marking 2U diode
Abstract: marking 2U 02 diode glass diode marking 2U
Text: Doc No. TT4-EA-11538 Revision. 4 Product Standards Zener Diode DZ2J0270L DZ2J0270L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5 Excellent rising characteristics of zener current Iz
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TT4-EA-11538
DZ2J027ï
UL-94
marking 2U diode
marking 2U 02 diode
glass diode marking 2U
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-11771 Revision. 3 Product Standards Zener Diode DZ2S0270L DZ2S0270L Silicon epitaxial planar type Unit: mm For constant voltage / For surge absorption circuit DZ2J027 in SSMini2 type package 0.8 0.13 2 • Features 1.2 1.6 Excellent rising characteristics of zener current Iz
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TT4-EA-11771
DZ2S027ï
DZ2J027
UL-94
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KSH200
Abstract: BUD620 BUD87 MMBT6427 MMBTA13 MMBTA14 MMBTA63 MMBTA64 TD13002 TD13003
Text: Surface Mount Darlington Transistors hFE Part No., Marking Code and Polarity VCEO NPN MMBT6427 TMPT6427 MMBTA13 MMBTA14 - IC MMBTA63 MMBTA64 V (A) 40 40 30 30 30 30 0.5 0.5 0.3 0.3 0.5 0.5 2U 2V V C E(sat) & V B E(sat) @ I C & IB fT @ VCE & IC Package PNP
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MMBTA63
MMBTA64
MMBT6427
TMPT6427
MMBTA13
MMBTA14
MMBT3640
KSH200
BUD620
BUD87
MMBT6427
MMBTA13
MMBTA14
MMBTA63
MMBTA64
TD13002
TD13003
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DTC123J
Abstract: EML20 RB521S-30
Text: EML20 Transistors General purpose transistor isolated transistor and diode EML20 DTC123J A and RB521S-30 are housed independently in a EMT6 package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver EMT6 1.6 0.5 1.0 0.5 0.5 (6) (5) (4)
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EML20
DTC123J
RB521S-30
EML20
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1000w buck boost converter
Abstract: No abstract text available
Text: 2015 Product Catalog Advancing The Power Curve Headquartered in Boxborough, Massachusetts, at the location of its manufacturing operations, SynQor is a privately owned U.S. AS9100 and ISO9001 company. SynQor’s converters feature a patented two-stage power topology that greatly
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AS9100
ISO9001
MFG-91
1000w buck boost converter
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600V 25A Ultrafast Diode
Abstract: GE power diode IC OZ 9936 in 4436 Ir 900v 60a ir igbt 1200V 40A 035H IRGP30B120KD-E PW80 irgp30b120
Text: PD- 93818A IRGP30B120KD-E Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 s Short Circuit Capability
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3818A
IRGP30B120KD-E
O-247AD
600V 25A Ultrafast Diode
GE power diode
IC OZ 9936
in 4436
Ir 900v 60a
ir igbt 1200V 40A
035H
IRGP30B120KD-E
PW80
irgp30b120
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ATX POWER SUPPLY 600W circuit diagram
Abstract: S5000XALR d33025* manual intel 965 motherboard circuit diagram HDR4P J4f1 Intel Error Code 8110 S5000XAL 114101 S5000PAL
Text: Intel Server Board S5000PAL / S5000XAL Technical Product Specification Intel order number: D31979-010 Revision 1.9 March 2009 Enterprise Platforms and Services Division – Marketing ii Revision 1.9 Intel order number: D31979-010 Intel® Server Board S5000PAL / S5000XAL TPS
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S5000PAL
S5000XAL
D31979-010
S5000XAL
S5000
5000P
ATX POWER SUPPLY 600W circuit diagram
S5000XALR
d33025* manual
intel 965 motherboard circuit diagram
HDR4P
J4f1
Intel Error Code 8110
114101
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ATI ES1000 resolution
Abstract: 12085 sensor mouse S5000XALR ATI ES1000 ati es1000 specification atx power supply 650w S5000XAL j1g2 s5000 ipmb header IBM 8213 motherboard
Text: Intel Server Board S5000PAL / S5000XAL Technical Product Specification Intel order number: D31979-010 Revision 1.7 February 2008 Enterprise Platforms and Services Division – Marketing ii Revision 1.7 Intel order number: D31979-010 Intel® Server Board S5000PAL / S5000XAL TPS
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S5000PAL
S5000XAL
D31979-010
S5000XAL
S5000
5000P
ATI ES1000 resolution
12085 sensor mouse
S5000XALR
ATI ES1000
