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    DIODE 349A Search Results

    DIODE 349A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 349A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode 349A

    Abstract: S1 DIODE schottky S11 SCHOTTKY diode MMBD110T1 MMDL101T1 mmbd110
    Text: Schottky Barrier Diode Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. MMDL101T1 1.0 pF SCHOTTKY BARRIER DIODE • Very Low Capacitance — Less than 1.0 pF @ Zero Volts


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    PDF MMDL101T1 diode 349A S1 DIODE schottky S11 SCHOTTKY diode MMBD110T1 MMDL101T1 mmbd110

    diode 349A

    Abstract: S11 SCHOTTKY diode MMBD110T1 MMDL101T1 S1 DIODE schottky
    Text: LESHAN RADIO COMPANY, LTD. Schottky Barrier Diode Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. MMDL101T1 1.0 pF SCHOTTKY


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    PDF MMDL101T1 diode 349A S11 SCHOTTKY diode MMBD110T1 MMDL101T1 S1 DIODE schottky

    Untitled

    Abstract: No abstract text available
    Text: MMDL101T1G Schottky Barrier Diode Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Features • Very Low Capacitance − Less than 1.0 pF @ 0 V


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    PDF MMDL101T1G MMDL101T1/D

    MMBD110T1

    Abstract: MMDL101T1G noise diode 5M MARKING CODE SCHOTTKY DIODE
    Text: MMDL101T1G Schottky Barrier Diode Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Features • Very Low Capacitance − Less than 1.0 pF @ 0 V


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    PDF MMDL101T1G MMDL101T1/D MMBD110T1 MMDL101T1G noise diode 5M MARKING CODE SCHOTTKY DIODE

    MMBD110T1

    Abstract: MMDL101T1
    Text: MMDL101T1 Schottky Barrier Diode Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Very Low Capacitance — Less than 1.0 pF @ Zero Volts


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    PDF MMDL101T1 r14525 MMDL101T1/D MMBD110T1 MMDL101T1

    MMBD110T1

    Abstract: MMDL101T1
    Text: MMDL101T1 Schottky Barrier Diode Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Very Low Capacitance — Less than 1.0 pF @ Zero Volts


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    PDF MMDL101T1 r14153 MMDL101T1/D MMBD110T1 MMDL101T1

    diode 349A

    Abstract: mmbd110 20 GHz schottky diode
    Text: MMDL101T1 Schottky Barrier Diode Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Very Low Capacitance — Less than 1.0 pF @ Zero Volts


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    PDF MMDL101T1 OD-323 diode 349A mmbd110 20 GHz schottky diode

    diode 349A

    Abstract: 20 GHz schottky diode nf amplifier low voltage UHF schottky diode
    Text: MMDL101T1 Schottky Barrier Diode Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Very Low Capacitance — Less than 1.0 pF @ Zero Volts


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    PDF MMDL101T1 diode 349A 20 GHz schottky diode nf amplifier low voltage UHF schottky diode

    5M MARKING CODE SCHOTTKY DIODE

    Abstract: Diode marking CODE 5M SOD onsemi 035 Schottky diode "Noise Source" MMBD110T1 MMDL101T1 MMDL101T1G
    Text: MMDL101T1 Schottky Barrier Diode Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Features http://onsemi.com • Very Low Capacitance − Less than 1.0 pF @ 0 V


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    PDF MMDL101T1 MMDL101T1/D 5M MARKING CODE SCHOTTKY DIODE Diode marking CODE 5M SOD onsemi 035 Schottky diode "Noise Source" MMBD110T1 MMDL101T1 MMDL101T1G

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes MMBD101LT1 Designed primarily for UHF mixer applications but suitable also for use in detector and ultra-fast switching circuits.Supplied in an inexpensive plastic package for low-cost,high-volume consumer requirements.Also available in Surface Mount package.


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    PDF MMBD101LT1 236AB) MBD101

    2.2 GHz local oscillator

    Abstract: power Schottky bridge MBD101 MMBD101L MMBD101LT1 diode 349A G15-2
    Text: LESHAN RADIO COMPANY, LTD. Schottky Barrier Diodes MMBD101LT1 Designed primarily for UHF mixer applications but suitable also for use in detector and ultra-fast switching circuits.Supplied in an inexpensive plastic package for low-cost,high-volume consumer requirements.Also


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    PDF MMBD101LT1 236AB) MBD101 2.2 GHz local oscillator power Schottky bridge MBD101 MMBD101L MMBD101LT1 diode 349A G15-2

    MBD101

    Abstract: MBD101 equivalent
    Text: ON Semiconductort MBD101 MMBD101LT1 Schottky Barrier Diodes Designed primarily for UHF mixer applications but suitable also for use in detector and ultra–fast switching circuits. Supplied in an inexpensive plastic package for low–cost, high–volume consumer


