10ghz optical modulator driver
Abstract: FTM1141GF-C nrz optical modulator 10Gb/s laser driver stm-64 dfb TEC Driver STM-64 10 gb laser diode Integrated Modulator and Driver Module
Text: Driver Integrated 10Gb/s MI-DFB LD Module FTM1141GF-C FEATURES • Driver integrated 10Gb/s MI-DFB module for 1600ps/nm optical transmission • MI-DFB-LD Modulator Integrated DFB Laser Diode is installed • Modulator driver IC is installed • Built-in optical isolator, PIN-Photo diode for monitor, thermistor
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10Gb/s
FTM1141GF-C
10Gb/s
1600ps/nm
FTM1141GF-C
als4888
10ghz optical modulator driver
nrz optical modulator
10Gb/s laser driver
stm-64 dfb
TEC Driver
STM-64
10 gb laser diode
Integrated Modulator and Driver Module
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photodiode 10Ghz PIN
Abstract: FLD5F20NP-C 10 gb laser diode
Text: 1,550nm Modulator Integrated DFB Laser FLD5F20NP-C FEATURES • Modulator Integrated DFB Laser Diode Module • CW operation of DFB laser section • Modulation voltage applied only to modulator section • High speed butterfly package with GPO connection
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550nm
FLD5F20NP-C
10Gb/s.
wave4888
photodiode 10Ghz PIN
FLD5F20NP-C
10 gb laser diode
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Untitled
Abstract: No abstract text available
Text: 1,550nm Modulator Integrated DFB Laser FLD5F20NP-G FEATURES • Modulator Integrated DFB Laser Diode Module • CW operation of DFB laser section • Modulation voltage applied only to modulator section • High speed butterfly package with GPO connection
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550nm
FLD5F20NP-G
10Gb/s.
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10 gb laser photodiode
Abstract: Fujitsu laser FLD5F10NP-B 10 gb laser diode
Text: 1,550nm MQW-DFB Modulator Integrated Laser FLD5F10NP-B FEATURES • Modulator Integrated DFB Laser Diode Module • CW operation of DFB laser section • Modulation voltage applied only to modulator section • High speed butterfly package with SMP connection
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550nm
FLD5F10NP-B
10Gb/s.
FCSI0602M200
10 gb laser photodiode
Fujitsu laser
FLD5F10NP-B
10 gb laser diode
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Untitled
Abstract: No abstract text available
Text: New products FLD5F20NP-C A Modulator integrated with DFB Laser Diode Module for 10G bit/s, 80km Optical Transmission FLD5F20NP-C The FLD5F20NP-C is a compact 8mm-thick , high-performance module that monolithically integrates a DFB laser with an electroabsorption
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FLD5F20NP-C
FLD5F20NP-C
PRBS223â
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DFB wavelength locker
Abstract: eudyna laser diode FLD5F20CE-E9535 FLD5F20CE-E9425 etalon wavelength locker 55nm E9425 e9530 Hauser+hrc+001 FLD5F20CE-E9195
Text: 1,550nm MI DFB Laser with Integrated Wavelength Locker FLD5F20CE-E FEATURES • • • • • 10Gb/s Modulator Integrated DFB Laser Diode Module Wavelength: ITU-T grid W9180 1563.05nm thru W9600 (1529.55nm) 1600 ps/nm Dispersion Compact package with GPO connector
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550nm
FLD5F20CE-E
10Gb/s
W9180
W9600
10Gb/s.