ati es1000 specification
atx power supply 650w
j1g2 s5000
ipmb header
IBM 8213 motherboard
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smd diode marking 2U
Abstract: smd diode marking codes 2U smd diode code marking 2U marking 2U 28 diode DIODE smd marking 2U diode SMD marking code 2u 2U marking code diode smd smd diode marking 2U 40 marking 2U diode smd
Text: PMDPB95XNE 30 V dual N-channel Trench MOSFET 26 September 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB95XNE
DFN2020-6
OT1118)
smd diode marking 2U
smd diode marking codes 2U
smd diode code marking 2U
marking 2U 28 diode
DIODE smd marking 2U
diode SMD marking code 2u
2U marking code diode smd
smd diode marking 2U 40
marking 2U diode smd
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X5460
Abstract: E5450 E5440 e5405 Platform Environment Control Interface PECI Spe E5410 E5420 MOTHERBOARD DIAGRAM X5470 L5410 E5430
Text: Quad-Core Intel Xeon® Processor 5400 Series Datasheet August 2008 318589-005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS
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X5355)
cts/server/processors/q5400/feature/index
17-Feb-2009
X5460
E5450
E5440
e5405
Platform Environment Control Interface PECI Spe
E5410
E5420 MOTHERBOARD DIAGRAM
X5470
L5410
E5430
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Untitled
Abstract: No abstract text available
Text: LM5122/LM5122-Q1 www.ti.com SNVS954C – APRIL 2013 – REVISED MAY 2013 Wide Input Synchronous Boost Controller with Multiple Phase Capability Check for Samples: LM5122/LM5122-Q1 FEATURES APPLICATIONS • • • • • • • • • • • • • •
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LM5122/LM5122-Q1
SNVS954C
AEC-Q100
LM5122-Q1)
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Untitled
Abstract: No abstract text available
Text: LM5122/LM5122-Q1 www.ti.com SNVS954C – APRIL 2013 – REVISED MAY 2013 Wide Input Synchronous Boost Controller with Multiple Phase Capability Check for Samples: LM5122/LM5122-Q1 FEATURES APPLICATIONS • • • • • • • • • • • • • •
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LM5122/LM5122-Q1
SNVS954C
AEC-Q100
LM5122-Q1)
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Untitled
Abstract: No abstract text available
Text: LM5122/LM5122-Q1 www.ti.com SNVS954C – APRIL 2013 – REVISED MAY 2013 Wide Input Synchronous Boost Controller with Multiple Phase Capability Check for Samples: LM5122/LM5122-Q1 FEATURES APPLICATIONS • • • • • • • • • • • • • •
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LM5122/LM5122-Q1
SNVS954C
AEC-Q100
LM5122-Q1)
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60nag
Abstract: No abstract text available
Text: SIPMOS N Channel MOSFET BSP 88 Preliminary Data • SIPMOS - enhancement mode • Drain-source voltage Vfcs = 240V • Continuous drain current I o = 0.29A • Drain-source on-resistance • Total power dissipation flbs on = 8.0Q P0 = 1.5W Type Marking Ordering code for
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Q67000-S070
60nag
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marking 2U diode
Abstract: D1NL20U 1NL20U DIODE MARKING 2U L20U
Text: n - n x ^ -c r— K Super Fast Recovery Diode Axial Diode O U TLIN E D IM E N SIO N S D1NL20U Unit • mm Package I AX057 o 200V 1A hLO rn ±0.1 2 0 MIN •trr3 5 n s -2 0 m in -M - • 5 m m \d " j m «EPM f Marking
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D1NL20U
AX057
J515-5
marking 2U diode
D1NL20U
1NL20U
DIODE MARKING 2U
L20U
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D1NL20U
Abstract: marking 2U diode AX057
Text: Super Fast Recovery Diode Axial Diode OUTLINE Package I AX057 D1NL20U Unit : mm Weight 0.19k Typ ♦1 2 0 0 V 1A <2> i Feature •s v -rx • Low Noise • trr=35ns • tnr=35ns 02.6 *2 o® - w - Main Use • Switching Regulator « 1» ¡ » S M B * 2 tt« 3 -K
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D1NL20U
AX057
50e0-52mm
J533-1
CJ533-1
D1NL20U
marking 2U diode
AX057
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D1NS4 diode
Abstract: AX057 marking aaat ji13t
Text: Schottky Barrier Diode Axial Diode OUTLINE Package I AX057 D1NS4 Unit : mm Weight 0.19k T yp 40 V 1A 2^ i Feature 02.6 • Tj=150°C • P rr sm Rating • Tj=15CfC • P r r s m P K ^ V î/ x (S ü E *2 -M - Main Use • • • • • DC/D c u y j t —?