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    PDF MBD101 MMBD101LT1 MMBD101LT1 MBD101 equivalent

    46 sot363

    Abstract: No abstract text available
    Text: ON Semiconductort MBD110DWT1 MBD330DWT1 MBD770DWT1 Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT–363 package is a solution which simplifies circuit design, reduces device count, and


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    PDF MBD110DWT1 MBD330DWT1 MBD770DWT1 MBD770DWT1 46 sot363

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMVL101T1/D SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diodes MMVL101T1 Designed primarily for UHF mixer applications but suitable also for use in detector and ultra–fast switching circuits. Supplied in an inexpensive plastic package for


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    PDF MMVL101T1/D MMVL101T1 MMVL101T1/D

    MBD101

    Abstract: MBD101 equivalent MBD101G MMBD101LT1 MMBD101LT1G
    Text: MBD101, MMBD101LT1 Preferred Device Schottky Barrier Diodes Designed primarily for UHF mixer applications but suitable also for use in detector and ultra−fast switching circuits. Supplied in an inexpensive plastic package for low−cost, high−volume consumer


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    PDF MBD101, MMBD101LT1 MBD101 MMBD101LT1d MBD101/D MBD101 MBD101 equivalent MBD101G MMBD101LT1 MMBD101LT1G

    Untitled

    Abstract: No abstract text available
    Text: MBD101, MMBD101LT1 Preferred Device Schottky Barrier Diodes Designed primarily for UHF mixer applications but suitable also for use in detector and ultra−fast switching circuits. Supplied in an inexpensive plastic package for low−cost, high−volume consumer


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    PDF MBD101, MMBD101LT1 MBD101 MMBD101Lale MBD101/D

    MBD101

    Abstract: MBD101G MMBD101LT1 MMBD101LT1G
    Text: MBD101, MMBD101LT1 Preferred Device Schottky Barrier Diodes Designed primarily for UHF mixer applications but suitable also for use in detector and ultra−fast switching circuits. Supplied in an inexpensive plastic package for low−cost, high−volume consumer


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    PDF MBD101, MMBD101LT1 MBD101 MBD101/D MBD101 MBD101G MMBD101LT1 MMBD101LT1G

    sot-363 702

    Abstract: MARKING 46 SOT-363 SOT 363 marking m4 46 sot363 marking 702 sot363
    Text: ON Semiconductort MBD110DWT1 MBD330DWT1 MBD770DWT1 Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and


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    PDF OT-363 OT-23 MBD110DWT1 MBD330DWT1 MBD770DWT1 419B-01, OT-363 sot-363 702 MARKING 46 SOT-363 SOT 363 marking m4 46 sot363 marking 702 sot363

    Untitled

    Abstract: No abstract text available
    Text: MBD110DWT1G, MBD330DWT1G Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and reduces


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    PDF MBD110DWT1G, MBD330DWT1G MBD110DWT1/D

    marking 12 SOT-363 amplifier

    Abstract: marking code 04 sot-363 SOT 363 marking code 06 low noise SOT 363 marking CODE T4
    Text: MBD110DWT1G, MBD330DWT1G Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and reduces


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    PDF MBD110DWT1G, MBD330DWT1G OT-363 OT-23 SC-88 marking 12 SOT-363 amplifier marking code 04 sot-363 SOT 363 marking code 06 low noise SOT 363 marking CODE T4

    Untitled

    Abstract: No abstract text available
    Text: MBD110DWT1G, MBD330DWT1G, MBD770DWT1G Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and reduces


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    PDF MBD110DWT1G, MBD330DWT1G, MBD770DWT1G MBD110DWT1/D

    MBD110DW

    Abstract: MBD110DWT1 MBD330DW MBD330DWT1 MBD770DW MBD770DWT1 MMBD101LT1 MMBD301LT1 MMBD701LT1 marking code 04 sot-363
    Text: MBD110DWT1, MBD330DWT1, MBD770DWT1 Preferred Device Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and


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    PDF MBD110DWT1, MBD330DWT1, MBD770DWT1 OT-363 OT-363 OT-23 MBD110DWT1/D MBD110DW MBD110DWT1 MBD330DW MBD330DWT1 MBD770DW MBD770DWT1 MMBD101LT1 MMBD301LT1 MMBD701LT1 marking code 04 sot-363

    MT1115

    Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
    Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir


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    PDF 108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117

    3498H-64

    Abstract: 3494H-64 3494-80 3496H-64 3491H-64 3492H-64 3493-64 3494-64 3498-64 349h
    Text: Series 349 and 349H Octave-Band 11 Bit Digital PIN Diode Attenuators T h e S e rie s 3 4 9 and 34 9 H p ro g ra m m a b le a tte n u a to rs p ro v id e g re a te r th a n o c ta ve -b a n d p e rfo rm a n c e a n d w id e p ro g ra m m in g fle x ib ility in


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