the4888
DFB wavelength locker
eudyna laser diode
FLD5F20CE-E9535
FLD5F20CE-E9425
etalon wavelength locker
55nm
E9425
e9530
Hauser+hrc+001
FLD5F20CE-E9195
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din en 175 301-803-A
Abstract: GDML 2016 led 24 GDML 2016 din en 175 301-803-A VDE 301-803-A GSE 2000-2 933 376-100 120 varistor DIN VDE 0281-5 GDM 3011 BLACK
Text: Rectangular Connectors 118 Product description Description cable socket with molded-onlead and central screw M 3, protective earth PE allows 0° and 180° assembly cable socket with molded-onlead, function indicator (LED) with protective circuit (diode), protective earth (PE) allows 0° and
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MIC4452
Abstract: No abstract text available
Text: APT23H50B APT23H50S 500V, 23A, 0.26Ω Max, trr ≤170ns N-Channel Ultrafast Recovery FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for
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APT23H50B
APT23H50S
170ns
MIC4452
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APT24F50B
Abstract: APT24F50S MIC4452
Text: APT24F50B APT24F50S 500V, 24A, 0.24Ω Max, trr ≤210ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT24F50B
APT24F50S
210ns
APT24F50B
APT24F50S
MIC4452
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zvs flyback driver
Abstract: APT24F50B APT24F50S MIC4452
Text: APT24F50B APT24F50S 500V, 24A, 0.24Ω Max, trr ≤210ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT24F50B
APT24F50S
210ns
zvs flyback driver
APT24F50B
APT24F50S
MIC4452
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APT24F50B
Abstract: APT24F50S MIC4452
Text: APT24F50B APT24F50S 500V, 24A, 0.24Ω Max, trr ≤210ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT24F50B
APT24F50S
210ns
APT24F50B
APT24F50S
MIC4452
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APT24F50B
Abstract: No abstract text available
Text: APT24F50B APT24F50S 500V, 24A, 0.24Ω Max, trr ≤210ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT24F50B
APT24F50S
210ns
APT24F50B
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Untitled
Abstract: No abstract text available
Text: APT24F50B APT24F50S 500V, 24A, 0.24Ω Max, trr ≤210ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT24F50B
APT24F50S
210ns
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Untitled
Abstract: No abstract text available
Text: APT24F50B APT24F50S 500V, 24A, 0.24Ω Max, trr ≤210ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT24F50B
APT24F50S
210ns
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Peltier element
Abstract: 77G DIODE "Peltier element" Electroabsorption modulator Peltier module electroabsorption modulator laser diode FLD5F10NP intensity modulator TR-NWT-468
Text: 1 : 352'8&76 /')13 Modulator Integrated DFBLaser Diode Module for 10 Gbit/s Optical Transmission: FLD5F10NP
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FLD5F10NP
Peltier element
77G DIODE
"Peltier element"
Electroabsorption modulator
Peltier module
electroabsorption modulator laser diode
FLD5F10NP
intensity modulator
TR-NWT-468
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Untitled
Abstract: No abstract text available
Text: GDM-Serie DIN EN 175 301-803-A / ISO 4400 Leitungsdose mit Elektronikeinsatz Cable socket with inserts prise secteur avec vis Platine Zulassung Approval Homologation Typ Type Type Bestell-Nr. Order no. No. réf. Farbe colour couleur Gehäuse casing boîtier
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01-803-A
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ph 4148 zener diode
Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS
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DN-40
74ABT126
74ABT2240
X3G-BZX84-C7V5
X3G-BZX84-C9V1
ph 4148 zener diode
philips zener diode ph 4148
pcf0700p
Zener Diode ph 4148
PCA1318P
ck2605
pcf0700p/051
philips Pca1318p
on4673
Zener Diode 4148
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DIN 43650
