DBA30
Abstract: DBA30B DBA30C DBA30E DBA30G silicon diode 3a DIODE 3A
Text: Ordering number:EN648D DBA30 Diffused Junction Silicon Diode 3A Single-Phase Bridge Rectifier Features Package Dimensions • Single-phase bridge rectifier applications. · Plastic molded type. · Peak reverse voltage : VRM=100 to 600V. · Average rectified current : IO=3A
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EN648D
DBA30
1088B
DBA30]
DBA30B
DBA30C
DBA30E
DBA30G
DBA30
DBA30E
DBA30G
silicon diode 3a
DIODE 3A
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Untitled
Abstract: No abstract text available
Text: STGD3NB60SD N-CHANNEL 3A - 600V - DPAK PowerMESH IGBT TYPE STGD3NB60SD • ■ ■ ■ ■ VCES VCE sat IC 600 V < 1.5 V 3A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY INTEGRATED WHEELING DIODE OFF LOSSES INCLUDE TAIL CURRENT
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STGD3NB60SD
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GD3NB60SD
Abstract: No abstract text available
Text: STGD3NB60SD N-CHANNEL 3A - 600V - DPAK PowerMESH IGBT TYPE STGD3NB60SD • ■ ■ ■ ■ VCES VCE sat IC 600 V < 1.5 V 3A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY INTEGRATED WHEELING DIODE OFF LOSSES INCLUDE TAIL CURRENT
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STGD3NB60SD
GD3NB60SD
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GD3NB60SD
Abstract: STGD3NB60SD STGD3NB60SDT4
Text: STGD3NB60SD N-CHANNEL 3A - 600V - DPAK PowerMESH IGBT TYPE STGD3NB60SD • ■ ■ ■ ■ VCES VCE sat IC 600 V < 1.5 V 3A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY INTEGRATED WHEELING DIODE OFF LOSSES INCLUDE TAIL CURRENT
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STGD3NB60SD
GD3NB60SD
STGD3NB60SD
STGD3NB60SDT4
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Untitled
Abstract: No abstract text available
Text: STGD3NB60SD N-CHANNEL 3A - 600V - DPAK PowerMESH IGBT TYPE STGD3NB60SD • ■ ■ ■ ■ VCES VCE sat IC 600 V < 1.5 V 3A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY INTEGRATED WHEELING DIODE OFF LOSSES INCLUDE TAIL CURRENT
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STGD3NB60SD
STGD3NB60SD-1
STGD3NB60SD
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GP-30DL
Abstract: 30DL
Text: ZOWIE Low VF Rectifier Diode GP30DLH THRU GP30MLH Low VF Rectifier Diode VF < 0.90V @IF = 3A FEATURES IFSM = 140Amp Halogen-free type GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead free product, compliance to RoHS
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GP30DLH
GP30MLH
140Amp
DO-201AD
DO-201AD
MIL-STD-750,
300uS
GP-30DL
30DL
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A306
Abstract: STTA306B STTA306B-TR US020 MOSFET 1200v 3a
Text: STTA306B TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 3A VRRM trr (typ) 600 V 20 ns VF (max) 1.65 V K FEATURES AND BENEFITS SPECIFICTO ”FREEWHEELMODE”OPERATIONS: FREEWHEEL OR BOOSTER DIODE ULTRA-FAST, AND SOFT RECOVERY
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STTA306B
A306
STTA306B
STTA306B-TR
US020
MOSFET 1200v 3a
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GP-30DL
Abstract: GP30DL GP30ML
Text: ZOWIE Low VF Rectifier Diode GP30DL THRU GP30ML Low VF Rectifier Diode VF < 0.90V @IF = 3A IFSM = 140Amp FEATURES GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead free product, compliance to RoHS Low forward voltage drop
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GP30DL
GP30ML
140Amp
DO-201AD
DO-201AD
MIL-STD-750,
300uS
GP-30DL
GP30ML
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Untitled
Abstract: No abstract text available
Text: ZOWIE Low VF Rectifier Diode GP30DLH THRU GP30MLH Low VF Rectifier Diode VF < 0.90V @IF = 3A FEATURES IFSM = 140Amp Halogen-free type GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Compliance to RoHS product Low forward voltage drop
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GP30DLH
GP30MLH
140Amp
DO-201AD
DO-201AD
MIL-STD-750,
300uS
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A306
Abstract: STTA306B STTA306B-TR ST A306
Text: STTA306B TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 3A VRRM 600 V trr (typ) 20 ns VF (max) 1.65 V K FEATURES AND BENEFITS SPECIFIC TO FREEWHEEL MODE OPERATIONS: FREEWHEEL OR BOOSTER DIODE. ULTRA-FAST, AND SOFT RECOVERY.
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STTA306B
A306
STTA306B
STTA306B-TR
ST A306
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400v 3a ultra fast recovery diode
Abstract: ST A306 TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE 400v 3a low vf diode A306 STTA306B STTA306B-TR
Text: STTA306B TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 3A VRRM 600 V trr (typ) 20 ns VF (max) 1.65 V K FEATURES AND BENEFITS SPECIFIC TO FREEWHEEL MODE OPERATIONS: FREEWHEEL OR BOOSTER DIODE. ULTRA-FAST, AND SOFT RECOVERY.
