APT2x151DL60J
Abstract: H100
Text: APT2X151DL60J 600V 150A Ultrafast Soft Recovery Dual Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrafast Recovery Times trr • Low Losses • Free Wheeling Diode
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APT2X151DL60J
APT2x151DL60J
H100
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Untitled
Abstract: No abstract text available
Text: LPioduet*, Una. TELEPHONE 973 378-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA BAT 19 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications.
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-65to
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Untitled
Abstract: No abstract text available
Text: 1N 4150 Small-Signal Diode Fast Switching Rectifier Features Silicon Epitaxial Planar Diode For general purpose and switching This diode is also available in other case styles including the MiniMELF case with the type designation LL4150. Mechanical Data
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LL4150.
DO-35
200mA
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Untitled
Abstract: No abstract text available
Text: na. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 378-6960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. POWER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Collector diode voltage VCI! . -SO volts (Y*;it — —1-5 volts) Emitter diode voltage YK1!0 .,.;.-[0 volts
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Nichia laser
Abstract: nichia laser diode UTZ-SC0333 NDU4116
Text: [ UTZ-SC0333_2 ] 2013/02/13 Ultra Violet Laser Diode NDU4116 Features Outline Dimension • Optical Output Power: CW 70mW @Tc=25° °C • Peak Wavelength: 370~380nm • Can Type: φ 5.6 Floating Mounted with Photo Diode and Zener Diode Unit (mm) ( + .03
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UTZ-SC0333
NDU4116
380nm
Nichia laser
nichia laser diode
NDU4116
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Untitled
Abstract: No abstract text available
Text: [ UTZ-SC0333_3 ] 2013/10/16 Ultra Violet Laser Diode Features Outline Dimension • Optical Output Power: CW 70mW @Tc=25C • Peak Wavelength: 370~380nm • Can Type: 5.6 Floating Mounted with Photo Diode and Zener Diode Unit (mm)
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UTZ-SC0333
380nm
NDU4116
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Untitled
Abstract: No abstract text available
Text: [ UTZ-SC0333_3 ] 2013/10/16 Ultra Violet Laser Diode NDU4116 Features Outline Dimension • Optical Output Power: CW 70mW @Tc=25° °C • Peak Wavelength: 370~380nm • Can Type: φ 5.6 Floating Mounted with Photo Diode and Zener Diode Unit (mm) ( + .03
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UTZ-SC0333
NDU4116
380nm
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VUB135-22NO1
Abstract: vub135 E72873 135-22NO1
Text: VUB 135-22NO1 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recovery Diode IGBT VRRM = 2200 V VCES = 1800 V VCES = 1700 V IDAVM100 = 150 A IC80 = 80 A IFSM45 = 1000 A VF125 = 3.11 V VCE125 = 3.0 V =
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135-22NO1
IDAVM100=
IFSM45
VF125
VCE125
VUB135-22NO1
E72873
VUB135-22NO1
vub135
E72873
135-22NO1
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DSA300I200NA
Abstract: SOT227B IXYS DSA 300 SOT227B package DSA300I100NA DSA300I45NA DSa300i DSA300 Minibloc m4x8 din 934
Text: DSA 300 I 100 NA tentative V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 100 V 300 A 0.79 V Part number DSA 300 I 100 NA 2 1 3 4 Backside: Isolated Features / Advantages: Applications: Package:
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OT-227B
60747and
20091002a
DSA300I200NA
SOT227B
IXYS DSA 300
SOT227B package
DSA300I100NA
DSA300I45NA
DSa300i
DSA300
Minibloc m4x8
din 934
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Untitled
Abstract: No abstract text available
Text: VUB 135-22NO1 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System VRRM Fast Recovery Diode = 2200 V VCES IGBT = 800 V VCES = 700 V IDAVM00 = 50 A IC80 = = 80 A IFSM45 = 000 A VF25 = 3. V VCE25 = 3.0 V
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135-22NO1
IDAVM100
IFSM45
VF125
VCE125
VUB135-22NO1
E72873
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D690S
Abstract: 421e01
Text: S Datenblatt / Data sheet D690S Schnelle Diode Fast Diode Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Kenndaten Periodische Spitzensperrspannung repetitive peak reverse voltages Elektrische Eigenschaften
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D690S
D690S
421e01
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BAS19
Abstract: BAS19LT1 BAS20 BAS20LT1 BAS21 BAS21LT1 sot23 marking JR
Text: BAS19LT1, BAS20LT1, BAS21LT1 Preferred Devices High Voltage Switching Diode • Device Marking: BAS19LT1 = JP http://onsemi.com Device Marking: BAS20LT1 = JR Device Marking: BAS21LT1 = JS HIGH VOLTAGE SWITCHING DIODE 3 CATHODE MAXIMUM RATINGS Rating Symbol
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BAS19LT1,
BAS20LT1,