Abstract: DIN 933 272612 257612 249-111 GML 209 NJ GB1 280 490-440 HIRSCHMANN DIN 43650-A GML 209 NJ HIRSCHMANN DIN 43650 a type molded
Text: Industrial standard/DIN 43650-B/ISO 6952 GM/GMN Series Cable socket, self-assembly Variations • contact arrangement according to DIN 43650-B/ISO 6925 contact distance 10 mm • contact arrangement according to industrial standard (contact distance 11 mm)
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43650-B/ISO
DIN 43650
DIN 933
272612
257612
249-111
GML 209 NJ GB1
280 490-440
HIRSCHMANN DIN 43650-A
GML 209 NJ
HIRSCHMANN DIN 43650 a type molded
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MOC7811
Abstract: IC MOC7811 Motorola MOC7811 MOC7811 case 354 a moc7811 case 354 infrared emitters and detectors MOC7812 MOC7821 MOC7811 pin MOC7813
Text: OPTOELECTRONICS — continued Slotted Couplers/Interrupter Modules Slotted couplers consist of an infrared emitting diode facing a photodetector in a molded plastic housing. A slot in the housing between the emitter and the detector provides a means of in
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MFOE200
MFOE12QO,
MFOE1201
MFQE1202
MFOE71
MFOE1200
MFOE12Q2
10A-01
MOC7811
IC MOC7811
Motorola MOC7811
MOC7811 case 354 a
moc7811 case 354
infrared emitters and detectors
MOC7812
MOC7821
MOC7811 pin
MOC7813
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Fujitsu FLD5F6CX
Abstract: FLD5F6CX FLD3F6CX FLD5F*cx FLD5F6 M/5Bp tec fld3f
Text: FLD3F6CX FLD5F6CX InGaAsP/InP Laser Diode FEATURES • • • • • • • • Direct Modulated MQW DFB Laser Built-in TEC, Thermistor and Monitor PD 14-Pin Butterfly Type Module 2.5 Gb/s Transmission Spans Low Residual Chirp Available in Both Windows
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14-Pin
1300nm
1500nm
Fujitsu FLD5F6CX
FLD5F6CX
FLD3F6CX
FLD5F*cx
FLD5F6
M/5Bp tec
fld3f
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FLD150F5CN
Abstract: Integrated Modulator and Driver Module PRBS 223-1 laser diode 6 GHz
Text: FLD150F5CN Modulator Integrated MI DFB Laser FEATURES • • • • • • • Long transmission span over 120 km for 2.5 Gb/s system Modulator Integrated DFB Laser Diode Module CW laser operation and modulation voltage applied on modulator 1550 peak wavelength region and very low wavelength chirping
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FLD150F5CN
48832Gb/s
-28dBm
20psec
FLD150F5CN
Integrated Modulator and Driver Module
PRBS 223-1
laser diode 6 GHz
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Untitled
Abstract: No abstract text available
Text: TO G M N L 209 NJ LED 230 YE transparent transp. transp. 933 715-100 933 715-106_ 50 S tück each p ièce s <<+> <+) o - 1 H o- 2+ _ DIN 43 650-B Funktionsanzeige LED) mit Freilaufdiode Function indicator (LED) with freew heeling diode
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650-B
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220-14N1
Abstract: 172-16N1 220-12n1 220-08N1 220-16n1 250-08N1 172-08N1 MDD 172-08N1 TO-240AA 4404n
Text: Diode Modules •f lFAV = 36-305 A Type *F * v S E 72 873 (M) ► New !► MOD 26-18N1B * MDD 28-16N1B 1800 1600 1400 MD026-12N1B MDD 26-08N1B 1200 ► MDD 44-18N1B* MDD 44-16N1B • MDD 44-14N1B *iwc 36 100 60 650 Ru>cie par chip per chip 4S*C 10 RIS
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26-18N1B
28-16N1B
26-14N1B
O-240
MD026-12N1B
26-08N1B
26-06N1B
26-04N1B
44-18N1B*
44-16N1B
220-14N1
172-16N1
220-12n1
220-08N1
220-16n1
250-08N1
172-08N1
MDD 172-08N1
TO-240AA
4404n
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Herrmann
Abstract: diodes herrmann type of diode S1200 DD0D131
Text: HERRMANN "P- Ö l- û i KG 4 J> m S E 4 4 3 b e ? 5 1 2 b T h h r u n Schraubdioden Stud-base diodes Diodes à embases filetées HD 10/04-2 V V 400 800 12 1200 14 1400 16 1600 1200 ^1200 14 1400 =1550 16 1600 ^1750 11/04-2 400 08 800 12 1200 14 1400 16 1600
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443be
000012b
443L27S
000013H
Herrmann
diodes herrmann
type of diode
S1200
DD0D131
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