DIODE A46
Abstract: A47 diode skkh570 4092 thyristor skkt 90 A76A semipack skkh 106 SKKD380 A36 diode semipack skkt 330
Text: 1996-2012:QuarkCatalogTempNew 9/20/12 3:44 PM Page 1996 INTERCONNECT TEST & MEASUREMENT 25 SEMIPACK Isolated Diode/Diode and Thyristor/Diode Modules SEMIPACK® Isolated Diode/Diode and Single Diode Modules 27 Amp to 700 Amp RoHS SKKD 46/16 Stock No. Mfr.’s
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pn junction diode structure
Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
Text: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss
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diode 5082-3042
Abstract: 5082-3042
Text: 5082-3042 FAST SWITCHING PIN DIODE DESCRIPTION: The ASI 5082-3042 is a Switching Diode Designed for low power Applications such as RF duplexers, antenna switching matrices, and time multiplex filters. PACKAGE STYLE 01A FEATURES INCLUDE: • Low series resistance
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MIE-304G1
Abstract: 840 nm GaAs
Text: GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE Description MIE-304G1 Package Dimensions The MIE-304G1 is an infrared emitting diode in GaAs Unit : mm inches technology molded in water clear plastic package. ψ3.00 (.118) 5.25 (.207) 1.00 (.040) 4.00
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MIE-304G1
MIE-304G1
40MIN.
00MIN.
840 nm GaAs
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MIE-304L3
Abstract: No abstract text available
Text: GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE MIE-304L3 Description Package Dimensions The MIE-304L3 is an infrared emitting diode in Unit : mm inches GaAlAs on GaAlAs technology molded in water clear ψ3.00 (.118) plastic package. 5.25 (.207) SEE NOTE 2 1.00
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MIE-304L3
MIE-304L3
40MIN.
00MIN.
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MIE-304A2
Abstract: opto 921 high power infrared led
Text: AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE Description MIE-304A2 Package Dimensions The MIE-304A2 is a high power infrared eimtting Unit: mm inches diode in GaAs technology with AlGaAs window 3.00 (.118) coating molded in water clear plastic package.
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MIE-304A2
MIE-304A2
40MIN.
opto 921
high power infrared led
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high power infrared led
Abstract: MIE-304A4 Unity Opto Technology
Text: AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE Description MIE-304A4 Package Dimensions The MIE-304A4 is a high power infrared eimtting Unit: mm inches diode in GaAs technology with AlGaAs window 3.00 (.118) coating molded in water clear plastic package.
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MIE-304A4
MIE-304A4
40MIN.
high power infrared led
Unity Opto Technology
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20 GHz PIN diode
Abstract: hp pin diode 10 GHz pin diode 3041 "Direct Replacement" hp 5082 7650 pin diode microstrip 6 GHz PIN diode
Text: 5082-3041 MICROSTRIP/STRIPLINE PIN DIODE SWITCH DESCRIPTION: PACKAGE STYLE M-50 The 5082-3041 is a Silicon PIN Diode Module Designed for Reflective Attenuator and Switching Applications from 1 GHz to 18 GHz. FEATURES INCLUDE: • Direct Replacement for HP 5082-3041
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ASI30253
20 GHz PIN diode
hp pin diode
10 GHz pin diode
3041
"Direct Replacement"
hp 5082 7650
pin diode microstrip
6 GHz PIN diode
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Untitled
Abstract: No abstract text available
Text: 5082-3040 MICROSTRIP/STRIPLINE PIN DIODE SWITCH DESCRIPTION: PACKAGE STYLE M-50 The ASI 5082-3040 is a Silicon PIN Diode Module Designed for Reflective Attenuator and Switching Applications from 1 GHz to 18 GHz. FEATURES INCLUDE: • Direct Replacement for HP 5082-3040
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ASI30415
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11029 diode
Abstract: 3041N
Text: Datenblatt / Data sheet N Netz-Gleichrichterdiode Rectifier Diode Zieldaten D 3041N Maßbild 1: Anode/Anode 1 2 2: Kathode/Cathode Seite/page 3/7 Datenblatt / Data sheet N Netz-Gleichrichterdiode Rectifier Diode R,t – Werte R R,T-Werte beidseitig two-sided
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3041N
11029 diode
3041N
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5082-3040
Abstract: 10 GHz pin diode 20 GHz PIN diode 5082-3040 equivalent asi304
Text: 5082-3040 MICROSTRIP/STRIPLINE PIN DIODE SWITCH DESCRIPTION: PACKAGE STYLE M-50 The ASI 5082-3040 is a Silicon PIN Diode Module Designed for Reflective Attenuator and Switching Applications from 1 GHz to 18 GHz. FEATURES INCLUDE: • Direct Replacement for HP 5082-3040
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ASI30415
5082-3040
10 GHz pin diode
20 GHz PIN diode
5082-3040 equivalent
asi304
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diode 30a 400v
Abstract: 12V 30A diode 1085 CT 600v 30a IGBT C-150 IRGP30B60KD-E
Text: PD - 94388B IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.
