Untitled
Abstract: No abstract text available
Text: 5082-2524 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage Band Test Freq3.0G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)7.0 Maximum Conversion Loss (dB)
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Min100
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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R57-1D.5-5/6
Abstract: R57-1D.5-5/6D R57-5D.25-5/6D R56S-5D.5-6D R56-1D.5-6 R56S-5D.5-6 R57-1D.5-12 R56-1D.5-24 2d524 R57-1D.5-12D
Text: Features ● ● ● ● Standard Industry Packaging 5V DC Versions Operate Directly from DTL or TTL Circuits Internal Clamping Diode Version D-suffix Flame Retardent Epoxy Case is Immersion Resistant R56 & R57 Series General Purpose DIP (dual in-line package) DC Reed Relays
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R56-1D
R57-5D
25-24D
25-5/6D
R57-1D.5-5/6
R57-1D.5-5/6D
R57-5D.25-5/6D
R56S-5D.5-6D
R56-1D.5-6
R56S-5D.5-6
R57-1D.5-12
R56-1D.5-24
2d524
R57-1D.5-12D
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ph 4148 zener diode
Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS
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DN-40
74ABT126
74ABT2240
X3G-BZX84-C7V5
X3G-BZX84-C9V1
ph 4148 zener diode
philips zener diode ph 4148
pcf0700p
Zener Diode ph 4148
PCA1318P
ck2605
pcf0700p/051
philips Pca1318p
on4673
Zener Diode 4148
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LM 1709
Abstract: GA150TD120U DT12-6
Text: PD -5.067 PRELIMINARY GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200 V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses
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GA150TD120U
10kHz
LM 1709
GA150TD120U
DT12-6
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RG2 DIODE
Abstract: GA150TD120U DT12-6
Text: PD - 5.067A PRELIMINARY GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses
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GA150TD120U
10kHz
RG2 DIODE
GA150TD120U
DT12-6
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Untitled
Abstract: No abstract text available
Text: C2500 Series EURO CASSETES 3 0 0 - 4 0 0 W AT T S A C / D C - D C / D C - B AT T E R Y C H A R G E R S S I N G L E O U T P U T FEATURES • • • • • • • DC input 18 V - 380 V AC input 1 or 3-phase, 47 - 400 Hz DC output 5-290V Continuous short circuit protection
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C2500
EN61373
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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SN76670
Abstract: sn76003 SN76660 SN76640 SN7401 SN72747 SN76013 SN76630 SN72820 SN76001
Text: Ordering Instructions and Mechanical Data INTEGRATED CIRCUITS MECHANICAL DATA ORDERING INSTRUCTIONS Electrical characteristics presented in this catalog, unless otherwise noted, apply for circuit type{$ listed in the page heading regardless of package. Except for diode arrays, ECL, and MOS devices, the availability of a circuit function in a
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L2540
L2542
L2541
SN76670
sn76003
SN76660
SN76640
SN7401
SN72747
SN76013
SN76630
SN72820
SN76001
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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CGS74LCT2524
Abstract: CT2524
Text: CGS74LCT2524 EHNational J b f l Semiconductor PRELIMINARY CGS74LCT2524 1 to 4 Minimum Skew 450 ps 3V Clock Driver General Description Features This minimum skew clock driver is a 3V option of the current '2524 Minimum Skew Clock Driver and is designed for
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CGS74LCT2524
CGS74LCT2524
CT2524
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2524
Abstract: CT2524
Text: 2524 ¡2 3 N a tio n a l mm Semiconductor CGS74CT2524 1 to 4 Minimum Skew 450 ps Clock Driver General Description Features These minimum skew clock drivers are designed for Clock Generation and Support (CGS) applications operating at high frequencies. This device guarantees minimum output
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CGS74CT2524
2524
CT2524
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MPS-252409-85 1.7 TO 2.5 GHz SELF-BIASED GaAs FET AMPLIFIER MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES .0 6 0 . 1 52 DkTwwon« tn inches and (mm) INPUT- Li ,130 OIA. P-SO) OUTPUT- i^ _ n • +38 dBm TYPICAL IP3
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MPS-252409-85
MPS-252409-85
RO-3003
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Untitled
Abstract: No abstract text available
Text: TN2524 Supertexinc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ R d S ON ^ G S (th ) I d (ON) b v dgs (max) (max) (min) TO-243AA* Diet 240V 6.0Q. 2.0V 1.0A T N 2524N 8 T N 2524N D * Sam e as SO T-89. P roduct supplied on 2000 piece ca rrie r tape reels,
