Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE 30 YF Search Results

    DIODE 30 YF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 30 YF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FS30AS-06 High-Speed Switching Use Nch Power MOS FET REJ03G1410-0200 Previous: MEJ02G0089-0101 Rev.2.00 Aug 07, 2006 Features • • • • • Drive voltage : 10 V VDSS : 60 V rDS(ON) (max) : 30 mΩ ID : 30 A Integrated Fast Recovery Diode (TYP.) : 65 ns


    Original     		FS30AS-06 REJ03G1410-0200 MEJ02G0089-0101) PRSS0004ZA-A PDF

    FS30AS-06

    Abstract: FS30AS-06-T13 PRSS0004ZA-A
    Text: FS30AS-06 High-Speed Switching Use Nch Power MOS FET REJ03G1410-0200 Previous: MEJ02G0089-0101 Rev.2.00 Aug 07, 2006 Features • • • • • Drive voltage : 10 V VDSS : 60 V rDS(ON) (max) : 30 mΩ ID : 30 A Integrated Fast Recovery Diode (TYP.) : 65 ns


    Original     		FS30AS-06 REJ03G1410-0200 MEJ02G0089-0101) PRSS0004ZA-A FS30AS-06 FS30AS-06-T13 PRSS0004ZA-A PDF

    FX30KMJ-03

    Abstract: FX30KMJ-03-A8
    Text: FX30KMJ-03 High-Speed Switching Use Pch Power MOS FET REJ03G0260-0100 Rev.1.00 Aug.20.2004 Features • • • • • Drive voltage : 4 V VDSS : – 30 V rDS ON (max) : 61 mΩ ID : – 30 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns


    Original     		FX30KMJ-03 REJ03G0260-0100 O-220FN FX30KMJ-03 FX30KMJ-03-A8 PDF

    FX30KMJ-03

    Abstract: FX30KMJ-03-A8
    Text: FX30KMJ-03 High-Speed Switching Use Pch Power MOS FET REJ03G0260-0100 Rev.1.00 Aug.20.2004 Features • • • • • Drive voltage : 4 V VDSS : – 30 V rDS ON (max) : 61 mΩ ID : – 30 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns


    Original     		FX30KMJ-03 REJ03G0260-0100 O-220FN FX30KMJ-03 FX30KMJ-03-A8 PDF

    Untitled

    Abstract: No abstract text available
    Text: FS30AS-06 High-Speed Switching Use Nch Power MOS FET REJ03G1410-0300 Rev.3.00 Dec 19, 2008 Features • • • • • Drive voltage : 10 V VDSS : 60 V rDS ON (max) : 30 mΩ ID : 30 A Integrated Fast Recovery Diode (TYP.) : 65 ns Outline RENESAS Package code: PRSS0004ZG-A


    Original     		FS30AS-06 REJ03G1410-0300 PRSS0004ZG-A PDF

    HUW992406401A

    Abstract: HUW992406401B HUW9924064-01B SLT1130 SLT1136
    Text: Sumitomo Electric Industries, Ltd. Part No.: Document No.: Date of issue: Technical Specification of 1.3µm MQW-FP Laser Diode: SLT1130 Series Page 1 of 7 SLT1130 Series HUW9924064-01B September 30, 2003 Sumitomo Electric Industries, Ltd. Part No.: Document No.:


    Original     		SLT1130 HUW9924064-01B HUW992406401A HUW992406401B HUW992406401A HUW992406401B HUW9924064-01B SLT1136 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03N9DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0790EJ0101 Power Switching Rev.1.01 May 30, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK03N9DNS R07DS0790EJ0101 PWSN0008JB-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03N2DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0783EJ0110 Power Switching Rev.1.10 May 30, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK03N2DPA R07DS0783EJ0110 PWSN0008DC-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03L3DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0780EJ0110 Power Switching Rev.1.10 May 30, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK03L3DNS R07DS0780EJ0110 PWSN0008JB-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03N5DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0786EJ0120 Power Switching Rev.1.20 May 30, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK03N5DPA R07DS0786EJ0120 PWSN0008DC-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03N2DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0783EJ0110 Power Switching Rev.1.10 May 30, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK03N2DPA R07DS0783EJ0110 PWSN0008DC-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03N0DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0781EJ0110 Power Switching Rev.1.10 May 30, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK03N0DPA R07DS0781EJ0110 PWSN0008DC-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03L2DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0779EJ0110 Power Switching Rev.1.10 May 30, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK03L2DNS R07DS0779EJ0110 PWSN0008JB-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03N5DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0786EJ0120 Power Switching Rev.1.20 May 30, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK03N5DPA R07DS0786EJ0120 PWSN0008DC-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03N1DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0782EJ0120 Power Switching Rev.1.20 May 30, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK03N1DPA R07DS0782EJ0120 PWSN0008DC-B PDF

    Diode BAY 61

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03N3DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0784EJ0101 Power Switching Rev.1.01 May 30, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK03N3DPA R07DS0784EJ0101 PWSN0008DC-B Diode BAY 61 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03N0DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0781EJ0110 Power Switching Rev.1.10 May 30, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK03N0DPA R07DS0781EJ0110 PWSN0008DC-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03N6DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0787EJ0101 Power Switching Rev.1.01 May 30, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK03N6DPA R07DS0787EJ0101 PWSN0008DC-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03N4DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0785EJ0110 Power Switching Rev.1.10 May 30, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK03N4DPA R07DS0785EJ0110 PWSN0008DC-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03N1DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0782EJ0120 Power Switching Rev.1.20 May 30, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK03N1DPA R07DS0782EJ0120 PWSN0008DC-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03N4DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0785EJ0110 Power Switching Rev.1.10 May 30, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK03N4DPA R07DS0785EJ0110 PWSN0008DC-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03N3DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0784EJ0101 Power Switching Rev.1.01 May 30, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK03N3DPA R07DS0784EJ0101 PWSN0008DC-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03L2DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0779EJ0110 Power Switching Rev.1.10 May 30, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK03L2DNS R07DS0779EJ0110 PWSN0008JB-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03N6DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0787EJ0101 Power Switching Rev.1.01 May 30, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK03N6DPA R07DS0787EJ0101 PWSN0008DC-B PDF