Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DD200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $32F5F 36%1F&3D132214DDDC 2313FF3613462332364C3
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DD200S33K2C
13265F
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GCDA15C-1
Abstract: GCDA15C-1-GS08
Text: GCDA15C-1 Vishay Semiconductors Low Capacitance Bidirectional ESD Protection Diode in SOT143 3D Top View Pinning-Schematic Features • 1-line ESD protection silicon diode • ESD Immunity ± 30 kV e3 acc. IEC 61000-4-2 • Very low capacitance < 2 pF • Bidirectional, Symmetrical clamping behaviour
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GCDA15C-1
OT143
2002/95/EC
2002/96/EC
GCDA15C-1-GS08
08-Apr-05
GCDA15C-1
GCDA15C-1-GS08
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GCDA15C
Abstract: No abstract text available
Text: GCDA15C-1 Vishay Semiconductors Low Capacitance Bidirectional ESD Protection Diode in SOT143 3D Top View Pinning-Schematic Features • 1-line ESD protection silicon diode • ESD Immunity ± 30 kV e3 acc. IEC 61000-4-2 • Very low capacitance < 2 pF • Bidirectional, Symmetrical clamping behaviour
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GCDA15C-1
OT143
2002/95/EC
2002/96/EC
GCDA15C-1
GCDA15C-1-GS08
OT143
D-74025
17-Mar-06
GCDA15C
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FE3A
Abstract: No abstract text available
Text: FE3A / 3B / 3C / 3D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability
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MIL-STD-750,
18-Jul-08
FE3A
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FE3A
Abstract: No abstract text available
Text: FE3A / 3B / 3C / 3D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability
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MIL-STD-750,
D-74025
11-Aug-04
FE3A
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FE3A
Abstract: TJ 3D
Text: FE3A / 3B / 3C / 3D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability
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MIL-STD-750,
08-Apr-05
FE3A
TJ 3D
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Untitled
Abstract: No abstract text available
Text: UF 5400.UF 5408 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter *0 Axial lead diode Ultrafast silicon rectifier diodes 8 9 1 9 9 -) 1
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Untitled
Abstract: No abstract text available
Text: UF 5400.UF 5408 *0 Axial lead diode Ultrafast silicon rectifier diodes 8 9 1 9 9 -) 1 9 9 ) 9 9 0 3 /" 3 /"' 3 /" 3 /"5 3 /"" 3 /"/ 3 /" 3 /". #88 # / ' 5 " / = #8- #
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Untitled
Abstract: No abstract text available
Text: UF 5400.UF 5408 *0 Axial lead diode Ultrafast silicon rectifier diodes 8 9 1 9 9 -) 1 9 9 ) 9 9 0 3 /" 3 /"' 3 /" 3 /"5 3 /"" 3 /"/ 3 /" 3 /". #88 # / ' 5 " / = #8- #
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PD4995A
Abstract: PAL/PD4995A
Text: IC INFORMATION Function Type System Control IC PD3410A Model 1/4 E DV-343 • Pin Function No. Mark Pin Name I/O Function 1 XCS3/XCASL XCS3 O PD4995A MY CHIP chip select signal output 2 GND GND − GND 3 CK HCPUCK O N.C. 4 VCC V+3D − V+3D 5 PICLK − I/O N.C.
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PD3410A
DV-343
PD4995A
36MVH
BU2158F
XCS10
XCS20
XCS22
XCS23
PD4995A
PAL/PD4995A
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5408 diode
Abstract: IN 5408 diode DIODE IN 5408 diode 5408 diode 5400 5408
Text: UF 5400.UF 5408 *0 Axial lead diode Ultrafast silicon rectifier diodes 8 9 1 9 9 -) 1 9 9 ) 9 9 0 3 /" 3 /"' 3 /" 3 /"5 3 /"" 3 /"/ 3 /" 3 /". #88 # / ' 5 " / = #8- #
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cms 12530
Abstract: MA320B MA320 4.7-16 pj 899 diode MA291 MA57 MA320G1-N
Text: PANASONIC INDL/ELEKiSEMI} 7EC D | t.'iBEflSM □□□ci?3D 3 | * 5 / U D ^ “f7 T — MA 57 MA57 T-b"? IS^ '>|J =] y i fcf^r "j ^ • ^ ■i'JK/'Si Epitaxial Planar -f i — K /B a n d Switching Diode
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13Efl5M
201j210
219j228Â
cms 12530
MA320B
MA320
4.7-16
pj 899 diode
MA291
MA57
MA320G1-N
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Untitled
Abstract: No abstract text available
Text: LM 63 LM63 +/-1C/+/-3C Accurate Remote Diode Digital Temperature Sensor withlntegrated Fan Control Texas In s t r u m e n t s Literature Number: SNAS190D t í December 2, 2010 LM 63 Sem iconductor 3 3D/33D A c cu ra te R em ote D iode Digital T e m p e ra tu re
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SNAS190D
3D/33D
125SC
2N3904,
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SE MI CO NDUCT OR INC 02 KS54AHCT f 7 A H 7 K KS74AHCT . I f l f l ' U D E I 7 ^ 4 1 4 2 000fc.04fi 3 | ' D " Hex/Quad D-type Flip-Flops with Clear FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with 54/74ALS logic family