BAS21LT1
BAS19LT1
BAS20LT1
BAS19
BAS20
BAS21
r14525
BAS19
BAS19LT1
BAS20
BAS20LT1
BAS21
BAS21LT1
sot23 marking JR
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APT2X101DL40J
Abstract: H100
Text: APT2X101DL40J 400V 100A Ultrafast Soft Recovery Dual Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrafast Recovery Times trr • Low Losses • Soft Recoverery Characteristics
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APT2X101DL40J
Low25
APT2X101DL40J
H100
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Untitled
Abstract: No abstract text available
Text: APT2X101DL40J 400V 100A Ultrafast Soft Recovery Dual Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrafast Recovery Times trr • Low Losses • Soft Recoverery Characteristics
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APT2X101DL40J
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Untitled
Abstract: No abstract text available
Text: APT2X101DL40J 400V 100A Ultrafast Soft Recovery Dual Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrafast Recovery Times trr • Low Losses • Soft Recoverery Characteristics
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APT2X101DL40J
APT2X101DL40J
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Untitled
Abstract: No abstract text available
Text: APT2X101DL40J 400V 100A Ultrafast Soft Recovery Dual Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrafast Recovery Times trr • Low Losses • Soft Recoverery Characteristics
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APT2X101DL40J
APT2X101DL40J
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Untitled
Abstract: No abstract text available
Text: 19-3476; Rev 2; 9/06 7-Channel Precision Remote-Diode, Thermistor, and Local Temperature Monitor Features The MAX6698 precision multichannel temperature sensor monitors its own temperature, the temperatures of three external diode-connected transistors, and the
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MAX6698
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pin configuration of IC 74138
Abstract: pin out diagram of 74138 ic
Text: 19-3476; Rev 2; 9/06 7-Channel Precision Remote-Diode, Thermistor, and Local Temperature Monitor Features The MAX6698 precision multichannel temperature sensor monitors its own temperature, the temperatures of three external diode-connected transistors, and the
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MAX6698
MAX6698UE38-T
MAX6698UE99
21-0066I
U16-1*
MAX6698UE99-T
MAX6698UE9C
MAX6698UE9C
pin configuration of IC 74138
pin out diagram of 74138 ic
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74138 ic diagram
Abstract: 103a1
Text: 19-3476; Rev 1; 4/06 7-Channel Precision Remote-Diode, Thermistor, and Local Temperature Monitor Features The MAX6698 precision multichannel temperature sensor monitors its own temperature, the temperatures of three external diode-connected transistors, and the
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MAX6698
74138 ic diagram
103a1
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lg diode
Abstract: Z188 LR Z185-CO diode 006 LG
Text: SIEMENS LG/LR/LY Z181 2 toS DIODE ARRAYS LG ZI 82-186 8,10 DIODE ARRAYS LG Z188, 180 2 to 10 DIODE ARRAYS LR Z182“ 189/180 SINGLE 2 mm LED Lamp Dimensions in inches mm •094 ( 2 .4 ) , .063(2.1) .112(2.84) .068(2.24) .378 (9.6) 330(04) r\ o m .J.100 xa.S4)
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Z181-CO
Z182-CO
LG/LRZ183-CO
Z184-CO
Z185-CO
Z186-CO
Z187-CO
Z188-CO
Z189-CO
Z180-CO
lg diode
Z188
LR Z185-CO
diode 006 LG
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BB417
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'ìE D • ^53*131 DD2b414 5Û3 I IAPX BB417 J l VARIABLE CAPACITANCE DIODE The BB417 is a silicon variable capacitance diode in a hermetically sealed glass DO-34 envelope. The diode is primarily intended for automatic frequency control in television receivers.
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D02b414
BB417
BB417
DO-34
OD-68
DO-34)
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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SE308T
Abstract: No abstract text available
Text: DATA SHEET NEC LIGHT EMITTING DIODE ELECTRON DEVICE SE308-T GaAs INFRARED EMITTING DIODE -N E P O C SERIES— D ESCRIPTIO N The SE308 is a GaAs Gallium Arsenide Infrared Emitting Diode which is mounted on the lud frames and molded in plastic. On forward bias, it emits a spectrally narrow band of radiation peaking at 940 nm.
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SE308-T
SE308
PH108.
J22686
SE308T
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TUNNEL DIODE
Abstract: detectors Mixers "tunnel diode" Sampling Phase Detectors DIODE 394
Text: M ixers and D etectors Contents PAGE Mixers Double Balanced Mixers Open Substrate Mixers Image Rejection Mixers Single Sideband Modulators Detectors Tunnel Diode Detectors Limiter Tunnel Diode Detectors Biased Schottky Detectors Biased Schottky Limiter Detectors
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