplifier rf detector RF Power detector S11 SCHOTTKY diode

    BAR63-05

    Abstract: BAR63-02L BAR63-02V
    Text: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05


    Original     		PDF BAR63. BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W BAR63-07L4 BAR63-02L BAR63-02V

    BAR63-02W

    Abstract: BAR63-02L BAR63-02V
    Text: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05


    Original     		PDF BAR63. BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W BAR63-07L4 BAR63-02W BAR63-02L BAR63-02V

    BAR63-02V

    Abstract: No abstract text available
    Text: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05


    Original     		PDF BAR63. BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W BAR63-02L BAR63-02V

    marking G5s

    Abstract: BAR63-02L BAR63-02V
    Text: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05


    Original     		PDF BAR63. BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W BAR63-07L4 marking G5s BAR63-02L BAR63-02V

    BAR63-02W

    Abstract: BAR63-02L BAR63-02V
    Text: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05


    Original     		PDF BAR63. BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W BAR63-07L4 BAR63-02W BAR63-02L BAR63-02V

    BAR63-02V

    Abstract: No abstract text available
    Text: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)


    Original     		PDF BAR63. Q1011) BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-02L* BAR63-02V BAR63-02V

    BAR63-02L

    Abstract: BAR63-07L4 Pin diode G4S BAR63 BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06
    Text: BAR63. Silicon PIN Diodes  PIN diode for high speed switching of RF signals  Very low forward resistance low insertion loss  Very low capacitance (high isolation)  For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W


    Original     		PDF BAR63. BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W SCD80 OD323 OT323 BAR63-02L BAR63-07L4 Pin diode G4S BAR63 BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06

    Pin diode G4S

    Abstract: BAR63 BAR63-02L BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W
    Text: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101


    Original     		PDF BAR63. BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W BAR63-02L Pin diode G4S BAR63 BAR63-02L BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-06 BAR63-06W

    DIODE marking A2 SCD80

    Abstract: BAR63-02W BAR63-02L BAR63-02V BAR63
    Text: BAR63. Silicon PIN Diodes  PIN diode for high speed switching of RF signals  Very low forward resistance low insertion loss  Very low capacitance (high isolation)  For frequencies up to 3GHz BAR63-02. BAR63-03W 1 BAR63-04 BAR63-04W BAR63-04S BAR63-05


    Original     		PDF BAR63. BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-04S BAR63-05 BAR63-05W BAR63-06 BAR63-06W DIODE marking A2 SCD80 BAR63-02W BAR63-02L BAR63-02V BAR63

    Untitled

    Abstract: No abstract text available
    Text: BAR 64 . W 3 Silicon PIN Diode  High voltage current controlled RF resistor for RF attenuator and switches 2  Frequency range above 1MHz  Low resistance and short carrier lifetime 1  For frequencies up to 3GHz BAR 64-04W BAR 64-05W VSO05561 BAR 64-06W


    Original     		PDF 4-04W 4-05W VSO05561 4-06W EHA07181 EHA07187 EHA07179 OT-323

    Untitled

    Abstract: No abstract text available
    Text: BAR 64-02V Silicon PIN Diode 2  High voltage current controlled RF resistor for RF attenuator and switches  Frequency range above 1MHz 1  Low resistance and short carrier lifetime VES05991  Very low inductance  For frequencies up to 3GHz Extremely small plastic SMD package


    Original     		PDF 4-02V VES05991 SC-79 Feb-20-2001 900MHz 1800MHz

    Ea 1530 A

    Abstract: 1553 optical
    Text: HL1553-1.55 pm Laser Diode with EA Modulator Description The HL1553 is a 1.55 firn InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW ) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is suitable as


    OCR Scan     		PDF HL1553-------------1 HL1553 HL1553 48832Gbps 100ps Ea 1530 A 1553 optical

    Untitled

    Abstract: No abstract text available
    Text: Switches - PIN Diode These solid-state PIN Diode RF switches operate from 10 MHz to 1.5 GHz and can be used to control the RF signal path. The units are available in many package configurations with up to eight 8 throws. Control is obtained through TTL Logic.


    OCR Scan     		PDF TWM5000 TWD5001 TWD5015 TWD5002 TWD5004 TWD5003 D5005 DP-11 TWH7230 TWH5016

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 3BH41,3GH41,3JH41 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 3BH41, 3GH41, 3JH41 HIGH SPEED RECTIFIER APPLICATIONS FAST RECOVERY • A verage Forward Current : I f (AV) —3.0A • Repetitive Peak Reverse Voltage : V rrjv [ = 100—600V •


    OCR Scan     		PDF 3BH41 3GH41 3JH41 3BH41, 3GH41, 3BH41 3GH41

    toshiba diode 3gh

    Abstract: 3GH41 3JH41 diode 3gh 3BH41 D0-201AD toshiba month code MARK diode general semiconductor TOSHIBA RECTIFIER
    Text: TOSHIBA 3BH41#3GH41#3JH41 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 3BH41, 3GH41, 3JH41 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS FAST RECOVERY • Average Forward Current • Repetitive Peak Reverse Voltage • Reverse Recovery Time !F(AV) =3.0A


    OCR Scan     		PDF 3BH41 3GH41 3JH41 3BH41, 3GH41, 3GH41 D0-201AD toshiba diode 3gh 3JH41 diode 3gh D0-201AD toshiba month code MARK diode general semiconductor TOSHIBA RECTIFIER

    3GH41

    Abstract: toshiba diode 3gh TOSHIBA RECTIFIER 3JH41
    Text: TOSHIBA 3GH41,3JH41 TOSHIBA FAST RECOVERY DIODE M r • ■ ■ ■ SILICON DIFFUSED TYPE 3IH A1 g mm V ■ ■ ■ ■ Unit in mm HIGH SPEED RECTIFIER APPLICATIONS FAST RECOVERY • Average Forward Current • Repetitive Peak Reverse Voltage • Reverse Recovery Time


    OCR Scan     		PDF 3GH41 3JH41 3JH41 961001EAA2' toshiba diode 3gh TOSHIBA RECTIFIER