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TN2524
O-243AA*
2524N
125pF
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RC723DP
Abstract: SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK
Text: VOLTAGE REGULATORS OPERATIONAL AMPLIFIERS 2 INTERFACE CIRCUITS 3 TRANSISTOR ARRAYS OTHER CIRCUITS APPLICATIONS NOTES 5 d u c t S e le c to r G uide INTER FA C E C IR C U ITS Regulating Pulse Width Modulators 13 13 16 21 24 44 1524/2524/3524 1525/2525/3525
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/2525A
/3525A
/2527A
/3527A
523/3523A
RC723DP
SN72748L
MC7805G
LM340H-05
SG3525 equivalent
transistor KT 209 M
78M15HM
SN52107L
SG711
SG7812CK
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TDA2658
Abstract: BB909B VARICAP DIODE IC SOUND 2026 TDA 2038 tda2593 application TDA3791 tda vertical IC tv crt tda3833 TDA4865 philips audio amplifier ic guide
Text: Philips Semiconductors Selection guide Functional index PAGE TUNING/TUNER Tuning SAB6456; SAB6456T Sensitive 1 GHz divide-by-64/divide-by-256 switchable prescaler 1347 SAB8726 Sensitive 2.6 GHz divide-by-2 prescaler 1353 TOA8725T Antenna signal processor 3785
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SAB6456;
SAB6456T
SAB8726
OA8725T
TSA5511
TSA5512
TSA5514
TSA5515T
TSA5520;
TSA5521
TDA2658
BB909B VARICAP DIODE
IC SOUND 2026
TDA 2038
tda2593 application
TDA3791
tda vertical IC tv crt
tda3833
TDA4865
philips audio amplifier ic guide
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tda 2038
Abstract: TDA3791 tda vertical IC tv crt tda 3658 dbx 2151 TDA8302 tda9854 TDA 3030 tda 2790 transistor BF960
Text: Philips Semiconductors Selection guide Alphanumerical index ALPHANUMERICAL INDEX PAGE 80C528; 83C528 CMOS single-chip 8-bit microcontroller; l2C-bus 80C652; 83C652 CMOS single-chip 8-bit microcontroller; l2C-bus 44 50 83C654 CMOS single-chip 8-blt microcontroller; l2C-bus
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80C528;
83C528
80C652;
83C652
83C654
83CE654
84C44X;
84C64X;
84C84X
87C528
tda 2038
TDA3791
tda vertical IC tv crt
tda 3658
dbx 2151
TDA8302
tda9854
TDA 3030
tda 2790
transistor BF960
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Untitled
Abstract: No abstract text available
Text: International I R Rectifier PD -5.067 PRELIMINARY GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features V c e s = 1200V • Generation 4 IG B T technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kH z
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GA150TD120U
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peltier cooler wiring diagram
Abstract: 801-2003-01 Cambion peltier regulator 48V 48V 100W zener diode Cambion 801 118ME mth5n100 Rosemount RTD wiring diagram for a 20v ac to 12v dc transformer
Text: urm TECHNOLOGY Application Note 25 September 1987 Switching Regulators for Poets A Gentle Guide for the Trepidatious Jim Williams The above title is not happenstance and was arrived at after considerable deliberation. As a linear 1C manufac turer, it is our goal to encourage users to design and build
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AN25-23
AN25-24
peltier cooler wiring diagram
801-2003-01
Cambion peltier
regulator 48V
48V 100W zener diode
Cambion 801
118ME
mth5n100
Rosemount RTD
wiring diagram for a 20v ac to 12v dc transformer
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C82 diode
Abstract: C81 diode
Text: International IOR Rectifier PD - 5.067A GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V CES= 1200V • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz
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10kHz
GA150TD120U
150TD
C82 diode
C81 diode
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Untitled
Abstract: No abstract text available
Text: In te r n a tio n a l IQ R R e c tifie r p d p re lim in a ry - s .o bza G A 1 5 0 T D 1 2 0 U "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Fe at ur es V • G en eratio n 4 IG BT te ch n o lo g y • S tan dard : O p tim ize d for m inim um saturation
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10kHz
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Untitled
Abstract: No abstract text available
Text: International I R Recti fi Gf PD - 5.067A PR ELIM IN A R Y GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features V • G e n e ratio n 4 IG B T technology ces = 1200V • S tand ard : O p tim ize d for m inim um saturation v o lta g e and o perating freq u en cies up to 1 0 k H z
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GA150TD120U
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