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94388B
IRGP30B60KD-E
O-247AD
O-247AD
diode 30a 400v
12V 30A diode
1085 CT
600v 30a IGBT
C-150
IRGP30B60KD-E
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IRGP30B60
Abstract: C-150 IRGP30B60KD-E
Text: PD - 94388A IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.
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4388A
IRGP30B60KD-E
O-247AD
O-247AD
IRGP30B60
C-150
IRGP30B60KD-E
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Untitled
Abstract: No abstract text available
Text: PD - 94388 IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.
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IRGP30B60KD-E
O-247AD
O-247AD
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12V 30A diode
Abstract: swiching 30A current source IRGP30B60KD-EP 035H C-150 IRFPE30
Text: PD - 95120 IRGP30B60KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.
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IRGP30B60KD-EP
O-247AD
O-247AD
O-247AC
IRFPE30
12V 30A diode
swiching 30A current source
IRGP30B60KD-EP
035H
C-150
IRFPE30
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Untitled
Abstract: No abstract text available
Text: PD - 94388B IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.
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94388B
IRGP30B60KD-E
O-247AD
O-247AD
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C-150
Abstract: IRGP30B60KD-EP
Text: PD - 95120A IRGP30B60KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.
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5120A
IRGP30B60KD-EP
O-247AD
O-247AD
C-150
IRGP30B60KD-EP
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Untitled
Abstract: No abstract text available
Text: PD - 95120A IRGP30B60KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.
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5120A
IRGP30B60KD-EP
O-247AD
O-247AD
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zener diodes color coded
Abstract: VS-2511 GB 2510 vectron st VS-25XX voltage regulator pa66 viscosity
Text: VS-2511 Solid-State Viscosity Sensor & VB-2510 Shunt-Diode Barrier Operating Instructions Operating Instructions for the VS-2511 Solid-State Viscosity Sensor & VB-2510 Shunt-Diode Barrier 0359 Examination Certificate Number TÜV 12 ATEX 091790 X Group, Category, Type of Protections, Shunt-Diode Barrier type VB-2510:
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VS-2511
VB-2510
VB-2510:
VS-2511:
ITS12ATEXQ7518
HDOC200005,
zener diodes color coded
GB 2510
vectron st
VS-25XX
voltage regulator pa66
viscosity
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diode cross reference
Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Text: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE
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MA40401
MA40402
MA40404
MA40405
MA40406
MA40408
diode cross reference
schottky diode cross reference
MV3110
AH513
AH761
AH512
impatt diode
Gunn Diode
AH370
DMK-6606
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XR 798 diode
Abstract: R0204
Text: SLU304XR SONY 800/700mW High Power Laser Diode with a Detachable Fiber Description SLU304XR is a high power laser diode based on the SLD 304XT w ith a detachable fiber. Direct coupling to a fib e r having an FC connector is possible w ith o u t any optical
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SLU304XR
800/700mW
SLU304XR
304XT
XR 798 diode
R0204
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Untitled
Abstract: No abstract text available
Text: mn GaAs LIGHT-EMITTING DIODE “PIGTAIL’ 62017 TYPE GS 3040 OPTOELECTRONIC PRODUCTS DIVISION * HIGH INTENSITY GaAIAs VERSION AVAILABLE MINIATURE HIGH EFFICIENCY LED WITH NARROW BEAM ANGLE GLASS/METAL WELDED PACKAGE Mii 62071 is a P-N GaAs Infrared Light Emitting Diode in a lensed coaxial package designed to be
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MIL-S-19500.
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Untitled
Abstract: No abstract text available
Text: O rdering num ber : EN 3048B _ SVC363 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Tuning Use F e a tu re s • Excellent matching characteristics because of composite type. • The number of manufacturing processes can be reduced and automatic mounting is possible because of
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3048B
SVC363
SVC363
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EVR20
Abstract: diode 1n4742 Diode DO12 1N47S2 IN4756 IN4748 EVR10 EVR16 EVR30 in4758
Text: 3869720 GENERAL DIODE C O R P _ GENERAL DIODE CORP 86D 00351 D 7"— / 3 flb _ DE Bflb'íTSO 0DG0351 b 1 WATT SILICON ZENER DIODES . . . cont’d TYPE TYPE 1N3041 1N 3042 1N3043 1N3044 1N304S 00-12 Do-12 Do-12 Do-12 Do-12 75 82 91 100 110
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DDD351
1N3041
1N3042
Do-12
1N3043
1N3044
1N304S
1N3046
EVR20
diode 1n4742
Diode DO12
1N47S2
IN4756
IN4748
EVR10
EVR16
EVR30
in4758
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