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000fc
KS54AHCT
KS74AHCT
7Tb414S
14-Pin
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TI414
Abstract: No abstract text available
Text: J IU U U L B SAU SUN G S E M I C O N D U C T O R INC 05 Pe J 7 ^ m M E KS54AHCT KS74AHCT □ □ □ 5 clfc.3 fl 4-Bit Bistable Latches DESCRIPTION FEATURES » Function, pinout, speed and drive compatibility with 54/74ALS logic family • Low power consumption characteristic of CMOS
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KS54AHCT
KS74AHCT
54/74ALS
KS74AHCT:
KS54AHCT:
300-mil
7Tb414S
90-XO
14-Pin
TI414
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode OUTLINE S G 10T C 1 5 M Unit : mm Package I FTO-220G Weight J.54g Typ 150 V 10 A 4.5 Feature • Tj=i5(rc • • • • • • 7 J IÆ -J U K • e i R = i5 MA • j r iiìè s b c u c < u • « « M S 2kVßfiE Tj=150°C
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FTO-220G
J533-1
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54HC
Abstract: 74HC M54HC77 M74HC77
Text: H S -C M O S ./ INTEGRATED CIRCUITS P R E L IM IN A R Y D A T A 4-BIT D-TYPE LATCH DESCRIPTION The M 54/74H C77 is a high speed CM OS 4-8IT DTYPE LATCH fabricated in silicon gate C 2MOS technology. It has the same high speed perfor mance of LSTTL combined with true CM O S low
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M54/74HC77
54HC
74HC
M54HC77
M74HC77
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M74HC175
Abstract: No abstract text available
Text: S G S - T H O M S O M 54 H C 175 M 7 4 H C 175 N * 7Æ„ M«mi gïr[îMO(g§ QUAD D-TYPE FLIP-FLOP WITH CLEAR • HIGH SPEED tpD = 18 ns (TYP. at VCc = 5V ■ LOW POWER DISSIPATION lc c = 4 (iA (MAX.) at Ta = 25°C ■ HIGH NOISE IMMUNITY VNIH = VNIL = 28% VCC (MIN.)
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54/74LS175
M54/74HC175
54/74H
M74HC175
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74hctls
Abstract: No abstract text available
Text: Zvtrex ZXS4HCTLS ZX74HCTLS February 1985 534 Octal D-Type Flip-Flops with 3-State Outputs OBJECTIVE SPECIFICATIONS Features Description m Function, pin-out, speed and drive compatibility with 54/74LS logic family • Low power consumption characteristic of
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ZX74HCTLS
54/74LS
74HCTLS:
54HCTLS:
74hctls
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74HCTLS
Abstract: hctls574 HCTLS
Text: Zytrex ZX54HCTLS ZX74HCTLS February 1985 574 Octal D-Type Flip-Flops with 3-State Outputs OBJECTIVE SPECIFICATIONS Features Description • Function, pin-out, speed and drive compatibility with 54/74LS logic family ■ Low power consumption characteristic of
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ZX74HCTLS
54/74LS
74HCTLS:
54HCTLS:
74HCTLS
hctls574
HCTLS
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74HCTLS
Abstract: No abstract text available
Text: Z v t r e ZX54HCTLS ZX74HCTLS x £ 1 MT Octal D-Type Flip-Flops with 3-State Outputs February 1985 OBJECTIVE SPECIFICATIONS Features Description • Function, pin-out, speed and drive compatibility with 54/74LS logic family ■ Low power consumption characteristic of
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ZX54HCTLS
ZX74HCTLS
54/74LS
74HCTLS:
54HCTLS:
74HCTLS
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74hctls
Abstract: No abstract text available
Text: hfhex 374 ZX54HCTLS ZX74HCTLS February 1965 Octal D-Type Flip-Flops with 3-State Outputs OBJECTIVE SPECIFICATIONS Features Description • Function, pin-out, speed and drive compatibility with 54/74LS logic family ■ Low power consumption characteristic of
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ZX74HCTLS
54/74LS
74HCTLS:
54HCTLS:
74hctls
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2SJ174
Abstract: 2SJ220 ht 59 diode j359
Text: HITACHI 2SJ220 L ,2SJ220(S) S IL IC O N P - C H A N N E L M O S F E T HIGH SP EE D PO W ER SW ITC H IN G 4 • FEATU RES L?7 • Low On-Resistance • High Speed Switching • Low Drive Current • J* ! S3 * ft2 ! 12 ±Ö2 i Lc'8s =*i * ij J 2 54 ; Q.b r ii
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2SJ220
Ta-25Â
--10V
2SJ174
ht 59 diode
j359
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Untitled
Abstract: No abstract text available
Text: GD54/74HC174, GD54/74HCT174 HEX D-TYPE FLIP-FLOPS WITH COMMON CLOCK & CLEAR General Description These devices are identical in pinout to the 54/74L S 174. They contain six D-type flip-flops with common clock and clear inputs. Data on the D in puts having the specified setup and hold times are
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GD54/74HC174,
GD54/74HCT174
54/74L
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