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STTA306B
400v 3a ultra fast recovery diode
ST A306
TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE
400v 3a low vf diode
A306
STTA306B
STTA306B-TR
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30PDA60
Abstract: No abstract text available
Text: s DIODE Type : 30PDA60 OUTLINE DRAWING 3A 600V Tj =150 °C FEATURES * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.24g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current
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30PDA60
30PDA60
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Untitled
Abstract: No abstract text available
Text: 3A Avg. 600Volts 31DF6 Fast Recovery Diode DSE-13050(1/2) 外形寸法図 構造:拡散型シリコンダイオード(FRD),リード線型 Dimension : mm OUTLINE DRAWING Package : Axial 6 Construction :Diffusion-type Silicon Diode,Axial Lead Type
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600Volts
31DF6
DSE-13050ï
UL94V-0
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Untitled
Abstract: No abstract text available
Text: s DIODE Type : 30PUB60 OUTLINE DRAWING 3A 600V 27ns FEATURES * Ultra-Fast Recovery * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.21g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current
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30PUB60
30PUB60
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Untitled
Abstract: No abstract text available
Text: s DIODE Type : 30PUA60 OUTLINE DRAWING 3A 600V 32ns FEATURES * Ultra-Fast Recovery * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.21g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current
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30PUA60
30PUA60
20x20x1t
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Untitled
Abstract: No abstract text available
Text: s DIODE Type : 30PUA60 OUTLINE DRAWING 3A 600V 32ns FEATURES * Ultra-Fast Recovery * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.21g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current
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30PUA60
30PUA60
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30PUB60
Abstract: No abstract text available
Text: s DIODE Type : 30PUB60 OUTLINE DRAWING 3A 600V 27ns FEATURES * Ultra-Fast Recovery * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.21g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current
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30PUB60
30PUB60
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Untitled
Abstract: No abstract text available
Text: s DIODE Type : 30PUA60 OUTLINE DRAWING 3A 600V 32ns FEATURES * Ultra-Fast Recovery * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.21g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current
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30PUA60
30PUA60
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30PUB60
Abstract: No abstract text available
Text: s DIODE Type : 30PUB60 OUTLINE DRAWING 3A 600V 27ns FEATURES * Ultra-Fast Recovery * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.21g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current
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30PUB60
30PUB60
20x20x1t
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diode smd marking 51
Abstract: smd diode marking Ja 3v6 marking code M3F60 SMD diode mark smd diode code ja diode smd marking BUF smd mark code DIODE 3A 600V smd diode marking 51
Text: 面実装デバイス 単体型 Rectifier Diode Surface Mounting Device Single Diode •外観図 OUTLINE M3F60 Unit : mm Weight : 0.072g (typ.) Package:M2F 600V 3A 品名略号 Type No. カソードマーク Cathode mark 特長 ① • 小型 SMD
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M3F60
1mst10msTj
J534-1
diode smd marking 51
smd diode marking Ja
3v6 marking code
M3F60
SMD diode mark
smd diode code ja
diode smd marking BUF
smd mark code
DIODE 3A 600V
smd diode marking 51
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Untitled
Abstract: No abstract text available
Text: 面実装デバイス 単体型 Rectifier Diode Surface Mounting Device Single Diode •外観図 OUTLINE M3F60 Unit : mm Weight : 0.072g (typ.) Package:M2F 600V 3A 品名略号 Type No. カソードマーク Cathode mark 特長 ① • 小型 SMD
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M3F60
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Untitled
Abstract: No abstract text available
Text: HWBBM’*-!'* Rectifier Diode $ $£! WSmftWX Surface Mounting Device Single Diode tfWfN-aH OUTLINE DIMENSIONS Unit : mm D3F60 A V -K ? -? 600V 3A I 43fi •Bstticfflnsflistt Cathode mark 7.0*03 L L _ CO _/_ Type No. O iS I fsm o ir s i n 2.5 P y H B - t( W
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OCR Scan
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D3F60
D3F60
50HzJPower
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fast recovery diode 20ns
Abstract: J533 SF3L60U
Text: Super Fast Recovery Diode Single Diode Wtm SF3L60U OUTLINE 600V 3A Feature • rüiitEEFRD • High Voltage Super FRD • Low Noise • trr= 20ns • • trr=20ns • Full Molded 71 [Æ -JU K • « 1 I Î E 2kV«|Œ • Dielectric Strength 2kV Main Use
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SF3L60U
fast recovery diode 20ns
J533
SF3L60U
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Untitled
Abstract: No abstract text available
Text: n - n x V'CX-Y- Super Fast Recovery Diode Single Diode OUTLINE DIMENSIONS SF3L60U 600V 3A • trr2 0 n s • 7 ,llÆ - ,lb K m m •SRSÎÜ RATINGS Absolute Maximum Ratings a a i 5 E-fSymbol C o n d itio n s Item Storage Temperature Operating Junction Temperature
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SF3L60U
50HziE5K
50HzjE
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