Diode smd code 9a
Abstract: diode MARKING CODE 18A D09E60 IDP09E60 IEC61249-2-21
Text: IDP09E60 Fast Switching Diode Product Summary Features VRRM • 600 V diode technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant
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IDP09E60
PG-TO220-2
IEC61249-2-21
D09E60
Diode smd code 9a
diode MARKING CODE 18A
D09E60
IDP09E60
IEC61249-2-21
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fast recovery diode 400v 5A
Abstract: IDD09E60
Text: IDD09E60 Preliminary data Fast Switching EmConDiode Product Summary Feature 600 V IF 9 A VF 1.45 V Tjmax 175 °C VRRM 600 V EmCon technology Fast recovery Soft switching Low reverse recovery charge P-TO252-3-1. Low forward voltage 175°C operating temperature
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IDD09E60
P-TO252-3-1.
Q67040-S4379
D09E60
fast recovery diode 400v 5A
IDD09E60
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D09E60
Abstract: IDB09E60 IDP09E60 PG-TO263-3-2 9A MARKING diode 343 18a
Text: IDB09E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C PG-TO263-3-2 • Low forward voltage • 175°C operating temperature
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IDB09E60
PG-TO263-3-2
D09E60
D09E60
IDB09E60
IDP09E60
PG-TO263-3-2
9A MARKING
diode 343 18a
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D09E60
Abstract: IDD09E60 A5016
Text: IDD09E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C • Low forward voltage • 175°C operating temperature • Easy paralleling
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IDD09E60
PG-TO252-3-1
D09E60
D09E60
IDD09E60
A5016
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Untitled
Abstract: No abstract text available
Text: IDB09E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage • 175°C operating temperature
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IDB09E60
P-TO220-3
IDB09E60
D09E60
Q67040-S4482
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A2118
Abstract: No abstract text available
Text: IDP09E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C PG-TO220-2-2. • Low forward voltage C • 175°C operating temperature
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IDP09E60
PG-TO220-2-2.
D09E60
A2118
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D09E60
Abstract: No abstract text available
Text: IDD09E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C • Low forward voltage • 175°C operating temperature • Easy paralleling
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IDD09E60
IDD09E60
PG-TO252-3-1
Q67040-S4379
D09E60
D09E60
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Untitled
Abstract: No abstract text available
Text: IDP09E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C PG-TO220-2-2. • Low forward voltage • 175°C operating temperature
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IDP09E60
PG-TO220-2-2.
Q67040-S4483
D09E60
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d09e60
Abstract: No abstract text available
Text: IDD09E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C • Low forward voltage • 175°C operating temperature • Easy paralleling
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IDD09E60
IDD09E60
PG-TO252-3-1
D09E60
d09e60
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IDD09E60
Abstract: D09E60 J-STD-020A P-TO252
Text: IDD09E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C • Low forward voltage • 175°C operating temperature • Easy paralleling
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IDD09E60
P-TO252-3-1
Q67040-S4379
D09E60
IDD09E60
D09E60
J-STD-020A
P-TO252
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Untitled
Abstract: No abstract text available
Text: IDB09E60 Fast Switching EmCon Emitter Diode Controlled Diode Product Summary Feature VRRM • 600 EmConControlled technologytechnology 600VV Emitter • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C PG-TO263-3-2
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IDB09E60
PG-TO263-3-2
D09E60
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GA100TS120UPBF
Abstract: No abstract text available
Text: Preliminary Data Sheet I27243 12/06 GA100TS120UPbF "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
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I27243
GA100TS120UPbF
GA100TS120UPBF
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d09e60
Abstract: IDB09E60 IDP09E60 Q67040-S4482 Q67040-S4483
Text: IDP09E60 IDB09E60 Preliminary data Fast Switching EmConDiode Product Summary VRRM 600 Feature 600 V EmCon technology Fast recovery Soft switching Low reverse recovery charge IF 9 A VF 1.45 V T jmax 175 °C P-TO220-3.SMD Low forward voltage V
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IDP09E60
IDB09E60
P-TO220-3
P-TO220-2-2.