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15ffC
AX057
50e0-52mm
J533-1
D1NS4 diode
AX057
marking aaat
ji13t
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DIODE marking L12
Abstract: No abstract text available
Text: SL05 SEMTECH Low Capacitance 300 Watt Surface Mount TVS Diode TEL: 805-498-2111 D E SC R IP T IO N The SL series of transient voltage suppressors are designed to protect components which are connected to high speed data and transmission lines from over voltages caused by electrostatic discharge ESD ,
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smd diode schottky code marking 2U
Abstract: smd diode marking 2U smd diode marking codes 2U 2U marking code diode smd smd diode marking A3 sot23 MV smd marking code SOT23 sot143 marking code A3 smd diode code marking 2U marking l4 sot-23 SMD DIODE 2U
Text: SMD SCHOTTKY DIODES DESCRIPTION • Philips Components Schottky barrier diodes are metal junction devices which combine the attributes of low forward voltage drop with fast switching times. Specific applications include battery back-up circuits, overshoot/
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OT-23
OT-143
ODBAT54C
BAT54S
BAT74
PMBD101
PMBD352
PMBD353
PRLL5817
PRLL5818
smd diode schottky code marking 2U
smd diode marking 2U
smd diode marking codes 2U
2U marking code diode smd
smd diode marking A3 sot23
MV smd marking code SOT23
sot143 marking code A3
smd diode code marking 2U
marking l4 sot-23
SMD DIODE 2U
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smd diode pj 72
Abstract: smd Pj 73 smd schottky diode marking 72 smd marking pj smd diode marking JC smd diode smd diode pj pj 72 diode smd Pj 75 pj SMD diode
Text: Schottky Barrier Diode wnnm o u t l i n e Single Diode DE3S6M Unit : nim Package : E-pack Weight 0.326a T yp N 60V 3A Feature • SM D • • SMD P r rsm T K ^ V S /i & S I • » 'J i3 ü * S S 3 S g l T yp«* N o. I '\ ^ ^ 3 • D C /D C • mm. y-A.oAfâgg
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J53Z-1)
smd diode pj 72
smd Pj 73
smd schottky diode marking 72
smd marking pj
smd diode marking JC
smd diode
smd diode pj
pj 72 diode
smd Pj 75
pj SMD diode
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marking 2U 58 diode
Abstract: marking 2U diode t5 marking code KE diode L31 diode sot-23 marking diode KE SOT23 MARKING KE AT-05 MARKING- L31 diode marking code 2U marking L31 SOT23
Text: W Ljm H E W L E T T Bita P A C K A R D Surface Mount Microwave Schottky Detector Diodes Technical Data HSMS-2850 Series HSMS-2860 Series Features • Surface M ount SOT-23/ SOT-143 Package • High Detection Sensitivity: up to 50 mV/ iW at 915 MHz up to 35 mV/nW at 2.45 GHz
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HSMS-2850
HSMS-2860
OT-23/
OT-143
260CC
OT-23
marking 2U 58 diode
marking 2U diode t5
marking code KE diode
L31 diode sot-23
marking diode KE
SOT23 MARKING KE
AT-05
MARKING- L31
diode marking code 2U
marking L31 SOT23
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A7321
Abstract: marking 2U diode diode 2U 88
Text: PD - 9.905A International IQR Rectifier IR L Z 3 4 S /L HEXFET Power MOSFET Advanced Process Technology Surface M ount IRLZ34S Low -profile through-hole (IRLZ34L) 1 75 °C O perating Tem perature Fast Switching Fully Avalanche Rated V dss = 60 V R d s (oh) = 0 .0 5 0 Î2
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IRLZ34S)
IRLZ34L)
A7321
marking 2U diode
diode 2U 88
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Untitled
Abstract: No abstract text available
Text: Who IHEWLETT mUfiM PA CK ARD Small Optical Encoder Modules Technical Data HEDS-973X Series Features • • • • • Small Size Low Cost Multiple M ounting Options Wide R esolution Range Linear and Rotary Options Available • No Signal Adjustment Required
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HEDS-973X
HEDS-970X
HEDS-9730
MIL-F-14256D)
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TC181
Abstract: 80Y80
Text: ¡elUOm Semiconductor, Inc. TC18 Series PFM STEP-UP SWITCHING REGULATORS FEATURES GENERAL DESCRIPTION • The TC18 Series are PFM-control, low operating cur rent, step-up switching regulator ICs. Their unique design keeps the required external components to a minimum.
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OT-89-3
OT-89-5
TC181B50
TC182B50
120llH
26kH7
TC181
80Y80
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