Q67040-S4483
D09E60
d09e60
IDB09E60
IDP09E60
Q67040-S4482
Q67040-S4483
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Untitled
Abstract: No abstract text available
Text: IDD09E60 Fast Switching Emitter Controlled Diode Product Summary Feature VRRM • 600V Emitter Controlled technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C • Low forward voltage • 175°C operating temperature
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IDD09E60
PG-TO252-3-1
D09E60
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Untitled
Abstract: No abstract text available
Text: IDB09E60 Fast Switching EmCon Emitter Diode Controlled Diode Product Summary VRRM Feature 600VV Emitter • 600 EmConControlled technologytechnology 600 V IF 9 A VF 1.5 V T jmax 175 °C • Fast recovery • Soft switching 2 • Low reverse recovery charge
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IDB09E60
PG-TO263-3
D09E60
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Untitled
Abstract: No abstract text available
Text: IDD09E60 Fast Switching Emitter Controlled Diode Product Summary VRRM Feature 600 V IF 9 A VF 1.5 V T jmax 175 °C • 600V Emitter Controlled technology • Fast recovery • Soft switching • Low reverse recovery charge PG-TO252-3 • Low forward voltage
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IDD09E60
PG-TO252-3
D09E60
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GA100TS120U
Abstract: No abstract text available
Text: PD - 5.060A PRELIMINARY GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses
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GA100TS120U
GA100TS120U
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VN64GA
Abstract: 1rf820 irf150 IRF340 IRF742 diode 343 18a IRF740 IRF823 SILICONIX IRF740 IRF440
Text: Ü Ü A C D ^ U / C D M i v i a Dr/\Wi iv iv ^ i v T T k iv r i i i i i v t i v u v iw i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: u BVqss Volts 450-500 TO-3 TO-220 Siliconix
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OCR Scan
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O-220
O-237
O-202
IRF450
IRF840
IRF440
VN5001D/IRF830
VNP002A*
IRF820
VN5001A/IRF430
VN64GA
1rf820
irf150
IRF340
IRF742
diode 343 18a
IRF740
IRF823
SILICONIX IRF740
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irf740 equivalent
Abstract: irf340 "cross reference" IRF450 equivalent 2SK259 irf150 2SK134 equivalent 2sk135 equivalent IRF240 IRF351 2SK132
Text: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPWR-6501 HPWR-6502 HPWR-6503 HPWR-6504 BV d s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 TO-3 TO -3 TO-3 TO-3 100 120 140 160 180 200 160
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PWR-6501
IRF441
HPWR-6502
IRF340
HPWR-6503
HPWR-6504
VN4001A
2SK132
IRF122
irf740 equivalent
irf340 "cross reference"
IRF450 equivalent
2SK259
irf150
2SK134 equivalent
2sk135 equivalent
IRF240
IRF351
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Untitled
Abstract: No abstract text available
Text: International IO R Rectifier PD - 5.060 PRELIMINARY G A 100T S 1 2 0 U Ultra-Fast Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK Features V q e s — 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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Untitled
Abstract: No abstract text available
Text: International IQ R Rectifier PD - 5.060A GA100TS120U PRELIMINARY Ultra-Fast Speed IGBT "HALF-BRIDGE” IGBT INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
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PDF
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GA100TS120U
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Untitled
Abstract: No abstract text available
Text: International I R Recti fi G f PD - 5.060A PR E LIM IN A R Y GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-Fast Speed IGBT Features V c e s = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz In hard switching, >200
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GA100TS120U
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Untitled
Abstract: No abstract text available
Text: PD - 91723 International I R Rectifier IRG4ZC71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, ts c =10ns, V c c = 3 6 0 V , T j = 125°C,
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IRG4ZC71KD
SMD-10
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Untitled
Abstract: No abstract text available
Text: PD 9.1469A International ICR Rectifier IRG4PC50FD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode .
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IRG4PC50FD
O-247AC
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